# Small Signal Diode, Single, 250 V, 200 mA, 1.25 V, 50 ns, 20 A

![Product image](https://novapart.co/image/farnell:2723931RL/)

**URL**: https://novapart.co/products/NSVBAS21HT1G/small-signal-diode-single-250-v-200-ma-125-50-ns
**SKU**: NSVBAS21HT1G
**Manufacturer**: ONSEMI
**Category**: Semiconductors - Discretes || Diodes & Rectifiers || Small Signal Diodes
**Price**: €0.0400
**Stock**: 10+
**Lead Time**: 92 days (indicative)

## Description

Diode Configuration:Single; Repetitive Reverse Voltage Vrrm Max:250V; Forward Current If(AV):200mA; Forward Voltage VF Max:1.25V; Reverse Recovery Time trr Max:50ns; Forward Surge Cur

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 2Pins |
| Product Range | - |
| Qualification | AEC-Q101 |
| Diode Mounting | Surface Mount |
| Diode Case Style | SOD-323 |
| Diode Configuration | Single |
| Forward Voltage Max | 1.25V |
| Forward Surge Current | 20A |
| Reverse Recovery Time | 50ns |
| Average Forward Current | 200mA |
| Operating Temperature Max | 150°C |
| Repetitive Peak Reverse Voltage | 250V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2723931RL/)

## High Voltage Switchin Diode g 

## BAS21H 

## **Features** 

- NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable 

- These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 

**www.onsemi.com** 

## **HIGH VOLTAGE SWITCHING DIODE** 

## **MAXIMUM RATINGS** 

|**Rating**<br>**Symbol**<br>**Value**<br>**Unit**<br>Continuous Reverse Voltage<br>VR<br>250<br>V<br>Repetitive Peak Reverse Voltage<br>VRRM<br>250<br>V<br>Peak Forward Current<br>IF<br>200<br>mA<br>Repetitive Peak Forward Current<br>IFRM<br>500<br>mA<br>Non−Repetitive Peak Forward Surge<br>Current, 60 Hz<br>IFSM(surge)<br>2.5<br>A<br>~~a~~<br>~~**Gs**~~<br>~~es~~<br>~~a~~<br>~~Gs~~<br>~~a~~<br>~~Gs~~<br>~~a~~<br>~~es~~|**Rating**<br>**Symbol**<br>**Value**<br>**Unit**<br>Continuous Reverse Voltage<br>VR<br>250<br>V<br>Repetitive Peak Reverse Voltage<br>VRRM<br>250<br>V<br>Peak Forward Current<br>IF<br>200<br>mA<br>Repetitive Peak Forward Current<br>IFRM<br>500<br>mA<br>Non−Repetitive Peak Forward Surge<br>Current, 60 Hz<br>IFSM(surge)<br>2.5<br>A<br>~~a~~<br>~~**Gs**~~<br>~~es~~<br>~~a~~<br>~~Gs~~<br>~~a~~<br>~~Gs~~<br>~~a~~<br>~~es~~|
|---|---|
|Non−Repetitive Peak Forward Current<br>IFSM|A|
|(Square Wave, TJ= 25°C prior to||
|surge)||
|t = 1 s<br>20||
|t = 10 s<br>20||
|t = 100 s<br>10||
|t = 1 ms<br>4||
|t = 1 s<br>1<br>**THERMAL CHARACTERISTICS**||
|**Characteristic**<br>**Symbol**<br>**Max**<br>~~a~~<br>~~Gs~~|**Unit**|
|Total Device Dissipation FR−5 Board,<br>PD<br>200|mW|
|(Note 1)<br>TA= 25°C||
|Derate above 25°C<br>1.57|mW/°C|
|Thermal Resistance,|°C/W|
|Junction−to−Ambient<br>Junction−to−Lead<br>Junction−to−Top<br>R JA<br>R JL<br>R JT<br>635<br>240<br>436<br>Junction and Storage Temperature<br>Range<br>TJ, Tstg<br>−55 to<br>+150<br>°C<br>Stresses exceeding those listed in the Maximum Ratings table may damage the<br>device. If any of these limits are exceeded, device functionality should not be<br>assumed, damage may occur and reliability may be affected.<br>1. FR−5 Minimum Pad<br>~~ee~~||



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**----- Start of picture text -----**<br>
1 2<br>CATHODE o—t¢—0 ANODE<br>MARKING<br>2 DIAGRAM<br>1 SOD−323<br>CASE 477 JS M<br>STYLE 1<br>**----- End of picture text -----**<br>


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JS = Device Code<br>M = Date Code*<br>| = Pb−Free Package<br>(Note: Microdot may be in either location)<br>**----- End of picture text -----**<br>


*Date Code orientation may vary depending upon manufacturing location. 

**ORDERING INFORMATION** 

**Device Package Shipping**[†] BAS21HT1G, SOD−323 3000 / Tape & Reel NSVBAS21HT1G (Pb−Free) BAS21HT3G, SOD−323 10000 / Tape & NSVBAS21HT3G (Pb−Free) Reel ~~Tt~~ †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 

Publication Order Number: 

**1** 

© Semiconductor Components Industries, LLC, 2016 **June, 2020 − Rev. 14** 

**BAS21HT1/D** 

**BAS21H** 

## **ELECTRICAL CHARACTERISTICS** (TA = 25 ° C unless otherwise noted) 

|**ELECTRICAL CHARACTERISTICS**(TA= 25°C unless otherwise noted)|||||
|---|---|---|---|---|
|**Characteristic**|**Symbol**|**Min**|**Max**|**Unit**|
|**OFF CHARACTERISTICS**|||||
|Reverse Voltage Leakage Current<br>(VR= 200 Vdc)<br>(VR= 200 Vdc, TJ= 150°C)|IR|−<br>−|0.1<br>100|�Adc|
|Reverse Breakdown Voltage<br>(IBR= 100�Adc)|V(BR)|250|−|Vdc|
|Forward Voltage<br>(IF= 100 mAdc)<br>(IF= 200 mAdc)|VF|−<br>−|1000<br>1250|mV|
|Diode Capacitance<br>(VR= 0, f = 1.0 MHz)|CD|−|5.0|pF|
|Reverse Recovery Time<br>(IF= IR= 30 mAdc, RL= 100�)|trr|−|50|ns|



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 

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820 �<br>IF<br>+10 V 2.0 k 0.1 �F tr t p t<br>100 �H IF 10% t rr t<br>0.1 �F<br>D.U.T. 90%<br>50 � OUTPUT 50 � INPUT iR(REC) = 3.0 mA<br>IR<br>PULSE SAMPLING VR OUTPUT PULSE<br>GENERATOR OSCILLOSCOPE INPUT SIGNAL<br>(IF = IR = 30 mA; MEASURED<br>at iR(REC) = 3.0 mA)<br>**----- End of picture text -----**<br>


Notes: 1. A 2.0 k � variable resistor adjusted for a Forward Current (IF) of 30 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 30 mA. Notes: 3. tp » trr 

**Figure 1. Recovery Time Equivalent Test Circuit** 

**www.onsemi.com** 

**2** 

**BAS21H** 

## **TYPICAL CHARACTERISTICS** 

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**----- Start of picture text -----**<br>
1200<br>TA = −55 ° C<br>1000 25 ° C<br>800<br>155 ° C<br>600<br>400<br>200<br>1<br>1 10 100 1000<br>FORWARD CURRENT (mA)<br>Figure 2. Forward Voltage<br>1.0<br>0.9<br>0.8<br>0.7<br>0.6<br>0.5<br>0.4<br>0.3<br>0 1 2 3 4 5 6 7 8<br>VR, REVERSE VOLTAGE (V)<br>FORWARD VOLTAGE (mV)<br>, DIODE CAPACITANCE (pF)<br>d<br>C<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
7000<br>6000<br>5000 TA = 155 ° C<br>4000<br>3000<br>6<br>5<br>4<br>3<br>2 TA = 25 ° C<br>1 TA = −55 ° C<br>0<br>1 2 5 10 20 50 100 200 300<br>REVERSE VOLTAGE (V)<br>Figure 3. Reverse Leakage<br>25<br>Based on square wave currents<br>20 TJ = 25 ° C prior to surge<br>15<br>10<br>5<br>0<br>0.001 0.01 0.1 1 10<br>Tp (mSec)<br>REVERSE CURRENT (nA)<br> (A)<br>IFSM<br>**----- End of picture text -----**<br>


**Figure 4. Diode Capacitance** 

**Figure 5. Maximum Non−repetitive Peak Forward Current as a Function of Pulse Duration, Typical Values** 

**www.onsemi.com** 

**3** 

MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** 

DATE 13 MAR 2007 

**SOD−323** CASE 477−02 ISSUE H 

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a 2 2<br>1 1<br>STYLE 1 STYLE 2<br>SCALE 4:1<br>HE<br>D<br>=<br>b 1 2 E<br>=<br>A3<br>A<br>C if NOTE 5L A1 C o,<br>NOTE 3<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
SOLDERING FOOTPRINT*<br>0.63<br>0.025<br>se<br>0.83<br>0.033<br>1.60<br>Ua<br>0.063<br>2.85<br>0.112<br>**----- End of picture text -----**<br>


- *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 

NOTES: 

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 

2. CONTROLLING DIMENSION: MILLIMETERS. 

3. LEAD THICKNESS SPECIFIED PER L/F DRAWING WITH SOLDER PLATING. 

4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. 

5. DIMENSION L IS MEASURED FROM END OF RADIUS. 

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**----- Start of picture text -----**<br>
MILLIMETERS INCHES<br>DIM MIN NOM MAX MIN NOM MAX<br>A 0.80 0.90 1.00 0.031 0.035 0.040<br>A1 0.00 0.05 0.10 0.000 0.002 0.004<br>A3 0.15 REF 0.006 REF<br>b 0.25 0.32 0.4 0.010 0.012 0.016<br>C 0.089 0.12 0.177 0.003 0.005 0.007<br>D 1.60 1.70 1.80 0.062 0.066 0.070<br>E 1.15 1.25 1.35 0.045 0.049 0.053<br>L 0.08 0.003<br>HE 2.30 2.50 2.70 0.090 0.098 0.105<br>Pt —— —*| 4 ]<br>**----- End of picture text -----**<br>


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GENERIC<br>MARKING DIAGRAM*<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
XX M XX M<br>qf p 2:<br>STYLE 1 STYLE 2<br>XX = Specific Device Code<br>M = Date Code<br>**----- End of picture text -----**<br>


- *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ ”, may or may not be present. 

STYLE 1: STYLE 2: PIN 1. CATHODE (POLARITY BAND) NO POLARITY 2. ANODE 

Electronic versions are uncontrolled except when accessed directly from the Document Repository. **DOCUMENT NUMBER: 98ASB17533C** Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red. **DESCRIPTION: SOD−323 PAGE 1 OF 1** ~~ee~~ ON Semiconductor and          are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. 

www.onsemi.com 

© Semiconductor Components Industries, LLC, 2019 

**onsemi** , , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “ **onsemi** ” or its affiliates and/or subsidiaries in the United States and/or other countries. **onsemi** owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of **onsemi’s** product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. **onsemi** reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and **onsemi** makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using **onsemi** products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by **onsemi** . “Typical” parameters which may be provided in **onsemi** data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. **onsemi** does not convey any license under any of its intellectual property rights nor the rights of others. **onsemi** products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use **onsemi** products for any such unintended or unauthorized application, Buyer shall indemnify and hold **onsemi** and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that **onsemi** was negligent regarding the design or manufacture of the part. **onsemi** is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 

## **PUBLICATION ORDERING INFORMATION** 

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◊ 

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