NSVJ2394SA3T1G

## **NSVJ2394SA3** 

## **N-Channel JFET 15V, 10 to 32mA, 38mS** 

Automotive JFET designed for compact and efficient designs and including high gain performance. AEC-Q101 qualified JFET and PPAP capable suitable for automotive applications. 

## **Features** 

- Large | yfs | 

www.onsemi.com 

**==> picture [123 x 18] intentionally omitted <==**

**----- Start of picture text -----**<br>
ELECTRICAL CONNECTION<br>N-Channel<br>**----- End of picture text -----**<br>


- Small Ciss 

- This Small Package Enables Sets to be Smaller and Thinner 

- Ultralow Noise Figure 

- Pb-Free and RoHS compliance 

- AEC-Q101 qualified and PPAP capable. 

**==> picture [72 x 68] intentionally omitted <==**

**----- Start of picture text -----**<br>
3<br>1 : Source<br>2 : Drain<br>3 : Gate<br>1 2<br>**----- End of picture text -----**<br>


## **Applications** 

- AM Tuner RF Amplifier 

-  Low Noise Amplifier 

## **SPECIFICATIONS** 

**==> picture [32 x 34] intentionally omitted <==**

**----- Start of picture text -----**<br>
3<br>1<br>2<br>**----- End of picture text -----**<br>


## **SC-59 / CP3** 

## **ABSOLUTE MAXIMUM RATINGS** at Ta = 25°C (Note 1) 

|Parameter|Symbol|Value|Unit|
|---|---|---|---|
|Drain-to-Source Voltage|VDSX|15|V|
|Gate-to-Drain Voltage|VGDS|15|V|
|Gate Current|IG|10|mA|
|Gate Current<br>Drain Current|G<br>ID|10<br>50|mA|
|Drain Current<br>Allowable Power Dissipation|D<br>PD|50<br>200|mA<br>mW|
|Operating Junction and<br>Storage Temperature|TJ,TStg|55 to150|C|



Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 

## **MARKING** 

**ORDERING INFORMATION** See detailed ordering and shipping information on page 5 of this data sheet 

**©** Semiconductor Components Industries, LLC, 2015 **November 2015 - Rev. 0** 

**1** 

Publication Order Number : **NSV2394SA3/D** 

**NSVJ2394SA3** 

## **ELECTRICAL CHARACTERISTICS** at Ta = 25°C (Note 2) 

|Parameter|Symbol|Conditions||Value||Unit|
|---|---|---|---|---|---|---|
||||min|typ|max||
|Gate-to-Drain Breakdown Voltage|V(BR)GDS|IG=10A,  VDS= 0V,|15|||V|
|Gate Cutoff Current|IGSS|VGS=10V, VDS= 0V|||1.0|nA|
|Cutoff Voltage|VGS(off)|VDS= 5V, ID= 100A|0.3|0.7|1.5|V|
|Drain Current|IDSS|VDS= 5V,VGS= 0V|10||32|mA|
|Forward Transfer Admittance|| yfs ||VDS= 5V, VGS= 0V, f = 1kHz|20|38||mS|
|Input Capacitance|Ciss|VDS= 5V, VGS= 0V, f = 1MHz||10||pF|
|Reverse Transfer Capacitance|Crss|||2.9||pF|
|Noise Figure|NF|VDS= 5V, Rg = 1kΩ, ID= 1mA, f = 1kHz||1.0||dB|



Note 2 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 

**==> picture [212 x 366] intentionally omitted <==**

**==> picture [212 x 366] intentionally omitted <==**

**www.onsemi.com** 

**2** 

**NSVJ2394SA3** 

**==> picture [212 x 27] intentionally omitted <==**

**----- Start of picture text -----**<br>
2 3 co ae<br>eft ae<br>**----- End of picture text -----**<br>


**www.onsemi.com** 

**3** 

**NSVJ2394SA3** 

**PACKAGE DIMENSIONS** unit : mm 

## **SC-59 / CP3** CASE 318BJ ISSUE O 

**==> picture [159 x 361] intentionally omitted <==**

**----- Start of picture text -----**<br>
A D<br>3X L<br>3<br>E1 E<br>1 2<br>e<br>3X b<br>0.10 M C A<br>TOP VIEW<br>A<br>A2<br>SIDE VIEW A1 C SEATINGPLANE<br>RECOMMENDED<br>SOLDERING FOOTPRINT*<br>3X 3X<br>0.80 1.00<br>3.40<br>0.95<br>PITCH<br>DIMENSIONS: MILLIMETERS<br>**----- End of picture text -----**<br>


**==> picture [40 x 7] intentionally omitted <==**

**----- Start of picture text -----**<br>
END VIEW<br>**----- End of picture text -----**<br>


- NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 

2. CONTROLLING DIMENSION: MILLIMETERS. 

3. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.20 PER SIDE. 

4. DIMENSIONS D AND E1 ARE MEASURED AT THE OUTERMOST EXTREME OF THE PLASTIC BODY. 

5. DIMENSIONS b AND c APPLY TO THE FLAT SECTION OF THE LEAD BETWEEN 0.10 AND 0.20 FROM THE TIP. 

**==> picture [142 x 206] intentionally omitted <==**

**----- Start of picture text -----**<br>
MILLIMETERS<br>DIM MIN MAX<br>A 0.95 1.35<br>A1 0.00 0.10<br>A2 0.20 0.40<br>b 0.35 0.50<br>c 0.10 0.20<br>D 2.75 3.05<br>E 2.30 2.70<br>E1 1.35 1.65<br>3X c e 0.95 BSC<br>L 0.35 0.75<br>GENERIC<br>MARKING DIAGRAM<br>XXX M<br>1<br>XXX = Specific Device Code<br>M = Date Code<br>= Pb-Free Package<br>**----- End of picture text -----**<br>


(Note: Microdot may be in either location) *This information is generic. Please refer to device data sheet for actual part marking. 

*For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 

**www.onsemi.com** 

**4** 

**NSVJ2394SA3** 

## **ORDERING INFORMATION** 

|**ORDERING INFORMATION**||||
|---|---|---|---|
|Device|Marking|Package|Shipping|
|NSVJ2394SA3T1G|YJ|SC-59 3-Lead / CP3<br>Pb-Free)|3,000 / Tape & Reel|



† For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.  http://www.onsemi.com/pub_link/Collateral/BRD8011-D.PDF 

ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiariesin the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitabilityof its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applicationsintended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 

**www.onsemi.com** 

**5**