# Power MOSFET, N Channel, 80 V, 298 A, 1300 µohm, H-PSOF, Surface Mount
**URL**: https://novapart.co/products/NTBLS1D5N08MC/power-mosfet-n-channel-80-v-298-a-1300-ohm-h-psof
**SKU**: NTBLS1D5N08MC
**Manufacturer**: ONSEMI
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €3.2300
**Stock**: 1000+
**Lead Time**: 141 days (indicative)
## Specifications
| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 8Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 250W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | H-PSOF |
| Drain Source Voltage Vds | 80V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 298A |
| Drain Source On State Resistance | 1300µohm |
| Gate Source Threshold Voltage Max | 3V |
## Datasheet
📄 [Download PDF](https://novapart.co/datasheet/farnell:3367853RL/)
MOSFET - Power, Single N-Channel, TOLL
## NTBLS1D5N08MC 80 V, 1.53 m 298 A
## **Features**
- Low R to Minimize Conduction Losses DS(on)
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- Low QG and Capacitance to Minimize Driver Losses
- Lowers Switching Noise/EMI
- These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
|**V(BR)DSS**|**RDS(ON) MAX**|**ID MAX**|
|---|---|---|
|80 V|1.53 m @ 10 V|@ 10 V
298 A|
||3.7 m @ 6 V||
## **Applications**
- Power Tools, Battery Operated Vacuums
- UAV/Drones, Material Handling
- BMS/Storage, Home Automation
## **MAXIMUM RATINGS** (TJ = 25 ° C unless otherwise noted)
|**MAXIMUM RATINGS**(TJ = 25J = 25= 25°C unless otherwise noted)|**MAXIMUM RATINGS**(TJ = 25J = 25= 25°C unless otherwise noted)|**MAXIMUM RATINGS**(TJ = 25J = 25= 25°C unless otherwise noted)|C unless otherwise noted)|||
|---|---|---|---|---|---|
|**Parameter**
~~es~~|||**Symbol**
~~es~~
~~es~~|**Value**
~~es~~
~~es~~|**Unit**
~~es~~|
|Drain−to−Source Voltage
~~es~~|||VDSS
~~es~~
~~es~~|80
~~es~~
~~es~~|V
~~es~~|
|Gate−to−Source Voltage|||VGS
~~es~~|±20
~~es~~|V|
|Continuous Drain
Current R JC(Note 2)|Steady
State|TC= 25°C|ID|298|A|
|Power Dissipation
R JC(Note 2)||TC= 25°C|PD|250|W|
|Continuous Drain
Current R JA
(Notes 1, 2)|Steady
State
~~ee~~|TA= 25°C|ID|32|A|
|Power Dissipation
R JA(Notes 1, 2)
~~ee~~||TA= 25°C
~~ee~~|PD
~~el~~|2.9
~~el~~|W|
|Pulsed Drain Current
~~ee~~|TA= 25°C, tp= 10 s
~~ee~~||IDM
~~el~~|4487
~~el~~|A|
|Operating Junction and Storage Temperature
Range
~~ee~~|||TJ, Tstg
~~el~~|−55 to
+150
~~el~~|°C|
|Source Current (Body Diode)
~~ee ~~|||IS
~~el~~|192
~~el~~|A|
|Single Pulse Drain−to−Source Avalanche
Energy (IL(pk)= 31 A, L = 3 mH)|||EAS|1441|mJ|
|Lead Temperature Soldering Reflow for Solder-
ing Purposes (1/8″from case for 10 s)|||TL|260|°C|
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D
G
S
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MO−299A
TOLL
CASE 100CU
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## **MARKING DIAGRAM**
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AYWWZZ
NTBLS
1D5N08MC
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Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
## **THERMAL RESISTANCE MAXIMUM RATINGS**
~~es~~ **Parameter Symbol** ~~ee~~ **Value** ~~ee~~ **Unit** Junction−to−Case − Steady State (Note 2) R JC 0.5 ° C/W ~~**e**~~ Junction−to−Ambient − Steady State (Note 2) ~~ee~~ R JA 43
1. Surface−mounted on FR4 board using a 1 in[2] pad size, 1 oz. Cu pad. 2. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted.
NTBLS1D5N08MC = Specific Device Code A = Assembly Location Y = Year WW = Work Week ZZ = Lot Traceability
## **ORDERING INFORMATION**
See detailed ordering, marking and shipping information in the package dimensions section on page 5 of this data sheet.
Publication Order Number: **NTBLS1D5N08MC/D**
**1**
© Semiconductor Components Industries, LLC, 2019 **September, 2019 − Rev. 0**
**NTBLS1D5N08MC**
**Table 1. ELECTRICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise noted)
|**Table 1. ELECTRICAL CHARACTERIS**|**TICS**(TJ= 2|5°C unless otherwise noted)|5°C unless otherwise noted)|||||
|---|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**|**Test Conditions**||**Min**|**Typ**|**Max**|**Units**|
|**OFF CHARACTERISTICS**||||||||
|Drain−to−Source Breakdown Voltage|V(BR)DSS|ID= 250�A, VGS= 0 V||80|−|−|V|
|Drain−to−Source Breakdown Voltage
Temperature Coefficient|V(BR)DSS/TJ|ID= 250�A, ref to 25°C||−|78|−|mV/°C|
|Zero Gate Voltage Drain Current|IDSS|VDS= 80 V,
VGS= 0 V|TJ= 25°C|−|−|1|�A|
||||TJ= 125°C|−|−|100|�A|
|Gate−to−Source Leakage Current|IGSS|VDS= 0 V, VGS=±20 V||−|−|±100|nA|
|**ON CHARACTERISTICS**(Note 3)||||||||
|Gate Threshold Voltage|VGS(th)|VGS= VDS, ID= 710�A||2.0|3.0|4.0|V|
|Negative Threshold Temperature Coefficient|VGS(th)/TJ|ID= 710�A, ref to 25°C||−|−8.3|−|mV/°C|
|Drain−to−Source On Resistance|RDS(on)|VGS= 10 V, ID= 80 A||−|1.30|1.53|m�|
|Drain−to−Source On Resistance|RDS(on)|VGS= 6 V, ID= 63 A||−|2.0|3.7|m�|
|Forward Transconductance|gFS|VDS= 5 V, ID= 80 A||−|220|−|S|
|Gate−Resistance|RG|TA= 25°C||−|0.7|−|�|
|**CHARGES & CAPACTIANCES**||||||||
|Input Capacitance|Ciss|VGS= 0 V, VDS= 40 V, f = 1 MHz||−|8170|−|pF|
|Output Capacitance|Coss|||−|3025|−|pF|
|Reverse Transfer Capacitance|Crss|||−|82|−|pF|
|Total Gate Charge|QG(tot)|VGS= 10 V, VDS= 40 V,
ID= 80 A||−|111|−|nC|
|Threshold Gate Charge|QG(th)|||−|22|−||
|Gate−to−Source Charge|Qgs|||−|35|−||
|Gate−to−Drain Charge|Qgd|||−|23|−||
|Output Charge|Qoss|||−|166|−||
|Sync Charge|Qsync|||−|94|−||
|Plateau Voltage|VP|||−|5|−|V|
|**SWITCHING CHARACTERISTICS, VGS = 10 V**(Note 3)||||||||
|Turn−On Delay Time|td(on)|VGS= 10 V, VDS= 40 V,
ID= 80 A, RG= 6�||−|38|−|ns|
|Rise Time|tr|||−|34|−|ns|
|Turn−Off Delay Time|td(off)|||−|74|−|ns|
|Fall Time|tf|||−|37|−|ns|
|**DRAIN−SOURCE DIODE CHARACTERISTICS**||||||||
|Forward Diode Voltage|VSD|IS= 80 A, VGS= 0 V|TJ= 25°C|−|0.8|1.3|V|
|||IS= 80 A, VGS= 0 V|TJ= 125°C|−|0.7|−|V|
|Reverse Recovery Time|trr|IF= 40 A, di/dt = 300 A/�s||−|19|−|nS|
|Reverse Recovery Charge|Qrr|||−|42|−|nC|
|Reverse Recovery Time|trr|IF= 40 A, di/dt = 1000 A/�s||−|17|−|nS|
|Reverse Recovery Charge|Qrr|||−|121|−|nC|
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Switching characteristics are independent of operating junction temperatures
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**2**
**NTBLS1D5N08MC**
## **TYPICAL CHARACTERISTICS**
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300 8
10 V and 8 V 6.0 V VGS = 5.5 V 6.0 V
250
6
200
150 V GS = 5.5 V 4
100
2
50 8.0 V
10 V
0 0
0 1 2 3 4 5 0 50 100 150 200 250 300
VDS, DRAIN−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)
Figure 1. On−Region Characteristics Figure 2. RDS(on) Normalized vs. ID
2.0 20
ID = 80 A ID = 80 A
1.8
VGS = 10 V
15
1.6
1.4
10
1.2 TJ = 25 ° C
1.0
5 TJ = 125 ° C
0.8
0.6 0
−75 −50 −25 0 25 50 75 100 125 150 4 5 6 7 8 9 10
TJ, JUNCTION TEMPERATURE ( ° C) VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 3. RDS(on) vs. Junction Temperature Figure 4. On−Resistance vs. Gate−to−Source
Voltage
300 300
VDS = 5 V 100 V GS = 0 V
250
10
200
1
150
TJ = 25 ° C
0.1
100 TJ = 150 ° C
50 0.01
TJ = 150 ° C TJ = −55 ° C T J = 25 ° C T J = −55 ° C
0 0.001
3 4 5 6 7 0 0.2 0.4 0.6 0.8 1.0 1.2
VGS, GATE−TO−SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V)
, NORMALIZED DRAIN−
, DRAIN CURRENT (A)
ID
DS(on) SOURCE ON−RESISTANCE
R
) �
, NORMALIZED DRAIN−
, ON−RESISTANCE (m
DS(on) SOURCE ON−RESISTANCE
R DS(on)
R
, DRAIN CURRENT (A)
ID
, REVERSE DRAIN CURRENT (A)
IS
**----- End of picture text -----**
**Figure 5. Drain Current vs. Gate−to−Source Voltage**
**Figure 6. Reverse Drain Current vs. Body Diode Forward Voltage**
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**3**
**NTBLS1D5N08MC**
## **TYPICAL CHARACTERISTICS**
**==> picture [491 x 382] intentionally omitted <==**
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10 100K
VDD = 30 V
8 VDD = 40 V 10K C iss
VDD = 50 V
6
1K Coss
4
100 Crss
2 f = 1 MHz
V GS = 0 V
0 10
0 20 40 60 80 100 120 0.1 1 10 80
CHARGE (nC) VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 7. Gate Charge Figure 8. Capacitance Variation
300 300
VGS = 10 V
250
100
25 ° C Rating
200 VGS = 6 V
125 ° C Rating 100 ° C Rating 150
10
100
50
R � JC = 0.5 ° C/W
1 0
0.001 0.01 0.1 1 10 100 1000 25 50 75 100 125 150
tAV, TIME IN AVALANCHE (mS) TC, CASE TEMPERATURE (C, CASE TEMPERATURE (, CASE TEMPERATURE ( ° C)
CAPACITANCE (pF)
, GATE−TO−SOURCE VOLTAGE (V)
GS
V
, DRAIN CURRENT (A)
, AVALANCHE CURRENT (A) ID
IAS
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TC, CASE TEMPERATURE (C, CASE TEMPERATURE (, CASE TEMPERATURE ( ° C)
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**Figure 10. Drain Current vs. Case Temperature**
**Figure 9. UIL**
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5000 1M
1000
100K
10 � s
100
10K
This Area is 100 � s
10 Limited by RDS(on) 1K
1 ms
1 TC = 25 ° C 10 ms 100
Single Pulse 100 ms/
R � JC = 0.5 ° C/W DC
0.1 10
0.1 1 10 100 300 0.00001 0.0001 0.001 0.01 0.1 1
VDS, DRAIN−TO−SOURCE VOLTAGE (V) t, PULSE WIDTH (s)
, DRAIN CURRENT(A)
ID
, PEAK TRANSIENT POWER (W)
IPEAK
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**Figure 11. Maximum Rated Forward Biased Safe Operating Area**
**Figure 12. Peak Power**
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**4**
**NTBLS1D5N08MC**
## **TYPICAL CHARACTERISTICS**
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10
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Notes:
0.01 0.01 P DM Z R � � JC JC = 0.5 (t) = r ° (t C/W ) x R � JC
Single Pulse t 1 Peak T J = P DM x Z � JC (t) + T C
t 2 Duty Cycle, D = t1/t2
0.001
0.00001 0.0001 0.001 0.01 0.1 1
t, RECTANGULAR PULSE DURATION (s)
, NORMALIZED THERMAL IMPEDANCE
JA
�
Z
**----- End of picture text -----**
**Figure 13. Transient Thermal Impedance**
## **DEVICE ORDERING INFORMATION**
|**Device**|**Marking**|**Package**|**Shipping**†|
|---|---|---|---|
|NTBLS1D5N08MC|NTBLS
1D5N08MC|M0−299A
(Pb−Free)|2000 / Tape & Reel|
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
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**5**
**NTBLS1D5N08MC**
## **PACKAGE DIMENSIONS**
**H−PSOF8L 11.68x9.80** CASE 100CU ISSUE O
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**6**
**NTBLS1D5N08MC**
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◊
**NTBLS1D5N08MC/D**
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**7**
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