# Bipolar Pre-Biased / Digital Transistor, NPN, PNP, 50 V, 50 V, 150 mA, 22 kohm ![Product image](https://novapart.co/image/farnell:3617378/) **URL**: https://novapart.co/products/NSVTB60BDW1T1G/bipolar-pre-biased-digital-transistor-npn-pnp-50-v **SKU**: NSVTB60BDW1T1G **Manufacturer**: ONSEMI **Category**: Semiconductors - Discretes || Transistors || Bipolar Transistors || Pre-Biased / Digital Bipolar Transistors **Price**: €0.0630 **Stock**: 10+ **Lead Time**: 92 days (indicative) ## Specifications | Parameter | Value | |---|---| | Msl | MSL 1 - Unlimited | | Svhc | No SVHC (25-Jun-2025) | | No. Of Pins | 6 Pin | | Product Range | - | | Qualification | AEC-Q101 | | Power Dissipation | 385mW | | Transistor Mounting | Surface Mount | | Transistor Polarity | NPN, PNP | | Transistor Case Style | SOT-363 | | Base Input Resistor R1 | 22kohm | | Dc Current Gain Hfe Min | 80hFE | | Base Emitter Resistor R2 | - | | Operating Temperature Max | 150°C | | Continuous Collector Current | 150mA | | Collector Emitter Voltage Max Npn | 50V | | Collector Emitter Voltage Max Pnp | 50V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:3617378/) **Share Feedback DATA SHEET** Your Opinion Matters **www.onsemi.com** # PNP General Purpose and NPN Bias Resistor Transistor Combination NSTB60BDW1 **==> picture [113 x 216] intentionally omitted <==** **----- Start of picture text -----**
4
5
6
[3]
1 [2]
SOT−363
CASE 419B
STYLE 1
(3) (2) (1)
Q2
Q1
R2 R1
me
(4) (5) (6)
**----- End of picture text -----**
## **Features** - Simplifies Circuit Design - Reduces Board Space - Reduces Component Count - Available in 8 mm, 7 inch/3000 Unit Tape and Reel - ESD Rating − Human Body Model: Class 1B ESD Rating − Machine Model: Class B - NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable - These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant ## **MARKING DIAGRAM** ## **MAXIMUM RATINGS** **==> picture [147 x 104] intentionally omitted <==** **----- Start of picture text -----**
6
71 M
1
71 = Device Code
M = Date Code*
= Pb−Free Package
(Note: Microdot may be in either location)
**----- End of picture text -----**
|Compliant
**MAXIMUM RATINGS**|||**MARKING DIAGRAM**
6| |---|---|---|---| |(TA= 25C unless otherwise noted, common for Q1and Q2)|||| |**Symbol**
**Rating**
**Q1**
**Q2**
**Unit**
VCEO
Collector-Emitter Voltage
−50
50
Vdc
VCBO
Collector-Base Voltage
−50
50
Vdc
VEBO
Emitter−Base Voltage
−6.0
5.0
Vdc
IC
Collector Current − Continuous
−150
150
mAdc
~~=~~|||71 M
1
71
= Device Code
M
= Date Code*
= Pb−Free Package| |Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.|||(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.| |**THERMAL CHARACTERISTICS**|||| |**Symbol**
**Characteristic**
**(One Junction Heated)**
**Max**
**Unit**
PD
Total Device Dissipation
TA= 25C
Derate above 25C
187 (Note 1)
256 (Note 2)
1.5 (Note 1)
2.0 (Note 2)
mW
mW/C
RJA
Thermal Resistance −
Junction-to-Ambient
670 (Note 1)
490 (Note 2)
C/W
**Symbol**
**Characteristic**
**(Both Junctions Heated)**
**Max**
**Unit**
PD
Total Device Dissipation
TA= 25C
Derate above 25C
250 (Note 1)
385 (Note 2)
2.0 (Note 1)
3.0 (Note 2)
mW
mW/C
RJA
Thermal Resistance −
Junction-to-Ambient
493 (Note 1)
325 (Note 2)
C/W
RJL
Thermal Resistance −
Junction-to-Lead
188 (Note 1)
208 (Note 2)
C/W
TJ, Tstg
Junction and Storage Temperature
−55 to +150
C
**Device**
**Package**
**Shipping**†
**ORDERING INFORMATION**
NSTB60BDW1T1G
SOT−363
(Pb−Free)
3,000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D
.
NSVTB60BDW1T1G
SOT−363
(Pb−Free)
3,000 /
Tape & Reel
~~ae~~|||| |1. FR−4 @ Minimum Pad|||| |2. FR−4 @ 1.0 x 1.0 inch Pad|||| Publication Order Number: **NSTB60BDW1T1/D** **1**  Semiconductor Components Industries, LLC, 2015 **January, 2025 − Rev. 5** **NSTB60BDW1** **ELECTRICAL CHARACTERISTICS** (TA = 25C unless otherwise noted) |**Symbol**
**Characteristic**
**Min**
**Typ**
**Max**
**Unit**
**Q1**
V(BR)CBO
Collector-Base Breakdown Voltage (IC= −50Adc, IE= 0)
−50
−
−
Vdc
V(BR)CEO
Collector-Emitter Breakdown Voltage
(IC= −1.0 mAdc, IB= 0)
−50
−
−
Vdc
V(BR)EBO
Emitter−Base Breakdown Voltage (IE= −50 Adc, IE= 0)
−6.0
−
−
Vdc
ICBO
Collector−Base Cutoff Current (VCB= −50 Vdc, IE= 0)
−
−
−0.1
A
~~a~~
~~eS~~
~~aa~~
~~ee ee~~
~~aa~~| |---| |IEBO
Emitter−Base Cutoff Current (VEB= −6.0 Vdc, IB= 0)
−
−
−0.1
A
VCE(sat)
Collector-Emitter Saturation Voltage
(IC= −50 mAdc, IB= −5.0 mAdc) (Note 3)
−
−
−0.5
Vdc
hFE
DC Current Gain (VCE= −10 V, IC= −5.0 mA) (Note 3)
120
−
560
−
fT
Transition Frequency
(VCE= −12 Vdc, IC= −2.0 mAdc, f = 100 MHz)
−
140
−
MHz
COB
Output Capacitance (VCB= −12 Vdc, IE= 0 Adc, f = 1.0 MHz)
−
3.5
−
pF
**Q2**
~~a~~
~~a~~
~~ee~~
~~ee ee ee~~
~~eS~~
~~aa~~
~~ee ee ee~~
~~es~~
~~ee~~| |V(BR)CBO
Collector-Base Breakdown Voltage (IC= 50A, IE= 0)
50
−
−
Vdc
V(BR)CEO
Collector-Emitter Breakdown Voltage
(IC= 1.0 mA, IB= 0) (Note 3)
50
−
−
Vdc
ICBO
Collector−Base Cutoff Current (VCB= 50 V, IE= 0)
−
−
100
nAdc
ICEO
Collector−Emitter Cutoff Current (VCE= 50 V, IB= 0)
−
−
500
nAdc
IEBO
Emitter−Base Cutoff Current (VEB= 6.0 V, IC= 0)
−
−
0.13
mAdc
VCE(sat)
Collector-Emitter Saturation Voltage
(IC= 10 mA, IB= 5.0 mA) (Note 3)
−
−
0.25
Vdc
hFE
DC Current Gain (VCE= 10 V, IC= 5.0 mA) (Note 3)
80
−
−
VOL
Output Voltage (on) (VCC= 5.0 V, VB= 4.0 V, RL= 1.0 k ) (Note 3)
−
−
0.2
Vdc
VOH
Output Voltage (off) (VCC= 5.0 V, VB= 0.25 V, RL= 1.0 k ) (Note 3)
4.9
−
−
Vdc
~~a~~
~~a~~
~~a~~
~~ee ee~~
~~eS~~
~~eS~~
~~eS~~
~~aa~~
~~ee ee ee~~
~~a~~
~~eSa~~| |R1
Input Resistor (Note 3)
15.4
22
28.6
k
~~a~~| |R2/R1
Resistor Ratio (Note 3)
1.70
2.13
2.55
~~ee~~| Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0% > **www.onsemi.com Share Feedback** ~~_________,——~~ **2** Your Opinion Matters **NSTB60BDW1** **TYPICAL ELECTRICAL CHARACTERISTICS − PNP TRANSISTOR** **==> picture [491 x 393] intentionally omitted <==** **----- Start of picture text -----**
2.0 -1.0
1.5 TO oo VTACE = 25 = -10 V  C -0.9-0.8 Co TA = 25  C |nT VBE(sat) T eS @ IC/IB = 10 T 2cLy
1.0 -0.7
THs pee VBE(on) @ VCE = -10 V
ae -0.6 See eee
0.7
-0.5
Coie ITN
0.5 -0.4
pe UN -0.3 EeSeccos
0.3 UAE LAT LATE -0.2 a VCE(sat) @ IC/I | B = 10
ary — _ -0.1 ee ee all l
0.2 LLU eeEET EET 0 pTIC r _ ETH
-0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100
IC, COLLECTOR CURRENT (mAdc) IC, COLLECTOR CURRENT (mAdc)
Figure 1. Normalized DC Current Gain Figure 2. “Saturation” and “On” Voltages
400 10
300 PTTTTE LE EEE ETE EE EE ae Cib EH eo
200 POIPPO EEELLLpj} |_| 7.0 e pS ——o
150 PLE eS VCE = -10 V 5.0 ofPAS Pe TA = 25  C
TA = 25  C
100
80 eeet 3.0 PCEENA“N
60 Poe 2.0 PLETE| EE Cob RLF
40
30
20 a 1.0
-0.5 eS -1.0 eereeaimertes -2.0 -3.0 -5.0 -10 -20 -30 -50 ae -0.4 t -0.6 -1.0 -2.0 -4.0 T -6.0 -10 -20 -30 -40
IC, COLLECTOR CURRENT (mAdc) VR, REVERSE VOLTAGE (VOLTS)
V, VOLTAGE (VOLTS)
hFE, NORMALIZED DC CURRENT GAIN
C, CAPACITANCE (pF)
fT, CURRENT-GAIN — BANDWIDTH PRODUCT (MHz)
**----- End of picture text -----**
**Figure 3. Current−Gain − Bandwidth Product** **Figure 4. Capacitances** **==> picture [488 x 170] intentionally omitted <==** **----- Start of picture text -----**
1.0 150
a
0.50.3 Vf = 1.0 kHzTACE = 25 = -10 V  C eefies | ee eeKyA e 140 PETE Vf = 1.0 kHzCE = -10 V al
scree ct 130 PEELE TA = 25  C al
0.1 P| LLLetyCE LEEefor i TH
eeeee 120 Terr Ee
0.05
pet———| a
0.03
110
SSS CO
0.01 PL EELELLE 100 LLL,Etec ELSeco
-0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -0.1 -0.2 -0.3 -0.5 -1.0 -2.0 -3.0 -5.0 -10
IC, COLLECTOR CURRENT (mAdc) IC, COLLECTOR CURRENT (mAdc)
ob
h , OUTPUT ADMITTANCE (OHMS)
, BASE SPREADING RESISTANCE (OHMS)  rb
**----- End of picture text -----**
**Figure 5. Output Admittance** **Figure 6. Base Spreading Resistance** **www.onsemi.com** **Share Feedback** Your Opinion Matters **3** **NSTB60BDW1** ## **TYPICAL ELECTRICAL CHARACTERISTICS − NPN TRANSISTOR** **==> picture [490 x 594] intentionally omitted <==** **----- Start of picture text -----**
1 1000
IC/IB = 10 TA = −40C 25C V CE = 10 V TA = 85C
SSS SAS 85C SS
100 25C −40C
0.1
ae —— 10 |
Eee ee pf
a poes
0.01 Py] fo fo fo fy | 1 a ee eeeay
| |TUTEoT ET T T
0 10 20 30 40 50 60 70 80 1 10 100
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Figure 7. Maximum Collector Voltage versus Figure 8. DC Current Gain
Collector Current
4 100
 
TA = 85C 25 C −40 C
3.5 Ff f = 1 MHz BS PmSS|
IE = 0 A
3 TA = 25C 10
2.5
2 1 ff
1.5
1 | | oe 0.1 a
0.5
VO = 5 V
0 0.01
ee ee ee HE
0 10 20 30 40 50 60 0 2 4 6 8 10 12 14
VR, REVERSE BIAS VOLTAGE (V) Vin, INPUT VOLTAGE (V)
Figure 9. Output Capacitance Figure 10. Output Current versus Input
Voltage
100
ee
TA = −40C
10 rs | 25C _ | eda
| Ze | [ |f| Jf |
85C
1
Z77-— Ee
ee
VO = 0.2 V
0.1 po a ee
0 10 20 30 40 50 60
IC, COLLECTOR CURRENT (mA)
, DC CURRENT GAIN
FE
h
MAXIMUM COLLECTOR VOLTAGE (V)
CE(sat)
V
, CAPACITANCE (pF)
ob
C
, COLLECTOR CURRENT (mA)
IC
, INPUT VOLTAGE (V)
in
V
**----- End of picture text -----**
**Figure 11. Input Voltage versus Output Current** **www.onsemi.com** **Share Feedback** Your Opinion Matters **4** MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** ## **SC−88 2.00x1.25x0.90, 0.65P** CASE 419B−02 ISSUE Z ## DATE 18 APR 2024 **==> picture [164 x 154] intentionally omitted <==** **----- Start of picture text -----**
GENERIC
MARKING DIAGRAM*
6
io o
XXXM
1 UU U
XXX = Specific Device Code
M = Date Code*
: = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or position may
vary depending upon manufacturing location.
**----- End of picture text -----**
*This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ : ”, may or may not be present. Some products may not follow the Generic Marking. ## **STYLES ON PAGE 2** Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. **==> picture [169 x 8] intentionally omitted <==** **----- Start of picture text -----**
DOCUMENT NUMBER: 98ASB42985B
**----- End of picture text -----**
## **SC−88 2.00x1.25x0.90, 0.65P** ## **PAGE 1 OF 2** ## ## **DESCRIPTION:** **onsemi** and are trademarks of Semiconductor Components Industries, LLC dba onsemi. **onsemi** or its subsidiaries in the United States and/or other countries. **onsemi** reserves the right to make changes without further notice to any products herein. **onsemi** makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. **onsemi** does not convey any license under its patent rights nor the rights of others. www.onsemi.com  Semiconductor Components Industries, LLC, 2019 ## **SC−88 2.00x1.25x0.90, 0.65P** CASE 419B−02 ISSUE Z ## DATE 18 APR 2024 |STYLE 1:|STYLE 2:|STYLE 3:|STYLE 4:|STYLE 5:|STYLE 6:| |---|---|---|---|---|---| |PIN 1. EMITTER 2|CANCELLED|CANCELLED|PIN 1. CATHODE|PIN 1. ANODE|PIN 1. ANODE 2| |2. BASE 2|||2. CATHODE|2. ANODE|2. N/C| |3. COLLECTOR 1|||3. COLLECTOR|3. COLLECTOR|3. CATHODE 1| |4. EMITTER 1|||4. EMITTER|4. EMITTER|4. ANODE 1| |5. BASE 1|||5. BASE|5. BASE|5. N/C| |6. COLLECTOR 2|||6. ANODE|6. CATHODE|6. CATHODE 2| |STYLE 7:|STYLE 8:|STYLE 9:|STYLE 10:|STYLE 11:|STYLE 12:| |PIN 1. SOURCE 2|CANCELLED|PIN 1. EMITTER 2|PIN 1. SOURCE 2|PIN 1. CATHODE 2|PIN 1. ANODE 2| |2. DRAIN 2||2. EMITTER 1|2. SOURCE 1|2. CATHODE 2|2. ANODE 2| |3. GATE 1||3. COLLECTOR 1|3. GATE 1|3. ANODE 1|3. CATHODE 1| |4. SOURCE 1||4. BASE 1|4. DRAIN 1|4. CATHODE 1|4. ANODE 1| |5. DRAIN 1||5. BASE 2|5. DRAIN 2|5. CATHODE 1|5. ANODE 1| |6. GATE 2||6. COLLECTOR 2|6. GATE 2|6. ANODE 2|6. CATHODE 2| |STYLE 13:|STYLE 14:|STYLE 15:|STYLE 16:|STYLE 17:|STYLE 18:| |PIN 1. ANODE|PIN 1. VREF|PIN 1. ANODE 1|PIN 1. BASE 1|PIN 1. BASE 1|PIN 1. VIN1| |2. N/C|2. GND|2. ANODE 2|2. EMITTER 2|2. EMITTER 1|2. VCC| |3. COLLECTOR|3. GND|3. ANODE 3|3. COLLECTOR 2|3. COLLECTOR 2|3. VOUT2| |4. EMITTER|4. IOUT|4. CATHODE 3|4. BASE 2|4. BASE 2|4. VIN2| |5. BASE|5. VEN|5. CATHODE 2|5. EMITTER 1|5. EMITTER 2|5. GND| |6. CATHODE|6. VCC|6. CATHODE 1|6. COLLECTOR 1|6. COLLECTOR 1|6. VOUT1| |STYLE 19:|STYLE 20:|STYLE 21:|STYLE 22:|STYLE 23:|STYLE 24:| |PIN 1. I OUT|PIN 1. COLLECTOR|PIN 1. ANODE 1|PIN 1. D1 (i)|PIN 1. Vn|PIN 1. CATHODE| |2. GND|2. COLLECTOR|2. N/C|2. GND|2. CH1|2. ANODE| |3. GND|3. BASE|3. ANODE 2|3. D2 (i)|3. Vp|3. CATHODE| |4. V CC|4. EMITTER|4. CATHODE 2|4. D2 (c)|4. N/C|4. CATHODE| |5. V EN|5. COLLECTOR|5. N/C|5. VBUS|5. CH2|5. CATHODE| |6. V REF|6. COLLECTOR|6. CATHODE 1|6. D1 (c)|6. N/C|6. CATHODE| |STYLE 25:|STYLE 26:|STYLE 27:|STYLE 28:|STYLE 29:|STYLE 30:| |PIN 1. BASE 1|PIN 1. SOURCE 1|PIN 1. BASE 2|PIN 1. DRAIN|PIN 1. ANODE|PIN 1. SOURCE 1| |2. CATHODE|2. GATE 1|2. BASE 1|2. DRAIN|2. ANODE|2. DRAIN 2| |3. COLLECTOR 2|3. DRAIN 2|3. COLLECTOR 1|3. GATE|3. COLLECTOR|3. DRAIN 2| |4. BASE 2|4. SOURCE 2|4. EMITTER 1|4. SOURCE|4. EMITTER|4. SOURCE 2| |5. EMITTER|5. GATE 2|5. EMITTER 2|5. DRAIN|5. BASE/ANODE|5. GATE 1| |6. COLLECTOR 1|6. DRAIN 1|6. COLLECTOR 2|6. DRAIN|6. CATHODE|6. DRAIN 1| Note: Please refer to datasheet for style callout. If style type is not called out in the datasheet refer to the device datasheet pinout or pin assignment. **==> picture [492 x 37] intentionally omitted <==** **----- Start of picture text -----**
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
DOCUMENT NUMBER: 98ASB42985B Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DESCRIPTION: SC−88 2.00x1.25x0.90, 0.65P PAGE 2 OF 2
**----- End of picture text -----**
**onsemi** and are trademarks of Semiconductor Components Industries, LLC dba **onsemi** or its subsidiaries in the United States and/or other countries. **onsemi** reserves the right to make changes without further notice to any products herein. **onsemi** makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. **onsemi** does not convey any license under its patent rights nor the rights of others. **www.onsemi.com** ~~**2**~~ www.onsemi.com  Semiconductor Components Industries, LLC, 2019 **onsemi** , , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “ **onsemi** ” or its affiliates and/or subsidiaries in the United States and/or other countries. **onsemi** owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. 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