# Bipolar Transistor Array, Complementary NPN and PNP, 40 V, 40 V, 200 mA, 200 mA, 500 mW ![Product image](https://novapart.co/image/farnell:3617501/) **URL**: https://novapart.co/products/NSVT3946DXV6T1G/bipolar-transistor-array-complementary-npn-and-pnp **SKU**: NSVT3946DXV6T1G **Manufacturer**: ONSEMI **Category**: Semiconductors - Discretes || Transistors || Bipolar Transistors || Bipolar Junction Transistor Arrays - BJT **Price**: €0.0570 **Stock**: 10+ **Lead Time**: 78 days (indicative) ## Specifications | Parameter | Value | |---|---| | Msl | MSL 1 - Unlimited | | Svhc | No SVHC (25-Jun-2025) | | No. Of Pins | 6Pins | | Product Range | - | | Qualification | AEC-Q101 | | Transistor Mounting | Surface Mount | | Transistor Polarity | Complementary NPN and PNP | | Power Dissipation Npn | 500mW | | Power Dissipation Pnp | 500mW | | Transistor Case Style | SOT-563 | | Transition Frequency Npn | 300MHz | | Transition Frequency Pnp | 250MHz | | Operating Temperature Max | 150°C | | Dc Current Gain Hfe Min Npn | 100hFE | | Dc Current Gain Hfe Min Pnp | 100hFE | | Continuous Collector Current Npn | 200mA | | Continuous Collector Current Pnp | 200mA | | Collector Emitter Voltage Max Npn | 40V | | Collector Emitter Voltage Max Pnp | 40V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:3617501/) **DATA SHEET www.onsemi.com** ## Complementary General Purpose Transistor ## **SOT-563 CASE 463A** ## NST3946DXV6 The NST3946DXV6T1 device is a spin-off of our popular SOT-23/SOT-323 three-leaded device. It is designed for general purpose amplifier applications and is housed in the SOT-563 six-leaded surface mount package. By putting two discrete devices in one package, this device is ideal for low-power surface mount applications where board space is at a premium. - hFE, 100−300 - Low VCE(sat),  0.4 V - Simplifies Circuit Design **==> picture [122 x 120] intentionally omitted <==** **----- Start of picture text -----**
(3) (2) (1)
Q1 Q2
(4) (5) (6)
NST3946DXV6T1*
* Q1 PNP
Q2 NPN
**----- End of picture text -----**
- Reduces Board Space - Reduces Component Count - NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable ## **MARKING DIAGRAM** **==> picture [22 x 16] intentionally omitted <==** **----- Start of picture text -----**
46 M �
�
**----- End of picture text -----**
- These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant **Table 1. MAXIMUM RATINGS** |**Rating**|**Symbol**|**Value**|**Unit**| |---|---|---|---| |Collector-Emitter Voltage
(NPN)
(PNP)|VCEO|40
−40|Vdc| |Collector-Base Voltage
(NPN)
(PNP)|VCBO|60
−40|Vdc| |Emitter-Base Voltage
(NPN)
(PNP)|VEBO|6.0
−5.0|Vdc| |Collector Current − Continuous
(NPN)
(PNP)|IC|200
−200|mAdc| |Electrostatic Discharge|ESD|HBM>16000,
MM>2000|V| Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. - 46 = Specific Device Code M = Date Code � = Pb-Free Package (Note: Microdot may be in either location) ## **ORDERING INFORMATION** |**Device**
|**Package**|**Shipping**†| |---|---|---| |NST3946DXV6T1G

(|SOT-563
Pb-Free)|4,000 / Tape &
Reel| |NSVT3946DXV6T1G

(|SOT-563
Pb-Free)|4,000 / Tape &
Reel| |**DISCONTINUED**(Note 1)||| |NST3946DXV6T5G

|SOT-563
(Pb-Free)|8,000 / Tape &
Reel| - For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. 1. **DISCONTINUED:** This device is not available. Please contact your **onsemi** representative for information. The most current information on this device may be available on www.onsemi.com. Publication Order Number: **NST3946DXV6T1/D** **1**  Semiconductor Components Industries, LLC, 2014 **November, 2025 − Rev. 4** **NST3946DXV6** ## **Table 2. THERMAL CHARACTERISTICS** |**Table 2. THERMAL CHARACTERISTICS**|||| |---|---|---|---| |**Characteristic (One Junction Heated)**|**Symbol**|**Max**|**Unit**| |Total Device Dissipation
TA= 25C
Derate above 25C|PD|357
(Note 1)
2.9
(Note 1)|mW
mW/C| |Thermal Resistance
Junction-to-Ambient|R�JA|350
(Note 1)|C/W| |**Characteristic (Both Junctions Heated)**|**Symbol**|**Max**|**Unit**| |Total Device Dissipation
TA= 25C
Derate above 25C|PD|500
(Note 1)
4.0
(Note 1)|mW
mW/C| |Thermal Resistance Junction-to-Ambient|R�JA|250
(Note 1)|C/W| |Junction and Storage Temperature Range|TJ, Tstg|55 to +150|C| 1. FR-4 @ Minimum Pad ## **ELECTRICAL CHARACTERISTICS** (TA = 25 C unless otherwise noted) |**Characteristic**|**Symbol**|**Min**|**Max**|**Unit**| |---|---|---|---|---| |**OFF CHARACTERISTICS**||||| |Collector-Emitter Breakdown Voltage (Note 2)
(IC= 1.0 mAdc, IB= 0)
(NPN)
(IC= −1.0 mAdc, IB= 0)
(PNP)|V(BR)CEO|40
−40|−
−|Vdc| |Collector-Base Breakdown Voltage
(IC= 10�Adc, IE= 0)
(NPN)
(IC= −10�Adc, IE= 0)
(PNP)|V(BR)CBO|60
−40|−
−|Vdc| |Emitter-Base Breakdown Voltage
(IE= 10�Adc, IC= 0)
(NPN)
(IE= −10�Adc, IC= 0)
(PNP)|V(BR)EBO|6.0
−5.0|−
−|Vdc| |Base Cutoff Current
(VCE= 30 Vdc, VEB= 3.0 Vdc)
(NPN)
(VCE= −30 Vdc, VEB= −3.0 Vdc)
(PNP)|IBL|−
−|50
−50|nAdc| |Collector Cutoff Current
(VCE= 30 Vdc, VEB= 3.0 Vdc)
(NPN)
(VCE= −30 Vdc, VEB= −3.0 Vdc)
(PNP)|ICEX|−
−|50
−50|nAdc| |**ON CHARACTERISTICS**(Note 2)||||| |DC Current Gain
(IC= 0.1 mAdc, VCE= 1.0 Vdc)
(NPN)
(IC= 1.0 mAdc, VCE= 1.0 Vdc)
(IC= 10 mAdc, VCE= 1.0 Vdc)
(IC= 50 mAdc, VCE= 1.0 Vdc)
(IC= 100 mAdc, VCE= 1.0 Vdc)
(IC= −0.1 mAdc, VCE= −1.0 Vdc)
(PNP)
(IC= −1.0 mAdc, VCE= −1.0 Vdc)
(IC= −10 mAdc, VCE= −1.0 Vdc)
(IC= −50 mAdc, VCE= −1.0 Vdc)
(IC= −100 mAdc, VCE= −1.0 Vdc)|hFE|40
70
100
60
30
60
80
100
60
30|−
−
300
−
−
−
−
300
−
−|−| |Collector-Emitter Saturation Voltage
(IC= 10 mAdc, IB= 1.0 mAdc)
(NPN)
(IC= 50 mAdc, IB= 5.0 mAdc)
(IC= −10 mAdc, IB= −1.0 mAdc)
(PNP)
(IC= −50 mAdc, IB= −5.0 mAdc)|VCE(sat)|−
−
−
−|0.2
0.3
−0.25
−0.4|Vdc| **www.onsemi.com** **2** **NST3946DXV6** ## **ELECTRICAL CHARACTERISTICS** (TA = 25 C unless otherwise noted) |**ELECTRICAL CHARACTERISTICS**(TA= 25C unless otherwise noted)||||| |---|---|---|---|---| |**Characteristic**|**Symbol**|**Min**|**Max**|**Unit**| |**ON CHARACTERISTICS**(Note 2)||||| |Base-Emitter Saturation Voltage
(IC= 10 mAdc, IB= 1.0 mAdc)
(NPN)
(IC= 50 mAdc, IB= 5.0 mAdc)
(IC= −10 mAdc, IB= −1.0 mAdc)
(PNP)
(IC= −50 mAdc, IB= −5.0 mAdc)|VBE(sat)|0.65
−
−0.65
−|0.85
0.95
−0.85
−0.95|Vdc| |**SMALL-SIGNAL CHARACTERISTICS**||||| |Current-Gain − Bandwidth Product
(IC= 10 mAdc, VCE= 20 Vdc, f = 100 MHz)
(NPN)
(IC= −10 mAdc, VCE= −20 Vdc, f = 100 MHz)
(PNP)|fT|300
250|−
−|MHz| |Output Capacitance
(VCB= 5.0 Vdc, IE= 0, f = 1.0 MHz)
(NPN)
(VCB= −5.0 Vdc, IE= 0, f = 1.0 MHz)
(PNP)|Cobo|−
−|4.0
4.5|pF| |Input Capacitance
(VEB= 0.5 Vdc, IC= 0, f = 1.0 MHz)
(NPN)
(VEB= −0.5 Vdc, IC= 0, f = 1.0 MHz)
(PNP)|Cibo|−
−|8.0
10.0|pF| |Input Impedance
(VCE= 10 Vdc, IC= 1.0 mAdc, f = 1.0 kHz)
(NPN)
(VCE= −10 Vdc, IC= −1.0 mAdc, f = 1.0 kHz)
(PNP)|hie|1.0
2.0|10
12|k�| |Voltage Feedback Ratio
(VCE= 10 Vdc, IC= 1.0 mAdc, f = 1.0 kHz)
(NPN)
(VCE= −10 Vdc, IC= −1.0 mAdc, f = 1.0 kHz)
(PNP)|hre|0.5
0.1|8.0
10|X 10−4| |Small-Signal Current Gain
(VCE= 10 Vdc, IC= 1.0 mAdc, f = 1.0 kHz)
(NPN)
(VCE= −10 Vdc, IC= −1.0 mAdc, f = 1.0 kHz)
(PNP)|hfe|100
100|400
400|−| |Output Admittance
(VCE= 10 Vdc, IC= 1.0 mAdc, f = 1.0 kHz)
(NPN)
(VCE= −10 Vdc, IC= −1.0 mAdc, f = 1.0 kHz)
(PNP)|hoe|1.0
3.0|40
60|�mhos| |Noise Figure
(VCE= 5.0 Vdc, IC= 100�Adc, RS= 1.0 k�, f = 1.0 kHz)
(NPN)
(VCE= −5.0 Vdc, IC= −100�Adc, RS= 1.0 k�, f = 1.0 kHz)
(PNP)|NF|−
−|5.0
4.0|dB| |**SWITCHING CHARACTERISTICS**||||| |Delay Time
(VCC= 3.0 Vdc, VBE= −0.5 Vdc)
(NPN)
(VCC= −3.0 Vdc, VBE= 0.5 Vdc)
(PNP)|td|−
−|35
35|ns| |Rise Time
(IC= 10 mAdc, IB1= 1.0 mAdc)
(NPN)
(IC= −10 mAdc, IB1= −1.0 mAdc)
(PNP)|tr|−
−|35
35|| |Storage Time
(VCC= 3.0 Vdc, IC= 10 mAdc)
(NPN)
(VCC= −3.0 Vdc, IC= −10 mAdc)
(PNP)|ts|−
−|200
225|ns| |Fall Time
(IB1= IB2= 1.0 mAdc)
(NPN)
(IB1= IB2= −1.0 mAdc)
(PNP)|tf|−
−|50
75|| Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width  300 � s; Duty Cycle  2.0%. **www.onsemi.com** **3** **NST3946DXV6** ## **(NPN)** **==> picture [486 x 99] intentionally omitted <==** **----- Start of picture text -----**
+3 V +3 V
DUTY CYCLE = 2% 10 < t1 < 500 �s t1
+10.9 V
300 ns +10.9 V 275 DUTY CYCLE = 2% 275
10 k 10 k
0
-�0.5 V
< 1 ns Cs < 4 pF* 1N916 Cs < 4 pF*
-�9.1 V 
< 1 ns
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* Total shunt capacitance of test jig and connectors **Figure 1. Delay and Rise Time Equivalent Test Circuit** **Figure 2. Storage and Fall Time Equivalent Test Circuit** ## **TYPICAL TRANSIENT CHARACTERISTICS** **==> picture [234 x 170] intentionally omitted <==** **----- Start of picture text -----**
10
(NPN)
7.0
5.0
Cibo
3.0
2.0 Cobo
1.0
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 40
REVERSE BIAS VOLTAGE (VOLTS)
CAPACITANCE (pF)
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**Figure 3. Capacitance** **www.onsemi.com** **4** **NST3946DXV6** ## **(NPN)** **==> picture [490 x 637] intentionally omitted <==** **----- Start of picture text -----**
500 500
300 IC/IB = 10 300 VCC = 40 V
IC/IB = 10
200 200
100 100
70 tr @ VCC = 3.0 V 70
50 50
30 30
40 V
20 20
15 V
10 10 (NPN)
(NPN) 2.0 V
7 td @ VOB = 0 V 7
5 5
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Figure 4. Turn-On Time Figure 5. Rise Time
500 500

300200 IC/IB = 20 IC/IB = 10 tIB1 s = t= IsB2 - [1] /8 tf 300200 VIB1CC = I = 40 VB2
IC/IB = 20
100 100
70 70
50 IC/IB = 20 50
30 IC/IB = 10 30 IC/IB = 10
20 20
10 (NPN) 10 (NPN)
7 7
5 5
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Figure 6. Storage Time Figure 7. Fall Time
TYPICAL AUDIO SMALL-SIGNAL CHARACTERISTICS
NOISE FIGURE VARIATIONS
(VCE = 5.0 Vdc, TA = 25 C, Bandwidth = 1.0 Hz)
12 14
SOURCE RESISTANCE = 200 � f = 1.0 kHz
IC = 1.0 mA
10 IC = 1.0 mA 12
SOURCE RESISTANCE = 200 � 10 IC = 0.5 mA
8
IC = 0.5 mA IC = 50 �A
8
6 SOURCE RESISTANCE = 1.0 k IC = 100 �A
IC = 50 �A 6
4
4
2 SOURCE RESISTANCE = 500 � 2
IC = 100 �A (NPN) (NPN
)
0 0
0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 100 0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 100
f, FREQUENCY (kHz) RS, SOURCE RESISTANCE (k OHMS)
Figure 8. Noise Figure Figure 9. Noise Figure
TIME (ns)
r
t , RISE TIME (ns)
f
t , FALL TIME (ns)
t , STORAGE TIME (ns)  s
NF, NOISE FIGURE (dB) NF, NOISE FIGURE (dB)
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**www.onsemi.com** **5** **NST3946DXV6** ## **(NPN)** ## **H PARAMETERS** (VCE = 10 Vdc, f = 1.0 kHz, TA = 25 C) **==> picture [491 x 585] intentionally omitted <==** **----- Start of picture text -----**
300 100
(NPN) 50 (NPN)
200
20
10
100
70 5
50
2
30 1
0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Figure 10. Current Gain Figure 11. Output Admittance
20 10
10 (NPN) 7.0 (NPN)
5.0
5.0
3.0
2.0
2.0
1.0
1.0
0.5
0.7
0.2 0.5
0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Figure 12. Input Impedance Figure 13. Voltage Feedback Ratio
1 � s
1000
100 ms 1 ms
10 ms
100
1 s
(NPN)
10
Single Pulse Test at TA = 25C
1
1 10 100
VCE, COLLECTOR EMITTER VOLTAGE (V)
�
fe
h , CURRENT GAIN
oe
h , OUTPUT ADMITTANCE ( mhos)
-4
ie
h , INPUT IMPEDANCE (k OHMS)
re
h , VOLTAGE FEEDBACK RATIO (x 10 )
, COLLECTOR CURRENT (mA)
IC
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**Figure 14. Safe Operating Area** **www.onsemi.com** **6** **NST3946DXV6** ## **(NPN)** ## **TYPICAL STATIC CHARACTERISTICS** **==> picture [481 x 170] intentionally omitted <==** **----- Start of picture text -----**
2.0
TJ = +125  C (NPN) VCE = 1.0 V
1.0 +25  C
0.7
-�55  C
0.5
0.3
0.2
0.1
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
IC, COLLECTOR CURRENT (mA)
FE
h , DC CURRENT GAIN (NORMALIZED)
**----- End of picture text -----**
**Figure 15. DC Current Gain** **==> picture [481 x 174] intentionally omitted <==** **----- Start of picture text -----**
1.0
(NPN) T J = 25  C
0.8
IC = 1.0 mA 10 mA 30 mA 100 mA
0.6
0.4
0.2
0
0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
IB, BASE CURRENT (mA)
CE
V , COLLECTOR EMITTER VOLTAGE (VOLTS)
**----- End of picture text -----**
**Figure 16. Collector Saturation Region** **==> picture [489 x 170] intentionally omitted <==** **----- Start of picture text -----**
1.2 1.0
TJ = 25  C (NPN) (NPN)
1.0 VBE(sat) @ IC/IB =10 0.5 +25  C TO +125  C
�VC FOR VCE(sat)
0.8 0  
-�55 C TO +25 C
VBE @ VCE =1.0 V
0.6 -�0.5
-�55  C TO +25  C
0.4 -�1.0
VCE(sat) @ IC/IB =10 +25  C TO +125  C
0.2 -�1.5 �VB FOR VBE(sat)
0 -�2.0
1.0 2.0 5.0 10 20 50 100 200 0 20 40 60 80 100 120 140 160 180 200
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)

V, VOLTAGE (VOLTS) COEFFICIENT (mV/ C)
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**Figure 17. “ON” Voltages** **Figure 18. Temperature Coefficients** **www.onsemi.com** **7** **NST3946DXV6** ## **(PNP)** **==> picture [485 x 107] intentionally omitted <==** **----- Start of picture text -----**
3 V 3 V
< 1 ns
+9.1 V
275 275
< 1 ns
+0.5 V 10 k 10 k
0
Cs < 4 pF* 1N916 Cs < 4 pF*
10.6 V
300 ns 10 < t1 < 500 �s
DUTY CYCLE = 2% t1 10.9 V
DUTY CYCLE = 2%
**----- End of picture text -----**
* Total shunt capacitance of test jig and connectors **Figure 19. Delay and Rise Time Equivalent Test Circuit** **Figure 20. Storage and Fall Time Equivalent Test Circuit** ## **TYPICAL TRANSIENT CHARACTERISTICS** **==> picture [234 x 169] intentionally omitted <==** **----- Start of picture text -----**
10
(PNP)
7.0
5.0 Cobo
Cibo
3.0
2.0
1.0
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 40
REVERSE BIAS (VOLTS)
CAPACITANCE (pF)
**----- End of picture text -----**
**Figure 21. Capacitance** TJ = 25  C TJ = 125  C **==> picture [488 x 171] intentionally omitted <==** **----- Start of picture text -----**
500 500
300 (PNP) IC/IB = 10 300 (PNP) VCC = 40 V
200 200 IB1 = IB2
IC/IB = 20
100 100
70 70
50 tr @ VCC = 3.0 V 50
30 15 V 30
20 20 IC/IB = 10
40 V
10 2.0 V 10
7 td @ VOB = 0 V 7
5 5
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
TIME (ns) f
t , FALL TIME (ns)
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**Figure 22. Turn-On Time** **Figure 23. Fall Time** **www.onsemi.com** **8** **NST3946DXV6** ## **(PNP)** ## **TYPICAL AUDIO SMALL-SIGNAL CHARACTERISTICS NOISE FIGURE VARIATIONS** **==> picture [178 x 8] intentionally omitted <==** **----- Start of picture text -----**
(VCE = −5.0 Vdc, TA = 25 C, Bandwidth = 1.0 Hz)
**----- End of picture text -----**
**==> picture [490 x 172] intentionally omitted <==** **----- Start of picture text -----**
5.0 12
SOURCE RESISTANCE = 200 � f = 1.0 kHz IC = 1.0 mA
IC = 1.0 mA
10
4.0
SOURCE RESISTANCE = 200 � IC = 0.5 mA
IC = 0.5 mA 8
3.0
SOURCE RESISTANCE = 2.0 k
IC = 50 �A 6
2.0
4 IC = 50 �A
1.0 SOURCE RESISTANCE = 2.0 kIC = 100 �A 2 IC = 100 �A
(PNP)
(PNP)
0 0
0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 100 0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 100
f, FREQUENCY (kHz) Rg, SOURCE RESISTANCE (k OHMS)
NF, NOISE FIGURE (dB) NF, NOISE FIGURE (dB)
**----- End of picture text -----**
**Figure 24.** **Figure 25.** ## **H PARAMETERS** (VCE = −10 Vdc, f = 1.0 kHz, TA = 25 C) **==> picture [490 x 363] intentionally omitted <==** **----- Start of picture text -----**
300 100
(PNP) 70 (PNP)
50
200
30
100 20
70
10
50
7
30 5
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Figure 26. Current Gain Figure 27. Output Admittance
20 10
10 (PNP) 7.0 (PNP)
7.0 5.0
5.0
3.0
3.0
2.0
2.0
1.0
0.7
1.0
0.5
0.7
0.3
0.2 0.5
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
�
fe
h , DC CURRENT GAIN
oe
h , OUTPUT ADMITTANCE ( mhos)
-4
ie
h , INPUT IMPEDANCE (k OHMS)
re
h , VOLTAGE FEEDBACK RATIO (x 10 )
**----- End of picture text -----**
**Figure 28. Input Impedance** **Figure 29. Voltage Feedback Ratio** **www.onsemi.com** **9** **NST3946DXV6** ## **(PNP)** ## **TYPICAL STATIC CHARACTERISTICS** **==> picture [491 x 587] intentionally omitted <==** **----- Start of picture text -----**
2.0
TJ = +125  C VCE = 1.0 V
+25  C
1.0
0.7
-�55  C
0.5
0.3
(PNP)
0.2
0.1
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
IC, COLLECTOR CURRENT (mA)
Figure 30. DC Current Gain
1.0
(PNP) T J = 25  C
0.8
IC = 1.0 mA 10 mA 30 mA 100 mA
0.6
0.4
0.2
0
0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
IB, BASE CURRENT (mA)
Figure 31. Collector Saturation Region
1.0 1.0
TJ = 25  C VBE(sat) @ IC/IB = 10
0.8 VBE @ VCE = 1.0 V 0.5 �VC FOR VCE(sat) +25  C TO +125  C
0
0.6 -�55  C TO +25  C
(PNP) -�0.5 (PNP)
0.4 +25  C TO +125  C
-�1.0
VCE(sat) @ IC/IB = 10 -�55  C TO +25  C
0.2
-�1.5 �VB FOR VBE(sat)
0 -�2.0
1.0 2.0 5.0 10 20 50 100 200 0 20 40 60 80 100 120 140 160 180 200
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
FE
h , DC CURRENT GAIN (NORMALIZED)
CE
V , COLLECTOR EMITTER VOLTAGE (VOLTS)

V, VOLTAGE (VOLTS)
, TEMPERATURE COEFFICIENTS (mV/ C)
V
�
**----- End of picture text -----**
**Figure 32. “ON” Voltages** **Figure 33. Temperature Coefficients** **www.onsemi.com** **10** **NST3946DXV6** **==> picture [242 x 175] intentionally omitted <==** **----- Start of picture text -----**
1000
1 � s
100 ms 10 ms 1 ms
100
1 s
(PNP)
10
Single Pulse Test at TA = 25 C
1
1 10 100
VCE, COLLECTOR EMITTER VOLTAGE (V)
, COLLECTOR CURRENT (mA)
IC
**----- End of picture text -----**
**Figure 34. Safe Operating Area** **www.onsemi.com** **11** **NST3946DXV6** ## **REVISION HISTORY** |**Revision**|**Description of Changes**|**Date**| |---|---|---| |4|Rebranded the Data Sheet to**onsemi**format.
NST3946DXV6T5G OPN Marked as Discontinued.|11/5/2025| This document has undergone updates prior to the inclusion of this revision history table. The changes tracked here only reflect updates made on the noted approval dates. **www.onsemi.com** **12** MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** **==> picture [314 x 39] intentionally omitted <==** **----- Start of picture text -----**
SOT−563−6 1.60x1.20x0.55, 0.50P
CASE 463A
ISSUE J
DATE 15 FEB 2024
**----- End of picture text -----**
**==> picture [481 x 173] intentionally omitted <==** **----- Start of picture text -----**
GENERIC
MARKING DIAGRAM*
S T YL E 7: S T YL E 8 S T YL E 9:
P I N 1. C ATH OD E P I N 1 , DR AI N P I N 1 , SOURC E 1 O55
2, A NOD E 2, DR AI N 2, G ATE 1
XXM
3. C ATH OD E 3. G ATE 3, DR AI N 2
4. C ATH OD E 4. SOURC E 4. SOURC E 2 1
5, A NOD E 5, DR AI N 5, G ATE 2 —
6. C ATH OD E 6. DR AI N 6. DR AI N 1 XX = Specific Device Code
M = Month Code
. = Pb−Free Package
S T YL E 1 0: S T YL E 1
P I N 1 . C ATH OD E 1 P I N 1 . E M ITTE R 2 *This information is generic. Please refer to
2, N/C 2, B A S E 2 device data sheet for actual part marking.
3. C ATH OD E 2 3, COLL E C T OR 1 Pb−Free indicator, “G” or microdot “ . ”, may
5.4. N/C A NOD E 2 4.5. E BM AITTE S E 1 R 1 or may not be present. Some products may
6. A NOD E 1 6. COLL E C T OR 2 not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
DOCUMENT NUMBER: 98AON11126D Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DESCRIPTION: SOT−563−6 1.60x1.20x0.55, 0.50P PAGE 1 OF 1
**----- End of picture text -----**
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