# Bipolar Transistor Array, Dual NPN, 40 V, 200 mA, 150 mW ![Product image](https://novapart.co/image/farnell:3617495/) **URL**: https://novapart.co/products/NSVMBT3904DW1T3G/bipolar-transistor-array-dual-npn-40-v-200-ma-150 **SKU**: NSVMBT3904DW1T3G **Manufacturer**: ONSEMI **Category**: Semiconductors - Discretes || Transistors || Bipolar Transistors || Bipolar Junction Transistor Arrays - BJT **Price**: €0.0640 **Stock**: 10+ **Lead Time**: 78 days (indicative) ## Specifications | Parameter | Value | |---|---| | Msl | MSL 1 - Unlimited | | Svhc | No SVHC (25-Jun-2025) | | No. Of Pins | 6Pins | | Product Range | - | | Qualification | AEC-Q101 | | Transistor Mounting | Surface Mount | | Transistor Polarity | Dual NPN | | Power Dissipation Npn | 150mW | | Power Dissipation Pnp | - | | Transistor Case Style | SOT-363 | | Transition Frequency Npn | 300MHz | | Transition Frequency Pnp | - | | Operating Temperature Max | 150°C | | Dc Current Gain Hfe Min Npn | 100hFE | | Dc Current Gain Hfe Min Pnp | - | | Continuous Collector Current Npn | 200mA | | Continuous Collector Current Pnp | - | | Collector Emitter Voltage Max Npn | 40V | | Collector Emitter Voltage Max Pnp | - | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:3617495/) **Share Feedback DATA SHEET** Your Opinion Matters **www.onsemi.com** ## Dual General Purpose Transistors **==> picture [494 x 659] intentionally omitted <==** **----- Start of picture text -----**
Dual General Purpose MARKINGDIAGRAM
6
Transistors
SOT−363/SC−88/
XX M
6 SC70−6
MBT3904DW1,
CASE 419B
MBT3904DW2, 1 1
XX = MA for MBT3904DW1T1G
SMBT3904DW1,
MJ for MBT3904DW2T1G
NSVMBT3904DW1 M = Date Code
= Pb - Free Package
The MBT3904DW1 and MBT3904DW2 devices are a spin-off of (Note: Microdot may be in either location)
our popular SOT-23/SOT-323 three-leaded device. It is designed for
general purpose amplifier applications and is housed in the SOT-363 (3) (2) (1)
six-leaded surface mount package. By putting two discrete devices in
one package, this device is ideal for low-power surface mount
applications where board space is at a premium. Q1 Q2
Features
 hFE, 100-300 ae
 Low VCE(sat),  0.4 V (4) (5) (6)
 Simplifies Circuit Design MBT3904DW1T1
STYLE 1
 Reduces Board Space
(3) (2) (1)
 Reduces Component Count
 Available in 8 mm, 7-inch/3,000 Unit Tape and Reel
 S and NSV Prefix for Automotive and Other Applications Requiring Q1 Q2
Unique Site and Control Change Requirements; AEC-Q101 Qualified
and PPAP Capable cla
 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS (4) (5) (6)
Compliant MBT3904DW2T1
STYLE 27
MAXIMUM RATINGS
ORDERING INFORMATION
Rating Symbol Value Unit
Device Package Shipping [†]
Collector - Emitter Voltage VCEO 40 Vdc
MBT3904DW1T1G, SOT - 363 3000 /
Collector - Base Voltage VCBO 60 Vdc (Pb - Free) Tape & Reel
Emitter - Base Voltage VEBO 6.0 Vdc SMBT3904DW1T1G SOT - 363 3000 /
-
Collector Current - Continuous IC 200 mAdc (Pb Free) Tape & Reel
Electrostatic Discharge ESD HBM Class 2 NSVMBT3904DW1T3G SOT - 363 10000 /
MM Class B (Pb - Free) Tape & Reel
Stresses exceeding those listed in the Maximum Ratings table may damage the DISCONTINUED (Note 1)
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected. MBT3904DW2T1G SOT - 363 3000 /
- Tape & Reel
THERMAL CHARACTERISTICS (Pb Free)
SSS EE
Characteristic Symbol Max Unit † For information on tape and reel specifications,
including part orientation and tape sizes, please
Total Package Dissipation (Note 2)TA = 25 C PD 150 mW refer to our Tape and Reel PackagingSpecifications Brochure, BRD8011/D.
Thermal Resistance, R JA 833 C/W 1. DISCONTINUED: This device is not available.
Junction - to - Ambient Please contact your onsemi representative for
information. The most current information on this
Junction and Storage TJ, Tstg −55 to +150 C device may be available on www.onsemi.com.
Temperature Range
=e
2. Device mounted on FR4 glass epoxy printed circuit board using the minimum
recommended footprint.
**----- End of picture text -----**
Publication Order Number: **MBT3904DW1T1/D** **1**  Semiconductor Components Industries, LLC, 2015 **July 2025 − Rev. 12** ## **MBT3904DW1, MBT3904DW2, SMBT3904DW1, NSVMBT3904DW1** **ELECTRICAL CHARACTERISTICS** (TA = 25 C unless otherwise noted) **Characteristic Symbol Min Max Unit** ~~a~~ **OFF CHARACTERISTICS** Collector−Emitter Breakdown Voltage (Note 3) V(BR)CEO Vdc (IC = 1.0 mAdc, IB = 0) 40 − ~~a~~ Collector−Base Breakdown Voltage V(BR)CBO Vdc (IC = 10 Adc, IE = 0) 60 − ~~a~~ Emitter−Base Breakdown Voltage V(BR)EBO Vdc (IE = 10 Adc, IC = 0) 6.0 − ~~a~~ Base Cutoff Current IBL nAdc (VCE = 30 Vdc, VEB = 3.0 Vdc) − 50 ~~a~~ Collector Cutoff Current ICEX nAdc (VCE = 30 Vdc, VEB = 3.0 Vdc) − 50 ~~a~~ **ON CHARACTERISTICS** (Note 3) DC Current Gain hFE − (IC = 0.1 mAdc, VCE = 1.0 Vdc) 40 − (IC = 1.0 mAdc, VCE = 1.0 Vdc) 70 − (IC = 10 mAdc, VCE = 1.0 Vdc) 100 300 (IC = 50 mAdc, VCE = 1.0 Vdc) 60 − (IC = 100 mAdc, VCE = 1.0 Vdc) 30 − Collector−Emitter Saturation Voltage VCE(sat) Vdc (IC = 10 mAdc, IB = 1.0 mAdc) − 0.2 (IC = 50 mAdc, IB = 5.0 mAdc) − 0.3 Base−Emitter Saturation Voltage VBE(sat) Vdc (IC = 10 mAdc, IB = 1.0 mAdc) 0.65 0.85 (IC = 50 mAdc, IB = 5.0 mAdc) − 0.95 **SMALL−SIGNAL CHARACTERISTICS** Current−Gain − Bandwidth Product fT MHz (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) 300 − ~~a~~ Output Capacitance Cobo pF (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) − 4.0 ~~a~~ Input Capacitance Cibo pF (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) − 8.0 ~~a~~ Input Impedance hie k (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) 1.0 10 2.0 12 ~~po~~ Voltage Feedback Ratio hre X 10[−4] (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) 0.5 8.0 0.1 10 ~~po~~ Small−Signal Current Gain hfe − (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) 100 400 100 400 ~~po~~ Output Admittance hoe mhos (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) 1.0 40 3.0 60 ~~eee~~ Noise Figure NF dB (VCE = 5.0 Vdc, IC = 100 Adc, RS = 1.0 k f = 1.0 kHz) − 5.0 3. ~~a~~ Pulse Test: Pulse Width  300 s; Duty Cycle  2.0%. **www.onsemi.com** **Share Feedback** Your Opinion Matters **2** **MBT3904DW1, MBT3904DW2, SMBT3904DW1, NSVMBT3904DW1** ## **SWITCHING CHARACTERISTICS** |**SWITCHING CHARACTERISTICS**|**SWITCHING CHARACTERISTICS**||||| |---|---|---|---|---|---| |**Characteristic**||**Symbol**|**Min**|**Max**|**Unit**| |Delay Time|(VCC= 3.0 Vdc, VBE= −0.5 Vdc)|td|−|35|ns| |Rise Time|(IC= 10 mAdc, IB1= 1.0 mAdc)|tr|−|35|| |Storage Time|(VCC= 3.0 Vdc, IC= 10 mAdc)|ts|−|200|ns| |Fall Time|(IB1= IB2= 1.0 mAdc)|tf|−|50|| **==> picture [478 x 99] intentionally omitted <==** **----- Start of picture text -----**
+3 V +3 V
DUTY CYCLE = 2% 10 < t1 < 500 s t1 +10.9 V
300 ns | li +10.9 V 275 DUTY CYCLE = 2% L — <— 275
10 k 10 k
0
< 1 ns Cs < 4 pF* 1N916 Cs < 4 pF*

< 1 ns
**----- End of picture text -----**
* Total shunt capacitance of test jig and connectors **Figure 1. Delay and Rise Time Equivalent Test Circuit** **Figure 2. Storage and Fall Time Equivalent Test Circuit** **www.onsemi.com** ~~—_—~~ **www.onsemi.com 3** **Share Feedback** Your Opinion Matters **MBT3904DW1, MBT3904DW2, SMBT3904DW1, NSVMBT3904DW1** ## **TYPICAL TRANSIENT CHARACTERISTICS** **==> picture [489 x 608] intentionally omitted <==** **----- Start of picture text -----**
TJ = 25  C
TJ = 125  C
10 5000
7.0 EEEP| | tT PT TT SE 3000 VICCC/IB = 40 V = 10 TE
ET 2000 ST
tt ta
SSS ee
5.0
1000
Se SSSSS
700
Cibo
ee a ee 500 PSS ee
3.0
[ 7 2
300 QT
2.0 CCUTIPPESSIIETT Cobo MS. 200 At! /|
peel [ | EERE LL EteLL H e
CoOL ee eee QA Va
Pe 100 Serr
70 [ce|
1.0 50 Pe
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 40 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
REVERSE BIAS VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA)
Figure 3. Capacitance Figure 4. Charge Data
500 ONE eee eee 500 INANE TE TT [Py]
300 SSE IC/IB = 10 300 TT VCC = 40 V
IC/IB = 10
200 RSNA CTEEE 200 P NA SSET T
NINAN ETE Na ee
100 100
NEN SANE RRSe
70 BN GN Nn ee ee tr @ VCC = 3.0 V 70 pot
50 P 2INONSOSENSSTP ONDENIIN A 50 poeeNR ee TWASeee
SN ON ee ee po ET NAD
30 PINS ANISSNE ET 40 V 30 PETIT
20 Pt TNE NE NNAWNL LT 20 Pt Tt TT SQ ETT
15 V
ee s eee ee eee
10 Sie 10 Pt |TE
7 SSS SSeS td @ VOB = 0 V 2.0 V te 7 SSS SeSea
5 eeee LT iti] ——ft | | 5 aa eeee eeeeee e e
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Figure 5. Turn−On Time Figure 6. Rise Time
500 500
300200 a IC/IB = 20 a IC/IB = 10 tIB1  s = t= IsB2 - [1] /8 tf 300200 RIN J TPT TT VIB1CC = I = 40 VB2
kako SSS J | PSSSIStHHTEHEDAN IC/IB = 20
SS SSSH eeCEN SSUYill |_|Co
100 ee = 100 RRR
7050 eeaSSSa a | ee. IC/IB = 20 ~~ eeeLS 7050 poPERSEee NATIT
30 IC/IB = 10 30 IC/IB = 10
PE 7 PS SST
20 Ptee eee 20 | | {| | | NAA ASHH =
| pf tt TI | | Ste
10 10
7 ptaa a ET eeeEEeee eee e 7 ptaa [EE] eeeseer e|
po eee e e
5 A ee eee 5 poee eee
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Q, CHARGE (pC)
CAPACITANCE (pF)
TIME (ns)
r
t , RISE TIME (ns)
f
t , FALL TIME (ns)
t , STORAGE TIME (ns)  s
**----- End of picture text -----**
**Figure 7. Storage Time** **Figure 8. Fall Time** **www.onsemi.com** **Share Feedback** Your Opinion Matters **4** **MBT3904DW1, MBT3904DW2, SMBT3904DW1, NSVMBT3904DW1** ## **TYPICAL AUDIO SMALL−SIGNAL CHARACTERISTICS NOISE FIGURE VARIATIONS** (VCE = 5.0 Vdc, TA = 25C, Bandwidth = 1.0 Hz) **==> picture [490 x 176] intentionally omitted <==** **----- Start of picture text -----**
12 14
SOURCE RESISTANCE = 200 f = 1.0 kHz
10 aeTNAL IC = 1.0 mA 2hTLLell LUU 12 aaa| Tt | UdF IC = 1.0 mA AAWVAYWILLYANYALAA LATABELLTT
KH SOURCE RESISTANCE = 200 Sean 10 PE IC = 0.5 mA
8
al IC = 0.5 mA aan 7o-ABUI IC = 50 A
NEB: 8 OY ama
6 INET SOURCE RESISTANCE = 1.0 k aiill en) a IC = 100 A il
NY all SEA et TH
PPNOW IC = 50 A null 6 RS 0), AA « TO
4 Nowa ine null NOS ei
4
2 SOURCE RESISTANCE = 500 IC = 100 A Ff SeHUT Tt TT 2 0
0 Poe Lh 0 oeik
0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 100 0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 100
f, FREQUENCY (kHz) RS, SOURCE RESISTANCE (k OHMS)
NF, NOISE FIGURE (dB) NF, NOISE FIGURE (dB)
**----- End of picture text -----**
**Figure 9. Noise Figure** **Figure 10. Noise Figure** ## **h PARAMETERS** (VCE = 10 Vdc, f = 1.0 kHz, TA = 25C) **==> picture [491 x 365] intentionally omitted <==** **----- Start of picture text -----**
300 PL [LLL] EE ET 100 Sa=a eeeeeeSS e e ee e e
50 a eeeee ee e
PLE ELE eeee eee
200
TT Pe 20 PTET A
oo
100 eelPEt | LE ry ——TI 10 P SSp o| ofeerot dT TTY TP PA CT
70 rt th hE hE ETT TTT TTT 5 ee ee ee eee
50
fe Oa 2 EER ERRIT
ell ee
ell a
30 1
0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Figure 11. Current Gain Figure 12. Output Admittance
20 10
PSE eo oe
7.0
10 PT NET TT PEt EHEHH
} SE EHH 5.0 PAG fT [TTT]
5.0
SSS SSS | CONS
3.0
es . ,
2.0 es 2.0 PTTINSTT
OST EE LLL
1.0 Meee NTE
Sa ee eee NLL< a
1.0
0.5 —— Hy
a ee ee ee eee a
a 0.7 po
0.2 fF [tl [Ti ttit [ [| [ [fi 0.5 a
0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
mhos)
fe
h , CURRENT GAIN
oe
h , OUTPUT ADMITTANCE (
-4
ie
h , INPUT IMPEDANCE (k OHMS)
re
h , VOLTAGE FEEDBACK RATIO (x 10 )
**----- End of picture text -----**
**Figure 13. Input Impedance** **Figure 14. Voltage Feedback Ratio** **www.onsemi.com** **Share Feedback** Your Opinion Matters **5** **MBT3904DW1, MBT3904DW2, SMBT3904DW1, NSVMBT3904DW1** ## **TYPICAL STATIC CHARACTERISTICS** **==> picture [489 x 605] intentionally omitted <==** **----- Start of picture text -----**
2.0
TJ = +125  C VCE = 1.0 V
1.0 |EEa ee| es ee +25  C SOT )
0.7 Peta ee eeTTee eeeee  C P| | Pe ef ANNONAUNIRA T
0.5 ee ee NS
ce ee ee
0.3
ee eee
0.2 —TT e ae
pt tt TT EE Ee PANINI
eee
0.1 ie N
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
IC, COLLECTOR CURRENT (mA)
Figure 15. DC Current Gain
1.0
T J = 25  C
Po feeb PEEP TRO Pape
0.8 ee ee eee [eee]
a IC = 1.0 mA 10 mA 30 mA ee 100 mA
a |eeeee e eeeee
0.6 ae ee eee eeeel
0.4 PotaeeNNee| TT NENEeee NG
0.2 NS) See eee eel
eeee
0 eeeeee eel
0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
IB, BASE CURRENT (mA)
Figure 16. Collector Saturation Region
1.2 1.0
TJ = 25  C
1.0 Pee VBE(sat) @ IC/IB =10 0.5 Gee +25  C TO +125  C
VC [ FOR V] CE(sat)
FEES ei? Soa
0.8 0  
C TO +25 C
Te —— ea
VBE @ VCE =1.0 V
Sane es
0.6 SS oe
0.4 Aa )R e s  C TO +25  C
etO00 V ee CE(sat) @ IC/IB =10 4a — ee +25  C TO +125  C
0.2 i — 2 en/A VB [ FOR V] BE(sat) TTT
0 PP ,
1.0 2.0 5.0 10 20 50 100 200 0 20 40 60 80 100 120 140 160 180 200
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Figure 17. “ON” Voltages Figure 18. Temperature Coefficients
FE
h , DC CURRENT GAIN (NORMALIZED)
CE
V , COLLECTOR EMITTER VOLTAGE (VOLTS)

V, VOLTAGE (VOLTS) COEFFICIENT (mV/ C)
**----- End of picture text -----**
**www.onsemi.com** **Share Feedback** Your Opinion Matters **6** **MBT3904DW1, MBT3904DW2, SMBT3904DW1, NSVMBT3904DW1** ## **TYPICAL STATIC CHARACTERISTICS** **==> picture [491 x 173] intentionally omitted <==** **----- Start of picture text -----**
1000 1
10 mSec
TVACE = 25 = 1 VC a po 100 mSec PP ttt
1.0 mSec
= ay COOEEEie oo -——Jpe—-+ HHH
0.1 1.0 Sec
eee NE ll aa AS
a ee eeSeeee. Se. SS. S I
ITT
100 SR AENE\ A LE = | SSS a es SNSESTInn E S
airTahE CUT TT NTTaTTT 0.01 ————ia| ThermalLimit ieeeNNNeeeNTN iil T
FHT a
i SSSae
10 0.001
CCT CCM A Crm) = EGE HES
0.1 1 10 100 1000 1 10 100
IC, COLLECTOR CURRENT (mA) VCE, COLLECTOR EMITTER VOLTAGE (V)
PRODUCT (MHz)
, COLLECTOR CURRENT (A)
, CURRENT−GAIN−BANDWIDTH IC
fT
**----- End of picture text -----**
**Figure 19. Current Gain Bandwidth Product** **Figure 20. Safe Operating Area** **www.onsemi.com** **Share Feedback** Your Opinion Matters **7** **MBT3904DW1, MBT3904DW2, SMBT3904DW1, NSVMBT3904DW1** ## **REVISION HISTORY** |**Revision**|**Description of Changes**|**Date**| |---|---|---| |12|MBT3904DW2T1G OPN Marked as Discontinued + Rebranded the Data Sheet to**onsemi**
format|7/7/2025| This document has undergone updates prior to the inclusion of this revision history table. The changes tracked here only reflect updates made on the noted approval dates. **www.onsemi.com** **Share Feedback** Your Opinion Matters **8** MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** ## **SC−88 2.00x1.25x0.90, 0.65P** CASE 419B−02 ISSUE Z ## DATE 18 APR 2024 **==> picture [164 x 154] intentionally omitted <==** **----- Start of picture text -----**
GENERIC
MARKING DIAGRAM*
6
io o
XXXM
1 UU U
XXX = Specific Device Code
M = Date Code*
: = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or position may
vary depending upon manufacturing location.
**----- End of picture text -----**
*This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ : ”, may or may not be present. Some products may not follow the Generic Marking. ## **STYLES ON PAGE 2** Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. **==> picture [169 x 8] intentionally omitted <==** **----- Start of picture text -----**
DOCUMENT NUMBER: 98ASB42985B
**----- End of picture text -----**
## **SC−88 2.00x1.25x0.90, 0.65P** ## **PAGE 1 OF 2** ## ## **DESCRIPTION:** **onsemi** and are trademarks of Semiconductor Components Industries, LLC dba onsemi. **onsemi** or its subsidiaries in the United States and/or other countries. **onsemi** reserves the right to make changes without further notice to any products herein. **onsemi** makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. **onsemi** does not convey any license under its patent rights nor the rights of others. www.onsemi.com  Semiconductor Components Industries, LLC, 2019 ## **SC−88 2.00x1.25x0.90, 0.65P** CASE 419B−02 ISSUE Z ## DATE 18 APR 2024 |STYLE 1:|STYLE 2:|STYLE 3:|STYLE 4:|STYLE 5:|STYLE 6:| |---|---|---|---|---|---| |PIN 1. EMITTER 2|CANCELLED|CANCELLED|PIN 1. CATHODE|PIN 1. ANODE|PIN 1. ANODE 2| |2. BASE 2|||2. CATHODE|2. ANODE|2. N/C| |3. COLLECTOR 1|||3. COLLECTOR|3. COLLECTOR|3. CATHODE 1| |4. EMITTER 1|||4. EMITTER|4. EMITTER|4. ANODE 1| |5. BASE 1|||5. BASE|5. BASE|5. N/C| |6. COLLECTOR 2|||6. ANODE|6. CATHODE|6. CATHODE 2| |STYLE 7:|STYLE 8:|STYLE 9:|STYLE 10:|STYLE 11:|STYLE 12:| |PIN 1. SOURCE 2|CANCELLED|PIN 1. EMITTER 2|PIN 1. SOURCE 2|PIN 1. CATHODE 2|PIN 1. ANODE 2| |2. DRAIN 2||2. EMITTER 1|2. SOURCE 1|2. CATHODE 2|2. ANODE 2| |3. GATE 1||3. COLLECTOR 1|3. GATE 1|3. ANODE 1|3. CATHODE 1| |4. SOURCE 1||4. BASE 1|4. DRAIN 1|4. CATHODE 1|4. ANODE 1| |5. DRAIN 1||5. BASE 2|5. DRAIN 2|5. CATHODE 1|5. ANODE 1| |6. GATE 2||6. COLLECTOR 2|6. GATE 2|6. ANODE 2|6. CATHODE 2| |STYLE 13:|STYLE 14:|STYLE 15:|STYLE 16:|STYLE 17:|STYLE 18:| |PIN 1. ANODE|PIN 1. VREF|PIN 1. ANODE 1|PIN 1. BASE 1|PIN 1. BASE 1|PIN 1. VIN1| |2. N/C|2. GND|2. ANODE 2|2. EMITTER 2|2. EMITTER 1|2. VCC| |3. COLLECTOR|3. GND|3. ANODE 3|3. COLLECTOR 2|3. COLLECTOR 2|3. VOUT2| |4. EMITTER|4. IOUT|4. CATHODE 3|4. BASE 2|4. BASE 2|4. VIN2| |5. BASE|5. VEN|5. CATHODE 2|5. EMITTER 1|5. EMITTER 2|5. GND| |6. CATHODE|6. VCC|6. CATHODE 1|6. COLLECTOR 1|6. COLLECTOR 1|6. VOUT1| |STYLE 19:|STYLE 20:|STYLE 21:|STYLE 22:|STYLE 23:|STYLE 24:| |PIN 1. I OUT|PIN 1. COLLECTOR|PIN 1. ANODE 1|PIN 1. D1 (i)|PIN 1. Vn|PIN 1. CATHODE| |2. GND|2. COLLECTOR|2. N/C|2. GND|2. CH1|2. ANODE| |3. GND|3. BASE|3. ANODE 2|3. D2 (i)|3. Vp|3. CATHODE| |4. V CC|4. EMITTER|4. CATHODE 2|4. D2 (c)|4. N/C|4. CATHODE| |5. V EN|5. COLLECTOR|5. N/C|5. VBUS|5. CH2|5. CATHODE| |6. V REF|6. COLLECTOR|6. CATHODE 1|6. D1 (c)|6. N/C|6. CATHODE| |STYLE 25:|STYLE 26:|STYLE 27:|STYLE 28:|STYLE 29:|STYLE 30:| |PIN 1. BASE 1|PIN 1. SOURCE 1|PIN 1. BASE 2|PIN 1. DRAIN|PIN 1. ANODE|PIN 1. SOURCE 1| |2. CATHODE|2. GATE 1|2. BASE 1|2. DRAIN|2. ANODE|2. DRAIN 2| |3. COLLECTOR 2|3. DRAIN 2|3. COLLECTOR 1|3. GATE|3. COLLECTOR|3. DRAIN 2| |4. BASE 2|4. SOURCE 2|4. EMITTER 1|4. SOURCE|4. EMITTER|4. SOURCE 2| |5. EMITTER|5. GATE 2|5. EMITTER 2|5. DRAIN|5. BASE/ANODE|5. GATE 1| |6. COLLECTOR 1|6. DRAIN 1|6. COLLECTOR 2|6. DRAIN|6. CATHODE|6. DRAIN 1| Note: Please refer to datasheet for style callout. If style type is not called out in the datasheet refer to the device datasheet pinout or pin assignment. **==> picture [492 x 37] intentionally omitted <==** **----- Start of picture text -----**
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
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DESCRIPTION: SC−88 2.00x1.25x0.90, 0.65P PAGE 2 OF 2
**----- End of picture text -----**
**onsemi** and are trademarks of Semiconductor Components Industries, LLC dba **onsemi** or its subsidiaries in the United States and/or other countries. **onsemi** reserves the right to make changes without further notice to any products herein. **onsemi** makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. **onsemi** does not convey any license under its patent rights nor the rights of others. **www.onsemi.com** ~~**2**~~ www.onsemi.com  Semiconductor Components Industries, LLC, 2019 **onsemi** , , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “ **onsemi** ” or its affiliates and/or subsidiaries in the United States and/or other countries. **onsemi** owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. 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