# Bipolar - RF Transistor, NPN, 12 V, 10 GHz, 450 mW, 100 mA, SC-82FL ![Product image](https://novapart.co/image/farnell:2895760RL/) **URL**: https://novapart.co/products/NSVF4015SG4T1G/bipolar-rf-transistor-npn-12-v-10-ghz-450-mw-100 **SKU**: NSVF4015SG4T1G **Manufacturer**: ONSEMI **Category**: Semiconductors - Discretes || Transistors || Bipolar Transistors || Bipolar RF Transistors **Price**: €0.1560 **Stock**: 1000+ **Lead Time**: 2 days (indicative) ## Description Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:12V; Transition Frequency ft:10GHz; Power Dissipation Pd:450mW; DC Collector Current:100mA; DC Current Gain hFE:150hFE; R ## Specifications | Parameter | Value | |---|---| | Msl | MSL 1 - Unlimited | | Svhc | No SVHC (25-Jun-2025) | | No. Of Pins | 4Pins | | Product Range | - | | Qualification | AEC-Q101 | | Power Dissipation | 450mW | | Transistor Mounting | Surface Mount | | Transistor Polarity | NPN | | Transition Frequency | 10GHz | | Transistor Case Style | SC-82FL | | Dc Current Gain Hfe Min | 150hFE | | Operating Temperature Max | 150°C | | Continuous Collector Current | 100mA | | Collector Emitter Voltage Max | 12V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:2895760RL/) ## NSVF4017SG4 ## RF Transistor for Low Noise Amplifier ## **12 V, 100 mA, fT = 10 GHz typ.** This RF transistor is designed for low noise amplifier applications. MCPH package is suitable for use under high temperature environment because it has superior heat radiation characteristics. This RF transistor is AEC−Q101 qualified and PPAP capable for automotive applications. ## **Features** - Low−noise Use: NF = 1.2 dB typ. (f = 1 GHz) - High Cut−off Frequency: fT = 10 GHz typ. (VCE = 5 V) - High Gain: |S21e|[2] = 17 dB typ. (f = 1 GHz) **www.onsemi.com** **==> picture [50 x 42] intentionally omitted <==** **----- Start of picture text -----**
1
SC−82FL
MCPH4
CASE 419AR
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- MCPH4 Package is Pin−compatible with SC−82FL - AEC−Q101 Qualified and PPAP Capable - These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant ## **Typical Applications** - Low Noise Amplifier for Digital Radio - Low Noise Amplifier for TV - Low Noise Amplifier for FM Radio - RF Amplifier for UHF Application **==> picture [122 x 19] intentionally omitted <==** **----- Start of picture text -----**
ELECTRICAL CONNECTION
NPN
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**==> picture [127 x 97] intentionally omitted <==** **----- Start of picture text -----**
2
1: Emitter
2: Collector
4
3: Emitter
4: Base
1, 3
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## **MAXIMUM RATINGS** at TA = 25 ° C |**MAXIMUM RATINGS**at TA = 25A = 25= 25°C|||| |---|---|---|---| |**Rating**|**Symbol**|**Value**|**Unit**| |Collector to Base Voltage|VCBO|20|V| |Collector to Emitter Voltage|VCEO|12|V| |Emitter to Base Voltage|VEBO|2|V| |Collector Current|IC|100|mA| |Collector Dissipation|PC|450|mW| |Operating Junction and Storage Temper-
ature|TJ, Tstg|−55 to
+150|°C| Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ## **MARKING DIAGRAM** **==> picture [116 x 61] intentionally omitted <==** **----- Start of picture text -----**
GQ
GQ = Specific Device Code
XX = Lot Number
LOT No. LOT No.
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## **ORDERING INFORMATION** |**Device**
**Package**|**Shipping**†| |---|---| |NSVF4015SG4T1G
SC−82FL|3000 / Tape &| |(Pb−Free)|Reel| |†For information on tape and reel specifications,|| |including part orientation and tape sizes, please|| |refer to our Tape and Reel Packaging Specification|| |Brochure, BRD8011/D.|| Publication Order Number: **NSFV4017SG4/D** **1** © Semiconductor Components Industries, LLC, 2017 **March, 2018 − Rev. 0** **NSVF4017SG4** **Table 1. ELECTRICAL CHARACTERISTICS** at TA = 25 ° C (Note 1) |**Parameter**|**Symbol**|**Conditions**||**Value**||**Unit**| |---|---|---|---|---|---|---| ||||**Min**|**Typ**|**Max**|| |Collector Cutoff Current|ICBO|VCB= 5 V, IE=0A|||1.0|�A| |Emitter Cutoff Current|IEBO|VEB= 1 V, IC=0A|||1.0|�A| |DC Current Gain|hFE|VCE= 5 V, IC= 50mA|60||150|| |Gain−Bandwidth Product|fT|VCE= 5 V, IC= 30mA|8|10||GHz| |Forward Transfer Gain|| S21e |2|VCE= 5 V, IC= 30mA, f=1 GHz|14|17||dB| |Noise Figure|NF|VCE= 5 V, IC= 10 mA, f=1 GHz||1.2|1.8|dB| Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pay attention to handling since it is liable to be affected by static electricity due to the high−frequency process adopted. **www.onsemi.com** **2** **NSVF4017SG4** ## **TYPICAL CHARACTERISTICS** **==> picture [219 x 600] intentionally omitted <==** **----- Start of picture text -----**
100
1000 �A
90 900 �A
800 �A
80 700�A
70 600 �A
60 500�A
400 A�
50
300 A�
40
30 200�A
20
100�A
10
0 IB =0 A�
0 2 4 6 8 10 12
Collector−to−Emitter Voltage, VCE − V
Figure 1. IC vs. VCE
1000
VCE=5V
7
5
3
2
100
7
5
3
2
10
1.0 2 3 5 7 10 2 3 5 7 100
Collector Current, IC − mA
Figure 3. hFE vs. IC
1.0
f=1MHz
7
5
3
2
0.1
0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 100
Collector−to−Base Voltage, VCB −V
Collector Current, IC − mA
DC Current Gain, hFE
Reverse Transfer Capacitance, Cre − pF
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**Figure 5. Cre vs. VCB** **==> picture [218 x 601] intentionally omitted <==** **----- Start of picture text -----**
100
VCE=5V
90
80
70
60
50
40
30
20
10
0
0 0.2 0.4 0.6 0.8 1.0
Base−to−Emitter Voltage, VBE − V
Figure 2. IC vs. VBE
10
f=1MHz
7
5
3
2
1.0
7
5
3
2
0.1
0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 100
Collector−to−Base Voltage, VCB −V
Figure 4. Cob vs. VCB
100
VCE=5V
7 f=1GHz
5
3
2
10
7
5
3
2
1.0
1.0 2 3 5 7 10 2 3 5 7 100
Collector Current, IC − mA
Collector Current, IC − mA
Output Capacitance, Cob − pF
Gain−Bandwidth Product, fT −− GHz
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**Figure 6. fT vs. IC** **www.onsemi.com** **3** **NSVF4017SG4** ## **TYPICAL CHARACTERISTICS** **==> picture [219 x 388] intentionally omitted <==** **----- Start of picture text -----**
25
VCE=5V
f=1GHz
20
15
10
5
0
1.0 2 3 5 7 10 2 3 5 7 100
Collector Current, IC − mA
Figure 7. � S21e � [2] vs. IC
500
450
400
350
300
250
200
150
100
50
0
0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta − �C
��Forward Transfer Gain, − dBS21e2
Collector Dissipation, PC − mW
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10
VCE=5V
9 f=1GHz
8
7
6
5
4
3
Zs=50 �
2
1 Zs=Zsopt
0
1.0 2 3 5 7 10 2 3 5 7 100
Collector Current, IC − mA
−dB
Noise Figure, NF
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**Figure 8. NF vs. IC** **Figure 9. PC vs. TA** **www.onsemi.com** **4** **NSVF4017SG4** **www.onsemi.com** **5** **NSVF4017SG4** **www.onsemi.com** **6** **NSVF4017SG4** **www.onsemi.com** **7** **NSVF4017SG4** **www.onsemi.com** **8** **NSVF4017SG4** **www.onsemi.com** **9** **NSVF4017SG4** **www.onsemi.com** **10** MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** **SC−82FL / MCPH4** CASE 419AR ISSUE O DATE 30 DEC 2011 **DOCUMENT NUMBER: 98AON65645E** Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed **STATUS: ON SEMICONDUCTOR STANDARD** versions are uncontrolled except when stamped “CONTROLLED COPY” in red. ~~**NEW STANDARD:**~~ © Semiconductor Components Industries, LLC, 2002 **http://onsemi.com** Case Outline Number: **October, 2002 − Rev. 0DESCRIPTION: SC−82FL / MCPH4 1 PAGE 1 OF 2XXX** |~~— ©~~|~~— ©~~|**DOCUMENT NUMBER:**
**98AON65645E**
**PAGE 2 OF 2**
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**DATE**| |O|RELEASED FOR PRODUCTION FROM SANYO TO ON SEMICONDUCTOR. REQ.|RELEASED FOR PRODUCTION FROM SANYO TO ON SEMICONDUCTOR. REQ.
30 DEC 2011| ||BY D. TRUHITTE.|| **ON Semiconductor** and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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