# Bipolar Transistor Array, Dual PNP, 30 V, 100 mA ![Product image](https://novapart.co/image/farnell:2724490RL/) **URL**: https://novapart.co/products/NST30010MXV6T1G/bipolar-transistor-array-dual-pnp-30-v-100-ma **SKU**: NST30010MXV6T1G **Manufacturer**: ONSEMI **Category**: Semiconductors - Discretes || Transistors || Bipolar Transistors || Bipolar Junction Transistor Arrays - BJT **Price**: €0.0830 **Stock**: 10+ **Lead Time**: 92 days (indicative) ## Description Transistor Polarity:Dual PNP; Collector Emitter Voltage V(br)ceo:-30V; Power Dissipation Pd:661mW; DC Collector Current:-100mA; DC Current Gain hFE:420hFE; Transistor Case Style:SOT ## Specifications | Parameter | Value | |---|---| | Msl | MSL 1 - Unlimited | | Svhc | No SVHC (25-Jun-2025) | | No. Of Pins | 6Pins | | Product Range | - | | Qualification | - | | Transistor Mounting | Surface Mount | | Transistor Polarity | Dual PNP | | Power Dissipation Npn | - | | Power Dissipation Pnp | 661mW | | Transistor Case Style | SOT-563 | | Transition Frequency Npn | - | | Transition Frequency Pnp | 100MHz | | Operating Temperature Max | 150°C | | Dc Current Gain Hfe Min Npn | - | | Dc Current Gain Hfe Min Pnp | 420hFE | | Continuous Collector Current Npn | - | | Continuous Collector Current Pnp | 100mA | | Collector Emitter Voltage Max Npn | - | | Collector Emitter Voltage Max Pnp | 30V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:2724490RL/) ## NST30010MXV6T1G, NSVT30010MXV6T1G ## Dual Matched General Purpose Transistor ## **PNP Matched Pair** **http://onsemi.com** These transistors are housed in an ultra−small SOT563 package ideally suited for portable products. They are assembled to create a pair of devices highly matched in all parameters, eliminating the need for costly trimming. Applications are Current Mirrors; Differential, Sense and Balanced Amplifiers; Mixers; Detectors and Limiters. ## **Features** **==> picture [44 x 25] intentionally omitted <==** **----- Start of picture text -----**
SOT−563
CASE 463A
PLASTIC
**----- End of picture text -----**
- Current Gain Matching to 10% - Base−Emitter Voltage Matched to 2 mV - Drop−In Replacement for Standard Device - AEC−Q101 Qualified and PPAP Capable - NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements - These are Pb−Free Devices* ## **MAXIMUM RATINGS** |**Rating**
~~=—==s~~|**Symbol**
~~=—==s~~|**Value**
~~=—==s~~|**Unit**
~~=—==s~~| |---|---|---|---| |Collector−Emitter Voltage
~~=—==s~~|VCEO
~~=—==s~~|−30
~~=—==s~~|V
~~=—==s~~| |Collector−Base Voltage
~~=—==s~~|VCBO
~~=—==s~~|−30
~~=—==s~~|V
~~=—==s~~| |Emitter−Base Voltage
~~=—==s~~|VEBO
~~=—==s~~|−5.0
~~=—==s~~|V
~~=—==s~~| |Collector Current − Continuous
~~=—==s~~|IC
~~=—==s~~|−100
~~=—==s~~|mAdc
~~=—==s~~| **==> picture [122 x 195] intentionally omitted <==** **----- Start of picture text -----**
(3) (2) (1)
Q1 Q2
aye
(4) (5) (6)
MARKING DIAGRAMS
UU M
1
UU = Device Code
M = Date Code
= Pb−Free Package
**----- End of picture text -----**
(Note: Microdot may be in either location) ## **ORDERING INFORMATION** |**Device**|**Package**|**Shipping**†| |---|---|---| |NST30010MXV6T1G
SOT−563
(Pb−Free)|SOT−563
(Pb−Free)|4,000 /
Tape & Reel| |NSVT30010MXV6T1G
SOT−563
(Pb−Free)|SOT−563
(Pb−Free)|4,000 /
Tape & Reel| - †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. > *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Publication Order Number: **NST30010MXV6/D** **1**  Semiconductor Components Industries, LLC, 2011 **November, 2011 − Rev. 1** **NST30010MXV6T1G, NSVT30010MXV6T1G** ## **THERMAL CHARACTERISTICS** |**Characteristic**|**Parameter**|**Symbol**|**One Device**
**Heated**|**Both Devices**
**Heated**|**Unit**| |---|---|---|---|---|---| |Total Device Dissipation,
TA= 25C (Note 1)
Derate above 25C (Note 1)
TA= 25C (Note 2)
Derate above 25C (Note 2)|Two Devices Heated Total Package|PD|357
2.9
429
3.4|500 (250 ea)
4.0
661 (331 ea)
5.3|mW
mW/C
mW
mW/C| |Thermal Resistance
Junction-to-Ambient (Note 1)
Junction-to-Ambient (Note 2)|One Heated Device|R�JA|350
291|250
189|C/W| |Thermal Resistance
Junction-to-Ambient (Note 1)
Junction-to-Ambient (Note 2)|Unheated Device Heated by
Heated Device|�JA|149
88|−
−|C/W| |Thermal Resistance
Junction-to-Lead (Note 1)
Junction-to-Lead (Note 2)|Lead Attached to Heated Device|�JL|128
152|76
85|C/W| |Thermal Resistance
Junction-to-Lead (Note 1)
Junction-to-Lead (Note 2)|Heated Device Heating Lead
Attached to Unheated Device|�JL|224
222|−
−|C/W| |Junction and Storage
Temperature Range||TJ, Tstg|−55 to +150||C| 1. PCB with 51 square millimeter of 2 oz (0.070mm thick) copper heat spreading connected to package leads. Mounted on a FR4 PCB 76x76x1.5mm Single layer traces. Natural convection test according to JEDEC 51. 2. PCB with 250 square millimeter of 2 oz (0.070mm thick) copper heat spreading connected to package leads. Mounted on a FR4 PCB 76x76x1.5mm Single layer traces. Natural convection test according to JEDEC 51. ## **ELECTRICAL CHARACTERISTICS** (TA = 25C unless otherwise noted) |**ELECTRICAL CHARACTERISTICS**(TA= 25C unless otherwise noted)|||||| |---|---|---|---|---|---| |**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**| |**OFF CHARACTERISTICS**|||||| |Collector−Emitter Breakdown Voltage, (IC= −10 mA)|V(BR)CEO|−30|−|−|V| |Collector−Emitter Breakdown Voltage, (IC= −10�A, VEB= 0)|V(BR)CES|−30|−|−|V| |Collector−Base Breakdown Voltage, (IC= −10�A)|V(BR)CBO|−30|−|−|V| |Emitter−Base Breakdown Voltage, (IE= −1.0�A)|V(BR)EBO|−5.0|−|−|V| |Collector Cutoff Current (VCB= −30 V)
Collector Cutoff Current(VCB= −30 V, TA= 150C)|ICBO|−
−|−
−|−15
−4.0|nA
�A| |**ON CHARACTERISTICS**|||||| |DC Current Gain
(IC= −10�A, VCE= −5.0 V)
(IC= −2.0 mA, VCE= −5.0 V)
(IC= −2.0 mA, VCE= −5.0 V) (Note 3)|hFE
hFE(1)/hFE(2)|270
420
0.9|−
520
1.0|−
800
−|−| |Collector−Emitter Saturation Voltage
(IC= −10 mA, IB= −0.5 mA)
(IC= −100 mA, IB= −5.0 mA)|VCE(sat)|−
−|−
−|−0.30
−0.60|V| |Base−Emitter Saturation Voltage
(IC= −10 mA, IB= −1.0 mA)
(IC= −100 mA, IB= −10 mA)|VBE(sat)|−
−|−0.75
−0.90|−
−|V| |Base−Emitter On Voltage
(IC= −2.0 mA, VCE= −5.0 V)
(IC= −10 mA, VCE= −5.0 V)
(IC= −2.0 mA, VCE= −5.0 V) (Note 4)|VBE(on)
VBE(1) −VBE(2)|−0.60
−
−|−
−
1.0|−0.75
−0.82
2.0|V
mV| |**SMALL−SIGNAL CHARACTERISTICS**|||||| |Current−Gain − Bandwidth Product, (IC= −10 mA, VCE= −5 Vdc, f = 100 MHz)|fT|100|−|−|MHz| |Output Capacitance, (VCB= −10 V, f = 1.0 MHz)|Cob|−|−|4.5|pF| |Noise Figure, (IC= −0.2 mA, VCE= −5 Vdc, RS= 2 k�, f = 1 kHz, BW = 200Hz)|NF|−|−|10|dB| 3. hFE(1)/hFE(2) is the ratio of one transistor compared to the other transistor within the same package. The smaller hFE is used as numerator. 4. VBE(1) − VBE(2) is the absolute difference of one transistor compared to the other transistor within the same package. **http://onsemi.com** **2** **NST30010MXV6T1G, NSVT30010MXV6T1G** ## **TYPICAL CHARACTERISTICS** **==> picture [492 x 592] intentionally omitted <==** **----- Start of picture text -----**
0.25 4.0
IC/IB = 10 3.5 IC/IB = 100
0.20
3.0
150C 150C
2.5
0.15
25C 2.0
0.10
1.5
25C
−55C 1.0
0.05
0.5
−55C
0 0
0.1 1.0 10 100 0.1 1.0 10 100
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Figure 1. Collector Emitter Saturation Voltage Figure 2. Collector Emitter Saturation Voltage
vs. Collector Current vs. Collector Current
1400 1.2
IC/IB = 10
1200
150C (5.0 V) 1.0 −55C
1000
0.8
800 150C (2.0 V) 25C
0.6
600 25C (5.0 V) 150C
25C (2.0 V) 0.4
400 −55C (5.0 V)
200 −55C (2.0 V) 0.2
0 0
0.1 1.0 10 100 0.1 1.0 10 100
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Figure 3. DC Current Gain vs. Collector Figure 4. Base Emitter Saturation Voltage vs.
Current Collector Current
1.0 3.0
0.9 50 mA IC = 100 mA
−55C 2.5
0.8
0.7 25C
2.0
0.6 20 mA
0.5 1.5
150C 10 mA
0.4
1.0
0.3
0.2
0.5
0.1 VCE = −5.0 V
0 0
0.1 1.0 10 100 0.01 0.1 1.0 10 100
IC, COLLECTOR CURRENT (mA) IB, BASE CURRENT (mA)
, COLLECTOR EMITTER , COLLECTOR EMITTER
CE(sat) SATURATION VOLTAGE (V) CE(sat) SATURATION VOLTAGE (V)
V V
, DC CURRENT GAIN , BASE EMITTER
FE BE(sat)
h V
SATURATION VOLTAGE (V)
VOLTAGE (V) VOLTAGE (V)
, BASE EMITTER TURN−ON , COLLECTOR−EMITTER
CE
V
BE(on)
V
**----- End of picture text -----**
**Figure 5. Base Emitter Turn−On Voltage vs. Collector Current** **Figure 6. Saturation Region @ 25** � **C** **http://onsemi.com** **3** **NST30010MXV6T1G, NSVT30010MXV6T1G** ## **TYPICAL CHARACTERISTICS** **==> picture [238 x 173] intentionally omitted <==** **----- Start of picture text -----**
14
12 Cibo (pF)
10
8
6
4
2
0
0 1 2 3 4 5 6
VEB, EMITTER BASE VOLTAGE (V)
, INPUT CAPACITANCE (pF)
ibo
C
**----- End of picture text -----**
**Figure 7. Input Capacitance** **==> picture [232 x 173] intentionally omitted <==** **----- Start of picture text -----**
7
6 Cobo (pF)
5
4
3
2
1
0
0 5 10 15 20 25
VCB, COLLECTOR BASE VOLTAGE (V)
, OUTPUT CAPACITANCE (pF)
obo
C
**----- End of picture text -----**
**Figure 8. Output Capacitance** **http://onsemi.com** **4** MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** **==> picture [32 x 23] intentionally omitted <==** **----- Start of picture text -----**
6
1
**----- End of picture text -----**
## **SOT−563, 6 LEAD** CASE 463A ISSUE H ## DATE 26 JAN 2021 **==> picture [42 x 7] intentionally omitted <==** **----- Start of picture text -----**
SCALE 4:1
**----- End of picture text -----**
## **DOCUMENT NUMBER:** ## **98AON11126D** ## **DESCRIPTION: SOT−563, 6 LEAD** Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. **PAGE 1 OF 2** ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. www.onsemi.com © Semiconductor Components Industries, LLC, 2019 ## **SOT−563, 6 LEAD** CASE 463A ISSUE H ## DATE 26 JAN 2021 ## **GENERIC MARKING DIAGRAM*** XX M 1 XX = Specific Device Code M = Month Code . = Pb−Free Package - *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ " ”, may or may not be present. Some products may not follow the Generic Marking. ## **DOCUMENT NUMBER:** **98AON11126D** **DESCRIPTION: SOT−563, 6 LEAD** Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. **PAGE 2 OF 2** ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. www.onsemi.com © Semiconductor Components Industries, LLC, 2019 **onsemi** , , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “ **onsemi** ” or its affiliates and/or subsidiaries in the United States and/or other countries. **onsemi** owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. 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Buyer is responsible for its products and applications using **onsemi** products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by **onsemi** . “Typical” parameters which may be provided in **onsemi** data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. **onsemi** does not convey any license under any of its intellectual property rights nor the rights of others. **onsemi** products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. 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