# Bipolar Transistor Array, Dual NPN, 40 V, 200 mA, 350 mW ![Product image](https://novapart.co/image/farnell:2317635/) **URL**: https://novapart.co/products/NST3904DP6T5G/bipolar-transistor-array-dual-npn-40-v-200-ma-350 **SKU**: NST3904DP6T5G **Manufacturer**: ONSEMI **Category**: Semiconductors - Discretes || Transistors || Bipolar Transistors || Bipolar Junction Transistor Arrays - BJT **Price**: €0.0320 **Stock**: 10+ **Lead Time**: 78 days (indicative) ## Description Transistor Polarity:Dual NPN; Collector Emitter Voltage V(br)ceo:40V; Power Dissipation Pd:350mW; DC Collector Current:200mA; DC Current Gain hFE:30hFE; Transistor Case Style:SOT-9 ## Specifications | Parameter | Value | |---|---| | Msl | MSL 1 - Unlimited | | Svhc | No SVHC (25-Jun-2025) | | No. Of Pins | 6Pins | | Product Range | - | | Qualification | - | | Transistor Mounting | Surface Mount | | Transistor Polarity | Dual NPN | | Power Dissipation Npn | 350mW | | Power Dissipation Pnp | - | | Transistor Case Style | SOT-963 | | Transition Frequency Npn | 200MHz | | Transition Frequency Pnp | - | | Operating Temperature Max | 150°C | | Dc Current Gain Hfe Min Npn | 30hFE | | Dc Current Gain Hfe Min Pnp | - | | Continuous Collector Current Npn | 200mA | | Continuous Collector Current Pnp | - | | Collector Emitter Voltage Max Npn | 40V | | Collector Emitter Voltage Max Pnp | - | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:2317635/) ## NST3904DP6T5G ## Dual General Purpose Transistor The NST3904DP6T5G device is a spin−off of our popular SOT−23/SOT−323/SOT−563 three−leaded device. It is designed for general purpose amplifier applications and is housed in the SOT−963 six−leaded surface mount package. By putting two discrete devices in one package, this device is ideal for low−power surface mount applications where board space is at a premium. one package, this device is ideal for low−power surface mount **www.onsemi.com** applications where board space is at a premium. **Features** (3) (2) (1) • hFE, 100−300 • Low VCE(sat), ≤ 0.4 V • Reduces Board Space and Component Count Q1 Q2 • NSV Prefix for Automotive and Other Applications Requiring ~~onl~~ Unique Site and Control Change Requirements; AEC−Q101 (4) (5) (6) Qualified and PPAP Capable **NST3904DP6T5G** - These Devices are Pb−Free, Halogen Free and are RoHS Compliant **MAXIMUM RATINGS** **Rating Symbol Value Unit** Collector−Emitter Voltage VCEO 40 Vdc Collector−Base Voltage VCBO 60 Vdc Emitter−Base Voltage VEBO 6.0 Vdc **SOT−963** Collector Current − Continuous IC 200 mAdc **CASE 527AD** Electrostatic Discharge HBM ESD 2 MM Class B ~~=~~ **MARKING DIAGRAM THERMAL CHARACTERISTICS Characteristic (Single Heated) Symbol Max Unit** Total Device Dissipation TA = 25 ° C PD 240 mW E M Derate above 25 ° C (Note 1) 1.9 mW/ ° C Thermal Resistance, Junction-to-Ambient R JA 520 ° C/W 1 (Note 1) E = Device Code Total Device Dissipation TA = 25 ° C PD 280 mW M = Date Code Derate above 25 ° C (Note 2) 2.2 mW/ ° C ~~=~~ Thermal Resistance, Junction-to-Ambient R JA 446 ° C/W (Note 2) **ORDERING INFORMATION Characteristic (Dual Heated) (Note 3) Symbol Max Unit** Total Device Dissipation TA = 25 ° C PD 350 mW **Device Package Shipping**[†] Derate above 25 ° C (Note 1) 2.8 mW/ ° C NST3904DP6T5G SOT−963 8000/Tape & Reel Thermal Resistance, Junction-to-Ambient R JA 357 ° C/W (Pb−Free) (Note 1) NSVT3904DP6T5G SOT−963 8000/Tape & Reel Total Device Dissipation TDerate above 25 ° C (Note 2)A = 25 ° C PD 4203.4 mW/mW ° C (Pb−Free) Thermal Resistance, Junction-to-Ambient R JA 297 ° C/W †For information on tape and reel specifications,including part orientation and tape sizes, please (Note 2) refer to our Tape and Reel Packaging Specifications Junction and Storage Temperature Range TJ, Tstg −55 to ° C Brochure, BRD8011/D. +150 ~~=a~~ Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR−4 @ 100 mm[2] , 1 oz. copper traces, still air. 2. FR−4 @ 500 mm[2] , 1 oz. copper traces, still air. 3. Dual heated values assume total power is sum of two equally powered channels. Publication Order Number: **1** © Semiconductor Components Industries, LLC, 2014 **June, 2017 − Rev. 2** **NST3904DP6/D** ## **NST3904DP6T5G** ## **ELECTRICAL CHARACTERISTICS** (TA = 25 ° C unless otherwise noted) |**ELECTRICAL CHARACTERISTICS**(TA= 25°C unless otherwise noted)|**ELECTRICAL CHARACTERISTICS**(TA= 25°C unless otherwise noted)||||| |---|---|---|---|---|---| |**Characteristic**||**Symbol**|**Min**|**Max**|**Unit**| |**OFF CHARACTERISTICS**|||||| |Collector−Emitter Breakdown Voltage (Note 4) (IC= 1.0 mAdc, IB= 0)||V(BR)CEO|40|−|Vdc| |Collector−Base Breakdown Voltage (IC= 10�Adc, IE= 0)||V(BR)CBO|60|−|Vdc| |Emitter−Base Breakdown Voltage (IE= 10�Adc, IC= 0)||V(BR)EBO|6.0|−|Vdc| |Collector Cutoff Current (VCE= 30 Vdc, VEB= 3.0 Vdc)||ICEX|−|50|nAdc| |**ON CHARACTERISTICS**(Note 4)|||||| |DC Current Gain
(IC= 0.1 mAdc, VCE= 1.0 Vdc)
(IC= 1.0 mAdc, VCE= 1.0 Vdc)
(IC= 10 mAdc, VCE= 1.0 Vdc)
(IC= 50 mAdc, VCE= 1.0 Vdc)
(IC= 100 mAdc, VCE= 1.0 Vdc)||hFE|40
70
100
60
30|−
−
300
−
−|−| |Collector−Emitter Saturation Voltage
(IC= 10 mAdc, IB= 1.0 mAdc)
(IC= 50 mAdc, IB= 5.0 mAdc)||VCE(sat)|−
−|0.2
0.3|Vdc| |Base−Emitter Saturation Voltage
(IC= 10 mAdc, IB= 1.0 mAdc)
(IC= 50 mAdc, IB= 5.0 mAdc)||VBE(sat)|0.65
−|0.85
0.95|Vdc| |**SMALL−SIGNAL CHARACTERISTICS**|||||| |Current−Gain − Bandwidth Product (IC= 10 mAdc, VCE= 20 Vdc, f = 100 MHz)||fT|200|−|MHz| |Output Capacitance (VCB= 5.0 Vdc, IE= 0, f = 1.0 MHz)||Cobo|−|4.0|pF| |Input Capacitance (VEB= 0.5 Vdc, IC= 0, f = 1.0 MHz)||Cibo|−|8.0|pF| |Noise Figure (VCE= 5.0 Vdc, IC= 100�Adc, RS= 1.0 k�, f = 1.0 kHz)||NF|−|5.0|dB| |**SWITCHING CHARACTERISTICS**|||||| |Delay Time|(VCC= 3.0 Vdc, VBE= −0.5 Vdc)|td|−|35|ns| |Rise Time|(IC= 10 mAdc, IB1= 1.0 mAdc)|tr|−|35|| |Storage Time|(VCC= 3.0 Vdc, IC= 10 mAdc)|ts|−|275|ns| |Fall Time|(IB1= IB2= 1.0 mAdc)|tf|−|50|| 4. Pulse Test: Pulse Width ≤ 300 � s; Duty Cycle ≤ 2.0%. **==> picture [488 x 171] intentionally omitted <==** **----- Start of picture text -----**
0.28 400
IC/IB = 10 VCE(sat) = 150 ° C 350 150 ° C (5.0 V)
0.23
300 150 ° C (1.0 V)
0.18 250 25 ° C (5.0 V)
−55 ° C 200 25 ° C (1.0 V)
0.13 25 ° C 150 −55 ° C (5.0 V)
100 −55 ° C (1.0 V)
0.08
50
0.03 0
0.0001 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
, COLLECTOR−EMITTER
, DC CURRENT GAIN (V)
FE
CE(sat) SATURATION VOLTAGE (V) h
V
**----- End of picture text -----**
**Figure 1. Collector Emitter Saturation Voltage vs. Collector Current** **Figure 2. DC Current Gain vs. Collector Current** **www.onsemi.com** **2** **NST3904DP6T5G** **==> picture [490 x 382] intentionally omitted <==** **----- Start of picture text -----**
1.1 1.1
IC/IB = 10 VCE = 2.0 V
1.0 1.0
0.9 0.9
−55 ° C −55 ° C
0.8 0.8
0.7 0.7
25 ° C 25 ° C
0.6 0.6
0.5 0.5
0.4 150 ° C 0.4 150 ° C
0.3 0.3
0.0001 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
Figure 3. Base Emitter Saturation Voltage vs. Figure 4. Base Emitter Turn−On Voltage vs.
Collector Current Collector Current
2.0 8.0
1.8 7.5
1.6 IC = 100 mA 7.0
1.4
80 mA 6.5
1.2
6.0
1.0
0.8 5.5 Cib
60 mA 5.0
0.6
40 mA
0.4 4.5
20 mA
0.2 4.0
0 3.5
0.0001 0.001 0.01 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Ib, BASE CURRENT (A) Veb, EMITTER BASE VOLTAGE (V)
VOLTAGE (V)
, BASE−EMITTER SATURA- TION VOLTAGE (V) , BASE−EMITTER TURN−ON
BE(sat) BE(on)
V V
, COLLECTOR−EMITTER , INPUT CAPACITANCE (pF)
CE(sat) SATURATION VOLTAGE (V) ibo
V C
**----- End of picture text -----**
**Figure 5. Saturation Region** **Figure 6. Input Capacitance** **==> picture [242 x 172] intentionally omitted <==** **----- Start of picture text -----**
3.0
2.5
2.0
1.5
Cob
1.0
0.5
0 5.0 10 15 20 25 30
Vcb, COLLECTOR BASE VOLTAGE (V)
, OUTPUT CAPACITANCE (pF)
obo
C
**----- End of picture text -----**
**Figure 7. Output Capacitance** **www.onsemi.com** **3** MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** **SOT−963** CASE 527AD−01 ISSUE E ## DATE 09 FEB 2010 **SCALE 4:1** NOTES: **==> picture [407 x 204] intentionally omitted <==** **----- Start of picture text -----**
D X A 1.
Y Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS
3.
6 5 4 FINISH THICKNESS. MINIMUM LEAD
E HE BASE MATERIAL.
4.
1 2 3 FLASH, PROTRUSIONS, OR GATE BURRS.
a||4 MILLIMETERS
DIM MIN NOM MAX
TOP VIEW C —> | A 0.34 0.37 0.40
SIDE VIEW b 0.10 0.15 0.20
C 0.07 0.12 0.17
D 0.95 1.00 1.05
e 6X L E 0.75 0.80 0.85
e 0.35 BSC
H E 0.95 1.00 1.05
L 0.19 REF
L2 0.05 0.10 0.15
GENERIC
Et MARKING DIAGRAM*
6X L2 6X b
0.08 X Y
t BOTTOM VIEW o ec o XM
**----- End of picture text -----**
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS |2.|Y14.5M, 1994.
CONTROLLING DIMENSION: MILLIMETERS|Y14.5M, 1994.
CONTROLLING DIMENSION: MILLIMETERS| |---|---|---| |3.
4.
~~|4~~
~~a||44~~|**DIM**
**MIN**
**NOM**
**MAX**
**MILLIMETERS**
MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR GATE BURRS.
~~|4~~
~~a||44~~|| ||**A**
0.34
0.37
0.40|| ||**b**
0.10
0.15
0.20|| ||**C**
0.07
0.12
0.17|| ||**D**
0.95
1.00
1.05|| ||**E**
0.75
0.80
0.85|| ||**e**
0.35 BSC
0.95
1.00
1.05
**HE**
**L**
0.19 REF
**L2**
0.05
0.10
0.15|| - XM - 1 - X = Specific Device Code M = Month Code - STYLE 1: STYLE 2: STYLE 3: PIN 1. EMITTER 1 PIN 1. EMITTER 1 PIN 1. CATHODE 1 2. BASE 1 2. EMITTER2 2. CATHODE 1 3. COLLECTOR 2 3. BASE 2 3. ANODE/ANODE 2 4. EMITTER 2 4. COLLECTOR 2 4. CATHODE 2 5. BASE 2 5. BASE 1 5. CATHODE 2 6. COLLECTOR 1 6. COLLECTOR 1 6. ANODE/ANODE 1 - STYLE 4: STYLE 5: STYLE 6: PIN 1. COLLECTOR PIN 1. CATHODE PIN 1. CATHODE 2. COLLECTOR 2. CATHODE 2. ANODE 3. BASE 3. ANODE 3. CATHODE 4. EMITTER 4. ANODE 4. CATHODE 5. COLLECTOR 5. CATHODE 5. CATHODE 6. COLLECTOR 6. CATHODE 6. CATHODE - STYLE 7: STYLE 8: STYLE 9: PIN 1. CATHODE PIN 1. DRAIN PIN 1. SOURCE 1 2. ANODE 2. DRAIN 2. GATE 1 3. CATHODE 3. GATE 3. DRAIN 2 4. CATHODE 4. SOURCE 4. SOURCE 2 5. ANODE 5. DRAIN 5. GATE 2 6. CATHODE 6. DRAIN 6. DRAIN 1 - *This information is generic. Please refer to device data sheet for actual part marking. - Pb−Free indicator, “G” or microdot “ ”, may or may not be present. **==> picture [124 x 123] intentionally omitted <==** **----- Start of picture text -----**
RECOMMENDED
MOUNTING FOOTPRINT
6X 6X
0.20 “ ie 0.35
PACKAGE
OUTLINE
Oo 1.20
0.35 oe
PITCH
DIMENSIONS: MILLIMETERS
**----- End of picture text -----**
STYLE 10: PIN 1. CATHODE 1 2. N/C 3. CATHODE 2 4. ANODE 2 5. N/C 6. ANODE 1 **DOCUMENT NUMBER: 98AON26456D DESCRIPTION: SOT−963, 1X1, 0.35P** Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. **PAGE 1 OF 1** ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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