# Power MOSFET, P Channel, 60 V, 15.5 A, 0.15 ohm, TO-252 (DPAK), Surface Mount ![Product image](https://novapart.co/image/farnell:2101428RL/) **URL**: https://novapart.co/products/NTD20P06LT4G/power-mosfet-p-channel-60-v-155-a-015-ohm-to-252 **SKU**: NTD20P06LT4G **Manufacturer**: ONSEMI **Category**: Semiconductors - Discretes || FETs || Single MOSFETs **Price**: €0.4220 **Stock**: 1000+ ## Description Transistor Polarity:P Channel; Continuous Drain Current Id:-15.5A; Drain Source Voltage Vds:-60V; On Resistance Rds(on):0.143ohm; Rds(on) Test Voltage Vgs:-5V; Threshold Voltage Vgs:-1.5V ## Specifications | Parameter | Value | |---|---| | Msl | - | | Svhc | No SVHC (25-Jun-2025) | | No. Of Pins | 3Pins | | Channel Type | P Channel | | Product Range | - | | Qualification | - | | Power Dissipation | 65W | | Transistor Mounting | Surface Mount | | Rds(On) Test Voltage | 5V | | Transistor Case Style | TO-252 (DPAK) | | Drain Source Voltage Vds | 60V | | Operating Temperature Max | 175°C | | Continuous Drain Current Id | 15.5A | | Drain Source On State Resistance | 0.15ohm | | Gate Source Threshold Voltage Max | 1.5V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:2101428RL/) ## NTD20P06L, NTDV20P06L ## Power MOSFET ## **−60 V, −15.5 A, Single P−Channel, DPAK** ## **Features** - Withstands High Energy in Avalanche and Commutation Modes - Low Gate Charge for Fast Switching ## **www.onsemi.com** - AEC Q101 Qualified − NTDV20P06L - These Devices are Pb−Free and are RoHS Compliant **==> picture [190 x 44] intentionally omitted <==** **----- Start of picture text -----**
ID MAX
V(BR)DSS RDS(on) TYP (Note 1)
−60 V 130 m @ −5.0 V −15.5 A
re ee ee
**----- End of picture text -----**
## **Applications** - Bridge Circuits - Power Supplies, Power Motor Controls ## **P−Channel** • DC−DC Conversion D **MAXIMUM RATINGS** (TJ = 25 ° C unless otherwise noted) **Parameter Symbol Value Unit** G Drain−to−Source Voltage VDSS −60 V Gate−to−Source Continuous VGS 20 V ~~——~~ Voltage R ~~F~~ S ~~2 eee~~ Non−Repetitive tp 10 ms VGSM 30 Continuous Steady State TA = 25 ° C ID −15.5 A **MARKING DIAGRAMS** Drain Current 4 (Note 1) 4 Drain ~~—|~~ Power DissipaSteady State TA = 25 ° C PD 65 W tion (Note 1) ~~J illil~~ 1[2] 6 ~~rr?~~ 3 Pulsed Drain tp = 10 s IDM 50 A **DPAK** Current ~~EET~~ **CASE 369C** Operating Junction and Storage Temperature TJ, −55 to ° C **STYLE 2** 1 2 3 ~~FE~~ TSTG 175 Gate Drain Source Single Pulse Drain−to−Source Avalanche EAS 304 mJ 4 Energy (VDD = 25 V, VGS = 5 V, IPK = 15 A, 4 Drain L = 2.7 mH, RG = 25 ) ~~ee~~ Lead Temperature for Soldering Purposes TL 260 ° C (1/8” from case for 10 s) **THERMAL RESISTANCE RATINGS** 1 2 3 ~~es——rTrr~~ Junction−to−Case (Drain) **Parameter Symbol** R ~~ee~~ JC **Max** 2.3 ° **Unit** C/W **CASE 369DIPAK/DPAK** . 1 2 3 Junction−to−Ambient – Steady State (Note 1) R JA 80 **STYLE 2** Gate Drain Source Junction−to−Ambient – Steady State (Note 2) R JA 110 20P06L Device Code Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be A = Assembly Location assumed, damage may occur and reliability may be affected. Y = Year 1. Surface−mounted on FR4 board using 1 in sq. pad size WW = Work Week (Cu area = 1.127 in sq. [1 oz] including traces) G = Pb−Free Package ## **MARKING DIAGRAMS** Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Surface−mounted on FR4 board using 1 in sq. pad size (Cu area = 1.127 in sq. [1 oz] including traces) 2. Surface−mounted on FR4 board using the minimum recommended pad size (Cu area = 0.412 in sq.) ## **ORDERING INFORMATION** See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. Publication Order Number: **1** © Semiconductor Components Industries, LLC, 2011 **October, 2016 − Rev. 7** **NTD20P06L/D** ## **NTD20P06L, NTDV20P06L** **ELECTRICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise noted) |**Parameter**|**Symbol**|**Test Condition**|**Test Condition**|**Min**|**Typ**|**Max**|**Units**| |---|---|---|---|---|---|---|---| |**OFF CHARACTERISTICS**|||||||| |Drain−to−Source Breakdown Voltage|V(BR)DSS|VGS= 0 V, ID= −250�A||−60|−74||V| |Drain−to−Source Breakdown Voltage
Temperature Coefficient|V(BR)DSS/TJ||||−64||mV/°C| |Zero Gate Voltage Drain Current|IDSS|VGS= 0 V,
VDS= −60 V|TJ= 25°C|||−1.0|�A| ||||TJ= 150°C|||−10|| |Gate−to−Source Leakage Current|IGSS|VDS= 0 V, VGS|=±20 V|||±100|nA| |**ON CHARACTERISTICS**(Note 3)|||||||| |Gate Threshold Voltage|VGS(TH)|VGS= VDS, ID= −250�A||−1.0|−1.5|−2.0|V| |Gate Threshold Temperature Coefficient|VGS(TH)/TJ||||3.1||mV/°C| |Drain−to−Source On Resistance|RDS(on)|VGS= −5.0 V, ID|= −7.5 A||0.130|0.150|�| |||VGS= −5.0 V, ID|= −15 A||0.143||| |Forward Transconductance|gFS|VDS= −10 V, ID=|−7.5 A||11||S| |Drain−to−Source On−Voltage|VDS(on)|VGS= −5.0 V,
ID= −7.5 A|TJ= 25°C|||−1.2|V| ||||TJ= 150°C|||−1.9|| |**CHARGES AND CAPACITANCES**|||||||| |Input Capacitance|CISS|VGS= 0 V, f = 1 MHz, VDS= −25 V|||740|1190|pF| |Output Capacitance|COSS||||207|300|| |Reverse Transfer Capacitance|CRSS||||66|120|| |Total Gate Charge|QG(TOT)|VGS= −5.0 V, VDS= −48 V,
ID= −18 A|||15|26|nC| |Gate−to−Source Charge|QGS||||4.0||| |Gate−to−Drain Charge|QGD||||7.0||| |**SWITCHING CHARACTERISTICS**(Note 4)|||||||| |Turn−On Delay Time|td(ON)|VGS= −5.0 V, VDD= −30 V,
ID= −15 A, RG= 9.1�|||11|20|ns| |Rise Time|tr||||90|180|| |Turn−Off Delay Time|td(OFF)||||28|50|| |Fall Time|tf||||70|135|| |**DRAIN−SOURCE DIODE CHARACTERISTICS**|||||||| |Forward Diode Voltage|VSD|VGS= 0 V, IS= −15 A|TJ= 25°C||1.5|2.5|V| ||||TJ= 150°C||1.3||| |Reverse Recovery Time|tRR|VGS= 0 V, dIS/dt= 100 A/�s,
IS= −12 A|||60||ns| |Charge Time|ta||||39||| |Discharge Time|tb||||21||| |Reverse Recovery Charge|QRR||||0.13||nC| 3. Pulse Test: pulse width � 300 � s, duty cycle � 2% 4. Switching characteristics are independent of operating junction temperatures Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. **www.onsemi.com** **2** **NTD20P06L, NTDV20P06L** ## **TYPICAL PERFORMANCE CURVES** (TJ = 25 ° C unless otherwise noted) **==> picture [492 x 617] intentionally omitted <==** **----- Start of picture text -----**
40 40
35 VGS = −10 V VGS = −6 V T J = −55 ° C
VGS = −9 V V GS = −5.5 V
30 30
VGS = −8 V V GS = −5 V
25 V GS = −7 V VGS = −4.5 V T J = 25 ° C T J = 125 ° C
20 20
VGS = −4 V
15
10 VGS = −3.5 V 10
5 VGS = −3 V
TJ = 25 ° C VDS � 10 V
0 0
0 1 2 3 4 5 6 7 8 9 10 0 1 2 3 4 5 6 7 8 9
−VDS, DRAIN−TO−SOURCE VOLTAGE (V) −VDS, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
0.5 0.25
0.45 VGS = −5 V 0.225 TJ = 25 ° C
0.4 0.2
0.35 0.175
0.3 0.15
0.25 TJ = 125 ° C 0.125 VGS = −5 V
0.2 0.1 VGS = −10 V
0.15 TJ = 25 ° C 0.075
0.1 TJ = −55 ° C 0.05
0.05 0.025
0 0
0 5 10 15 20 25 30 0 3 6 9 12 15 18 21 24
−ID, DRAIN CURRENT (A) −ID, DRAIN CURRENT (A)
Figure 3. On−Resistance versus Drain Current Figure 4. On−Resistance versus Drain Current
and Temperature and Gate Voltage
2 10000
1.8 ID = −7.5 A VGS = 0 V
1.6 VGS = −5 V 1000 TJ = 150 ° C
1.4
1.2 TJ = 125 ° C
1 100
0.8
0.6
10
0.4
0.2
0 1
−50 −25 0 25 50 75 100 125 150 5 10 15 20 25 30 35 40 45 50 55 60
TJ, JUNCTION TEMPERATURE ( ° C) −VDS, DRAIN−TO−SOURCE VOLTAGE (V)
, DRAIN CURRENT (A) , DRAIN CURRENT (A)
D D
−I −I
) �
)( �
, DRAIN−TO−SOURCE RESISTANCE , DRAIN−TO−SOURCE RESISTANCE (
DS(on)
R DS(on)
R
, LEAKAGE (nA)
D
(NORMALIZED) −I
, DRAIN−TO−SOURCE RESISTANCE
DS(on)
R
**----- End of picture text -----**
**Figure 5. On−Resistance Variation with Temperature** **Figure 6. Drain−to−Source Leakage Current versus Voltage** **www.onsemi.com** **3** **NTD20P06L, NTDV20P06L** **==> picture [254 x 204] intentionally omitted <==** **----- Start of picture text -----**
2400
2200 V DS = 0 V V GS = 0 V T J = 25 ° C
2000
1800 C iss
1600
1400
1200 C rss
1000
Ciss
800
600
Coss
400
200 C rss
0
−10 −5 0 5 10 15 20 25
−VGS −VDS
GATE−TO−SOURCE OR DRAIN−TO−SOURCE
VOLTAGE (V)
C, CAPACITANCE (pF)
**----- End of picture text -----**
**Figure 7. Capacitance Variation** **==> picture [284 x 182] intentionally omitted <==** **----- Start of picture text -----**
7.5 60
ID = −15 A TJ = 25 ° C
6.25 50
5.0 QG 40
VDS
3.75 VGS 30
Qgs QGD
2.5 20
1.25 10
0 0
0 4 8 12 16
Qg, TOTAL GATE CHARGE (nC)
V
DS
(V) (V)
, GATE−TO−SOURCE VOLTAGE
GS
−V , DRAIN−TO−SOURCE VOLTAGE
**----- End of picture text -----**
**Figure 8. Gate−to−Source and Drain−to−Source Voltage versus Total Charge** **==> picture [490 x 191] intentionally omitted <==** **----- Start of picture text -----**
1000 20
VDD = −30 V VGS = 0 V
ID = −15 A TJ = 25 ° C
VGS = −5 V 15
100 tR
tF
10
td(off)
10
td(on) 5
1 0
1 10 100 0 0.25 0.5 0.75 1 1.25 1.5 1.75
Rg, GATE RESISTANCE ( � ) −VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation Figure 10. Diode Forward Voltage versus
versus Gate Resistance Current
t, TIME (nS)
, SOURCE CURRENT (A)
S
−I
**----- End of picture text -----**
**www.onsemi.com** **4** **NTD20P06L, NTDV20P06L** **==> picture [492 x 454] intentionally omitted <==** **----- Start of picture text -----**
1000 350
VGS = −15 V I D = −15 A
Single Pulse 300
TC = 25 ° C
100
250
100
200
10
1
150
10 ms
100
1 dc
RDS(on) Limit
50
Thermal Limit
Package Limit
0.1 0
0.1 1 10 100 25 50 75 100 125 150
−VDS, DRAIN−TO−SOURCE VOLTAGE (V) TJ, STARTING JUNCTION TEMPERATURE ( ° C)
Figure 11. Maximum Rated Forward Biased Figure 12. Maximum Avalanche Energy versus
Safe Operating Area Starting Junction Temperature
10
D = 0.5
1
0.2
0.1
0.05
0.1
0.02
0.01
Single Pulse
0.01
0.000001 0.00001 0.0001 0.001 0.01 0.1 1
t, TIME (s)
Figure 13. Thermal Response
, DRAIN CURRENT (A)
D
−I
AVALANCHE ENERGY (mJ)
EAS, SINGLE PULSE DRAIN−TO−SOURCE
, EFFECTIVE TRANSIENT THERMAL RESPONSE
C/W)jc( °
�
R
**----- End of picture text -----**
## **ORDERING INFORMATION** |**ORDERING INFORMATION**||| |---|---|---| |**Device**|**Package**|**Shipping**†| |NTD20P06LG|DPAK
(Pb−Free)|75 Units / Rail| |NTD20P06LT4G||2500 / Tape & Reel| |NTDV20P06LT4G||2500 / Tape & Reel| |NTDV20P06LT4G−VF01||2500 / Tape & Reel| †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. **www.onsemi.com** **5** **NTD20P06L, NTDV20P06L** ## **PACKAGE DIMENSIONS** **==> picture [104 x 29] intentionally omitted <==** **----- Start of picture text -----**
DPAK (SINGLE GAUGE)
CASE 369C−01
ISSUE F
**----- End of picture text -----**
**==> picture [311 x 248] intentionally omitted <==** **----- Start of picture text -----**
A
E C
A
b3 B
c2
4
L3 Z
D
DETAIL A H
1 2 3
L4 NOTE 7
b2 c BOTTOM VIEW
e SIDE VIEW
b
TOP VIEW 0.005 (0.13) M C
Z Z
H
L2 [GAUGE] PLANE C SEATINGPLANE
L
A1 BOTTOM VIEW
L1 ALTERNATE
CONSTRUCTIONS
DETAIL A
ROTATED 90 CW �
**----- End of picture text -----**
NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.006 INCHES PER SIDE. |5.
6.
7.|DIME
OUTE
DATU
PLAN
OPTI|**MIN**
**MAX**
**MIN**
**MAX**
**MILLIMETERS**
**INCHES**
0.235
0.245
5.97
6.22
0.250
0.265
6.35
6.73
0.086
0.094
2.18
2.38
0.025
0.035
0.63
0.89
0.018
0.024
0.46
0.61
0.028
0.045
0.72
1.14
0.018
0.024
0.46
0.61
0.090 BSC
2.29 BSC
0.180
0.215
4.57
5.46
−−−
0.040
−−−
1.01
0.055
0.070
1.40
1.78
0.035
0.050
0.89
1.27
0.155
−−−
3.93
−−−
NSIONS D AND E ARE DETERMINED AT THE
RMOST EXTREMES OF THE PLASTIC BODY.
MS A AND B ARE DETERMINED AT DATUM
E H.
ONAL MOLD FEATURE.
0.370
0.410
9.40
10.41
0.000
0.005
0.00
0.13
0.114 REF
2.90 REF
0.020 BSC
0.51 BSC|**MIN**
**MAX**
**MIN**
**MAX**
**MILLIMETERS**
**INCHES**
0.235
0.245
5.97
6.22
0.250
0.265
6.35
6.73
0.086
0.094
2.18
2.38
0.025
0.035
0.63
0.89
0.018
0.024
0.46
0.61
0.028
0.045
0.72
1.14
0.018
0.024
0.46
0.61
0.090 BSC
2.29 BSC
0.180
0.215
4.57
5.46
−−−
0.040
−−−
1.01
0.055
0.070
1.40
1.78
0.035
0.050
0.89
1.27
0.155
−−−
3.93
−−−
NSIONS D AND E ARE DETERMINED AT THE
RMOST EXTREMES OF THE PLASTIC BODY.
MS A AND B ARE DETERMINED AT DATUM
E H.
ONAL MOLD FEATURE.
0.370
0.410
9.40
10.41
0.000
0.005
0.00
0.13
0.114 REF
2.90 REF
0.020 BSC
0.51 BSC|**MIN**
**MAX**
**MIN**
**MAX**
**MILLIMETERS**
**INCHES**
0.235
0.245
5.97
6.22
0.250
0.265
6.35
6.73
0.086
0.094
2.18
2.38
0.025
0.035
0.63
0.89
0.018
0.024
0.46
0.61
0.028
0.045
0.72
1.14
0.018
0.024
0.46
0.61
0.090 BSC
2.29 BSC
0.180
0.215
4.57
5.46
−−−
0.040
−−−
1.01
0.055
0.070
1.40
1.78
0.035
0.050
0.89
1.27
0.155
−−−
3.93
−−−
NSIONS D AND E ARE DETERMINED AT THE
RMOST EXTREMES OF THE PLASTIC BODY.
MS A AND B ARE DETERMINED AT DATUM
E H.
ONAL MOLD FEATURE.
0.370
0.410
9.40
10.41
0.000
0.005
0.00
0.13
0.114 REF
2.90 REF
0.020 BSC
0.51 BSC|**MIN**
**MAX**
**MIN**
**MAX**
**MILLIMETERS**
**INCHES**
0.235
0.245
5.97
6.22
0.250
0.265
6.35
6.73
0.086
0.094
2.18
2.38
0.025
0.035
0.63
0.89
0.018
0.024
0.46
0.61
0.028
0.045
0.72
1.14
0.018
0.024
0.46
0.61
0.090 BSC
2.29 BSC
0.180
0.215
4.57
5.46
−−−
0.040
−−−
1.01
0.055
0.070
1.40
1.78
0.035
0.050
0.89
1.27
0.155
−−−
3.93
−−−
NSIONS D AND E ARE DETERMINED AT THE
RMOST EXTREMES OF THE PLASTIC BODY.
MS A AND B ARE DETERMINED AT DATUM
E H.
ONAL MOLD FEATURE.
0.370
0.410
9.40
10.41
0.000
0.005
0.00
0.13
0.114 REF
2.90 REF
0.020 BSC
0.51 BSC| |---|---|---|---|---|---| ||**DIM**|**INCHES**||**MILLIMETERS**|| |||**MIN**|**MAX**|**MIN**|**MAX**| ||**A**|0.086|0.094|2.18|2.38| ||**A1**|0.000|0.005|0.00|0.13| ||**b**|0.025|0.035|0.63|0.89| ||**b2**|0.028|0.045|0.72|1.14| ||**b3**|0.180|0.215|4.57|5.46| ||**c**|0.018|0.024|0.46|0.61| ||**c2**|0.018|0.024|0.46|0.61| ||**D**
|0.235
|0.245
|5.97
|6.22
| ||**E**|0.250|0.265|6.35|6.73| ||**e**
**H**|0.090 BSC
0370
0410||2.29 BSC
940
1041|| ||**L**
|0.055
.|0.070
.|1.40
.|1.78
.| ||**L1**|0.114 REF||2.90 REF|| ||**L2**|0.020 BSC||0.51 BSC|| ||**L3**|0.035|0.050|0.89|1.27| ||**L4**|−−−|0.040|−−−|1.01| ||**Z**|0.155|−−−|3.93|−−−| **==> picture [51 x 32] intentionally omitted <==** **----- Start of picture text -----**
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
**----- End of picture text -----**
## **SOLDERING FOOTPRINT*** **==> picture [184 x 112] intentionally omitted <==** **----- Start of picture text -----**
6.20 3.00
0.244 0.118
2.58
0.102
5.80
1.60 6.17
0.228
0.063 0.243
SCALE 3:1
� inches [mm] �
**----- End of picture text -----**
*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. **www.onsemi.com** **6** **NTD20P06L, NTDV20P06L** ## **PACKAGE DIMENSIONS** ## **IPAK** CASE 369D−01 ISSUE C **==> picture [186 x 172] intentionally omitted <==** **----- Start of picture text -----**
B C
V R E
4
a
A
S
1 2 3
−T−
SEATING
PLANE K
J
F
H
D 3 PL
G 0.13 (0.005) M T
**----- End of picture text -----**
**==> picture [158 x 185] intentionally omitted <==** **----- Start of picture text -----**
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
INCHES MILLIMETERS
Z DIM MIN MAX MIN MAX
A 0.235 0.245 5.97 6.35
B 0.250 0.265 6.35 6.73
C 0.086 0.094 2.19 2.38
D 0.027 0.035 0.69 0.88
E 0.018 0.023 0.46 0.58
F 0.037 0.045 0.94 1.14
G 0.090 BSC 2.29 BSC
H 0.034 0.040 0.87 1.01
J 0.018 0.023 0.46 0.58
K 0.350 0.380 8.89 9.65
R 0.180 0.215 4.45 5.45
S 0.025 0.040 0.63 1.01
V 0.035 0.050 0.89 1.27
Z 0.155 −−− 3.93 −−−
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
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