# Bipolar Transistor Array, Dual NPN, 40 V, 600 mA, 150 mW ![Product image](https://novapart.co/image/farnell:3617491/) **URL**: https://novapart.co/products/NSVBT2222ADW1T1G/bipolar-transistor-array-dual-npn-40-v-600-ma-150 **SKU**: NSVBT2222ADW1T1G **Manufacturer**: ONSEMI **Category**: Semiconductors - Discretes || Transistors || Bipolar Transistors || Bipolar Junction Transistor Arrays - BJT **Price**: €0.0390 **Stock**: 10+ **Lead Time**: 92 days (indicative) ## Specifications | Parameter | Value | |---|---| | Msl | MSL 1 - Unlimited | | Svhc | No SVHC (25-Jun-2025) | | No. Of Pins | 6Pins | | Product Range | - | | Qualification | AEC-Q101 | | Transistor Mounting | Surface Mount | | Transistor Polarity | Dual NPN | | Power Dissipation Npn | 150mW | | Power Dissipation Pnp | - | | Transistor Case Style | SOT-363 | | Transition Frequency Npn | 300MHz | | Transition Frequency Pnp | - | | Operating Temperature Max | 150°C | | Dc Current Gain Hfe Min Npn | 100hFE | | Dc Current Gain Hfe Min Pnp | - | | Continuous Collector Current Npn | 600mA | | Continuous Collector Current Pnp | - | | Collector Emitter Voltage Max Npn | 40V | | Collector Emitter Voltage Max Pnp | - | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:3617491/) **Share Feedback DATA SHEET** Your Opinion Matters **www.onsemi.com** ~~ee~~ ## General Purpose Transistor ## MBT2222ADW1, NSVBT2222ADW1 **NPN Silicon** ## **Features** - Moisture Sensitivity Level: 1 - NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable - These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 1 ## **SC−88/SC70−6/SOT−363 CASE 419B STYLE 1** **==> picture [122 x 78] intentionally omitted <==** **----- Start of picture text -----**
(3) (2) (1)
Q1 Q2
(4) (5) (6)
**----- End of picture text -----**
## **MARKING DIAGRAM** **MAXIMUM RATINGS** **Rating Symbol Value Unit** Collector−Emitter Voltage VCEO 40 Vdc Collector−Base Voltage VCBO 75 Vdc Emitter−Base Voltage VEBO 6.0 Vdc Collector Current − Continuous IC 600 mAdc Electrostatic Discharge ESD HBM Class 2 MM Class B ~~===~~ **THERMAL CHARACTERISTICS** ~~ee~~ **Characteristic Symbol** ~~es~~ **Max** ~~ee~~ **Unit** Total Package Dissipation (Note 1), PD 150 mW TA = 25C ~~es~~ Thermal Resistance, R ~~ee~~ JA 833 C/W Junction−to−Ambient ~~ee ee~~ Junction and Storage Temperature T ~~ee~~ J ~~es~~ , Tstg ~~ee~~ −55 to +150 C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Device mounted on FR4 glass epoxy printed circuit board using the minimum recommended footprint. **==> picture [144 x 109] intentionally omitted <==** **----- Start of picture text -----**
6
1P M
1
1P = Specific Device Code
M = Date Code
= Pb−Free Package
(Note: Microdot may be in either location)
**----- End of picture text -----**
## **ORDERING INFORMATION** |**Device**|**Package**|**Shipping**†| |---|---|---| |MBT2222ADW1T1G
(Pb−Free)|SOT−363
(Pb−Free)|3000 /
Tape & Reel| |NSVBT2222ADW1T1G
(Pb−Free)|SOT−363
(Pb−Free)|3000 /
Tape & Reel| †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: **MBT2222ADW1T1/D** **1**  Semiconductor Components Industries, LLC, 2013 **November, 2024 − Rev. 6** ## **MBT2222ADW1, NSVBT2222ADW1** **ELECTRICAL CHARACTERISTICS** (TA = 25C unless otherwise noted) |**Characteristic**
**Symbol**
**Min**
**Max**
**Unit**
**OFF CHARACTERISTICS**
~~ee~~| |---| |Collector−Emitter Breakdown Voltage
(IC= 10 mAdc, IB= 0)
V(BR)CEO
40
−
Vdc
~~a~~| |Collector−Base Breakdown Voltage
(IC= 10 Adc, IE= 0)
V(BR)CBO
75
−
Vdc
~~a~~| |Emitter−Base Breakdown Voltage,
(IE= 10 Adc, IC= 0)
V(BR)EBO
6.0
−
Vdc
~~a~~| |Collector Cutoff Current
(VCE= 60 Vdc, VEB(off)= 3.0 Vdc)
ICEX
−
10
nAdc
Collector Cutoff Current
ICBO
Adc
~~a~~| |(VCB= 60 Vdc, IE= 0)
−
0.01| |(VCB= 60 Vdc, IE= 0, TA= 125C)
−
10| |Emitter Cutoff Current
(VEB= 3.0 Vdc, IC= 0)
IEBO
−
100
nAdc| |Base Cutoff Current
(VCE= 60 Vdc, VEB(off)= 3.0 Vdc)
IBL
−
20
nAdc
~~a~~| |**ON CHARACTERISTICS**| |DC Current Gain
hFE
−| |(IC= 0.1 mAdc, VCE= 10 Vdc)
35
−| |(IC= 1.0 mAdc, VCE= 10 Vdc)
50
−| |(IC= 10 mAdc, VCE= 10 Vdc)
75
−| |(IC= 10 mAdc, VCE= 10 Vdc, TA= −55C)
35
−| |(IC= 150 mAdc, VCE= 10 Vdc) (Note 2)
100
300| |(IC= 150 mAdc, VCE= 1.0 Vdc) (Note 2)
50
−| |(IC= 500 mAdc, VCE= 10 Vdc) (Note 2)
40
−| |Collector−Emitter Saturation Voltage (Note 2)
VCE(sat)
Vdc| |(IC= 150 mAdc, IB= 15 mAdc)
−
0.3| |(IC= 500 mAdc, IB= 50 mAdc)
−
1.0| |Base−Emitter Saturation Voltage (Note 2)
VBE(sat)
Vdc| |(IC= 150 mAdc, IB= 15 mAdc)
0.6
1.2| |(IC= 500 mAdc, IB= 50 mAdc)
−
2.0| |**SMALL−SIGNAL CHARACTERISTICS**| |Current−Gain − Bandwidth Product (Note 3)
(IC= 20 mAdc, VCE= 20 Vdc, f = 100 MHz)
fT
300
−
MHz
~~ee~~| |Output Capacitance
(VCB= 10 Vdc, IE= 0, f = 1.0 MHz)
Cobo
−
8.0
pF
~~a~~| |Input Capacitance
(VEB= 0.5 Vdc, IC= 0, f = 1.0 MHz)
Cibo
−
25
pF
Input Impedance
(IC= 1.0 mAdc, VCE= 10 Vdc, f = 1.0 kHz)
(IC= 10 mAdc, VCE= 10 Vdc, f = 1.0 kHz)
hie
2.0
0.25
8.0
1.25
k
Voltage Feedback Ratio
(IC= 1.0 mAdc, VCE= 10 Vdc, f = 1.0 kHz)
(IC= 10 mAdc, VCE= 10 Vdc, f = 1.0 kHz)
hre
−
−
8.0
4.0
X 10−4
Small−Signal Current Gain
(IC= 1.0 mAdc, VCE= 10 Vdc, f = 1.0 kHz)
(IC= 10 mAdc, VCE= 10 Vdc, f = 1.0 kHz)
hfe
50
75
300
375
−
Output Admittance
(IC= 1.0 mAdc, VCE= 10 Vdc, f = 1.0 kHz)
(IC= 10 mAdc, VCE= 10 Vdc, f = 1.0 kHz)
hoe
5.0
25
35
200
mhos
Collector Base Time Constant
(IE= 20 mAdc, VCB= 20 Vdc, f = 31.8 MHz)
rb, Cc
−
150
ps
Noise Figure
(IC= 100 Adc, VCE= 10 Vdc, RS= 1.0 k
f = 1.0 kHz)
NF
−
4.0
dB
**SWITCHING CHARACTERISTICS**
~~i~~
~~ee~~
~~ee~~
~~ee~~
~~ee ee~~
~~po~~
~~ee~~
~~ee ee~~
~~a~~
~~a~~| |Delay Time
(VCC= 30 Vdc, VBE(off)= −0.5 Vdc,
IC= 150 mAdc, IB1= 15 mAdc)
td
−
10
ns
Rise Time
tr
−
25| |Storage Time
(VCC= 30 Vdc, IC= 150 mAdc,
IB1= IB2= 15 mAdc)
ts
−
225
ns
Fall Time
tf
−
60| 2. Pulse Test: Pulse Width  300 s, Duty Cycle  2.0%. 3. fT is defined as the frequency at which |hfe| extrapolates to unity. **http://onsemi.com** **Share Feedback** Your Opinion Matters **2** **MBT2222ADW1, NSVBT2222ADW1** ## **SWITCHING TIME EQUIVALENT TEST CIRCUITS** **==> picture [477 x 95] intentionally omitted <==** **----- Start of picture text -----**
e l bee 1.0 to 100 s, \ 200 s a ke 1.0 to 100 s, m 200
+16 V DUTY CYCLE  2.0% +16 V DUTY CYCLE  2.0%
0 0
< 2 ns 1 k CS* < 10 pF -14 V < 20 ns 1 k CS* < 10 pF
1N914
= Scope rise time < 4 ns -4V =
*Total shunt capacitance of test jig, connectors, and oscilloscope.
**----- End of picture text -----**
**Figure 1. Turn−On Time** **Figure 2. Turn−Off Time** **==> picture [485 x 382] intentionally omitted <==** **----- Start of picture text -----**
1000 ee
700
500 TJ = 125  C
Pea ee ee eee ee eeee ee ee eee ee
300
ee
200 | eer TT | dt emer tees tT
25  C
100 Peeaes | | |Pesatte e t HT
a a a a a a a a a eh a ns eee ee e ee
70 -55  C
50
eeSST Tr OO teOS
30 es ee V CE = 1.0 V eeee
20 P|a tTeeoTee TT ee V CE = 10 V eeeeeee
10 Pot tT TE TYTT
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 300 500 700 1.0
IC, COLLECTOR CURRENT (mA) k
Figure 3. DC Current Gain
1.0
TJ = 25  C
0.8 eePTWEEETEee eee4
0.6 ae|| IC = 1.0 mA 10 mA ee 150 mA eee 500 mA
Fo REEEA HHA
ail aa Pt iy Tyan LE P|
0.4 PITT TE EE TE A AEE
UT PP EAT PE NE NE
0.2
PINE TTT TN TE TT AEE EE PSR RR
INP} TE PN ET PET
0 PU Pe RH} EeTE
0.005 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50
IB, BASE CURRENT (mA)
hFE, DC CURRENT GAIN
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
**----- End of picture text -----**
**Figure 4. Collector Saturation Region** + **http://onsemi.com** **Share Feedback** Your Opinion Matters **3** **MBT2222ADW1, NSVBT2222ADW1** **==> picture [490 x 171] intentionally omitted <==** **----- Start of picture text -----**
1.0 +0.5
TJ = 25  C
0.8 ee UUMCICCMICPe CMe)a lll «= 0 PTIERC TUTE TET R VC for V TTEt TTA CE(sat)
VBE(sat) @ IC/IB = 10 IC rece rT|III CCCI
1.0 V
0.6 meepcre [i | il eeSPECI CLL ooCO T
VBE(on) @ VCE = 10 V TMT jo LOI no
0.4 eer CCA AMIE
ALT CECA EE En er
UI T = ARTE TRE Lebar
0.2
PCE PTT EE FETIP MT R VB re for VBE
VCE(sat) @ IC/IB = 10 A ao°CCOHNDCMTLC
UE TT
0 ere IT I gsLCI
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0 k 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)

V, VOLTAGE (VOLTS)
COEFFICIENT (mV/ C)
**----- End of picture text -----**
**Figure 5. “On” Voltages** **Figure 6. Temperature Coefficients** **http://onsemi.com** **Share Feedback** Your Opinion Matters **4** MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** ## **SC−88 2.00x1.25x0.90, 0.65P** CASE 419B−02 ISSUE Z ## DATE 18 APR 2024 **==> picture [164 x 154] intentionally omitted <==** **----- Start of picture text -----**
GENERIC
MARKING DIAGRAM*
6
io o
XXXM
1 UU U
XXX = Specific Device Code
M = Date Code*
: = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or position may
vary depending upon manufacturing location.
**----- End of picture text -----**
*This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ : ”, may or may not be present. Some products may not follow the Generic Marking. ## **STYLES ON PAGE 2** Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. **==> picture [169 x 8] intentionally omitted <==** **----- Start of picture text -----**
DOCUMENT NUMBER: 98ASB42985B
**----- End of picture text -----**
## **SC−88 2.00x1.25x0.90, 0.65P** ## **PAGE 1 OF 2** ## ## **DESCRIPTION:** **onsemi** and are trademarks of Semiconductor Components Industries, LLC dba onsemi. **onsemi** or its subsidiaries in the United States and/or other countries. **onsemi** reserves the right to make changes without further notice to any products herein. **onsemi** makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. **onsemi** does not convey any license under its patent rights nor the rights of others. www.onsemi.com  Semiconductor Components Industries, LLC, 2019 ## **SC−88 2.00x1.25x0.90, 0.65P** CASE 419B−02 ISSUE Z ## DATE 18 APR 2024 |STYLE 1:|STYLE 2:|STYLE 3:|STYLE 4:|STYLE 5:|STYLE 6:| |---|---|---|---|---|---| |PIN 1. EMITTER 2|CANCELLED|CANCELLED|PIN 1. CATHODE|PIN 1. ANODE|PIN 1. ANODE 2| |2. BASE 2|||2. CATHODE|2. ANODE|2. N/C| |3. COLLECTOR 1|||3. COLLECTOR|3. COLLECTOR|3. CATHODE 1| |4. EMITTER 1|||4. EMITTER|4. EMITTER|4. ANODE 1| |5. BASE 1|||5. BASE|5. BASE|5. N/C| |6. COLLECTOR 2|||6. ANODE|6. CATHODE|6. CATHODE 2| |STYLE 7:|STYLE 8:|STYLE 9:|STYLE 10:|STYLE 11:|STYLE 12:| |PIN 1. SOURCE 2|CANCELLED|PIN 1. EMITTER 2|PIN 1. SOURCE 2|PIN 1. CATHODE 2|PIN 1. ANODE 2| |2. DRAIN 2||2. EMITTER 1|2. SOURCE 1|2. CATHODE 2|2. ANODE 2| |3. GATE 1||3. COLLECTOR 1|3. GATE 1|3. ANODE 1|3. CATHODE 1| |4. SOURCE 1||4. BASE 1|4. DRAIN 1|4. CATHODE 1|4. ANODE 1| |5. DRAIN 1||5. BASE 2|5. DRAIN 2|5. CATHODE 1|5. ANODE 1| |6. GATE 2||6. COLLECTOR 2|6. GATE 2|6. ANODE 2|6. CATHODE 2| |STYLE 13:|STYLE 14:|STYLE 15:|STYLE 16:|STYLE 17:|STYLE 18:| |PIN 1. ANODE|PIN 1. VREF|PIN 1. ANODE 1|PIN 1. BASE 1|PIN 1. BASE 1|PIN 1. VIN1| |2. N/C|2. GND|2. ANODE 2|2. EMITTER 2|2. EMITTER 1|2. VCC| |3. COLLECTOR|3. GND|3. ANODE 3|3. COLLECTOR 2|3. COLLECTOR 2|3. VOUT2| |4. EMITTER|4. IOUT|4. CATHODE 3|4. BASE 2|4. BASE 2|4. VIN2| |5. BASE|5. VEN|5. CATHODE 2|5. EMITTER 1|5. EMITTER 2|5. GND| |6. CATHODE|6. VCC|6. CATHODE 1|6. COLLECTOR 1|6. COLLECTOR 1|6. VOUT1| |STYLE 19:|STYLE 20:|STYLE 21:|STYLE 22:|STYLE 23:|STYLE 24:| |PIN 1. I OUT|PIN 1. COLLECTOR|PIN 1. ANODE 1|PIN 1. D1 (i)|PIN 1. Vn|PIN 1. CATHODE| |2. GND|2. COLLECTOR|2. N/C|2. GND|2. CH1|2. ANODE| |3. GND|3. BASE|3. ANODE 2|3. D2 (i)|3. Vp|3. CATHODE| |4. V CC|4. EMITTER|4. CATHODE 2|4. D2 (c)|4. N/C|4. CATHODE| |5. V EN|5. COLLECTOR|5. N/C|5. VBUS|5. CH2|5. CATHODE| |6. V REF|6. COLLECTOR|6. CATHODE 1|6. D1 (c)|6. N/C|6. CATHODE| |STYLE 25:|STYLE 26:|STYLE 27:|STYLE 28:|STYLE 29:|STYLE 30:| |PIN 1. BASE 1|PIN 1. SOURCE 1|PIN 1. BASE 2|PIN 1. DRAIN|PIN 1. ANODE|PIN 1. SOURCE 1| |2. CATHODE|2. GATE 1|2. BASE 1|2. DRAIN|2. ANODE|2. DRAIN 2| |3. COLLECTOR 2|3. DRAIN 2|3. COLLECTOR 1|3. GATE|3. COLLECTOR|3. DRAIN 2| |4. BASE 2|4. SOURCE 2|4. EMITTER 1|4. SOURCE|4. EMITTER|4. SOURCE 2| |5. EMITTER|5. GATE 2|5. EMITTER 2|5. DRAIN|5. BASE/ANODE|5. GATE 1| |6. COLLECTOR 1|6. DRAIN 1|6. COLLECTOR 2|6. DRAIN|6. CATHODE|6. DRAIN 1| Note: Please refer to datasheet for style callout. If style type is not called out in the datasheet refer to the device datasheet pinout or pin assignment. **==> picture [492 x 37] intentionally omitted <==** **----- Start of picture text -----**
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
DOCUMENT NUMBER: 98ASB42985B Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DESCRIPTION: SC−88 2.00x1.25x0.90, 0.65P PAGE 2 OF 2
**----- End of picture text -----**
**onsemi** and are trademarks of Semiconductor Components Industries, LLC dba **onsemi** or its subsidiaries in the United States and/or other countries. **onsemi** reserves the right to make changes without further notice to any products herein. **onsemi** makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. **onsemi** does not convey any license under its patent rights nor the rights of others. **www.onsemi.com** ~~**2**~~ www.onsemi.com  Semiconductor Components Industries, LLC, 2019 **onsemi** , , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “ **onsemi** ” or its affiliates and/or subsidiaries in the United States and/or other countries. **onsemi** owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. 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