NSVF6003SB6T1G

Bipolar - RF Transistor, NPN, 12 V, 7 GHz, 800 mW, 150 mA, CPH

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Manufacturer: ONSEMI
Product type: Bipolar RF Transistors
Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:12V; Transition Frequency ft:7GHz; Power Dissipation Pd:800mW; DC Collector Curren; Available until stocks are exhausted
MSL: MSL 1 - Unlimited
SVHC: No SVHC (27-Jun-2024)
No. of Pins: 6Pins
Product Range: -
Qualification: AEC-Q101
Power Dissipation: 800mW
Transistor Mounting: Surface Mount
Transistor Polarity: NPN
Transition Frequency: 7GHz
Transistor Case Style: CPH
DC Current Gain hFE Min: 100hFE
Operating Temperature Max: 150°C
Continuous Collector Current: 150mA
Collector Emitter Voltage Max: 12V

Delivery and price
Units per pack	1000
Price	0.164 €
Current stock	1000+
Lead time	7 days

Datasheet

Updated at March 13, 2026