# Bipolar (BJT) Single Transistor, Low VCE (Sat), NPN, 60 V, 6 A, 710 mW, SOT-223, Surface Mount ![Product image](https://novapart.co/image/farnell:2442170/) **URL**: https://novapart.co/products/NSS60601MZ4T1G/bipolar-bjt-single-transistor-low-vce-sat-npn-60-v **SKU**: NSS60601MZ4T1G **Manufacturer**: ONSEMI **Category**: Semiconductors - Discretes || Transistors || Bipolar Transistors || Single Bipolar Junction Transistors - BJT **Price**: €0.2240 **Stock**: 10+ **Lead Time**: 89 days (indicative) ## Description Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:60V; Transition Frequency ft:100MHz; Power Dissipation Pd:710mW; DC Collector Current:6A; DC Current Gain hFE:50hFE; Tra ## Specifications | Parameter | Value | |---|---| | Msl | MSL 1 - Unlimited | | Svhc | Lead (25-Jun-2025) | | No. Of Pins | 4Pins | | Product Range | - | | Qualification | - | | Power Dissipation | 710mW | | Transistor Mounting | Surface Mount | | Transistor Polarity | NPN | | Transition Frequency | 100MHz | | Transistor Case Style | SOT-223 | | Dc Current Gain Hfe Min | 50hFE | | Operating Temperature Max | 150°C | | Continuous Collector Current | 6A | | Collector Emitter Voltage Max | 60V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:2442170/) ## NSS60601MZ4 ## Transistor , Low VCE(sat) NPN, 60 V, 6.0 A ON Semiconductor’s e[2] PowerEdge family of low VCE(sat) transistors are surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. ## **http://onsemi.com** **60 VOLTS, 6.0 AMPS 2.0 WATTS NPN LOW V TRANSISTOR CE(sat) EQUIVALENT RDS(on) 50 m** Typical applications are DC−DC converters and power management in portable and battery powered products such as cellular and cordless phones, PDAs, computers, printers, digital cameras and MP3 players. Other applications are low voltage motor controls in mass storage products such as disc drives and tape drives. In the automotive industry they can be used in air bag deployment and in the instrument cluster. The high current gain allows e[[2]] PowerEdge devices to be driven directly from PMU’s control outputs, and the Linear Gain (Beta) makes them ideal components in analog amplifiers. 4 industry they can be used in air bag deployment and in the instrument cluster. The high current gain allows e[[2]] PowerEdge devices to be 1 2 driven directly from PMU’s control outputs, and the Linear Gain 3 (Beta) makes them ideal components in analog amplifiers. **SOT−223 CASE 318E Features STYLE 1** • NSV Prefix for Automotive and Other Applications Requiring C 2, 4 Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant* • ~~é~~ Complementary to NSS60600MZ4 B 1 E 3 **MAXIMUM RATINGS** (TA = 25 ° C) **Schematic Rating Symbol Max Unit MARKING DIAGRAM** Collector-Emitter Voltage VCEO 60 Vdc Collector-Base Voltage VCBO 100 Vdc AYW Emitter-Base Voltage VEBO 6.0 Vdc 60601 Collector Current − Continuous IC 6.0 A 1 Collector Current − Peak ICM 12.0 A A = Assembly Location ~~oe~~ Y = Year Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended W = Work Week Operating Conditions is not implied. Extended exposure to stresses above the 60601 = Specific Device Code Recommended Operating Conditions may affect device reliability. = Pb−Free Package ## **PIN ASSIGNMENT** 4 C B C E S 1 2 3 Top View Pinout > *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ## **ORDERING INFORMATION** See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. Publication Order Number: **NSS60601MZ4/D** **1** © Semiconductor Components Industries, LLC, 2013 **August, 2013 − Rev. 5** **NSS60601MZ4** ## **THERMAL CHARACTERISTICS** |**THERMAL CHARACTERISTICS**|||| |---|---|---|---| |**Characteristic**|**Symbol**|**Max**|**Unit**| |Total Device Dissipation
TA= 25°C
Derate above 25°C|PD(Note 1)|800
6.5|mW
mW/°C| |Thermal Resistance,
Junction−to−Ambient|R�JA(Note 1)|155|°C/W| |Total Device Dissipation
TA= 25°C
Derate above 25°C|PD(Note 2)|2
15.6|W
mW/°C| |Thermal Resistance,
Junction−to−Ambient|R�JA(Note 2)|64|°C/W| |Total Device Dissipation
(Single Pulse < 10 sec.)|PDsingle
(Note 3)|710|mW| |Junction and Storage Temperature Range|TJ, Tstg|−55 to +150|°C| 1. FR−4 @ 7.6 mm[2] , 1 oz. copper traces. 2. FR−4 @ 645 mm[2] , 1 oz. copper traces. 3. Thermal response. ## **ORDERING INFORMATION** |**ORDERING INFORMATION**||| |---|---|---| |**Device**|**Package**|**Shipping**†| |NSS60601MZ4T1G|SOT−223
(Pb−Free)|1,000 / Tape & Reel| |NSV60601MZ4T1G*|SOT−223
(Pb−Free)|1,000 / Tape & Reel| |NSS60601MZ4T3G|SOT−223
(Pb−Free)|4,000 / Tape & Reel| |NSV60601MZ4T3G*|SOT−223
(Pb−Free)|4,000 / Tape & Reel| †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable. **http://onsemi.com 2** ## **NSS60601MZ4** ## **ELECTRICAL CHARACTERISTICS** (TA = 25 ° C unless otherwise noted) |**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**| |---|---|---|---|---|---| |**OFF CHARACTERISTICS**|||||| |Collector−Emitter Breakdown Voltage
(IC= 10 mAdc, IB= 0)|V(BR)CEO|60|−|−|Vdc| |Collector−Base Breakdown Voltage
(IC= 0.1 mAdc, IE= 0)|V(BR)CBO|100|−|−|Vdc| |Emitter−Base Breakdown Voltage
(IE= 0.1 mAdc, IC= 0)|V(BR)EBO|6.0|−|−|Vdc| |Collector Cutoff Current
(VCB= 100 Vdc, IE= 0)|ICBO|−|−|0.1|�Adc| |Emitter Cutoff Current
(VEB= 6.0 Vdc)|IEBO|−|−|0.1|�Adc| |**ON CHARACTERISTICS**|||||| |DC Current Gain (Note 4)
(IC= 500 mA, VCE= 2.0 V)
(IC= 1.0 A, VCE= 2.0 V)
(IC= 2.0 A, VCE= 2.0 V)
(IC= 6.0 A, VCE= 2.0 V)|hFE|150
120
100
50|−
−
−
−|−
360
−
−|−| |Collector−Emitter Saturation Voltage (Note 4)
(IC= 0.1 A, IB= 2.0 mA)
(IC= 1.0 A, IB= 0.100 A)
(IC= 2.0 A, IB= 0.200 A)
(IC= 3.0 A, IB= 60 mA)
(IC= 6.0 A, IB= 0.6 A)|VCE(sat)|−
−
−
−
−|−
0.045
0.085
−
−|0.040
0.060
0.100
0.220
0.300|V| |Base−Emitter Saturation Voltage (Note 4)
(IC= 1.0 A, IB= 0.1 A)|VBE(sat)|−|−|0.900|V| |Base−Emitter Turn−on Voltage (Note 4)
(IC= 1.0 A, VCE= 2.0 V)|VBE(on)|−|−|0.900|V| |Cutoff Frequency
(IC= 500 mA, VCE= 10 V, f = 1.0 MHz)|fT|100|−|−|MHz| |Input Capacitance (VEB= 5.0 V, f = 1.0 MHz)|Cibo|−|400|−|pF| |Output Capacitance (VCB= 10 V, f = 1.0 MHz)|Cobo|−|37|−|pF| |**SWITCHING CHARACTERISTICS**|||||| |Delay (VCC= 30 V, IC= 750 mA, IB1= 15 mA)|td|−|85|−|ns| |Rise (VCC= 30 V, IC= 750 mA, IB1= 15 mA)|tr|−|115|−|ns| |Storage (VCC= 30 V, IC= 750 mA, IB1= 15 mA)|ts|−|1350|−|ns| |Fall (VCC= 30 V, IC= 750 mA, IB1= 15 mA)|tf|−|125|−|ns| 4. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%. **==> picture [243 x 175] intentionally omitted <==** **----- Start of picture text -----**
2.5
2.0
TC
1.5
1.0
TA
0.5
0
25 50 75 100 125 150
TJ, TEMPERATURE ( ° C)
, POWER DISSIPATION (W)
D
P
**----- End of picture text -----**
**Figure 1. Power Derating** **http://onsemi.com** **3** **NSS60601MZ4** ## **TYPICAL CHARACTERISTICS** **==> picture [494 x 593] intentionally omitted <==** **----- Start of picture text -----**
400 400
VCE = 2 V VCE = 4 V
350 350
150 ° C 150 ° C
300 300
250 250
25 ° C 25 ° C
200 200
150 −55 ° C 150 −55 ° C
100 100
50 50
0 0
0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
Figure 2. DC Current Gain Figure 3. DC Current Gain
1 1
IC/IB = 10 IC/IB = 50
25 ° C 150 ° C 25 ° C
0.1
−55 ° C
0.1 °
150 C
−55 ° C
0.01
0.001 0.01
0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
Figure 4. Collector−Emitter Saturation Voltage Figure 5. Collector−Emitter Saturation Voltage
1 1.2
VCE = 2 V
IC = 6 A 1
−55 ° C
0.8
4 A 25 ° C
0.1 3 A 0.6
2 A
0.5 A 0.4 150 ° C
1 A
0.2
0.1 A
0.01 0
0.0001 0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10
IB, BASE CURRENT (A) IC, COLLECTOR CURRENT (A)
, DC CURRENT GAIN , DC CURRENT GAIN
FE FE
h h
, COLLECTOR−EMITTER , COLLECTOR−EMITTER
SATURATION VOLTAGE (V) SATURATION VOLTAGE (V)
CE(sat) CE(sat)
V V
, COLLECTOR−EMITTER
, EMITTER−BASE VOLTAGE (V)
SATURATION VOLTAGE (V)
CE(sat)
V
BE(on)
V
**----- End of picture text -----**
**Figure 6. Collector Saturation Region** **Figure 7. VBE(on) Voltage** **http://onsemi.com** **4** **NSS60601MZ4** ## **TYPICAL CHARACTERISTICS** **==> picture [495 x 610] intentionally omitted <==** **----- Start of picture text -----**
1.2 1.2
IC/IB = 10 IC/IB = 50
1 1
−55 ° C −55 ° C
0.8 0.8
25 ° C
25 ° C
0.6 0.6
150 ° C
150 ° C
0.4 0.4
0.2 0.2
0 0
0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
Figure 8. Base−Emitter Saturation Voltage Figure 9. Base−Emitter Saturation Voltage
900 140
800 TJ = 25 ° C TJ = 25 ° C
ftest = 1 MHz 120 ftest = 1 MHz
700
100
600
500 80
400 60
300
40
200
20
100
0 0
0 1 2 3 4 5 6 7 8 0 10 20 30 40 50 60 70 80 90 10
VEB, EMITTER BASE VOLTAGE (V) VCB, COLLECTOR BASE VOLTAGE (V)
Figure 10. Input Capacitance Figure 11. Output Capacitance
1000 100
TA = 25 ° C
VCE = 10 V
10 0.5 ms
100 1 ms
1
10 ms
10 100 ms
0.1
1 0.01
0.001 0.01 0.1 1 10 1 10 100
IC, COLLECTOR CURRENT (A) VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 12. Current−Gain Bandwidth Product Figure 13. Safe Operating Area
, EMITTER−BASE , EMITTER−BASE
BE(sat) BE(sat)
V V
SATURATION VOLTAGE (V) SATURATION VOLTAGE (V)
, INPUT CAPACITANCE (pF)
, OUTPUT CAPACITANCE (pF)
ibo
C obo
C
PRODUCT (MHz)
, CURRENT BANDWIDTH
fTau , COLLECTOR CURRENT (A)IC
**----- End of picture text -----**
**http://onsemi.com** **5** MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** **SOT−223 (TO−261)** CASE 318E−04 ISSUE R **SCALE 1:1** ## DATE 02 OCT 2018 **DOCUMENT NUMBER: 98ASB42680B** **DESCRIPTION: SOT−223 (TO−261)** Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. **PAGE 1 OF 2** ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. www.onsemi.com © Semiconductor Components Industries, LLC, 2018 DATE 02 OCT 2018 ## **SOT−223 (TO−261)** CASE 318E−04 ISSUE R STYLE 1: STYLE 2: STYLE 3: STYLE 4: STYLE 5: PIN 1. BASE PIN 1. ANODE PIN 1. GATE PIN 1. SOURCE PIN 1. DRAIN 2. COLLECTOR 2. CATHODE 2. DRAIN 2. DRAIN 2. GATE 3. EMITTER 3. NC 3. SOURCE 3. GATE 3. SOURCE 4. COLLECTOR 4. CATHODE 4. DRAIN 4. DRAIN 4. GATE STYLE 6: STYLE 7: STYLE 8: STYLE 9: STYLE 10: PIN 1. RETURN PIN 1. ANODE 1 CANCELLED PIN 1. INPUT PIN 1. CATHODE 2. INPUT 2. CATHODE 2. GROUND 2. ANODE 3. OUTPUT 3. ANODE 2 3. LOGIC 3. GATE 4. INPUT 4. CATHODE 4. GROUND 4. ANODE STYLE 11: STYLE 12: STYLE 13: PIN 1. MT 1 PIN 1. INPUT PIN 1. GATE 2. MT 2 2. OUTPUT 2. COLLECTOR 3. GATE 3. NC 3. EMITTER 4. MT 2 4. OUTPUT 4. COLLECTOR **GENERIC MARKING DIAGRAM*** AYW XXXXX 1 ~~|~~ A = Assembly Location Y = Year W = Work Week XXXXX = Specific Device Code = Pb−Free Package (Note: Microdot may be in either location) *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ ”, may or may not be present. Some products may not follow the Generic Marking. Electronic versions are uncontrolled except when accessed directly from the Document Repository. **DOCUMENT NUMBER: 98ASB42680B** Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. **DESCRIPTION: SOT−223 (TO−261) PAGE 2 OF 2** ~~—ee~~ ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. www.onsemi.com © Semiconductor Components Industries, LLC, 2018 **onsemi** , , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “ **onsemi** ” or its affiliates and/or subsidiaries in the United States and/or other countries. **onsemi** owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of **onsemi** ’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. **onsemi** reserves the right to make changes at any time to any products or information herein, without notice. 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