# Bipolar - RF Transistor, NPN, 10 V, 7 GHz, 100 mW, 70 mA, SOT-623 ![Product image](https://novapart.co/image/farnell:2981211/) **URL**: https://novapart.co/products/NSVF5488SKT3G/bipolar-rf-transistor-npn-10-v-7-ghz-100-mw-70-ma **SKU**: NSVF5488SKT3G **Manufacturer**: ONSEMI **Category**: Semiconductors - Discretes || Transistors || Bipolar Transistors || Bipolar RF Transistors **Price**: €0.1400 **Stock**: 1000+ **Lead Time**: 2 days (indicative) ## Description Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:10V; Transition Frequency ft:7GHz; Power Dissipation Pd:100mW; DC Collector Current:70mA; DC Current Gain hFE:90hFE; R ## Specifications | Parameter | Value | |---|---| | Msl | MSL 1 - Unlimited | | Svhc | No SVHC (25-Jun-2025) | | No. Of Pins | 3Pins | | Product Range | - | | Qualification | AEC-Q101 | | Power Dissipation | 100mW | | Transistor Mounting | Surface Mount | | Transistor Polarity | NPN | | Transition Frequency | 7GHz | | Transistor Case Style | SOT-623 | | Dc Current Gain Hfe Min | 90hFE | | Operating Temperature Max | 150°C | | Continuous Collector Current | 70mA | | Collector Emitter Voltage Max | 10V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:2981211/) ## NSVF5488SK ## RF Transistor for Low Noise Amplifier ## **10 V, 70 mA, fT = 7 GHz typ. RF Transistor** This RF transistor is designed for RF amplifier applications. SSFP package is contribute to down size of application because it is small surface mount package. This RF transistor is AEC−Q101 qualified and PPAP capable for automotive applications. ## **Features** - Low−noise: NF = 1.0 dB typ. (f = 1 GHz) - High Gain: |S21e|[2] = 12 dB typ. (f = 1 GHz) - • High Cut−off Frequency: fT = 7 GHz typ. - SSFP Package is Pin−compatible with SOT−623 - AEC−Q101 Qualified and PPAP Capable - These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant ## **Typical Applications** - RF Amplifier for RKE - RF Amplifier for ADAS ## **www.onsemi.com** **==> picture [62 x 52] intentionally omitted <==** **----- Start of picture text -----**
3
1
2
SOT−623 / SSFP
CASE 631AC
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## **ELECTRICAL CONNECTION NPN** **==> picture [105 x 73] intentionally omitted <==** **----- Start of picture text -----**
3
1
1 : Base
2 : Emitter
2 3 : Collector
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- RF Amplifier for Remote Engine Starter - RF Amplifier for UHF Application **==> picture [115 x 85] intentionally omitted <==** **----- Start of picture text -----**
MARKING DIAGRAM
LN
: ;
a
LN = Specific Device Code
LOT No. LOT No.
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## **ORDERING INFORMATION** See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. Publication Order Number: **NSVF5488SK/D** **1** © Semiconductor Components Industries, LLC, 2018 **February, 2019 − Rev. 0** **NSVF5488SK** ## **SPECIFICATIONS** ## **ABSOLUTE MAXIMUM RATINGS** at Ta = 25 ° C |**ABSOLUTE MAXIMUM RATINGS**at Ta = 25°C|||| |---|---|---|---| |**Parameter**|**Symbol**|**Value**|**Unit**| |Collector to Base Voltage|VCBO|20|V| |Collector to Emitter Voltage|VCEO|10|V| |Emitter to Base Voltage|VEBO|2|V| |Collector Current|IC|70|mA| |Collector Dissipation|PC|100|mW| |Operating Junction and Storage Temperature|Tj, Tstg|−55 to +150|°C| Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ## **ELECTRICAL CHARACTERISTICS** at Ta = 25 ° C |**Parameter**|**Symbol**|**Conditions**||**Value**||**Unit**| |---|---|---|---|---|---|---| ||||**Min**|**Typ**|**Max**|| |Collector Cutoff Current|ICBO|VCB= 10 V, IE= 0 A|||1.0|�A| |Emitter Cutoff Current|IEBO|VEB= 1 V, IC= 0 A|||10|�A| |DC Current Gain|hFE|VCE= 5 V, IC= 20 mA|90||200|| |Gain−Bandwidth Product|fT|VCE= 5 V, IC= 20 mA|5|7||GHz| |Output Capacitance|Cob|VCB= 10 V, f = 1 MHz||0.7|1.2|pF| |Reverse Transfer Capacitance|Cre|||0.45||pF| |Forward Transfer Gain|| S21e |21|VCE= 5 V, IC= 20 mA, f=1 GHz|9|12||dB| ||| S21e |22|VCE= 2 V, IC= 3 mA, f=1 GHz||8.5||dB| |Noise Figure|NF|VCE= 5 V, IC= 7 mA, f=1 GHz||1.0|1.8|dB| Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pay attention to handling since it is liable to be affected by static electricity due to the high−frequency process adopted. **www.onsemi.com** **2** **NSVF5488SK** ## **TYPICAL CHARACTERISTICS** **==> picture [217 x 607] intentionally omitted <==** **----- Start of picture text -----**
hFE −− IC
3
VCE=5V
2
100
7
5
3
2
10
7
5
3 5 7 1.0 2 3 57 10 223 57 100
Collector Current, IC −− mA
Figure 1.
Cob −− VCB
3
f=1MHz
2
1.0
7
5
3
2
0.1
7
5
7 0.1 25 3 73 1.0 2 5 7 10 2 3
Collector−to−Base Voltage, VCB−−V
Figure 3.
NF −− IC
12
VCE= 5 V
f = 1 GHz
10
8
6
4
2
0
3 5 7 1.0 2 3 57 10 223 57 100
Collector Current, IC −− mA
DC Current Gain, hFE
Output Capacitance, Cob −− pF
Noise Figure, NF −− dB
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**Figure 5.** **==> picture [218 x 622] intentionally omitted <==** **----- Start of picture text -----**
fT −− IC
2
VCE=5V
10
7
5
3
2
1.0
7
5
72 1.0 2 3 5 7 10 2 3 5 7 100
Collector Current, IC −− mA
Figure 2.
Cre −− VCB
3
f=1MHz
2
1.0
7
5
3
2
0.1
7
5
7 0.1 25 3 73 1.0 2 5 7 10 2 3
Collector−to−Base Voltage, VCB−−V
Figure 4.
14 | S21e | [2][ −− I] C
f=1GHz
12
10
8
6
4
2
0
33 57 1.0 2 5 7 10 2 3 5 7 100 2
Collector Current, IC −− mA
Figure 6.
Gain−Bandwidth Product, fT −− GHz
Reverse Transfer Capacitance, Cre −− pF
−− dB
2
| =5V
CE
S21e V 2V
Forward Transfer Gain, �
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**www.onsemi.com** **3** **NSVF5488SK** ## **TYPICAL CHARACTERISTICS** **==> picture [217 x 183] intentionally omitted <==** **----- Start of picture text -----**
PC −− Ta
120
100
80
60
40
20
0
0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta −− � C
Collector Dissipation, PC −− mW
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**Figure 7.** **www.onsemi.com** **4** **NSVF5488SK** ## **S PARAMETERS (COMMON EMITTER)** |**Freq (MHz)**|**|S11|**|�**S11**|**|S21|**|�**S21**|**|S12|**|�**S12**|**|S22|**|�**S22**| |---|---|---|---|---|---|---|---|---| |**VCE = 5 V, IC =**|**7 mA, ZO = 50�**|||||||| |100|0.786|−40.7|17.507|151.3|0.028|70.1|0.898|−20.4| |200|0.677|−72.4|13.998|131.4|0.046|58.0|0.739|−33.4| |400|0.546|−112.7|9.061|108.6|0.064|49.6|0.525|−43.7| |600|0.492|−135.2|6.442|96.1|0.076|49.3|0.423|−46.7| |800|0.473|−150.0|5.005|87.3|0.087|50.8|0.374|−44.4| |1000|0.465|−160.0|4.073|80.4|0.099|52.6|0.346|−49.7| |1200|0.457|−169.5|3.449|74.0|0.111|54.0|0.332|−51.6| |1400|0.451|−176.2|2.989|68.6|0.124|55.2|0.321|−54.1| |1600|0.449|177.8|2.658|63.8|0.138|56.6|0.319|−56.2| |1800|0.454|172.5|2.378|58.4|0.151|56.7|0.313|−60.0| |2000|0.460|167.1|2.154|54.0|0.166|56.7|0.311|−63.2| |**VCE = 5 V, IC =**|**20 mA, ZO = 50�**|||||||| |100|0.601|−65.8|28.967|137.1|0.023|64.1|0.757|−32.9| |200|0.497|−103.7|19.309|116.6|0.035|57.0|0.534|−50.3| |400|0.435|−139.6|10.891|98.6|0.050|58.7|0.345|−50.3| |600|0.419|−156.6|7.461|89.3|0.065|61.3|0.280|−50.7| |800|0.414|−166.6|5.695|82.5|0.081|63.1|0.251|−51.3| |1000|0.413|−174.0|4.613|77.0|0.098|63.8|0.235|−52.9| |1200|0.413|178.6|3.870|71.8|0.114|63.9|0.226|−55.1| |1400|0.411|173.8|3.345|66.9|0.131|63.6|0.221|−57.7| |1600|0.413|169.6|2.960|62.7|0.148|63.2|0.220|−60.2| |1800|0.416|165.1|2.655|58.0|0.165|61.8|0.219|−64.8| |2000|0.422|160.3|2.406|54.0|0.182|60.6|0.218|−68.3| |**VCE = 2 V, IC =**|**3 mA, ZO = 50�**|||||||| |100|0.888|−30.2|9.280|158.6|0.038|73.6|0.949|−15.1| |200|0.815|−56.4|8.218|141.3|0.067|60.5|0.849|−26.9| |400|0.690|−96.0|6.074|116.7|0.098|45.1|0.657|−41.1| |600|0.616|−120.7|4.517|101.4|0.112|38.4|0.539|−47.6| |800|0.584|−138.0|3.610|90.4|0.120|35.8|0.475|−51.2| |1000|0.566|−150.7|2.995|81.9|0.125|35.7|0.434|−54.5| |1200|0.555|−161.2|2.540|74.2|0.131|36.5|0.410|−57.5| |1400|0.546|−169.3|2.213|67.5|0.137|38.4|0.393|−60.7| |1600|0.541|−176.4|1.982|62.0|0.143|40.7|0.391|−64.0| |1800|0.545|177.1|1.774|55.9|0.152|42.5|0.382|−67.8| |2000|0.547|170.9|1.614|50.9|0.163|44.7|0.381|−72.1| ## **ORDERING INFORMATION** |**ORDERING INFORMATION**|||| |---|---|---|---| |**Device**|**Marking**|**Package**|**Shipping**†| |NSVF5488SKT3G|LN|SOT−623 / SSFP
(Pb−Free / Halogen Free)|8,000 / Tape & Reel| †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D **www.onsemi.com** **5** MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** **==> picture [278 x 39] intentionally omitted <==** **----- Start of picture text -----**
SOT−623 / SSFP
CASE 631AC
ISSUE O
DATE 29 FEB 2012
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## **DOCUMENT NUMBER: 98AON67431E** **DESCRIPTION: SOT−623 / SSFP** Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. **PAGE 1 OF 1** ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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