# Bipolar (BJT) Single Transistor, NPN, 30 V, 100 mA, 300 mW, SOT-23, Surface Mount ![Product image](https://novapart.co/image/farnell:3368653/) **URL**: https://novapart.co/products/NSVBC848CLT1G/bipolar-bjt-single-transistor-npn-30-v-100-ma-300 **SKU**: NSVBC848CLT1G **Manufacturer**: ONSEMI **Category**: Semiconductors - Discretes || Transistors || Bipolar Transistors || Single Bipolar Junction Transistors - BJT **Price**: €0.0230 **Stock**: 1000+ **Lead Time**: 2 days (indicative) ## Specifications | Parameter | Value | |---|---| | Msl | MSL 1 - Unlimited | | Svhc | No SVHC (25-Jun-2025) | | No. Of Pins | 3Pins | | Product Range | BC846 | | Qualification | AEC-Q101 | | Power Dissipation | 300mW | | Transistor Mounting | Surface Mount | | Transistor Polarity | NPN | | Transition Frequency | 100MHz | | Transistor Case Style | SOT-23 | | Dc Current Gain Hfe Min | 420hFE | | Operating Temperature Max | 150°C | | Continuous Collector Current | 100mA | | Collector Emitter Voltage Max | 30V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:3368653/) ## General Purpose Transistors **NPN Silicon** ## BC846ALT1G Series ## **Features** - Moisture Sensitivity Level: 1 - ESD Rating − Human Body Model: > 4000 V ESD Rating − Machine Model: > 400 V - S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable - These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant **www.onsemi.com** **==> picture [80 x 71] intentionally omitted <==** **----- Start of picture text -----**
COLLECTOR
3
1
BASE
2
EMITTER
**----- End of picture text -----**
**MAXIMUM RATINGS** **Rating Symbol Value Unit** 3 Collector-Emitter Voltage VCEO Vdc BC846 65 1 BC847, BC850 45 2 BC848, BC849 30 **SOT−23** Collector−Base Voltage VCBO Vdc **CASE 318** BC846 80 **STYLE 6** BC847, BC850 50 BC848, BC849 30 Emitter−Base Voltage VEBO Vdc **MARKING DIAGRAM** BC846 6.0 BC847, BC850 6.0 BC848, BC849 5.0 XX M Collector Current − Continuous IC 100 mAdc 1 ol Stresses exceeding those listed in the Maximum Ratings table may damage the ~~Ht :~~ device. If any of these limits are exceeded, device functionality should not be XX = Device Code assumed, damage may occur and reliability may be affected. M = Date Code* **THERMAL CHARACTERISTICS** | = Pb−Free Package ## **THERMAL CHARACTERISTICS** (Note: Microdot may be in either location) **Characteristic Symbol Max Unit** ~~ee ee~~ Total Device Dissipation FR−5 Board, PD 225 mW (Note 1) TA = 25 ° C Derate above 25 ° C 1.8 mW/ ° C ~~PT~~ Thermal Resistance, R JA 556 ° C/W Junction−to−Ambient (Note 1) ~~ee~~ Total Device Dissipation ~~cee~~ PD 300 mW Alumina Substrate (Note 2) TA = 25 ° C Derate above 25 ° C 2.4 mW/ ° C ~~PT~~ Thermal Resistance, R JA 417 ° C/W Junction−to−Ambient (Note 2) ~~ee~~ Junction and Storage T ~~coe~~ J, Tstg −55 to ~~a~~ ° C Temperature Range +150 1. FR−5 = 1.0 0.75 0.062 in. 2. ~~rr~~ Alumina = 0.4 0.3 0.024 in 99.5% alumina. *Date Code orientation and/or overbar may vary depending upon manufacturing location. ## **ORDERING INFORMATION** See detailed ordering and shipping information in the package dimensions section on page 12 of this data sheet. Publication Order Number: **BC846ALT1/D** **1** © Semiconductor Components Industries, LLC, 1994 **December, 2019 − Rev. 18** **BC846ALT1G Series** ## **ELECTRICAL CHARACTERISTICS** (TA = 25 ° C unless otherwise noted) |**ELECTRICAL CHARACTERISTICS**(TA= 25°C unless otherwise noted)|||||| |---|---|---|---|---|---| |**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**| |**OFF CHARACTERISTICS**|||||| |Collector−Emitter Breakdown Voltage
BC846A, B, C
(IC= 10 mA)
BC847A, B, C, BC850B, C
BC848A, B, C, BC849B, C|V(BR)CEO|65
45
30|−
−
−|−
−
−|V| |Collector−Emitter Breakdown Voltage
BC846A, B, C
(IC= 10�A, VEB= 0)
BC847A, B, C BC850B, C
BC848A, B, C, BC849B, C|V(BR)CES|80
50
30|−
−
−|−
−
−|V| |Collector−Base Breakdown Voltage
BC846A, B, C
(IC= 10�A)
BC847A, B, C, BC850B, C
BC848A, B, C, BC849B, C|V(BR)CBO|80
50
30|−
−
−|−
−
−|V| |Emitter−Base Breakdown Voltage
BC846A, B, C
(IE= 1.0�A)
BC847A, B, C, BC850B, C
BC848A, B, C, BC849B, C|V(BR)EBO|6.0
6.0
5.0|−
−
−|−
−
−|V| |Collector Cutoff Current (VCB= 30 V)
(VCB= 30 V, TA= 150°C)|ICBO|−
−|−
−|15
5.0|nA
�A| |**ON CHARACTERISTICS**|||||| |DC Current Gain
BC846A, BC847A, BC848A
(IC= 10�A, VCE= 5.0 V)
BC846B, BC847B, BC848B
BC846C, BC847C, BC848C
(IC= 2.0 mA, VCE= 5.0 V)
BC846A, BC847A, BC848A
BC846B, BC847B, BC848B,
BC849B, BC850B
BC846C, BC847C, BC848C, BC849C, BC850C|hFE|−
−
−
110
200
420|90
150
270
180
290
520|−
−
−
220
450
800|−| |Collector−Emitter Saturation Voltage (IC= 10 mA, IB= 0.5 mA)
Collector−Emitter Saturation Voltage(IC= 100 mA, IB= 5.0 mA)|VCE(sat)|−
−|−
−|0.25
0.6|V| |Base−Emitter Saturation Voltage (IC= 10 mA, IB= 0.5 mA)
Base−Emitter Saturation Voltage(IC= 100 mA, IB= 5.0 mA)|VBE(sat)|−
−|0.7
0.9|−
−|V| |Base−Emitter Voltage (IC= 2.0 mA, VCE= 5.0 V)
Base−Emitter Voltage(IC= 10 mA, VCE= 5.0 V)|VBE(on)|580
−|660
−|700
770|mV| |**SMALL−SIGNAL CHARACTERISTICS**|||||| |Current−Gain − Bandwidth Product
(IC= 10 mA, VCE= 5.0 Vdc, f = 100 MHz)|fT|100|−|−|MHz| |Output Capacitance (VCB= 10 V, f = 1.0 MHz)|Cobo|−|−|4.5|pF| |Noise Figure (IC= 0.2 mA,
VCE= 5.0 Vdc, RS= 2.0 k�,
BC846A,B,C, BC847A,B,C, BC848A,B,C
f = 1.0 kHz, BW = 200 Hz)
BC849B,C, BC850B,C|NF|−
−|−
−|10
4.0|dB| Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. **www.onsemi.com** **2** **BC846ALT1G Series** ## **BC846A, BC847A, BC848A, SBC846A** **==> picture [492 x 596] intentionally omitted <==** **----- Start of picture text -----**
300 300
150 ° C VCE = 1 V 150 ° C VCE = 5 V
200 200
25 ° C 25 ° C
100 −55 ° C 100 −55 ° C
0 0
0.001 0.01 0.1 1 0.001 0.01 0.1 1
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
Figure 1. DC Current Gain vs. Collector Figure 2. DC Current Gain vs. Collector
Current Current
0.18
0.16 IC/IB = 20 150 ° C
0.14
0.12 25 ° C
0.10
0.08
0.06 −55 ° C
0.04
0.02
0
0.0001 0.001 0.01 0.1
IC, COLLECTOR CURRENT (A)
Figure 3. Collector Emitter Saturation Voltage
vs. Collector Current
1.0 1.2
0.9 IC/IB = 20 −55 ° C 1.1 VCE = 5 V
1.0
0.8 25 ° C 0.9 −55 ° C
0.7 0.8 25 ° C
0.6 150 ° C 0.7
0.6
0.5 150 ° C
0.5
0.4
0.4
0.3 0.3
0.2 0.2
0.0001 0.001 0.01 0.1 0.0001 0.001 0.01 0.1
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
, DC CURRENT GAIN , DC CURRENT GAIN
FE FE
h h
, COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
CE(sat)
V
, BASE−EMITTER
BE(sat)
V , BASE−EMITTER VOLTAGE (V)
SATURATION VOLTAGE (V)
BE(on)
V
**----- End of picture text -----**
**Figure 4. Base Emitter Saturation Voltage vs. Collector Current** **Figure 5. Base Emitter Voltage vs. Collector Current** **www.onsemi.com** **3** **BC846ALT1G Series** ## **BC846A, BC847A, BC848A, SBC846A** **==> picture [487 x 384] intentionally omitted <==** **----- Start of picture text -----**
2.0 1.0
TA = 25°C -55°C to +125°C
1.2
1.6
IC = 200 mA 1.6
1.2
IC = IC = IC = 50 mA IC = 100 mA
2.0
10 mA 20 mA
0.8
2.4
0.4
2.8
0
0.02 0.1 1.0 10 20 0.2 1.0 10 100
IB, BASE CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Figure 6. Collector Saturation Region Figure 7. Base−Emitter Temperature Coefficient
10 400
300
7.0 T A = 25°C
200
5.0 C ib
3.0 10080 VTACE = 25 = 10 V°C
Cob
60
2.0
40
30
1.0 20
0.4 0.6 0.8 1.0 2.0 4.0 6.0 8.0 10 20 40 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50
VR, REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mAdc)
C)°
VCE, COLLECTOR-EMITTER VOLTAGE (V) VB, TEMPERATURE COEFFICIENT (mV/
θ
C, CAPACITANCE (pF)
f�, CURRENT-GAIN - BANDWIDTH PRODUCT (MHz)T
**----- End of picture text -----**
**Figure 8. Capacitances** **Figure 9. Current−Gain − Bandwidth Product** **www.onsemi.com** **4** **BC846ALT1G Series** ## **BC846B, SBC846B** **==> picture [492 x 594] intentionally omitted <==** **----- Start of picture text -----**
600 600
150 ° C VCE = 1 V 150 ° C VCE = 5 V
500 500
400 400
25 ° C 25 ° C
300 300
200 −55 ° C 200 −55 ° C
100 100
0 0
0.001 0.01 0.1 1 0.001 0.01 0.1 1
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
Figure 10. DC Current Gain vs. Collector Figure 11. DC Current Gain vs. Collector
Current Current
0.30
IC/IB = 20 150 ° C
0.25
0.20
25 ° C
0.15
0.10
−55 ° C
0.05
0
0.0001 0.001 0.01 0.1
IC, COLLECTOR CURRENT (A)
Figure 12. Collector Emitter Saturation Voltage
vs. Collector Current
1.1 1.2
1.0 IC/IB = 20 −55 ° C 1.1 VCE = 5 V
1.0
0.9 25 ° C 0.9 −55 ° C
0.8
0.8
0.7 25 ° C
150 ° C 0.7
0.6
0.6 150 ° C
0.5
0.5
0.4 0.4
0.3 0.3
0.2 0.2
0.0001 0.001 0.01 0.1 0.0001 0.001 0.01 0.1
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
, DC CURRENT GAIN , DC CURRENT GAIN
FE FE
h h
, COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
CE(sat)
V
, BASE−EMITTER
BE(sat)
V , BASE−EMITTER VOLTAGE (V)
SATURATION VOLTAGE (V)
BE(on)
V
**----- End of picture text -----**
**Figure 13. Base Emitter Saturation Voltage vs. Collector Current** **Figure 14. Base Emitter Voltage vs. Collector Current** **www.onsemi.com** **5** **BC846ALT1G Series** ## **BC846B, SBC846B** **==> picture [484 x 390] intentionally omitted <==** **----- Start of picture text -----**
2.0 1.0
TA = 25°C
1.6 1.4
20 mA 50 mA 100 mA 200 mA
1.2 1.8
�VB for VBE
0.8 IC = 2.2 -55°C to 125°C
10 mA
0.4 2.6
0 3.0
0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200
IB, BASE CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Figure 15. Collector Saturation Region Figure 16. Base−Emitter Temperature Coefficient
40
TA = 25°C VCE = 5 V
500 °
TA = 25 C
20
Cib
200
10
100
6.0
50
4.0 Cob
20
2.0
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 1.0 5.0 10 50 100
VR, REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA)
C)°
VB, TEMPERATURE COEFFICIENT (mV/
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) θ
C, CAPACITANCE (pF)
f�, CURRENT-GAIN - BANDWIDTH PRODUCTT
**----- End of picture text -----**
**Figure 17. Capacitance** **Figure 18. Current−Gain − Bandwidth Product** **www.onsemi.com** **6** **BC846ALT1G Series** ## **BC847B, BC848B, BC849B, BC850B, SBC847B, SBC848B** **==> picture [489 x 173] intentionally omitted <==** **----- Start of picture text -----**
600 600
150 ° C VCE = 1 V 150 ° C VCE = 5 V
500 500
400 400
25 ° C 25 ° C
300 300
200 −55 ° C 200 −55 ° C
100 100
0 0
0.001 0.01 0.1 1 0.001 0.01 0.1 1
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
, DC CURRENT GAIN , DC CURRENT GAIN
FE FE
h h
**----- End of picture text -----**
**Figure 19. DC Current Gain vs. Collector Current** **Figure 20. DC Current Gain vs. Collector Current** **==> picture [492 x 382] intentionally omitted <==** **----- Start of picture text -----**
0.30
IC/IB = 20
0.25
150 ° C
0.20
25 ° C
0.15
0.10
−55 ° C
0.05
0
0.0001 0.001 0.01 0.1
IC, COLLECTOR CURRENT (A)
Figure 21. Collector Emitter Saturation Voltage
vs. Collector Current
1.1 1.2
1.0 IC/IB = 20 −55 ° C 1.1 VCE = 5 V
1.0
0.9
25 ° C 0.9 −55 ° C
0.8
0.8 25 ° C
0.7
150 ° C 0.7
0.6
0.6 150 ° C
0.5
0.5
0.4
0.4
0.3 0.3
0.2 0.2
0.0001 0.001 0.01 0.1 0.0001 0.001 0.01 0.1
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
, COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
CE(sat)
V
, BASE−EMITTER
BE(sat)
V , BASE−EMITTER VOLTAGE (V)
SATURATION VOLTAGE (V)
BE(on)
V
**----- End of picture text -----**
**Figure 22. Base Emitter Saturation Voltage vs. Collector Current** **Figure 23. Base Emitter Voltage vs. Collector Current** **www.onsemi.com** **7** **BC846ALT1G Series** ## **BC847B, BC848B, BC849B, BC850B, SBC846B, SBC847B, SBC848B** **==> picture [487 x 394] intentionally omitted <==** **----- Start of picture text -----**
2.0 1.0
TA = 25°C -55°C to +125°C
1.2
1.6
IC = 200 mA 1.6
1.2
IC = IC = IC = 50 mA IC = 100 mA
2.0
10 mA 20 mA
0.8
2.4
0.4
2.8
0
0.02 0.1 1.0 10 20 0.2 1.0 10 100
IB, BASE CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Figure 24. Collector Saturation Region Figure 25. Base−Emitter Temperature
Coefficient
10 400
300
7.0 T A = 25°C
200
5.0 C ib
3.0 10080 VTACE = 25 = 10 V°C
Cob
60
2.0
40
30
1.0 20
0.4 0.6 0.8 1.0 2.0 4.0 6.0 8.0 10 20 40 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50
VR, REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mAdc)
C)°
VCE, COLLECTOR-EMITTER VOLTAGE (V) VB, TEMPERATURE COEFFICIENT (mV/
θ
C, CAPACITANCE (pF)
f�, CURRENT-GAIN - BANDWIDTH PRODUCT (MHz)T
**----- End of picture text -----**
**Figure 26. Capacitances** **Figure 27. Current−Gain − Bandwidth Product** **www.onsemi.com** **8** **BC846ALT1G Series** ## **BC846C, BC847C, BC848C, BC849C, BC850C, SBC847C** **==> picture [492 x 595] intentionally omitted <==** **----- Start of picture text -----**
1000 1000
900 150 ° C VCE = 1 V 900 150 ° C VCE = 5 V
800 800
700 700
600 25 ° C 600 25 ° C
500 500
400 400
−55 ° C −55 ° C
300 300
200 200
100 100
0 0
0.001 0.01 0.1 1 0.001 0.01 0.1 1
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
Figure 28. DC Current Gain vs. Collector Figure 29. DC Current Gain vs. Collector
Current Current
0.30
IC/IB = 20
0.25
150 ° C
0.20
25 ° C
0.15
0.10
−55 ° C
0.05
0
0.0001 0.001 0.01 0.1
IC, COLLECTOR CURRENT (A)
Figure 30. Collector Emitter Saturation Voltage
vs. Collector Current
1.1 1.2
1.0 IC/IB = 20 −55 ° C 1.1 VCE = 5 V
1.0
0.9
25 ° C 0.9 −55 ° C
0.8
0.7 0.8 25 ° C
150 ° C 0.7
0.6
0.6 150 ° C
0.5
0.5
0.4
0.4
0.3 0.3
0.2 0.2
0.0001 0.001 0.01 0.1 0.0001 0.001 0.01 0.1
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
, DC CURRENT GAIN , DC CURRENT GAIN
FE FE
h h
, COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
CE(sat)
V
, BASE−EMITTER
BE(sat)
V , BASE−EMITTER VOLTAGE (V)
SATURATION VOLTAGE (V)
BE(on)
V
**----- End of picture text -----**
**Figure 31. Base Emitter Saturation Voltage vs. Collector Current** **Figure 32. Base Emitter Voltage vs. Collector Current** **www.onsemi.com** **9** **BC846ALT1G Series** ## **BC846C, BC847C, BC848C, BC849C, BC850C, SBC847C** **==> picture [487 x 394] intentionally omitted <==** **----- Start of picture text -----**
2.0 1.0
TA = 25°C -55°C to +125°C
1.2
1.6
IC = 200 mA 1.6
1.2
IC = IC = IC = 50 mA IC = 100 mA
2.0
10 mA 20 mA
0.8
2.4
0.4
2.8
0
0.02 0.1 1.0 10 20 0.2 1.0 10 100
IB, BASE CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Figure 33. Collector Saturation Region Figure 34. Base−Emitter Temperature
Coefficient
10 400
300
7.0 T A = 25°C
200
5.0 C ib
3.0 10080 VTACE = 25 = 10 V°C
Cob
60
2.0
40
30
1.0 20
0.4 0.6 0.8 1.0 2.0 4.0 6.0 8.0 10 20 40 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50
VR, REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mAdc)
C)°
VCE, COLLECTOR-EMITTER VOLTAGE (V) VB, TEMPERATURE COEFFICIENT (mV/
θ
C, CAPACITANCE (pF)
f�, CURRENT-GAIN - BANDWIDTH PRODUCT (MHz)T
**----- End of picture text -----**
**Figure 35. Capacitances** **Figure 36. Current−Gain − Bandwidth Product** **www.onsemi.com** **10** **BC846ALT1G Series** **==> picture [491 x 382] intentionally omitted <==** **----- Start of picture text -----**
1 1
100 mS 10 mS 100 mS 10 mS
1 mS 1 mS
0.1 1 S 0.1 1 S
Thermal Limit Thermal Limit
0.01 0.01
0.001 0.001
1 10 100 0.1 1 10 100
VCE, COLLECTOR EMITTER VOLTAGE (V) VCE, COLLECTOR EMITTER VOLTAGE (V)
Figure 37. Safe Operating Area for Figure 38. Safe Operating Area for
BC846A, BC846B, BC846C BC847A, BC847B, BC847C, BC850B, BC850C
1
100 mS 10 mS
1 mS
0.1 1 S
Thermal Limit
0.01
0.001
0.1 1 10 100
VCE, COLLECTOR EMITTER VOLTAGE (V)
, COLLECTOR CURRENT (A) , COLLECTOR CURRENT (A)
IC IC
, COLLECTOR CURRENT (A)
IC
**----- End of picture text -----**
**Figure 39. Safe Operating Area for BC848A, BC848B, BC848C, BC849B, BC849C** **www.onsemi.com** **11** **BC846ALT1G Series** ## **ORDERING INFORMATION** |**ORDERING INFORMATION**|||| |---|---|---|---| |**Device**|**Marking**|**Package**|**Shipping**†| |BC846ALT1G|1A|SOT−23
(Pb−Free)|3,000 / Tape & Reel| |SBC846ALT1G*|||| |BC846ALT3G|||10,000 / Tape & Reel| |BC846BLT1G|1B||3,000 / Tape & Reel| |SBC846BLT1G*|||| |BC846BLT3G|||10,000 / Tape & Reel| |SBC846BLT3G*|||| |BC846CLT1G|3C||3,000 / Tape & Reel| |BC847ALT1G|1E||3,000 / Tape & Reel| |BC847ALT3G|||10,000 / Tape & Reel| |BC847BLT1G|1F||3,000 / Tape & Reel| |SBC847BLT1G*|||| |BC847BLT3G|||10,000 / Tape & Reel| |NSVBC847BLT3G*|||| |BC847CLT1G|1G||3,000 / Tape & Reel| |SBC847CLT1G*|||| |BC847CLT3G|||10,000 / Tape & Reel| |BC848ALT1G|1J||3,000 / Tape & Reel| |BC848BLT1G|1K||3,000 / Tape & Reel| |SBC848BLT1G*|||| |BC848BLT3G|||10,000 / Tape & Reel| |BC848CLT1G|1L||3,000 / Tape & Reel| |NSVBC848CLT1G*|||| |BC848CLT3G|||10,000 / Tape & Reel| |BC849BLT1G|2B||3,000 / Tape & Reel| |NSVBC849BLT1G*|||| |BC849BLT3G|||10,000 / Tape & Reel| |BC849CLT1G|2C||3,000 / Tape & Reel| |BC849CLT3G|||10,000 / Tape & Reel| |BC850BLT1G|2F||3,000 / Tape & Reel| |NSVBC850BLT1G*|||| |BC850CLT1G|2G||| |NSVBC850CLT1G*|||| †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. - *S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable. **www.onsemi.com** **12** **BC846ALT1G Series** ## **PACKAGE DIMENSIONS** **==> picture [463 x 364] intentionally omitted <==** **----- Start of picture text -----**
SOT−23 (TO−236)
CASE 318−08
ISSUE AS
D NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
0.25 MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
a E a 3 HE T = 4. THE BASE MATERIAL.DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,PROTRUSIONS, OR GATE BURRS.
1 2
MILLIMETERS INCHES
DIM MIN NOM MAX MIN NOM MAX
L A 0.89 1.00 1.11 0.035 0.039 0.044
3X b L1 A1b 0.010.37 0.060.44 0.100.50 0.0000.015 0.0020.017 0.0040.020
e VIEW C c 0.08 0.14 0.20 0.003 0.006 0.008
TOP VIEW D 2.80 2.90 3.04 0.110 0.114 0.120
E 1.20 1.30 1.40 0.047 0.051 0.055
e 1.78 1.90 2.04 0.070 0.075 0.080
L 0.30 0.43 0.55 0.012 0.017 0.022
A L1 0.35 0.54 0.69 0.014 0.021 0.027
H E 2.10 2.40 2.64 0.083 0.094 0.104
T 0 ° −−− 10 ° 0 ° −−− 10 °
es A1 SIDE VIEW SEE VIEW C c STYLE 6:
END VIEW PIN 1. BASE
2. EMITTER
3. COLLECTOR
RECOMMENDED
SOLDERING FOOTPRINT*
3X
2.90 r o 0.90
Lo | cr
3X 0.80 ne 0.95
PITCH
DIMENSIONS: MILLIMETERS
**----- End of picture text -----**
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