Illustrative purposes only
NSVF6003SB6T1G
Bipolar - RF Transistor, NPN, 12 V, 7 GHz, 800 mW, 150 mA, CPH
⚠️ Given the current worldwide supply chain situation, we kindly ask you to take the information shown as a guideline.
- Manufacturer: ONSEMI
- Product type: Bipolar RF Transistors
- Product variants: No other variants available. No other names.
- No. of Pins: 6Pins
- Qualification: AEC-Q101
- Power Dissipation: 800mW
- RF Transistor Case: CPH
- DC Current Gain hFE: 100hFE
- Transistor Mounting: Surface Mount
- Transistor Polarity: NPN
- DC Collector Current: 150mA
- Power Dissipation Pd: 800mW
- Transition Frequency: 7GHz
- Transistor Case Style: CPH
- DC Current Gain hFE Min: 100hFE
- Operating Temperature Max: 150°C
- Continuous Collector Current: 150mA
- Collector Emitter Voltage Max: 12V
- Automotive Qualification Standard: AEC-Q101
- Collector Emitter Voltage V(br)ceo: 12V
| Delivery and price | |
|---|---|
| Units per pack | 45000 |
| Price | 0.202 € |
| Current stock | 2619 |
| Lead time | 7 days |
Datasheet
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