NSVR0620P2T5G
Small Signal Schottky Diode, Single, 20 V, 500 mA, 520 mV, 1 A, 125 °C
- Manufacturer: ONSEMI
- Product type:
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 2Pins
- Product Range: -
- Qualification: AEC-Q101
- Diode Mounting: Surface Mount
- Diode Case Style: SOD-923
- Diode Configuration: Single
- Forward Voltage Max: 520mV
- Forward Surge Current: 1A
- Reverse Recovery Time: 4ns
- Average Forward Current: 500mA
- Operating Temperature Max: 125°C
- Repetitive Peak Reverse Voltage: 20V
| Delivery and price | |
|---|---|
| Units per pack | 8000 |
| Price | 0.031 € |
| Current stock | 10+ |
| Lead time | 30 days |
**DATA SHEET www.onsemi.com** ## Schottky Barrier Diode # **20 V SCHOTTKY BARRIER DIODE** ## NSR0620P2 Schottky barrier diodes are optimized for very low forward voltage drop and low leakage current and are used in a wide range of dc−dc converter, clamping and protection applications in portable devices. NSR0620P2 in a SOD−923 miniature package enables designers to meet the challenging task of achieving higher efficiency and meeting reduced space requirements. ## **Features** - Very Low Forward Voltage Drop − 350 mV @ 100 mA - Low Reverse Current − 2.0 �A @ 10 V - Continuous Forward Current − 500 mA - Power Dissipation with Minimum Trace − 190 mW - Very High Switching Speed − 4.0 ns @ 10 mA **==> picture [192 x 146] intentionally omitted <==** **----- Start of picture text -----**<br> 1 2<br>CATHODE ANODE<br>MARKING<br>2 DIAGRAM<br>1<br> M<br>SOD−923<br>CASE 514AB 1 2<br>F = Specific Device Code<br>M = Month Code<br>F<br>**----- End of picture text -----**<br> - Low Capacitance − 12 pF @ 1.0 V - NSVR Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable - These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant ## **Typical Applications** - LCD and Keypad Backlighting - Camera Photo Flash - Buck and Boost dc−dc Converters - Reverse Voltage and Current Protection ## **ORDERING INFORMATION** |**Device**|**Package**|**Shipping**†| |---|---|---| |NSR0620P2T5G|SOD−923<br>(Pb−Free)|8000/Tape & Reel| |NSVR0620P2T5G|SOD−923<br>(Pb−Free)|8000/Tape & Reel| - †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. - Clamping & Protection ## **Markets** - Mobile Handsets - MP3 Players - Digital Camera and Camcorders - Notebook PCs & PDAs - GPS ## **MAXIMUM RATINGS** |**MAXIMUM RATINGS**|||| |---|---|---|---| |**Rating**|**Symbol**|**Value**|**Unit**| |Reverse Voltage|VR|20|Vdc| |Forward Continuous Current (DC)|IF|500|mA| |Non−Repetitive Peak Forward Surge<br>Current|IFSM|1.0|A| |ESD Rating: Human Body Model<br>Machine Model|ESD|Class 3B<br>Class C|| Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Publication Order Number: **NSR0620P2/D** **1** © Semiconductor Components Industries, LLC, 2014 **June, 2023 − Rev. 5** **NSR0620P2** ## **THERMAL CHARACTERISTICS** |**Characteristic**|**Symbol**|**Max**|**Unit**| |---|---|---|---| |Thermal Resistance<br>Junction−to−Ambient (Note 1)<br>Total Power Dissipation @ TA= 25°C|R�JA<br>PD|520<br>190|°C/W<br>mW| |Thermal Resistance<br>Junction−to−Ambient (Note 2)<br>Total Power Dissipation @ TA= 25°C|R�JA<br>PD|175<br>570|°C/W<br>mW| |Junction Operating and Storage Temperature Range|TJ, Tstg|−55 to +125|°C| 1. Mounted onto a 4 in square FR−4 board 10 mm sq. 1 oz. Cu 0.06” thick single−sided. Operating to steady state. 2. Mounted onto a 4 in square FR−4 board 1 in sq. 1 oz. Cu 0.06” thick single−sided. Operating to steady state. ## **ELECTRICAL CHARACTERISTICS** (TA = 25 ° C unless otherwise noted) |**ELECTRICAL CHARACTERISTICS**(TA= 25°C unless otherwise note|d)||||| |---|---|---|---|---|---| |**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**| |Reverse Leakage<br>(VR= 10 V)<br>(VR= 20 V)|IR||2.0<br>9.0|10|�A| |Forward Voltage<br>(IF= 10 mA)<br>(IF= 100 mA)<br>(IF= 500 mA)|VF||270<br>350<br>480|310<br>390<br>520|mV| |Total Capacitance<br>(VR= 1.0 V, f = 1 MHz)|CT||12||pF| |Reverse Recovery Time<br>(IF= IR= 10 mA, IR= 1.0 mA)|trr||4.0||ns| Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. **==> picture [430 x 310] intentionally omitted <==** **----- Start of picture text -----**<br> DC Current<br>Source<br>+ − tr tp<br>0.1 � F 0 V<br>10%<br>750 � H IF VR 90%<br>50 � Output 0.1 � F Pulse Generator<br>Pulse Output<br>Generator IF<br>Adjust for IRM DUT trr<br>RL = 50 �<br>iR(REC) = 1 mA<br>Current IRM<br>Transformer Output Pulse<br>(IF = IRM = 10 mA; measured<br>at iR(REC) = 1 mA)<br>50 � Input<br>Oscilloscope<br>1. DC Current Source is adjusted for a Forward Current (IF) of 10 mA.<br>2. Pulse Generator Output is adjusted for a Peak Reverse Recovery Current IRM of 10 mA.<br>3. Pulse Generator transition time << trr.<br>4. IR(REC) is measured at 1 mA. Typically 0.1 X IRM or 0.25 X IRM.<br>5. tp » trr<br>**----- End of picture text -----**<br> **Figure 1. Recovery Time Equivalent Test Circuit** **www.onsemi.com** **2** **NSR0620P2** **==> picture [494 x 397] intentionally omitted <==** **----- Start of picture text -----**<br> 1000 10000<br>125 ° C<br>1000<br>85 ° C<br>100 100<br>125 ° C 10 25 ° C<br>10 85 ° C 1<br>25 ° C −40 ° C 0.1<br>−40 ° C<br>1 0.01<br>0.001<br>0.1 0.0001<br>0 0.1 0.2 0.3 0.4 0.5 0.6 0 2 4 6 8 10 12 14 16 18 20<br>VF, FORWARD VOLTAGE (V) VR, REVERSE VOLTAGE (V)<br>Figure 2. Figure 3.<br>22<br>20<br>18<br>16<br>14<br>12<br>10<br>8<br>6<br>4<br>2<br>0 2 4 6 8 10 12 14 16 18 20<br>VR, REVERSE VOLTAGE (V)<br>Figure 4.<br>A)<br>�<br>, REVERSE CURRENT (<br>, FORWARD CURRENT (mA)IF IR<br>, TOTAL CAPACITANCE (pF)Ct<br>**----- End of picture text -----**<br> **www.onsemi.com** **3** MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** ## **SOD−923 0.80x0.60x0.37** CASE 514AB ISSUE E ## DATE 08 FEB 2024 **==> picture [115 x 95] intentionally omitted <==** **----- Start of picture text -----**<br> GENERIC<br>MARKING DIAGRAM*<br>X M | X M<br>STYLE 1 STYLE 2<br>X = Specific Device Code<br>M = Date Code<br>**----- End of picture text -----**<br> *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ ”, may or may not be present. Some products may not follow the Generic Marking. STYLE 1: STYLE 2: PIN 1. CATHODE (POLARITY BAND) NO POLARITY 2. ANODE ## **DOCUMENT NUMBER:** ## **98AON23284D DESCRIPTION: SOD−923 0.80x0.60x0.37** Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. **PAGE 1 OF 1** **onsemi** and are trademarks of Semiconductor Components Industries, LLC dba **onsemi** or its subsidiaries in the United States and/or other countries. **onsemi** reserves the right to make changes without further notice to any products herein. **onsemi** makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. **onsemi** does not convey any license under its patent rights nor the rights of others. www.onsemi.com © Semiconductor Components Industries, LLC, 2019 **onsemi** , , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “ **onsemi** ” or its affiliates and/or subsidiaries in the United States and/or other countries. **onsemi** owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of **onsemi** ’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. **onsemi** reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and **onsemi** makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using **onsemi** products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by **onsemi** . “Typical” parameters which may be provided in **onsemi** data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. **onsemi** does not convey any license under any of its intellectual property rights nor the rights of others. **onsemi** products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use **onsemi** products for any such unintended or unauthorized application, Buyer shall indemnify and hold **onsemi** and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that **onsemi** was negligent regarding the design or manufacture of the part. **onsemi** is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. ## **ADDITIONAL INFORMATION** **TECHNICAL PUBLICATIONS** : **ONLINE SUPPORT** : www.onsemi.com/support **Technical Library:** www.onsemi.com/design/resources/technical−documentation **For additional information, please contact your local Sales Representative at onsemi Website:** www.onsemi.com www.onsemi.com/support/sales **==> picture [232 x 43] intentionally omitted <==**
Updated at April 29, 2026
onsemi is a premier global supplier of intelligent power and sensing technologies, driving disruptive innovations across the automotive, industrial, and cloud infrastructure markets. Recognized for their commitment to sustainability and reliable supply chains, the company accelerates advancements in vehicle electrification, industrial automation, and 5G networks by solving the industry's most complex design challenges. At the core of their portfolio is an industry-leading selection of discrete semiconductors. This extensive range features thousands of high-performance bipolar transistors, single and dual MOSFETs, and a comprehensive array of diodes, including Zener, Schottky, and fast-recovery rectifiers. Engineered for superior thermal performance and energy efficiency, these foundational components are critical for demanding power conversion, switching, and signal conditioning applications. Beyond essential discretes, onsemi provides a robust suite of advanced power management and circuit protection solutions. Their lineup includes intelligent power modules, single IGBTs, and transient voltage suppression (TVS) diodes designed to safeguard sensitive circuitry. Complimented by integrated passive filters, AC/DC LED driver ICs, and specialized sub-2.4GHz RF transceivers, onsemi equips engineers with the scalable, high-quality technologies needed to build a cleaner, smarter, and more connected world.
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