# Bipolar - RF Transistor, NPN, 12 V, 6.7 GHz, 800 mW, 100 mA, CPH
**URL**: https://novapart.co/products/NSVF6001SB6T1G/bipolar-rf-transistor-npn-12-v-67-ghz-800-mw-100
**SKU**: NSVF6001SB6T1G
**Manufacturer**: ONSEMI
**Category**: Semiconductors - Discretes || Transistors || Bipolar Transistors || Bipolar RF Transistors
**Price**: €0.2140
**Stock**: 10+
## Specifications
| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (27-Jun-2024) |
| No. Of Pins | 6Pins |
| Product Range | - |
| Qualification | AEC-Q101 |
| Power Dissipation | 800mW |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | NPN |
| Transition Frequency | 6.7GHz |
| Transistor Case Style | CPH |
| Dc Current Gain Hfe Min | 70hFE |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 100mA |
| Collector Emitter Voltage Max | 12V |
## Datasheet
📄 [Download PDF](https://novapart.co/datasheet/farnell:3616999/)
**DATA SHEET www.onsemi.com**
## RF Transistor, NPN Single
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6
5
4
1
2
3
CPH6
CASE 318DB
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## 12 V, 100 mA, fT = 6.7 GHz
## NSVF6001SB6
This RF transistor is designed for low noise amplifier applications. CPH package is suitable for use under high temperature environment because it has superior heat radiation characteristics. This RF transistor is AEC−Q101 qualified and PPAP capable for automotive applications.
## **ELECTRICAL CONNECTION**
**NPN**
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1, 2, 5, 6
1: Collector
2: Collector
3: Base
3
4: Emitter
5: Collector
6: Collector
4
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## **Features**
- Input Voltage Operation: up to 32 V
- High Gain: |S21e|[2] = 11 dB typ (f = 1 GHz)
- High Cut−off Frequency: fT = 6.7 GHz Typ
- Miniature and Thin 6 Pin Package
- High Collector Dissipation (800 mW)
## **MARKING DIAGRAM**
- AEC−Q101 Qualified and PPAP Capable
- These Devices are Pb−Free, Halogen Free and are RoHS Compliant
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HGA M �
�
HGA = Specific Device Code
M = One Digit Data Code
� = Pb−Free Marking
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## **Typical Applications**
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- Low Noise Amplifier for FM Radio
- Low Noise Amplifier for TV
## **ABSOLUTE MAXIMUM RATINGS** (TA = 25C)
|**ABSOLU**|**TE MAXIMUM RATINGS**(TA= 25C)|||
|---|---|---|---|
|**Symbol**|**Parameter**|**Value**|**Unit**|
|VCBO|Collector to Base Voltage|20|V|
|VCEO|Collector to Emitter Voltage|12|V|
|VEBO|Emitter to Base Voltage|2|V|
|IC|Collector Current|100|mA|
|PC|Collector Dissipation(Note 1)|800|mW|
|Tj, Tstg|Operating Junction and Storage
Temperature|−55 to +150|�C|
## **ORDERING INFORMATION**
|**Device**|**Package**|**Shipping**†|
|---|---|---|
|NSVF6001SB6T1G
H|CPH6
(Pb−Free /
alogen Free)|3,000 /
Tape & Reel|
|† For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D
.|||
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Surface mounted on ceramic substrate (250 mm[2] 0.8 mm).
**Table 1. ELECTRICAL CHARACTERISTICS** (TA = 25C)
|**Symbol**|**Parameter**|**Conditions**|**Min**|**Typ**|**Max**|**Unit**|
|---|---|---|---|---|---|---|
|ICBO|Collector Cutoff Current|VCB= 10 V, IE=0A|−|−|1.0|�A|
|IEBO|Emitter Cutoff Current|VEB= 1 V, IC=0A|−|−|10|�A|
|hFE1|DC Current Gain|VCE= 5 V, IC= 30 mA|90|−|180||
|hFE2||VCE= 5 V, IC= 70 mA|70|−|−||
|fT|Gain−Bandwidth Product|VCE= 5 V, IC= 30 mA|5|6.7|−|GHz|
|Cob|Output Capacitance|VCB= 5 V, f = 1 MHz|−|0.95|1.5|pF|
|Cre|Reverse Transfer Capacitance||−|0.6|−|pF|
||S21e|2|Forward Transfer Gain|VCE= 5 V, IC= 30 mA, f=1 GHz|9|11|−|dB|
|NF|Noise Figure|VCE= 5 V, IC= 7 mA, f=1 GHz|−|1.1|2.0|dB|
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pay attention to handling since it is liable to be affected by static electricity due to the high−frequency process adopted.
Publication Order Number: **NSVF6001SB6/D**
**1**
Semiconductor Components Industries, LLC, 2017 **November, 2025 − Rev. 2**
**NSVF6001SB6**
## **TYPICAL CHARACTERISTICS**
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**Figure 1. ICE − VCE**
**Figure 3. hFE − IC**
**Figure 5. Cob − VCB**
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Figure 2. IC − VBE
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**Figure 4. fT − IC**
**Figure 6. Cre − VCB**
**www.onsemi.com**
**2**
**NSVF6001SB6**
## **TYPICAL CHARACTERISTICS** (continued)
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**Figure 7. |S21E|[2] − IC**
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Figure 8. NF − IC
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Figure 9. PC − TA
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**NSVF6001SB6**
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**NSVF6001SB6**
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**NSVF6001SB6**
## **REVISION HISTORY**
|**Revision**|**Description of Changes**|**Date**|
|---|---|---|
|2|Discontinued Document|11/12/2025|
This document has undergone updates prior to the inclusion of this revision history table. The changes tracked here only reflect updates made on the noted approval dates.
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**www.onsemi.com**
**6**
MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS**
## **CPH6 2.90x1.60x0.90, 0.95P**
CASE 318BD ISSUE A
## DATE 20 SEPT 2024
## **GENERIC MARKING DIAGRAM***
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XXXM
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XXX = Specific Device Code M = Date Code = Pb−Free Package
(Note: Microdot may be in either location)
*This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ ”, . may or may not be present. Some products may not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
**DOCUMENT NUMBER: 98AON65440E DESCRIPTION: CPH6 2.90x1.60x0.90, 0.95P**
**PAGE 1 OF 1**
**onsemi** and are trademarks of Semiconductor Components Industries, LLC dba **onsemi** or its subsidiaries in the United States and/or other countries. **onsemi** reserves the right to make changes without further notice to any products herein. **onsemi** makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. **onsemi** does not convey any license under its patent rights nor the rights of others.
www.onsemi.com
© Semiconductor Components Industries, LLC, 2011
**onsemi** , , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “ **onsemi** ” or its affiliates and/or subsidiaries in the United States and/or other countries. **onsemi** owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of **onsemi** ’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. **onsemi** reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and **onsemi** makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using **onsemi** products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by **onsemi** . “Typical” parameters which may be provided in **onsemi** data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. **onsemi** does not convey any license under any of its intellectual property rights nor the rights of others. **onsemi** products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use **onsemi** products for any such unintended or unauthorized application, Buyer shall indemnify and hold **onsemi** and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that **onsemi** was negligent regarding the design or manufacture of the part. **onsemi** is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
## **ADDITIONAL INFORMATION**
**TECHNICAL PUBLICATIONS** : **ONLINE SUPPORT** : www.onsemi.com/support **Technical Library:** www.onsemi.com/design/resources/technical−documentation **For additional information, please contact your local Sales Representative at onsemi Website:** www.onsemi.com www.onsemi.com/support/sales
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## Links
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---
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