# Bipolar Transistor Array, Complementary NPN and PNP, 40 V, 40 V, 200 mA, 200 mA, 500 mW

![Product image](https://novapart.co/image/farnell:2845427/)

**URL**: https://novapart.co/products/NST3946DXV6T1G/bipolar-transistor-array-complementary-npn-and-pnp
**SKU**: NST3946DXV6T1G
**Manufacturer**: ONSEMI
**Category**: Semiconductors - Discretes || Transistors || Bipolar Transistors || Bipolar Junction Transistor Arrays - BJT
**Price**: €0.0690
**Stock**: 10+
**Lead Time**: 99 days (indicative)

## Description

Transistor Polarity:NPN, PNP; Collector Emitter Voltage V(br)ceo:40V; Power Dissipation Pd:500mW; DC Collector Current:200mA; DC Current Gain hFE:100hFE; Transistor Case Style:SOT-563;

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 6Pins |
| Product Range | - |
| Qualification | - |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | Complementary NPN and PNP |
| Power Dissipation Npn | 500mW |
| Power Dissipation Pnp | 500mW |
| Transistor Case Style | SOT-563 |
| Transition Frequency Npn | 300MHz |
| Transition Frequency Pnp | 250MHz |
| Operating Temperature Max | 150°C |
| Dc Current Gain Hfe Min Npn | 100hFE |
| Dc Current Gain Hfe Min Pnp | 100hFE |
| Continuous Collector Current Npn | 200mA |
| Continuous Collector Current Pnp | 200mA |
| Collector Emitter Voltage Max Npn | 40V |
| Collector Emitter Voltage Max Pnp | 40V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2845427/)

## NST3946DXV6 

## Complementary General Purpose Transistor 

The NST3946DXV6T1 device is a spin-off of our popular SOT−23/SOT−323 three-leaded device. It is designed for general purpose amplifier applications and is housed in the SOT−563 six-leaded surface mount package. By putting two discrete devices in one package, this device is ideal for low-power surface mount applications where board space is at a premium. 

**http://onsemi.com** 

- hFE, 100−300 

- Low VCE(sat), ≤ 0.4 V 

**SOT−563 CASE 463A** 

- Simplifies Circuit Design 

- Reduces Board Space 

- Reduces Component Count 

- NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable 

- These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant 

## **Table 1. MAXIMUM RATINGS** 

|**Table 1. MAXIMUM RATINGS**||||
|---|---|---|---|
|**Rating**|**Symbol**|**Value**|**Unit**|
|Collector−Emitter Voltage<br>(NPN)<br>(PNP)|VCEO|40<br>−40|Vdc|
|Collector−Base Voltage<br>(NPN)<br>(PNP)|VCBO|60<br>−40|Vdc|
|Emitter−Base Voltage<br>(NPN)<br>(PNP)|VEBO|6.0<br>−5.0|Vdc|
|Collector Current − Continuous<br>(NPN)<br>(PNP)|IC|200<br>−200|mAdc|
|Electrostatic Discharge|ESD|HBM>16000,<br>MM>2000|V|



Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 

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(3) (2) (1)<br>Q1 Q2<br>ote<br>(4) (5) (6)<br>NST3946DXV6T1*<br>*Q1 PNP<br>Q2 NPN<br>**----- End of picture text -----**<br>


## **MARKING DIAGRAM** 

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46 M<br>46 = Specific Device Code<br>M = Date Code<br>= Pb-Free Package<br>(Note: Microdot may be in either location)<br>**----- End of picture text -----**<br>


**ORDERING INFORMATION** 

**Device Package Shipping**[†] NST3946DXV6T1G SOT−563 4,000 / Tape & (Pb-Free) Reel NSVT3946DXV6T1G SOT−563 4,000 / Tape & (Pb-Free) Reel NST3946DXV6T5G SOT−563 8,000 / Tape & (Pb-Free) Reel ~~=e~~ †For information on tape and reel specifications, 

including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. 

Publication Order Number: **NST3946DXV6T1/D** 

**1** 

© Semiconductor Components Industries, LLC, 2014 **July, 2014 − Rev. 3** 

**NST3946DXV6** 

## **Table 2. THERMAL CHARACTERISTICS** 

|**Table 2. THERMAL CHARACTERISTICS**||||
|---|---|---|---|
|**Characteristic (One Junction Heated)**|**Symbol**|**Max**|**Unit**|
|Total Device Dissipation<br>TA= 25°C<br>Derate above 25°C|PD|357<br>(Note 1)<br>2.9<br>(Note 1)|mW<br>mW/°C|
|Thermal Resistance<br>Junction-to-Ambient|R�JA|350<br>(Note 1)|°C/W|
|**Characteristic (Both Junctions Heated)**|**Symbol**|**Max**|**Unit**|
|Total Device Dissipation<br>TA= 25°C<br>Derate above 25°C|PD|500<br>(Note 1)<br>4.0<br>(Note 1)|mW<br>mW/°C|
|Thermal Resistance Junction-to-Ambient|R�JA|250<br>(Note 1)|°C/W|
|Junction and Storage Temperature Range|TJ, Tstg|55 to +150|°C|



1. FR−4 @ Minimum Pad 

## **ELECTRICAL CHARACTERISTICS** (TA = 25 ° C unless otherwise noted) 

|**ELECTRICAL CHARACTERISTICS**(TA= 25°C unless otherwise noted)|||||
|---|---|---|---|---|
|**Characteristic**|**Symbol**|**Min**|**Max**|**Unit**|
|**OFF CHARACTERISTICS**|||||
|Collector−Emitter Breakdown Voltage (Note 2)<br>(IC= 1.0 mAdc, IB= 0)<br>(NPN)<br>(IC= −1.0 mAdc, IB= 0)<br>(PNP)|V(BR)CEO|40<br>−40|−<br>−|Vdc|
|Collector−Base Breakdown Voltage<br>(IC= 10�Adc, IE= 0)<br>(NPN)<br>(IC= −10�Adc, IE= 0)<br>(PNP)|V(BR)CBO|60<br>−40|−<br>−|Vdc|
|Emitter−Base Breakdown Voltage<br>(IE= 10�Adc, IC= 0)<br>(NPN)<br>(IE= −10�Adc, IC= 0)<br>(PNP)|V(BR)EBO|6.0<br>−5.0|−<br>−|Vdc|
|Base Cutoff Current<br>(VCE= 30 Vdc, VEB= 3.0 Vdc)<br>(NPN)<br>(VCE= −30 Vdc, VEB= −3.0 Vdc)<br>(PNP)|IBL|−<br>−|50<br>−50|nAdc|
|Collector Cutoff Current<br>(VCE= 30 Vdc, VEB= 3.0 Vdc)<br>(NPN)<br>(VCE= −30 Vdc, VEB= −3.0 Vdc)<br>(PNP)|ICEX|−<br>−|50<br>−50|nAdc|
|**ON CHARACTERISTICS **(Note 2)|||||
|DC Current Gain<br>(IC= 0.1 mAdc, VCE= 1.0 Vdc)<br>(NPN)<br>(IC= 1.0 mAdc, VCE= 1.0 Vdc)<br>(IC= 10 mAdc, VCE= 1.0 Vdc)<br>(IC= 50 mAdc, VCE= 1.0 Vdc)<br>(IC= 100 mAdc, VCE= 1.0 Vdc)<br>(IC= −0.1 mAdc, VCE= −1.0 Vdc)<br>(PNP)<br>(IC= −1.0 mAdc, VCE= −1.0 Vdc)<br>(IC= −10 mAdc, VCE= −1.0 Vdc)<br>(IC= −50 mAdc, VCE= −1.0 Vdc)<br>(IC= −100 mAdc, VCE= −1.0 Vdc)|hFE|40<br>70<br>100<br>60<br>30<br>60<br>80<br>100<br>60<br>30|−<br>−<br>300<br>−<br>−<br>−<br>−<br>300<br>−<br>−|−|
|Collector−Emitter Saturation Voltage<br>(IC= 10 mAdc, IB= 1.0 mAdc)<br>(NPN)<br>(IC= 50 mAdc, IB= 5.0 mAdc)<br>(IC= −10 mAdc, IB= −1.0 mAdc)<br>(PNP)<br>(IC= −50 mAdc, IB= −5.0 mAdc)|VCE(sat)|−<br>−<br>−<br>−|0.2<br>0.3<br>−0.25<br>−0.4|Vdc|
|Base−Emitter Saturation Voltage<br>(IC= 10 mAdc, IB= 1.0 mAdc)<br>(NPN)<br>(IC= 50 mAdc, IB= 5.0 mAdc)<br>(IC= −10 mAdc, IB= −1.0 mAdc)<br>(PNP)<br>(IC= −50 mAdc, IB= −5.0 mAdc)|VBE(sat)|0.65<br>−<br>−0.65<br>−|0.85<br>0.95<br>−0.85<br>−0.95|Vdc|



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**2** 

## **NST3946DXV6** 

## **ELECTRICAL CHARACTERISTICS** (TA = 25 ° C unless otherwise noted) (continued) 

|**ELECTRICAL CHARACTERISTICS**(TA= 25°C unless otherwise noted) (continue|d)||||
|---|---|---|---|---|
|**Characteristic**|**Symbol**|**Min**|**Max**|**Unit**|
|**SMALL-SIGNAL CHARACTERISTICS**|||||
|Current−Gain − Bandwidth Product<br>(IC= 10 mAdc, VCE= 20 Vdc, f = 100 MHz)<br>(NPN)<br>(IC= −10 mAdc, VCE= −20 Vdc, f = 100 MHz)<br>(PNP)|fT|300<br>250|−<br>−|MHz|
|Output Capacitance<br>(VCB= 5.0 Vdc, IE= 0, f = 1.0 MHz)<br>(NPN)<br>(VCB= −5.0 Vdc, IE= 0, f = 1.0 MHz)<br>(PNP)|Cobo|−<br>−|4.0<br>4.5|pF|
|Input Capacitance<br>(VEB= 0.5 Vdc, IC= 0, f = 1.0 MHz)<br>(NPN)<br>(VEB= −0.5 Vdc, IC= 0, f = 1.0 MHz)<br>(PNP)|Cibo|−<br>−|8.0<br>10.0|pF|
|Input Impedance<br>(VCE= 10 Vdc, IC= 1.0 mAdc, f = 1.0 kHz)<br>(NPN)<br>(VCE= −10 Vdc, IC= −1.0 mAdc, f = 1.0 kHz)<br>(PNP)|hie|1.0<br>2.0|10<br>12|kΩ|
|Voltage Feedback Ratio<br>(VCE= 10 Vdc, IC= 1.0 mAdc, f = 1.0 kHz)<br>(NPN)<br>(VCE= −10 Vdc, IC= −1.0 mAdc, f = 1.0 kHz)<br>(PNP)|hre|0.5<br>0.1|8.0<br>10|X 10−4|
|Small−Signal Current Gain<br>(VCE= 10 Vdc, IC= 1.0 mAdc, f = 1.0 kHz)<br>(NPN)<br>(VCE= −10 Vdc, IC= −1.0 mAdc, f = 1.0 kHz)<br>(PNP)|hfe|100<br>100|400<br>400|−|
|Output Admittance<br>(VCE= 10 Vdc, IC= 1.0 mAdc, f = 1.0 kHz)<br>(NPN)<br>(VCE= −10 Vdc, IC= −1.0 mAdc, f = 1.0 kHz)<br>(PNP)|hoe|1.0<br>3.0|40<br>60|�mhos|
|Noise Figure<br>(VCE= 5.0 Vdc, IC= 100�Adc, RS= 1.0 kΩ, f = 1.0 kHz)<br>(NPN)<br>(VCE= −5.0 Vdc, IC= −100�Adc, RS= 1.0 kΩ, f = 1.0 kHz)<br>(PNP)|NF|−<br>−|5.0<br>4.0|dB|
|**SWITCHING CHARACTERISTICS**|||||
|Delay Time<br>(VCC= 3.0 Vdc, VBE= −0.5 Vdc)<br>(NPN)<br>(VCC= −3.0 Vdc, VBE= 0.5 Vdc)<br>(PNP)|td|−<br>−|35<br>35|ns|
|Rise Time<br>(IC= 10 mAdc, IB1= 1.0 mAdc)<br>(NPN)<br>(IC= −10 mAdc, IB1= −1.0 mAdc)<br>(PNP)|tr|−<br>−|35<br>35||
|Storage Time<br>(VCC= 3.0 Vdc, IC= 10 mAdc)<br>(NPN)<br>(VCC= −3.0 Vdc, IC= −10 mAdc)<br>(PNP)|ts|−<br>−|200<br>225|ns|
|Fall Time<br>(IB1= IB2= 1.0 mAdc)<br>(NPN)<br>(IB1= IB2= −1.0 mAdc)<br>(PNP)|tf|−<br>−|50<br>75||



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width ≤ 300 μ s; Duty Cycle ≤ 2.0%. 

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**3** 

**NST3946DXV6** 

## **(NPN)** 

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+3 V +3 V<br>DUTY CYCLE = 2% 10 < t1 < 500 �s t1<br>+10.9 V<br>300 ns +10.9 V 275 DUTY CYCLE = 2% 275<br>10 k 10 k<br>0<br>-�0.5 V<br>< 1 ns Cs < 4 pF* 1N916 Cs < 4 pF*<br>-�9.1 V′<br>< 1 ns<br>**----- End of picture text -----**<br>


* Total shunt capacitance of test jig and connectors 

**Figure 1. Delay and Rise Time Equivalent Test Circuit** 

**Figure 2. Storage and Fall Time Equivalent Test Circuit** 

## **TYPICAL TRANSIENT CHARACTERISTICS** 

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10<br>(NPN)<br>7.0<br>5.0<br>Cibo<br>3.0<br>2.0 Cobo<br>1.0<br>0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 40<br>REVERSE BIAS VOLTAGE (VOLTS)<br>CAPACITANCE (pF)<br>**----- End of picture text -----**<br>


**Figure 3. Capacitance** 

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**4** 

**NST3946DXV6** 

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(NPN)<br>**----- End of picture text -----**<br>


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500 500<br>300 IC/IB = 10 300 VCC = 40 V<br>IC/IB = 10<br>200 200<br>100 100<br>70 tr @ VCC = 3.0 V 70<br>50 50<br>30 30<br>40 V<br>20 20<br>15 V<br>10 10 (NPN)<br>(NPN) 2.0 V<br>7 td @ VOB = 0 V 7<br>5 5<br>1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200<br>IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)<br>Figure 4. Turn-On Time Figure 5. Rise Time<br>500 500<br>′<br>300200 IC/IB = 20 IC/IB = 10 tIB1 s = t= IsB2 -  [1] /8 tf 300200 VIB1CC = I = 40 VB2<br>IC/IB = 20<br>100 100<br>70 70<br>50 IC/IB = 20 50<br>30 IC/IB = 10 30 IC/IB = 10<br>20 20<br>10 (NPN) 10 (NPN)<br>7 7<br>5 5<br>1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200<br>IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)<br>Figure 6. Storage Time Figure 7. Fall Time<br>TYPICAL AUDIO SMALL-SIGNAL CHARACTERISTICS<br>NOISE FIGURE VARIATIONS<br>(VCE = 5.0 Vdc, TA = 25 ° C, Bandwidth = 1.0 Hz)<br>12 14<br>SOURCE RESISTANCE = 200 � f = 1.0 kHz<br>IC = 1.0 mA<br>10 IC = 1.0 mA 12<br>SOURCE RESISTANCE = 200 � 10 IC = 0.5 mA<br>8<br>IC = 0.5 mA IC = 50 �A<br>8<br>6 SOURCE RESISTANCE = 1.0 k IC = 100 �A<br>IC = 50 �A 6<br>4<br>4<br>2 SOURCE RESISTANCE = 500 � 2<br>IC = 100 �A (NPN) (NPN<br>)<br>0 0<br>0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 100 0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 100<br>f, FREQUENCY (kHz) RS, SOURCE RESISTANCE (k OHMS)<br>TIME (ns)<br>r<br>t  , RISE TIME (ns)<br>f<br>t  , FALL TIME (ns)<br>t  , STORAGE TIME (ns)′s<br>NF, NOISE FIGURE (dB) NF, NOISE FIGURE (dB)<br>**----- End of picture text -----**<br>


**Figure 8. Noise Figure** 

**Figure 9. Noise Figure** 

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**5** 

**NST3946DXV6** 

## **(NPN)** 

## **h PARAMETERS** 

(VCE = 10 Vdc, f = 1.0 kHz, TA = 25 ° C) 

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300 100<br>(NPN) 50 (NPN)<br>200<br>20<br>10<br>100<br>70 5<br>50<br>2<br>30 1<br>0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10<br>IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)<br>Figure 10. Current Gain Figure 11. Output Admittance<br>20 10<br>10 (NPN) 7.0 (NPN)<br>5.0<br>5.0<br>3.0<br>2.0<br>2.0<br>1.0<br>1.0<br>0.5<br>0.7<br>0.2 0.5<br>0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10<br>IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)<br>Figure 12. Input Impedance Figure 13. Voltage Feedback Ratio<br>1  � s<br>1000<br>100 ms 1 ms<br>10 ms<br>100<br>1 s<br>(NPN)<br>10<br>Single Pulse Test at TA = 25 ° C<br>1<br>1 10 100<br>VCE, COLLECTOR EMITTER VOLTAGE (V)<br>�<br>fe<br>h    , CURRENT GAIN<br>oe<br>h    , OUTPUT ADMITTANCE (   mhos)<br>-4<br>ie<br>h    , INPUT IMPEDANCE (k OHMS)<br>re<br>h    , VOLTAGE FEEDBACK RATIO (x 10   )<br>, COLLECTOR CURRENT (mA)<br>IC<br>**----- End of picture text -----**<br>


**Figure 14. Safe Operating Area** 

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**6** 

**NST3946DXV6** 

## **(NPN)** 

## **TYPICAL STATIC CHARACTERISTICS** 

**==> picture [481 x 378] intentionally omitted <==**

**----- Start of picture text -----**<br>
2.0<br>TJ = +125°C (NPN) VCE = 1.0 V<br>1.0 +25°C<br>0.7<br>-�55°C<br>0.5<br>0.3<br>0.2<br>0.1<br>0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200<br>IC, COLLECTOR CURRENT (mA)<br>Figure 15. DC Current Gain<br>1.0<br>(NPN) T J  = 25°C<br>0.8<br>IC = 1.0 mA 10 mA 30 mA 100 mA<br>0.6<br>0.4<br>0.2<br>0<br>0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10<br>IB, BASE CURRENT (mA)<br>FE<br>h     , DC CURRENT GAIN (NORMALIZED)<br>CE<br>V     , COLLECTOR EMITTER VOLTAGE (VOLTS)<br>**----- End of picture text -----**<br>


**Figure 16. Collector Saturation Region** 

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**----- Start of picture text -----**<br>
1.2 1.0<br>TJ = 25°C (NPN) (NPN)<br>1.0 VBE(sat) @ IC/IB =10 0.5 +25°C TO +125°C<br>�VC FOR VCE(sat)<br>0.8 0 -�55°C TO +25°C<br>VBE @ VCE =1.0 V<br>0.6 -�0.5<br>-�55°C TO +25°C<br>0.4 -�1.0<br>VCE(sat) @ IC/IB =10 +25°C TO +125°C<br>0.2 -�1.5 �VB FOR VBE(sat)<br>0 -�2.0<br>1.0 2.0 5.0 10 20 50 100 200 0 20 40 60 80 100 120 140 160 180 200<br>IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)<br>°<br>V, VOLTAGE (VOLTS) COEFFICIENT (mV/  C)<br>**----- End of picture text -----**<br>


**Figure 17. “ON” Voltages** 

**Figure 18. Temperature Coefficients** 

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**7** 

**NST3946DXV6** 

## **(PNP)** 

**==> picture [485 x 107] intentionally omitted <==**

**----- Start of picture text -----**<br>
3 V 3 V<br>< 1 ns<br>+9.1 V<br>275 275<br>< 1 ns<br>+0.5 V 10 k 10 k<br>0<br>Cs < 4 pF* 1N916 Cs < 4 pF*<br>10.6 V<br>300 ns 10 < t1 < 500 �s<br>DUTY CYCLE = 2% t1 10.9 V<br>DUTY CYCLE = 2%<br>**----- End of picture text -----**<br>


* Total shunt capacitance of test jig and connectors 

**Figure 19. Delay and Rise Time Equivalent Test Circuit** 

**Figure 20. Storage and Fall Time Equivalent Test Circuit** 

## **TYPICAL TRANSIENT CHARACTERISTICS** 

**==> picture [488 x 405] intentionally omitted <==**

**----- Start of picture text -----**<br>
10<br>(PNP)<br>7.0<br>5.0 Cobo<br>Cibo<br>3.0<br>2.0<br>1.0<br>0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 40<br>REVERSE BIAS (VOLTS)<br>Figure 21. Capacitance<br>TJ = 25°C<br>TJ = 125°C<br>500 500<br>300 (PNP) IC/IB = 10 300 (PNP) VCC = 40 V<br>200 200 IB1 = IB2<br>IC/IB = 20<br>100 100<br>70 70<br>50 tr @ VCC = 3.0 V 50<br>30 15 V 30<br>20 20 IC/IB = 10<br>40 V<br>10 2.0 V 10<br>7 td @ VOB = 0 V 7<br>5 5<br>1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200<br>IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)<br>CAPACITANCE (pF)<br>TIME (ns) f<br>t  , FALL TIME (ns)<br>**----- End of picture text -----**<br>


**Figure 22. Turn-On Time** 

**Figure 23. Fall Time** 

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**8** 

**NST3946DXV6** 

## **(PNP)** 

## **TYPICAL AUDIO SMALL-SIGNAL CHARACTERISTICS NOISE FIGURE VARIATIONS** 

(VCE = −5.0 Vdc, TA = 25 ° C, Bandwidth = 1.0 Hz) 

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**----- Start of picture text -----**<br>
5.0 12<br>SOURCE RESISTANCE = 200 � f = 1.0 kHz IC = 1.0 mA<br>IC = 1.0 mA<br>10<br>4.0<br>SOURCE RESISTANCE = 200 � IC = 0.5 mA<br>IC = 0.5 mA 8<br>3.0<br>SOURCE RESISTANCE = 2.0 k<br>IC = 50 �A 6<br>2.0<br>4 IC = 50 �A<br>1.0 SOURCE RESISTANCE = 2.0 kIC = 100 �A 2 IC = 100 �A<br>(PNP)<br>(PNP)<br>0 0<br>0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 100 0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 100<br>f, FREQUENCY (kHz) Rg, SOURCE RESISTANCE (k OHMS)<br>Figure 24.  Figure 25.<br>h PARAMETERS<br>(VCE = −10 Vdc, f = 1.0 kHz, TA = 25 ° C)<br>300 100<br>(PNP) 70 (PNP)<br>50<br>200<br>30<br>100 20<br>70<br>10<br>50<br>7<br>30 5<br>0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10<br>IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)<br>Figure 26. Current Gain Figure 27. Output Admittance<br>20 10<br>10 (PNP) 7.0 (PNP)<br>7.0 5.0<br>5.0<br>3.0<br>3.0<br>2.0<br>2.0<br>1.0<br>0.7<br>1.0<br>0.5<br>0.7<br>0.3<br>0.2 0.5<br>0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10<br>IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)<br>NF, NOISE FIGURE (dB) NF, NOISE FIGURE (dB)<br>�<br>fe<br>h    , DC CURRENT GAIN<br>oe<br>h    , OUTPUT ADMITTANCE (   mhos)<br>-4<br>ie<br>h    , INPUT IMPEDANCE (k OHMS)<br>re<br>h    , VOLTAGE FEEDBACK RATIO (x 10   )<br>**----- End of picture text -----**<br>


**Figure 28. Input Impedance** 

**Figure 29. Voltage Feedback Ratio** 

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**9** 

**NST3946DXV6** 

## **(PNP)** 

## **TYPICAL STATIC CHARACTERISTICS** 

**==> picture [491 x 595] intentionally omitted <==**

**----- Start of picture text -----**<br>
2.0<br>TJ = +125°C VCE = 1.0 V<br>+25°C<br>1.0<br>0.7<br>-�55°C<br>0.5<br>0.3<br>(PNP)<br>0.2<br>0.1<br>0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200<br>IC, COLLECTOR CURRENT (mA)<br>Figure 30. DC Current Gain<br>1.0<br>(PNP) T J  = 25°C<br>0.8<br>IC = 1.0 mA 10 mA 30 mA 100 mA<br>0.6<br>0.4<br>0.2<br>0<br>0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10<br>IB, BASE CURRENT (mA)<br>Figure 31. Collector Saturation Region<br>1.0 1.0<br>TJ = 25°C VBE(sat) @ IC/IB = 10<br>0.8 VBE @ VCE = 1.0 V 0.5 �VC FOR VCE(sat) +25°C TO +125°C<br>0<br>0.6 -�55°C TO +25°C<br>(PNP) -�0.5 (PNP)<br>0.4 +25°C TO +125°C<br>-�1.0<br>VCE(sat) @ IC/IB = 10 -�55°C TO +25°C<br>0.2<br>-�1.5 �VB FOR VBE(sat)<br>0 -�2.0<br>1.0 2.0 5.0 10 20 50 100 200 0 20 40 60 80 100 120 140 160 180 200<br>IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)<br>FE<br>h     , DC CURRENT GAIN (NORMALIZED)<br>CE<br>V     , COLLECTOR EMITTER VOLTAGE (VOLTS)<br>°<br>V, VOLTAGE (VOLTS)<br>, TEMPERATURE COEFFICIENTS (mV/  C)<br>V<br>�<br>**----- End of picture text -----**<br>


**Figure 32. “ON” Voltages** 

**Figure 33. Temperature Coefficients** 

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**NST3946DXV6** 

**==> picture [242 x 175] intentionally omitted <==**

**----- Start of picture text -----**<br>
1000<br>1  � s<br>100 ms 10 ms 1 ms<br>100<br>1 s<br>(PNP)<br>10<br>Single Pulse Test at TA = 25 ° C<br>1<br>1 10 100<br>VCE, COLLECTOR EMITTER VOLTAGE (V)<br>, COLLECTOR CURRENT (mA)<br>IC<br>**----- End of picture text -----**<br>


**Figure 34. Safe Operating Area** 

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**11** 

**NST3946DXV6** 

## **PACKAGE DIMENSIONS** 

**SOT−563, 6 LEAD** CASE 463A ISSUE F 

NOTES: 

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 

**==> picture [411 x 112] intentionally omitted <==**

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D 2. CONTROLLING DIMENSION: MILLIMETERS<br>−X− A 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD<br>L FINISH THICKNESS. MINIMUM LEAD THICKNESS<br>IS THE MINIMUM THICKNESS OF BASE MATERIAL.<br>6 5 4 MILLIMETERS INCHES<br>−Y−E HE DIMA 0.50 MIN NOM 0.55 MAX 0.60 0.020 MIN 0.021 NOM 0.023 MAX<br>1 2 3 b 0.17 0.22 0.27 0.007 0.009 0.011<br>C 0.08 0.12 0.18 0.003 0.005 0.007<br>me tf =<br>D 1.50 1.60 1.70 0.059 0.062 0.066<br>b 6 5 PL C E 1.10 1.20 1.30 0.043 0.047 0.051<br>e 0.08 (0.003) M X Y Le 0.10 0.5 BSC0.20 0.30 0.004 0.02 BSC0.008 0.012<br>HE 1.50 1.60 1.70 0.059 0.062 0.066<br>**----- End of picture text -----**<br>


## **SOLDERING FOOTPRINT*** 

**==> picture [153 x 170] intentionally omitted <==**

**----- Start of picture text -----**<br>
0.3<br>0.0118<br>i PY<br>0.45<br>0.0177<br>1.0<br>THe 1.35 0.0394 e<br>0.0531<br>Lape<br>a 0.5 | 0.5<br>0.0197 0.0197<br>SCALE 20:1 mm<br>7 inches<br>**----- End of picture text -----**<br>


*For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 

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