# Bipolar Transistor Array, Dual NPN, 60 V, 1 A, 2.27 W
**URL**: https://novapart.co/products/NSS60101DMTTBG/bipolar-transistor-array-dual-npn-60-v-1-a-227-w
**SKU**: NSS60101DMTTBG
**Manufacturer**: ONSEMI
**Category**: Semiconductors - Discretes || Transistors || Bipolar Transistors || Bipolar Junction Transistor Arrays - BJT
**Price**: €0.1650
**Stock**: 10+
**Lead Time**: 113 days (indicative)
## Description
Transistor Polarity:Dual NPN; Collector Emitter Voltage V(br)ceo:60V; Power Dissipation Pd:2.27W; DC Collector Current:1A; DC Current Gain hFE:35hFE; Transistor Case Style:WDFN; No.
## Specifications
| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 6Pins |
| Product Range | - |
| Qualification | - |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | Dual NPN |
| Power Dissipation Npn | 2.27W |
| Power Dissipation Pnp | - |
| Transistor Case Style | WDFN |
| Transition Frequency Npn | 180MHz |
| Transition Frequency Pnp | - |
| Operating Temperature Max | 150°C |
| Dc Current Gain Hfe Min Npn | 35hFE |
| Dc Current Gain Hfe Min Pnp | - |
| Continuous Collector Current Npn | 1A |
| Continuous Collector Current Pnp | - |
| Collector Emitter Voltage Max Npn | 60V |
| Collector Emitter Voltage Max Pnp | - |
## Datasheet
📄 [Download PDF](https://novapart.co/datasheet/farnell:2728020RL/)
**DATA SHEET www.onsemi.com**
## Low V NPN Transistors CE(sat) 60 V, 1 A
## NSS60101DMT
**onsemi** ’s e[2] PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important.
Typical applications are DC−DC converters and LED lightning, power management…etc. In the automotive industry they can be used in air bag deployment and in the instrument cluster. The high current gain allows e[2] PowerEdge devices to be driven directly from PMU’s control outputs, and the Linear Gain (Beta) makes them ideal components in analog amplifiers.
## **Features**
- NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
- NSV60101DMTWTBG − Wettable Flanks Device
- These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
## **MAXIMUM RATINGS** (TA = 25 ° C)
|**MAXIMUM RATINGS**(TA= 25°C)||||
|---|---|---|---|
|**Rating**|**Symbol**|**Max**|**Unit**|
|Collector−Emitter Voltage|VCEO|60|Vdc|
|Collector−Base Voltage|VCBO|60|Vdc|
|Emitter−Base Voltage|VEBO|6|Vdc|
|Collector Current − Continuous|IC|1|A|
|Collector Current − Peak|ICM|2|A|
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
## **THERMAL CHARACTERISTICS**
|**THERMAL CHARACTERISTICS**||||
|---|---|---|---|
|**Characteristic**|**Symbol**|**Max**|**Unit**|
|Thermal Resistance Junction−to−Ambient
(Notes 1 and 2)|R�JA|55|°C/W|
|Total Power Dissipation per Package @
TA= 25°C (Note 2)|PD|2.27|W|
|Thermal Resistance Junction−to−Ambient
(Note 3)|R�JA|69|°C/W|
|Power Dissipation per Transistor @ TA= 25°C
(Note 3)|PD|1.8|W|
|Junction and Storage Temperature Range|TJ, Tstg|−55 to
+150|°C|
## **60 Volt, 1 Amp**
## **NPN Low V Transistors CE(sat)**
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**----- Start of picture text -----**
MARKING
DIAGRAM
1 6
WDFN6 AN M �
2 5
CASE 506AN �
3 4
1
AN = Specific Device Code
M = Date Code
� = Pb−Free Package
(Note: Microdot may be in either location)
**----- End of picture text -----**
## **PIN CONNECTIONS**
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**----- Start of picture text -----**
6 1
7
5 2
8
4 3
6,7 1
5 2
4 3,8
**----- End of picture text -----**
## **ORDERING INFORMATION**
|**Device**|**Package**|**Shipping**†|
|---|---|---|
|NSS60101DMTTBG|WDFN6
(Pb−Free)|3000/Tape &
Reel|
|NSV60101DMTWTBG|WDFN6
(Pb−Free)|3000/Tape &
Reel|
- †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.
1. Per JESD51−7 with 100 mm[2] pad area and 2 oz. Cu (Dual Operation).
2. PD per Transistor when both are turned on is one half of Total PD or 1.13 Watts.
3. Per JESD51−7 with 100 mm[2] pad area and 2 oz. Cu (Single−Operation).
Publication Order Number:
**1**
© Semiconductor Components Industries, LLC, 2016 **January, 2022 − Rev. 3**
**NSS60101DMT/D**
**NSS60101DMT**
**Table 1. ELECTRICAL CHARACTERISTICS** (TA = 25 ° C unless otherwise noted)
|**Table 1. ELECTRICAL CHARACTERISTICS**(TA= 25°C unless other|wise noted)|||||
|---|---|---|---|---|---|
|**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|
|**OFF CHARACTERISTICS**||||||
|Collector−Emitter Breakdown Voltage (IC= 10 mA, IB= 0)|V(BR)CEO|60|||V|
|Collector−Base Breakdown Voltage (Ic = 0.1 mA, IE= 0)|V(BR)CBO|80|||V|
|Emitter−Base Breakdown Voltage (IE= 0.1 mA, IC= 0)|V(BR)EBO|6|||V|
|Collector Cutoff Current (VCB= 60 V, IE= 0)|ICBO|||100|nA|
|Emitter Cutoff Current (VBE= 5.0 V)|IEBO|||100|nA|
|**ON CHARACTERISTICS**||||||
|DC Current Gain (Note 4)
(IC= 100 mA, VCE= 2.0 V)
(IC= 500 mA, VCE= 2.0 V)
(IC= 1 A, VCE= 2.0 V)
(IC= 2 A, VCE= 2.0 V|hFE|150
120
90
35|250
240
180
55|||
|Collector−Emitter Saturation Voltage (Note 4)
(IC= 500 mA, IB= 50 mA)
(IC= 1 A, IB= 50 mA)
(IC= 1 A, IB= 100 mA)|VCE(sat)||0.063
0.130
0.115|0.100
0.200
0.180|V|
|Base�Emitter Saturation Voltage (Note 4)
(IC= 500 mA, IB= 50 mA)
(IC= 1 A, IB= 50 mA)
(IC= 1 A, IB= 100 mA)|VBE(sat)|||1.0
1.0
1.1|V|
|Base−Emitter Turn−on Voltage (Note 4)
(IC= 500 mA, VCE= 2 V)|VBE(on)|||0.9|V|
|**DYNAMIC CHARACTERISTICS**||||||
|Output Capacitance
(VCB= 10 V, f = 1.0 MHz)|Cobo||10||pF|
|Cutoff Frequency
(IC= 50 mA, VCE= 2.0 V, f = 100 MHz)|fT||180||MHz|
|**SWITCHING TIMES**||||||
|Delay Time (VCC= 10 V, IC= 0.5 A, IB1= 25 mA, IB2= −25 mA)|td||13||ns|
|Rise Time (VCC= 10 V, IC= 0.5 A, IB1= 25 mA, IB2= −25 mA)|tr||18||ns|
|Storage Time (VCC= 10 V, IC= 0.5 A, IB1= 25 mA, IB2= −25 mA)|ts||700||ns|
|Fall Time (VCC= 10 V, IC= 0.5 A, IB1= 25 mA, IB2= −25 mA)|tf||80||ns|
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Condition: Pulse Width = 300 � sec, Duty Cycle ≤ 2%
**www.onsemi.com**
**2**
**NSS60101DMT**
## **TYPICAL CHARACTERISTICS**
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450 450
400 150 ° C VCE = 2 V 400 150 ° C VCE = 5 V
350 100 ° C 350 100 ° C
300 300
25 ° C 25 ° C
250 250
200 200
150 −55 ° C 150 −55 ° C
100 100
50 50
0 0
0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
Figure 1. DC Current Gain Figure 2. DC Current Gain
2.2 1
18 mA IB = 20 mA
2.0
16 mA
1.8
1.6 14 mA 10 mA 150 ° C
12 mA
1.4 8.0 mA 100 ° C
1.2
1.0 6.0 mA 0.1 −55 ° C
0.8 4.0 mA 25 ° C
0.6
0.4 2.0 mA
I C /I B = 50
0.2
0 0.01
0 1 2 3 4 5 6 0.001 0.01 0.1 1 10
VCE, COLLECTOR EMITTER VOLTAGE (V) IC, COLLECTOR CURRENT (A)
Figure 3. Collector Current as a Function of Figure 4. Collector−Emitter Saturation Voltage
Collector Emitter Voltage
1
150 ° C 1.0
−55 ° C
−55 ° C 25 ° C 25 ° C
0.1 100 ° C 0.5 100 ° C
150 ° C
IC/IB = 100 IC/IB = 20
0.01 0
0.001 0.01 0.1 1 0.001 0.01 0.1 1 10
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
, DC CURRENT GAIN , DC CURRENT GAIN
FE FE
h h
, COLLECTOR CURRENT (A) , COLLECTOR−EMITTER SATURATION (V)
IC VCE(sat)
, BASE−EMITTER
, COLLECTOR−EMITTER SATURATION (V) SATURATION (V)
BE(sat)
V
CE(sat)
V
**----- End of picture text -----**
**Figure 5. Collector−Emitter Saturation Voltage**
**Figure 6. Base−Emitter Saturation Voltage**
**www.onsemi.com**
**3**
**NSS60101DMT**
## **TYPICAL CHARACTERISTICS**
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**----- Start of picture text -----**
1.2 1.0
0.9 TA = 25 ° C
1.0
0.8
−55 ° C 0.7
0.8
0.6
25 ° C
0.6 0.5
IC = 2.0 A
100 ° C 0.4
0.4 150 ° C 0.3 I C = 1.0 A
0.2
0.2 VCE = 2 V 0.1 I C = 0.1 A I C = 0.5 A
0 0
0.001 0.01 0.1 1 10 0.0001 0.001 0.01 0.1 1
IC, COLLECTOR CURRENT (A) IB, BASE CURRENT (A)
Figure 7. Base−Emitter “ON” Voltage Figure 8. Collector Saturation Region
240 40
200 TA = 25 ° C 35 T f = 1 MHz A = 25 ° C
f = 1 MHz 30
25
160
20
120
15
10
80
5
40 0
0 1 2 3 4 5 6 7 0 5 10 15 20 25 30
VEB, BASE−EMITTER VOLTAGE (A) VCB, COLLECTOR−BASE REVERSE VOLTAGE (V)
Figure 9. Input Capacitance Figure 10. Output Capacitance
1000 2.5
TJ = 25 ° C
VCE = 2 V
f test = 100 MHz 2.0
1.5
100
1.0
0.5
10 0
1 10 100 1000 0 25 50 75 100 125 150
IC, COLLECTOR CURRENT (mA) TEMPERATURE ( ° C)
, COLLECTOR−EMITTER SATURATION (V)
, BASE−EMITTER VOLTAGE (V)
CE(sat)
V
BE(on)
V
, INPUT CAPACITANCE (pF) , OUTPUT CAPACITANCE (pF)
Cibo obo
C
, POWER DISSIPATION (W)
D
P
, CURRENT GAIN BANDWIDTH PRODUCT (MHz)
fT
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**Figure 11. fT, Current Gain Bandwidth Product**
**Figure 12. Power Derating**
**www.onsemi.com**
**4**
**NSS60101DMT**
## **TYPICAL CHARACTERISTICS**
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**----- Start of picture text -----**
100
Duty Cycle = 0.5
0.20
10 0.10
0.05
0.02
1 0.01
Single Pulse
0.1
0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
t, PULSE TIME (sec)
Figure 13. Thermal Resistance by Transistor
100
Duty Cycle = 0.5
0.20
10
0.10
0.05
0.02
1
0.01
Single Pulse
0.1
0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
t, PULSE TIME (sec)
C/W)
°
RESISTANCE (
R(t), EFFECTIVE TRANSIENT THERMAL
C/W)
°
RESISTANCE (
R(t), EFFECTIVE TRANSIENT THERMAL
**----- End of picture text -----**
**Figure 14. Thermal Resistance for Both Transistors**
**www.onsemi.com**
**5**
MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS**
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WDFN6 2x2, 0.65P
CASE 506AN
ISSUE H
DATE 25 JAN 2022
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**GENERIC MARKING DIAGRAM*** 1 XX M XX = Specific Device Code M = Date Code
*This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ � ”, may or may not be present. Some products may not follow the Generic Marking.
## **DOCUMENT NUMBER: 98AON20861D**
**DESCRIPTION: WDFN6 2x2, 0.65P**
Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
**PAGE 1 OF 1**
**onsemi** and are trademarks of Semiconductor Components Industries, LLC dba **onsemi** or its subsidiaries in the United States and/or other countries. **onsemi** reserves the right to make changes without further notice to any products herein. **onsemi** makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. **onsemi** does not convey any license under its patent rights nor the rights of others.
www.onsemi.com
© Semiconductor Components Industries, LLC, 2013
**onsemi** , , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “ **onsemi** ” or its affiliates and/or subsidiaries in the United States and/or other countries. **onsemi** owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of **onsemi** ’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. **onsemi** reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and **onsemi** makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using **onsemi** products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by **onsemi** . “Typical” parameters which may be provided in **onsemi** data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. **onsemi** does not convey any license under any of its intellectual property rights nor the rights of others. **onsemi** products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use **onsemi** products for any such unintended or unauthorized application, Buyer shall indemnify and hold **onsemi** and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that **onsemi** was negligent regarding the design or manufacture of the part. **onsemi** is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
## **PUBLICATION ORDERING INFORMATION**
**LITERATURE FULFILLMENT** : **TECHNICAL SUPPORT Email Requests to:** orderlit@onsemi.com **North American Technical Support: Europe, Middle East and Africa Technical Support:** Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 00421 33 790 2910 **onsemi Website:** www.onsemi.com Phone: 011 421 33 790 2910 For additional information, please contact your local Sales Representative
◊
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## Links
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