# Small Signal Diode, Single, 100 V, 200 mA, 1.25 V, 6 ns, 500 mA
**URL**: https://novapart.co/products/NSVBAS16TT1G/small-signal-diode-single-100-v-200-ma-125-6-ns
**SKU**: NSVBAS16TT1G
**Manufacturer**: ONSEMI
**Category**: Semiconductors - Discretes || Diodes & Rectifiers || Small Signal Diodes
**Price**: €0.0330
**Stock**: 10+
**Lead Time**: 78 days (indicative)
## Specifications
| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | - |
| Qualification | AEC-Q101 |
| Diode Mounting | Surface Mount |
| Diode Case Style | SOT-416 |
| Diode Configuration | Single |
| Forward Voltage Max | 1.25V |
| Forward Surge Current | 500mA |
| Reverse Recovery Time | 6ns |
| Average Forward Current | 200mA |
| Operating Temperature Max | 150°C |
| Repetitive Peak Reverse Voltage | 100V |
## Datasheet
📄 [Download PDF](https://novapart.co/datasheet/farnell:3606747/)
**DATA SHEET www.onsemi.com**
## Silicon Switching Diode
## BAS16TT1G
## **Features**
- These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
## **MAXIMUM RATINGS** (TA = 25 ° C)
|**MAXIMUM RATINGS**(TA= 25°C)||||
|---|---|---|---|
|**Rating**|**Symbol**|**Max**|**Unit**|
|Continuous Reverse Voltage|VR|100|V|
|Recurrent Peak Forward Current|IF|200|mA|
|Peak Forward Surge Current
Pulse Width = 10�s|IFM(surge)|500|mA|
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
## **THERMAL CHARACTERISTICS**
|**THERMAL CHARACTERISTICS**||||
|---|---|---|---|
|**Characteristic**|**Symbol**|**Max**|**Unit**|
|Total Device Dissipation,
FR−4 Board (Note 1)
TA= 25°C
Derated above 25°C|PD|225
1.8|mW
mW/°C|
|Thermal Resistance,
Junction−to−Ambient (Note 1)|R�JA|555|°C/W|
|Total Device Dissipation,
FR−4 Board (Note 2)
TA= 25°C
Derated above 25°C|PD|360
2.9|mW
mW/°C|
|Thermal Resistance,
Junction−to−Ambient (Note 2)|R�JA|345|°C/W|
|Junction and Storage
Temperature Range|TJ, Tstg|−55 to
+150|°C|
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR−4 @ Minimum Pad
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3
1 [2]
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CASE 463
SOT−416
STYLE 2
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3 1
CATHODE ANODE
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## **MARKING DIAGRAM**
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A6 [M] �
�
1
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XX = Specific Device Code M = Date Code � = Pb−Free Package
## **ORDERING INFORMATION**
|**Device**|**Package**|**Shipping**†|
|---|---|---|
|BAS16TT1G|SOT−416
(Pb−Free)|3000 /
Tape & Reel|
|NSVBAS16TT1G|SOT−416
(Pb−Free)|3000 /
Tape & Reel|
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
2. FR−4 @ 1.0 × 1.0 Inch Pad
Publication Order Number:
**1**
© Semiconductor Components Industries, LLC, 2013 **May, 2023 − Rev. 5**
**BAS16TT1/D**
## **BAS16TT1G**
## **ELECTRICAL CHARACTERISTICS** (TA = 25 ° C unless otherwise noted)
|**ELECTRICAL CHARACTERISTICS**(TA= 25°C unless otherwise noted)|||||
|---|---|---|---|---|
|**Characteristic**|**Symbol**|**Min**|**Max**|**Unit**|
|Forward Voltage
(IF= 1.0 mA)
(IF= 10 mA)
(IF= 50 mA)
(IF= 150 mA)|VF|−
−
−
−|715
866
1000
1250|mV|
|Reverse Current
(VR= 100 V)
(VR= 75 V, TJ= 150°C)
(VR= 25 V, TJ= 150°C)|IR|−
−
−|1.0
50
30|�A|
|Capacitance
(VR= 0, f = 1.0 MHz)|CD|−|2.0|pF|
|Reverse Recovery Time
(IF= IR= 10 mA, RL= 50�) (Figure 1)|trr|−|6.0|ns|
|Stored Charge
(IF= 10 mA to VR= 6.0 V, RL= 500�) (Figure 2)|QS|−|45|PC|
|Forward Recovery Voltage
(IF= 10 mA, tr= 20 ns) (Figure 3)|VFR|−|1.75|V|
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
**www.onsemi.com**
**2**
**BAS16TT1G**
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1 ns MAX
t 500 � DUT
10% trr
tif
50 �
DUTY CYCLE = 2%
90%
VF Irr
100 ns
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**Figure 1. Reverse Recovery Time Equivalent Test Circuit**
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OSCILLOSCOPE
R � 10 M �
C � 7 pF
VC 500 � DUT BAW62
20 ns MAX VCM
t D1 243 pF 100 K�
10%
VCM � [Qa]
C
DUTY CYCLE = 2%
t
90%
Vf
400 ns
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**Figure 2. Stored Charge Equivalent Test Circuit**
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V
120 ns
1 K� 450 �
V
90%
DUT 50 �
Vfr
10% t
DUTY CYCLE = 2%
2 ns MAX
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**Figure 3. Forward Recovery Voltage Equivalent Test Circuit**
**www.onsemi.com**
**3**
## **BAS16TT1G**
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100 10
TA = 150°C
TA = 125°C
1.0
10
TA = 85°C TA = 85°C
0.1
1.0 TA = 25°C TA = 55°C
TA = -�40°C 0.01
TA = 25°C
0.1 0.001
0.2 0.4 0.6 0.8 1.0 1.2 0 10 20 30 40 50
VF, FORWARD VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS)
A)
μ
IR, REVERSE CURRENT (
IF, FORWARD CURRENT (mA)
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**Figure 4. Forward Voltage**
**Figure 5. Leakage Current**
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0.68
0.64
0.60
0.56
0.52
0 2 4 6 8
VR, REVERSE VOLTAGE (VOLTS)
CD, DIODE CAPACITANCE (pF)
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**Figure 6. Capacitance**
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1.0
D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01 0.01
SINGLE PULSE
0.001
0.00001 0.0001 0.001 0.01 0.1 1.0 10 100 1000
t, TIME (s)
r(t), NORMALIZED TRANSIENT THERMAL RESISTANCE
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**Figure 7. Normalized Thermal Response**
**www.onsemi.com**
**4**
MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS**
## **SC75−3 1.60x0.80x0.80, 1.00P**
CASE 463 ISSUE H
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DATE 01 FEB 2024
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GENERIC
MARKING DIAGRAM*
XXM
1
XX = Specific Device Code
M = Date Code
= Pb−Free Package
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*This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ ”, may or may not be present. Some products may not follow the Generic Marking.
STYLE 1: STYLE 2: STYLE 3: PIN 1. BASE PIN 1. ANODE PIN 1. ANODE 2. EMITTER 2. N/C 2. ANODE 3. COLLECTOR 3. CATHODE 3. CATHODE
STYLE 4: STYLE 5: PIN 1. CATHODE PIN 1. GATE 2. CATHODE 2. SOURCE 3. ANODE 3. DRAIN
Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
**DOCUMENT NUMBER: 98ASB15184C**
**DESCRIPTION: SC75−3 1.60x0.80x0.80, 1.00P**
**PAGE 1 OF 1**
**onsemi** and are trademarks of Semiconductor Components Industries, LLC dba **onsemi** or its subsidiaries in the United States and/or other countries. **onsemi** reserves the right to make changes without further notice to any products herein. **onsemi** makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. **onsemi** does not convey any license under its patent rights nor the rights of others.
www.onsemi.com
Semiconductor Components Industries, LLC, 1996
**onsemi** , , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “ **onsemi** ” or its affiliates and/or subsidiaries in the United States and/or other countries. **onsemi** owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of **onsemi** ’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. **onsemi** reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and **onsemi** makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using **onsemi** products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by **onsemi** . “Typical” parameters which may be provided in **onsemi** data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. **onsemi** does not convey any license under any of its intellectual property rights nor the rights of others. **onsemi** products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use **onsemi** products for any such unintended or unauthorized application, Buyer shall indemnify and hold **onsemi** and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that **onsemi** was negligent regarding the design or manufacture of the part. **onsemi** is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
## **ADDITIONAL INFORMATION**
**TECHNICAL PUBLICATIONS** : **ONLINE SUPPORT** : www.onsemi.com/support **Technical Library:** www.onsemi.com/design/resources/technical−documentation **For additional information, please contact your local Sales Representative at onsemi Website:** www.onsemi.com www.onsemi.com/support/sales
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## Links
- [View this product on Novapart](https://novapart.co/products/NSVBAS16TT1G/small-signal-diode-single-100-v-200-ma-125-6-ns)
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- [Supplier page](https://es.farnell.com/on-semiconductor/nsvbas16tt1g/100-v-switching-diode/dp/3606747)
---
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