# Power MOSFET, N Channel, 30 V, 95 A, 0.0043 ohm, TO-252 (DPAK), Surface Mount ![Product image](https://novapart.co/image/farnell:2728024RL/) **URL**: https://novapart.co/products/NTD4805NT4G/power-mosfet-n-channel-30-v-95-a-00043-ohm-to-252 **SKU**: NTD4805NT4G **Manufacturer**: ONSEMI **Category**: Semiconductors - Discretes || FETs || Single MOSFETs **Price**: €0.5420 **Stock**: 10+ ## Specifications | Parameter | Value | |---|---| | Channel Type | N Channel | | Power Dissipation | 79W | | Drain Source On State Resistance | 0.0043ohm | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:2728024RL/) NTD4805N, NVD4805N ## Power MOSFET **30 V, 88 A, Single N−Channel, DPAK/IPAK** ## **Features** - Low R to Minimize Conduction Losses DS(on) - Low Capacitance to Minimize Driver Losses ## **http://onsemi.com** - Optimized Gate Charge to Minimize Switching Losses - NVD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable **==> picture [492 x 515] intentionally omitted <==** **----- Start of picture text -----**
rs V(BR)DSS RDS(on) MAX ID MAX
Unique Site and Control Change Requirements; AEC−Q101 ee ee
Qualified and PPAP Capable 30 V 5.0 m @ 10 V 88 A
• These Devices are Pb−Free and are RoHS Compliant 7.4 m @ 4.5 V
D
Applications
• CPU Power Delivery
• DC−DC Converters
N−Channel
• Low Side Switching G
MAXIMUM RATINGS (TJ = 25 ° C unless otherwise noted) S
ee Parameter Symbol ee Value Unit 4
Drain−to−Source Voltage VDSS 30 V
Gate−to−Source Voltage VGS ± 20 V 4
Continuous Drain TA = 25 ° C ID 17.4 A
————— Current (R JA) (Note 1) TA = 85 ° C 13.5 1 [2] » 1 &
Te 4 3 2 3
Power Dissipation TA = 25 ° C PD 2.65 W DPAK IPAK
a (R JA) (Note 1) ee CASE 369AA CASE 369D
Continuous Drain TA = 25 ° C ee ID ee 12.7 A (Bent Lead) (Straight Lead DPAK)
SEE Current (R JA) (Note 2) Steady TA = 85 ° C 9.8 STYLE 2 STYLE 2
Power Dissipation State TA = 25 ° C PD 1.41 W MARKING DIAGRAMS
a (R JA) (Note 2) ee & PIN ASSIGNMENTS
Continuous Drain TC = 25 ° C ID 95 A 4
a (Note 1)Current (R JC) ee TC = 85 ° C ee ee 73 4 Drain
Power Dissipation TC = 25 ° C PD 79 W Drain
(R JC) (Note 1)
a ee
Pulsed Drain Current tp=10 s TA = 25 ° C IDM 175 A
Current Limited by Package TA = 25 ° C IDmaxPkg 45 A
Eee Operating Junction and Storage Temperature TJ, Tstg −55 to175 ° C | 2 7
po 1 Drain 3 1 2 3
Source Current (Body Diode) IS 55 A Gate Source Gate Drain Source
a
Source Current (Body Diode) Pulsed tp=20 s ISM 175 A A = Assembly Location*
Y = Year
Drain to Source dV/dt dV/dt 6.0 V/ns
WW = Work Week
Single Pulse Drain−to−Source Avalanche EAS 288 mJ 4805N = Device Code
Energy (VDD = 24 V, VGS = 10 V, G = Pb−Free Package
po L = 1.0 mH, IL(pk) = 24 A, RG = 25 )
Lead Temperature for Soldering Purposes | TL 260 ° C * The Assembly Location code (A) is front side
(1/8 ″ from case for 10 s) optional. In cases where the Assembly Location is
ee
stamped in the package, the front side assembly
Stresses exceeding those listed in the Maximum Ratings table may damage the ee ee code may be blank.
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
AYWW 48 05NG
AYWW 48 05NG
**----- End of picture text -----**
## **ORDERING INFORMATION** See detailed ordering and shipping information on page 6 of this data sheet. Publication Order Number: **1** © Semiconductor Components Industries, LLC, 2014 **September, 2014 − Rev. 8** **NTD4805N/D** ## **NTD4805N, NVD4805N** ## **THERMAL RESISTANCE MAXIMUM RATINGS** |**THERMAL RESISTANCE MAXIMUM RATINGS**|||| |---|---|---|---| |**Parameter**|**Symbol**|**Value**|**Unit**| |Junction−to−Case (Drain)|R�JC|1.9|°C/W| |Junction−to−TAB (Drain)|R�JC−TAB|3.5|| |Junction−to−Ambient − Steady State (Note 1)|R�JA|56.6|| |Junction−to−Ambient − SteadyState(Note 2)|R�JA|106.6|| 1. Surface−mounted on FR4 board using 1 in sq pad size, 1 oz Cu. 2. Surface−mounted on FR4 board using the minimum recommended pad size. ## **ELECTRICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise noted) |**ELECTRICAL CHARACTERISTICS **(TJ|= 25°C unless|otherwise noted)|otherwise noted)||||| |---|---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Test Condition**||**Min**|**Typ**|**Max**|**Unit**| |**OFF CHARACTERISTICS**|||||||| |Drain−to−Source Breakdown Voltage|V(BR)DSS|VGS= 0 V, ID= 250�A||30|||V| |Drain−to−Source Breakdown Voltage
Temperature Coefficient|V(BR)DSS/TJ||||27||mV/°C| |Zero Gate Voltage Drain Current|IDSS|VGS= 0 V,
VDS= 24 V|TJ= 25°C|||1.0|�A| ||||TJ= 125°C|||10|| |Gate−to−Source Leakage Current|IGSS|VDS= 0 V, VGS=±20 V||||�100|nA| |**ON CHARACTERISTICS**(Note 3)|||||||| |Gate Threshold Voltage|VGS(TH)|VGS= VDS, ID= 250�A||1.5||2.5|V| |Negative Threshold Temperature Coefficient|VGS(TH)/TJ||||5.86||mV/°C| |Drain−to−Source On Resistance|RDS(on)|VGS= 10 to
11.5 V|ID= 30 A||4.3|5.0|m�| ||||ID= 15 A||4.2||| |||VGS= 4.5 V|ID= 30 A||6.0|7.4|| ||||ID= 15 A||5.8||| |Forward Transconductance|gFS|VDS= 15 V, ID= 15 A|||17||S| |**CHARGES AND CAPACITANCES**|||||||| |Input Capacitance|Ciss|VGS= 0 V, f = 1.0 MHz,
VDS= 12 V|||2865||pF| |Output Capacitance|Coss||||610||| |Reverse Transfer Capacitance|Crss||||338||| |Total Gate Charge|QG(TOT)|VGS= 4.5 V, VDS= 15 V,
ID= 30 A|||20.5|26|nC| |Threshold Gate Charge|QG(TH)||||4.05||| |Gate−to−Source Charge|QGS||||8.28||| |Gate−to−Drain Charge|QGD||||8.36||| |Total Gate Charge|QG(TOT)|VGS= 11.5 V, VDS= 15 V,
ID= 30 A|||48||nC| |**SWITCHING CHARACTERISTICS**(Note 4)|||||||| |Turn−On Delay Time|td(on)|VGS= 4.5 V, VDS= 15 V,
ID= 15 A, RG= 3.0�|||17.2||ns| |Rise Time|tr||||20.3||| |Turn−Off Delay Time|td(off)||||20.8||| |Fall Time|tf||||8.0||| |Turn−On Delay Time|td(on)|VGS= 11.5 V, VDS= 15 V,
ID= 15 A, RG= 3.0�|||10.8||ns| |Rise Time|tr||||20.5||| |Turn−Off Delay Time|td(off)||||30.8||| |Fall Time|tf||||4.4||| **http://onsemi.com** **2** ## **NTD4805N, NVD4805N** ## **ELECTRICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise noted) (continued) |**ELECTRICAL CHARACTERISTICS **(TJ|= 25°C unless|otherwise noted) (continued)|otherwise noted) (continued)||||| |---|---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Test Condition**||**Min**|**Typ**|**Max**|**Unit**| |**DRAIN−SOURCE DIODE CHARACTERISTICS**|||||||| |Forward Diode Voltage|VSD|VGS= 0 V,
IS= 30 A|TJ= 25°C||0.87|1.2|V| ||||TJ= 125°C||0.76||| |Reverse Recovery Time|tRR|VGS= 0 V, dIs/dt = 100 A/�s,
IS= 30 A|||25.7||ns| |Charge Time|ta||||13.1||| |Discharge Time|tb||||12.6||| |Reverse Recovery Time|QRR||||18||nC| |**PACKAGE PARASITIC VALUES**|||||||| |Source Inductance|LS|TA= 25°C|||2.49||nH| |Drain Inductance, DPAK|LD||||0.0164||| |Drain Inductance, IPAK|LD||||1.88||| |Gate Inductance|LG||||3.46||| |Gate Resistance|RG||||0.8||�| Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: Pulse Width ≤ 300 � s, Duty Cycle ≤ 2%. 4. Switching characteristics are independent of operating junction temperatures. **http://onsemi.com** **3** **NTD4805N, NVD4805N** ## **TYPICAL PERFORMANCE CURVES** **==> picture [238 x 174] intentionally omitted <==** **----- Start of picture text -----**
110
10 V 4 V
100 6 V
90 5 V 3.8 V
80 4.5 V
3.6 V
70
60
50 3.4 V
40
30 3.2 V
20
3 V
10
2.8 V
0
0 1 2 3 4 5
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
, DRAIN CURRENT (AMPS)
ID
**----- End of picture text -----**
**Figure 1. On−Region Characteristics** **==> picture [234 x 174] intentionally omitted <==** **----- Start of picture text -----**
180
V DS ≥ 10 V
160
140
120
100
80
60 TJ = 125 ° C
40
TJ = 25 ° C
20
TJ = −55 ° C
0
0 1 2 3 4 5 6
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
, DRAIN CURRENT (AMPS)
ID
**----- End of picture text -----**
**Figure 2. Transfer Characteristics** **==> picture [489 x 436] intentionally omitted <==** **----- Start of picture text -----**
0.045 0.01
0.040 TI D J = 30 A = 25 ° C 0.009 T J = 25 ° C
0.008
0.035
0.007 V GS = 4.5 V
0.030
0.006
0.025
0.005
0.020
0.004 V GS = 11.5 V
0.015
0.003
0.010
0.002
0.005 0.001
0 0
3 4 5 6 7 8 9 10 30 35 40 45 50 55 60 65 70 75 80 85 90
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) ID, DRAIN CURRENT (AMPS)
Figure 3. On−Resistance vs. Gate−to−Source Figure 4. On−Resistance vs. Drain Current and
Voltage Gate Voltage
2.0 100,000
I D = 30 A VGS = 0 V
V GS = 10 V TJ = 175 ° C
10,000
1.5
1000 TJ = 125 ° C
1.0
100
0.5 10
−50 −25 0 25 50 75 100 125 150 175 5 10 15 20 25
TJ, JUNCTION TEMPERATURE ( ° C) VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. On−Resistance Variation with Figure 6. Drain−to−Source Leakage Current
Temperature vs. Drain Voltage
) � ) �
, DRAIN−TO−SOURCE RESISTANCE ( , DRAIN−TO−SOURCE RESISTANCE (
DS(on) DS(on)
R R
, LEAKAGE (nA)
(NORMALIZED) IDSS
, DRAIN−TO−SOURCE RESISTANCE
DS(on)
R
**----- End of picture text -----**
**http://onsemi.com** **4** **NTD4805N, NVD4805N** ## **TYPICAL PERFORMANCE CURVES** **==> picture [486 x 173] intentionally omitted <==** **----- Start of picture text -----**
5000 7
VDS = 0 V VGS = 0 V TJ = 25 ° C
Ciss 6
4000
5
Q T
3000 Ciss 4 Q1 Q2
3
2000 Crss
2
1000 Coss 1 ID = 30 A
VGS = 4.5 V
0 Crss 0 TJ = 25 ° C
10 5 0 5 10 15 20 25 0 5 10 15 20 25
VGS VDS QG, TOTAL GATE CHARGE (nC)
C, CAPACITANCE (pF)
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
**----- End of picture text -----**
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS) **Figure 7. Capacitance Variation** **Figure 8. Gate−To−Source and Drain−To−Source Voltage vs. Total Charge** **==> picture [241 x 387] intentionally omitted <==** **----- Start of picture text -----**
1000
V DD = 15 V
I D = 30 A
VGS = 11.5 V
100
td(off)
tr
10 td(on)
tf
1
1 10 100
RG, GATE RESISTANCE (OHMS)
Figure 9. Resistive Switching Time
Variation vs. Gate Resistance
1000
10 � s
100
100 � s
1 ms
10
VGS = 20 V
SINGLE PULSE 10 ms
TC = 25 ° C dc
1
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.1
0.1 1 10 100
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
t, TIME (ns)
ID, DRAIN CURRENT (AMPS)
**----- End of picture text -----**
**Figure 11. Maximum Rated Forward Biased Safe Operating Area** **==> picture [245 x 387] intentionally omitted <==** **----- Start of picture text -----**
30
VGS = 0 V
25 TJ = 25 ° C
20
15
10
5
0
0.5 0.6 0.7 0.8 0.9 1.0
VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 10. Diode Forward Voltage vs. Current
450
ID = 29 A
400
350
300
250
200
150
100
50
0
25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE ( ° C)
IS, SOURCE CURRENT (AMPS)
AVALANCHE ENERGY (mJ)
EAS, SINGLE PULSE DRAIN−TO−SOURCE
**----- End of picture text -----**
**Figure 12. Maximum Avalanche Energy vs. Starting Junction Temperature** **http://onsemi.com** **5** **NTD4805N, NVD4805N** ## **TYPICAL PERFORMANCE CURVES** **==> picture [479 x 415] intentionally omitted <==** **----- Start of picture text -----**
100
125 ° C 100 ° C 25 ° C
10
1
1 10 100 1000
PULSE WIDTH ( � s)
Figure 13. Avalanche Characteristics
1.0
D = 0.5
0.2
0.1
0.1 0.05 P(pk)
0.02 R � JC(t) = r(t) R � JC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
0.01
SINGLE PULSE t1 READ TIME AT t1
t2 TJ(pk) − TC = P(pk) R � JC(t)
DUTY CYCLE, D = t1/t2
0.01
1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01
t, TIME (s)
ID, DRAIN CURRENT (AMPS)
(NORMALIZED)
r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE
**----- End of picture text -----**
**Figure 14. Thermal Response** ## **ORDERING INFORMATION** |**ORDERING INFORMATION**||| |---|---|---| |**Order Number**|**Package**|**Shipping**†| |NTD4805NT4G|DPAK
(Pb−Free)|2,500 / Tape & Reel| |NTD4805N−1G|IPAK
(Pb−Free)|75 Units / Rail| |NVD4805NT4G*|DPAK
(Pb−Free)|2,500 / Tape & Reel| - †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. - *NVD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable. **http://onsemi.com** **6** **NTD4805N, NVD4805N** ## **PACKAGE DIMENSIONS** **DPAK (SINGLE GUAGE)** CASE 369AA ISSUE B **==> picture [467 x 235] intentionally omitted <==** **----- Start of picture text -----**
NOTES:
C 1. DIMENSIONING AND TOLERANCING PER ASME
A Y14.5M, 1994.
E A 2.3. CONTROLLING DIMENSION: INCHES.THERMAL PAD CONTOUR OPTIONAL WITHIN DI-
MENSIONS b3, L3 and Z.
b3 B c2 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.
L3 4 Z 5. DIMENSIONS D AND E ARE DETERMINED AT THEOUTERMOST EXTREMES OF THE PLASTIC BODY.
1 2 3 D DETAIL A H 6. DATUMS A AND B ARE DETERMINED AT DATUMPLANE H.
INCHES MILLIMETERS
DIM MIN MAX MIN MAX
L4 A 0.086 0.094 2.18 2.38
b2 A1 0.000 0.005 0.00 0.13
b c b 0.025 0.035 0.63 0.89
b2 0.030 0.045 0.76 1.14
e 0.005 (0.13) M C H b3 0.180 0.215 4.57 5.46
c 0.018 0.024 0.46 0.61
L2 [GAUGE] PLANE C SEATINGPLANE c2D 0.0180.235 0.0240.245 0.465.97 0.616.22
E 0.250 0.265 6.35 6.73
e 0.090 BSC 2.29 BSC
H 0.370 0.410 9.40 10.41
L A1 L 0.055 0.070 1.40 1.78
L1 L1 0.108 REF 2.74 REF
L2 0.020 BSC 0.51 BSC
DETAIL A L3 0.035 0.050 0.89 1.27
ROTATED 90 CW � L4 −−− 0.040 −−− 1.01
Z 0.155 −−− 3.93 −−−
**----- End of picture text -----**
**==> picture [220 x 135] intentionally omitted <==** **----- Start of picture text -----**
STYLE 2:
SOLDERING FOOTPRINT* PIN 1. GATE
2. DRAIN
6.20 3.00 3.4. SOURCEDRAIN
0.244 0.118
2.58
0.102
5.80
1.60 6.17
0.228
0.063 0.243
SCALE 3:1
� inches [mm] �
**----- End of picture text -----**
*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. **http://onsemi.com** **7** **NTD4805N, NVD4805N** ## **PACKAGE DIMENSIONS** **IPAK** CASE 369D ISSUE C **==> picture [186 x 172] intentionally omitted <==** **----- Start of picture text -----**
B C
V R E
4
a
A
S
1 2 3
−T−
SEATING
PLANE K
J
F
H
D 3 PL
G 0.13 (0.005) M T
**----- End of picture text -----**
**==> picture [158 x 191] intentionally omitted <==** **----- Start of picture text -----**
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
INCHES MILLIMETERS
Z DIM MIN MAX MIN MAX
A 0.235 0.245 5.97 6.35
B 0.250 0.265 6.35 6.73
C 0.086 0.094 2.19 2.38
D 0.027 0.035 0.69 0.88
E 0.018 0.023 0.46 0.58
F 0.037 0.045 0.94 1.14
G 0.090 BSC 2.29 BSC
H 0.034 0.040 0.87 1.01
J 0.018 0.023 0.46 0.58
K 0.350 0.380 8.89 9.65
R 0.180 0.215 4.45 5.45
S 0.025 0.040 0.63 1.01
V 0.035 0.050 0.89 1.27
Z 0.155 −−− 3.93 −−−
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
**----- End of picture text -----**
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