# Bipolar (BJT) Single Transistor, NPN, 100 V, 2 A, 800 mW, SOT-223, Surface Mount
**URL**: https://novapart.co/products/NSV1C201MZ4T1G/bipolar-bjt-single-transistor-npn-100-v-2-a-800-mw
**SKU**: NSV1C201MZ4T1G
**Manufacturer**: ONSEMI
**Category**: Semiconductors - Discretes || Transistors || Bipolar Transistors || Single Bipolar Junction Transistors - BJT
**Price**: €0.2380
**Stock**: 200+
**Lead Time**: 2 days (indicative)
## Description
Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:100V; Transition Frequency ft:100MHz; Power Dissipation Pd:800mW; DC Collector Current:2A; DC Current Gain hFE:40hFE;
## Specifications
| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | Lead (25-Jun-2025) |
| No. Of Pins | 4Pins |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 800mW |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | NPN |
| Transition Frequency | 100MHz |
| Transistor Case Style | SOT-223 |
| Dc Current Gain Hfe Min | 40hFE |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 2A |
| Collector Emitter Voltage Max | 100V |
## Datasheet
📄 [Download PDF](https://novapart.co/datasheet/farnell:2825125/)
## NSS1C201MZ4, NSV1C201MZ4
## 100 V, 2.0 A, Low VCE(sat) NPN Transistor
ON Semiconductor’s e[2] PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important.
## **http://onsemi.com**
## **100 VOLTS, 2.0 AMPS NPN LOW V TRANSISTOR CE(sat)**
Typical applications are DC−DC converters and power management in portable and battery powered products such as cellular and cordless phones, PDAs, computers, printers, digital cameras and MP3 players. Other applications are low voltage motor controls in mass storage products such as disc drives and tape drives. In the automotive industry they can be used in air bag deployment and in the instrument cluster. The high current gain allows e[2] PowerEdge devices to be driven directly from PMU’s control outputs, and the Linear Gain (Beta) makes them ideal components in analog amplifiers.
**==> picture [79 x 88] intentionally omitted <==**
**----- Start of picture text -----**
COLLECTOR
2,4
1
BASE
© )
3
EMITTER
**----- End of picture text -----**
## **Features**
- NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
Qualified and PPAP Capable **MARKING DIAGRAM** • These Devices are Pb−Free, Halogen Free and are RoHS Compliant **MAXIMUM RATINGS** (TA = 25 ° C) **SOT−223** AYW **Rating Symbol Max Unit CASE 318E** 1C201 Collector-Emitter Voltage VCEO 100 Vdc **STYLE 1** 1 Collector-Base Voltage VCBO 140 Vdc Emitter-Base Voltage VEBO 7.0 Vdc A = Assembly Location Y = Year Collector Current − Continuous IC 2.0 A W = Work Week Collector Current − Peak ICM 3.0 A 1C201 = Specific Device Code **THERMAL CHARACTERISTICS** = Pb−Free Package **Characteristic Symbol Max Unit** ~~== SSS *~~ **PIN ASSIGNMENT** ~~bod~~ Total Device DissipationTA = 25 ° C PD (Note 1) 800 mW 4 Derate above 25 ° C 6.5 mW/ ° C C Thermal Resistance, R JA (Note 1) 155 ° C/W Junction−to−Ambient Total Device Dissipation PD (Note 2) B C E TA = 25 ° C 2.0 W 1 2 3 Derate above 25 ° C 15.6 mW/ ° C Thermal Resistance, R JA (Note 2) 64 ° C/W Top View Pinout ~~—~~ Junction−to−Ambient **ORDERING INFORMATION** ~~7~~ Total Device Dissipation PDsingle 710 mW (Single Pulse < 10 sec.) (Note 3) **Device Package Shipping**[†] Junction and Storage TJ, Tstg −55 to ° C NSS1C201MZ4T1G SOT−223 1000/ Temperature Range +150 NSV1C201MZ4T1G (Pb−Free) Tape & Reel Stresses exceeding Maximum Ratings may damage the device. Maximum NSS1C201MZ4T3G SOT−223 4000/ Ratings are stress ratings only. Functional operation above the Recommended (Pb−Free) Tape & Reel Operating Conditions is not implied. Extended exposure to stresses above the ~~yr Tt~~ Recommended Operating Conditions may affect device reliability. †For information on tape and reel specifications, 1. FR−4 @ 7.6 mm[2] , 1 oz. copper traces.
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.
2. FR−4 @ 645 mm[2] , 1 oz. copper traces.
3. Thermal response.
Publication Order Number: **NSS1C201MZ4/D**
**1**
© Semiconductor Components Industries, LLC, 2013 **March, 2013 − Rev. 4**
**NSS1C201MZ4, NSV1C201MZ4**
## **ELECTRICAL CHARACTERISTICS** (TA = 25 ° C unless otherwise noted)
|**ELECTRICAL CHARACTERISTICS**(TA= 25°C unless otherwise n|oted)|||||
|---|---|---|---|---|---|
|**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|
|**OFF CHARACTERISTICS**||||||
|Collector−Emitter Breakdown Voltage (IC= 10 mAdc, IB= 0)|V(BR)CEO|100|||Vdc|
|Collector−Base Breakdown Voltage (IC= 0.1 mAdc, IE= 0)|V(BR)CBO|140|||Vdc|
|Emitter−Base Breakdown Voltage (IE= 0.1 mAdc, IC= 0)|V(BR)EBO|7.0|||Vdc|
|Collector Cutoff Current (VCB= 140 Vdc, IE= 0)|ICBO|||100|nA|
|Emitter Cutoff Current (VEB= 6.0 Vdc)|IEBO|||50|nA|
|**ON CHARACTERISTICS**||||||
|DC Current Gain (Note 4)
(IC= 10 mA, VCE= 2.0 V)
(IC= 500 mA, VCE= 2.0 V)
(IC= 1.0 A, VCE= 2.0 V)
(IC= 2.0 A, VCE= 2.0 V)|hFE|150
120
80
40||360||
|Collector−Emitter Saturation Voltage (Note 4)
(IC= 0.1 A, IB= 0.010 A)
(IC= 0.5 A, IB= 0.050 A)
(IC= 1.0 A, IB= 0.100 A)
(IC= 2.0 A, IB= 0.200 A)|VCE(sat)|||0.030
0.060
0.100
0.180|V|
|Base−Emitter Saturation Voltage (Note 4)
(IC= 1.0 A, IB= 0.100 A)|VBE(sat)|||1.10|V|
|Base−Emitter Turn−on Voltage (Note 4) (IC= 1.0 A, VCE= 2.0 V)|VBE(on)|||0.850|V|
|Cutoff Frequency (IC= 100 mA, VCE= 5.0 V, f = 100 MHz)|fT||100||MHz|
|Input Capacitance (VEB= 0.5 V, f = 1.0 MHz)|Cibo||305||pF|
|Output Capacitance (VCB= 3.0 V, f = 1.0 MHz)|Cobo||22||pF|
4. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%.
**TYPICAL CHARACTERISTICS**
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2.5
2.0
TC
1.5
1.0
TA
0.5
0
25 50 75 100 125 150
T, TEMPERATURE ( ° C)
, POWER DISSIPATION (W)
D
P
**----- End of picture text -----**
**Figure 1. Power Derating**
**http://onsemi.com**
**2**
**NSS1C201MZ4, NSV1C201MZ4**
## **TYPICAL CHARACTERISTICS**
**==> picture [492 x 593] intentionally omitted <==**
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400 400
360 150 ° C VCE = 2 V 360 150 ° C VCE = 4 V
320 320
280 280
240 240
200 25 ° C 200 25 ° C
160 160
120 −55 ° C 120 −55 ° C
80 80
40 40
0 0
0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
Figure 2. DC Current Gain Figure 3. DC Current Gain
1 1
IC /IB = 10 IC /IB = 20
150 ° C
0.1 0.1 25 ° C
150 ° C
−55 ° C
25 ° C −55 ° C
0.01 0.01
0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
Figure 4. Collector−Emitter Saturation Voltage Figure 5. Collector−Emitter Saturation Voltage
1.4 1.4
IC /IB = 10 IC /IB = 50
1.2 1.2
1 1 −55 ° C
150 ° C
0.8 0.8
25 ° C
0.6 25 ° C 0.6
150 ° C
0.4 −55 ° C 0.4
0.2 0.2
0 0
0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
, DC CURRENT GAIN , DC CURRENT GAIN
RE RE
h h
, COLLECTOR−EMITTER , COLLECTOR−EMITTER
BE(sat) SATURATOIN VOLTAGE (V) CE(sat) SATURATOIN VOLTAGE (V)
V V
, BASE−EMITTER SATUR- ATOIN VOLTAGE (V) , BASE−EMITTER SATUR- ATOIN VOLTAGE (V)
BE(sat) BE(sat)
V V
**----- End of picture text -----**
**Figure 6. Base−Emitter Saturation Voltage**
**Figure 7. Base−Emitter Saturation Voltage**
**http://onsemi.com**
**3**
**NSS1C201MZ4, NSV1C201MZ4**
## **TYPICAL CHARACTERISTICS**
**==> picture [493 x 381] intentionally omitted <==**
**----- Start of picture text -----**
1.2 1.00
VCE = 2 V 0.5 A
1.0
−55 ° C 1 A 3 A
0.8
25 ° C IC = 0.1 A
2 A
0.6 0.10
150 ° C
0.4
0.2
TJ = 25 ° C
0.0 0.01
0.001 0.01 0.1 1 10 0.0001 0.001 0.01 0.1 1
IC, COLLECTOR CURRENT (A) IB, BASE CURRENT (A)
Figure 8. Base−Emitter Voltage Figure 9. Collector Saturation Region
400 50
350 TJ = 25J = 25 = 25 ° C 45 TJ = 25J = 25 = 25 ° C
fTEST = 1 MHzEST = 1 MHz = 1 MHz 40 fTEST = 1 MHzEST = 1 MHz = 1 MHz
300
35
250
30
200 25
20
150
15
100
10
50
5
0 0
0 1 2 3 4 5 6 7 8 0 10 20 30 40 50 60 70 80 90 100
VEB, BASE−EMITTER VOLTAGE (V) VCB, COLLECTOR BASE VOLTAGE (V)CB, COLLECTOR BASE VOLTAGE (V), COLLECTOR BASE VOLTAGE (V)
(V)
, COLLECTOR−EMITTER
, BASE−EMITTER VOLTAGE
SATURATOIN VOLTAGE (V)
CE(sat)
BE(on) V
V
, INPUT CAPACITANCE (pF) , OUTPUT CAPACITANCE (pF)
IB
C OB
C
**----- End of picture text -----**
**==> picture [494 x 389] intentionally omitted <==**
**----- Start of picture text -----**
400 50
350 TJ = 25J = 25 = 25 ° C 45 TJ = 25J = 25 = 25 ° C
fTEST = 1 MHzEST = 1 MHz = 1 MHz 40 fTEST = 1 MHzEST = 1 MHz = 1 MHz
300
35
250
30
200 25
20
150
15
100
10
50
5
0 0
0 1 2 3 4 5 6 7 8 0 10 20 30 40 50 60 70 80 90 100
VEB, BASE−EMITTER VOLTAGE (V) VCB, COLLECTOR BASE VOLTAGE (V)CB, COLLECTOR BASE VOLTAGE (V), COLLECTOR BASE VOLTAGE (V)
Figure 10. Input Capacitance Figure 11. Output Capacitance
120 10
TJ = 25 ° C
100 fTEST = 1 MHz
VCE = 5 V 0.5 mS
80 1 100 mS 1 mS
60
10 mS
40 0.1
20
TJ = 25 ° C
0 0.01
0.001 0.01 0.1 1 10 1 10 100
IC, COLLECTOR CURRENT (A) VCE, COLLECTOR EMITTER VOLTAGE (V)
, INPUT CAPACITANCE (pF) , OUTPUT CAPACITANCE (pF)
IB
C OB
C
(MHz)
, CURRENT GAIN BANDWIDTH , COLLECTOR CURRENT (A)
IC
fTau
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**Figure 13. Safe Operating Area**
**Figure 12. Current Gain Bandwidth Product**
**http://onsemi.com**
**4**
**NSS1C201MZ4, NSV1C201MZ4**
## **PACKAGE DIMENSIONS**
**SOT−223 (TO−261)** CASE 318E−04
**==> picture [473 x 395] intentionally omitted <==**
**----- Start of picture text -----**
D ISSUE N
b1 NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCH.
4 MILLIMETERS INCHES
ot, - DIM MIN NOM MAX MIN NOM MAX
HE E A 1.50 1.63 1.75 0.060 0.064 0.068
1 2 3 A1 0.02 0.06 0.10 0.001 0.002 0.004
b 0.60 0.75 0.89 0.024 0.030 0.035
b1 2.90 3.06 3.20 0.115 0.121 0.126
c 0.24 0.29 0.35 0.009 0.012 0.014
b D 6.30 6.50 6.70 0.249 0.256 0.263
e1 Ee 3.302.20 3.502.30 3.702.40 0.1300.087 0.1380.091 0.1450.094
fa e e1 0.85 0.94 1.05 0.033 0.037 0.041
L 0.20 −−− −−− 0.008 −−− −−−
C L1 1.50 1.75 2.00 0.060 0.069 0.078
i , == H E 6.70 7.00 7.30 0.264 0.276 0.287
A 0° − 1 0° 0° − 1 0°
0.08 (0003) STYLE 1:
HR A1 L Goh) L1 BREESE PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
SOLDERING FOOTPRINT*
3.8
0.15
_ [a] [n]
2.0
0.079
eee7
6.3
2.3 2.3
0.248
0.091 0.091
2.0
0.079
“EELED:
1.5 SCALE 6:1 mm
_ | 0.059 — (—) inches
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*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
**ON Semiconductor** and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
## **PUBLICATION ORDERING INFORMATION**
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**NSS1C201MZ4/D**
**5**
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