# Bipolar Transistor Array, Complementary NPN and PNP, 40 V, 40 V, 3 A, 3 A, 783 mW ![Product image](https://novapart.co/image/farnell:2774845/) **URL**: https://novapart.co/products/NSS40302PDR2G/bipolar-transistor-array-complementary-npn-and-pnp **SKU**: NSS40302PDR2G **Manufacturer**: ONSEMI **Category**: Semiconductors - Discretes || Transistors || Bipolar Transistors || Bipolar Junction Transistor Arrays - BJT **Price**: €0.3750 **Stock**: 1000+ **Lead Time**: 78 days (indicative) ## Description Transistor Polarity:NPN, PNP; Collector Emitter Voltage V(br)ceo:40V; Power Dissipation Pd:783mW; DC Collector Current:3A; DC Current Gain hFE:200hFE; Transistor Case Style:SOIC; No. ## Specifications | Parameter | Value | |---|---| | Msl | MSL 1 - Unlimited | | Svhc | No SVHC (25-Jun-2025) | | No. Of Pins | 8Pins | | Product Range | - | | Qualification | - | | Transistor Mounting | Surface Mount | | Transistor Polarity | Complementary NPN and PNP | | Power Dissipation Npn | 783mW | | Power Dissipation Pnp | 783mW | | Transistor Case Style | SOIC | | Transition Frequency Npn | 100MHz | | Transition Frequency Pnp | 100MHz | | Operating Temperature Max | 150°C | | Dc Current Gain Hfe Min Npn | 200hFE | | Dc Current Gain Hfe Min Pnp | 200hFE | | Continuous Collector Current Npn | 3A | | Continuous Collector Current Pnp | 3A | | Collector Emitter Voltage Max Npn | 40V | | Collector Emitter Voltage Max Pnp | 40V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:2774845/) NSS40302PDR2G ## Complementary 40 V, 6.0 A, Low V Transistor CE(sat) ON Semiconductor’s e[2] PowerEdge family of low VCE(sat) transistors are surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. **www.onsemi.com** Typical applications are low voltage motor controls in mass storage products such as disc drives and tape drives. In the automotive industry they can be used in air bag deployment and in the instrument cluster. The high current gain allows e[2] PowerEdge devices to be driven directly from PMU’s control outputs, and the Linear Gain (Beta) makes them ideal components in analog amplifiers. **40 VOLTS, 6.0 AMPS COMPLEMENTARY LOW V TRANSISTOR CE(sat) EQUIVALENT R 80 m DS(on)** COLLECTOR COLLECTOR **Features** 7,8 5,6 • NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 2 4 BASE BASE Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS ~~©~~ 1 3 Compliant EMITTER EMITTER **MAXIMUM RATINGS** (TA = 25 ° C) 8 **Rating Symbol Max Unit** 1 Collector-Emitter Voltage NPN VCEO 40 Vdc **SOIC−8** PNP −40 **CASE 751** Collector-Base Voltage NPN VCBO 40 Vdc **STYLE 16** PNP −40 Emitter-Base Voltage NPN VEBO 6.0 Vdc **DEVICE MARKING** PNP −7.0 8 Collector Current − Continuous NPN IC 3.0 A C40302 PNP −3.0 AYWW Collector Current − Peak NPN ICM 6.0 A 1 PNP −6.0 Electrostatic Discharge ESD HBM Class 3B C40302 = Specific Device Code MM Class C A = Assembly Location ~~=e~~ Y = Year Stresses exceeding those listed in the Maximum Ratings table may damage the WW = Work Week device. If any of these limits are exceeded, device functionality should not be = Pb−Free Package assumed, damage may occur and reliability may be affected. (Note: Microdot may be in either location) **ORDERING INFORMATION Device Package Shipping**[†] NSS40302PDR2G SOIC−8 2500 / (Pb−Free) Tape & Reel NSV40302PDR2G SOIC−8 2500 / (Pb−Free) Tape & Reel ~~===~~ †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Publication Order Number: **1** © Semiconductor Components Industries, LLC, 2015 **May, 2015 − Rev. 2** **NSS40302P/D** **NSS40302PDR2G** ## **THERMAL CHARACTERISTICS** |**THERMAL CHARACTERISTICS**|||| |---|---|---|---| |**Characteristic**|**Symbol**|**Max**|**Unit**| |**SINGLE HEATED**|||| |Total Device Dissipation (Note 1)
TA= 25°C
Derate above 25°C|PD|576
4.6|mW
mW/°C| |Thermal Resistance, Junction−to−Ambient (Note 1)|R�JA|217|°C/W| |Total Device Dissipation (Note 2)
TA= 25°C
Derate above 25°C|PD|676
5.4|mW
mW/°C| |Thermal Resistance, Junction−to−Ambient (Note 2)|R�JA|185|°C/W| |**DUAL HEATED**(Note 3)|||| |Total Device Dissipation (Note 1)
TA= 25°C
Derate above 25°C|PD|653
5.2|mW
mW/°C| |Thermal Resistance, Junction−to−Ambient (Note 1)|R�JA|191|°C/W| |Total Device Dissipation (Note 2)
TA= 25°C
Derate above 25°C|PD|783
6.3|mW
mW/°C| |Thermal Resistance, Junction−to−Ambient (Note 2)|R�JA|160|°C/W| |Junction and Storage Temperature Range|TJ, Tstg|−55 to +150|°C| 1. FR−4 @ 10 mm[2] , 1 oz. copper traces, still air. 2. FR−4 @ 100 mm[2] , 1 oz. copper traces, still air. 3. Dual heated values assume total power is the sum of two equally powered devices. **www.onsemi.com** **2** ## **NSS40302PDR2G** |**NPN ELECTRICAL CHARACTERISTICS**(TA= 25°C unless otherwise noted)|**NPN ELECTRICAL CHARACTERISTICS**(TA= 25°C unless otherwise noted)||||| |---|---|---|---|---|---| |**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**| |**OFF CHARACTERISTICS**|||||| |Collector−Emitter Breakdown Voltage
(IC= 10 mAdc, IB= 0)|V(BR)CEO|40|−|−|Vdc| |Collector−Base Breakdown Voltage
(IC= 0.1 mAdc, IE= 0)|V(BR)CBO|40|−|−|Vdc| |Emitter−Base Breakdown Voltage
(IE= 0.1 mAdc, IC= 0)|V(BR)EBO|6.0|−|−|Vdc| |Collector Cutoff Current
(VCB= 40 Vdc, IE= 0)|ICBO|−|−|0.1|�Adc| |Emitter Cutoff Current
(VEB= 6.0 Vdc)|IEBO|−|−|0.1|�Adc| |**ON CHARACTERISTICS**|||||| |DC Current Gain (Note 5)
(IC= 10 mA, VCE= 2.0 V)
(IC= 500 mA, VCE= 2.0 V)
(IC= 1.0 A, VCE= 2.0 V)
(IC= 2.0 A, VCE= 2.0 V)|hFE|200
200
180
180|400
350
340
320|−
−
−
−|| |Collector−Emitter Saturation Voltage (Note 5)
(IC= 0.1 A, IB= 0.010 A)
(IC= 1.0 A, IB= 0.100 A)
(IC= 1.0 A, IB= 0.010 A)
(IC= 2.0 A, IB= 0.200 A)|VCE(sat)|−
−
−
−|0.008
0.044
0.080
0.082|0.011
0.060
0.115
0.115|V| |Base−Emitter Saturation Voltage (Note 5)
(IC= 1.0 A, IB= 0.01 A)|VBE(sat)|−|0.780|0.900|V| |Base−Emitter Turn−on Voltage (Note 5)
(IC= 0.1 A, VCE= 2.0 V)|VBE(on)|−|0.650|0.750|V| |Cutoff Frequency
(IC= 100 mA, VCE= 5.0 V, f = 100 MHz)|fT|100|−|−|MHz| |Input Capacitance (VEB= 0.5 V, f = 1.0 MHz)|Cibo|−|320|450|pF| |Output Capacitance (VCB= 3.0 V, f = 1.0 MHz)|Cobo|−|40|50|pF| |**SWITCHING CHARACTERISTICS**|||||| |Delay (VCC= 30 V, IC= 750 mA, IB1= 15 mA)|td|−|−|100|ns| |Rise (VCC= 30 V, IC= 750 mA, IB1= 15 mA)|tr|−|−|100|ns| |Storage (VCC= 30 V, IC= 750 mA, IB1= 15 mA)|ts|−|−|780|ns| |Fall (VCC= 30 V, IC= 750 mA, IB1= 15 mA)|tf|−|−|110|ns| 4. Pulsed Condition: Pulse Width = 300 � sec, Duty Cycle ≤ 2%. Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. **www.onsemi.com** **3** ## **NSS40302PDR2G** |**PNP ELECTRICAL CHARACTERISTICS**(TA= 25°C unless otherwise noted)|**PNP ELECTRICAL CHARACTERISTICS**(TA= 25°C unless otherwise noted)||||| |---|---|---|---|---|---| |**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**| |**OFF CHARACTERISTICS**|||||| |Collector−Emitter Breakdown Voltage
(IC= −10 mAdc, IB= 0)|V(BR)CEO|−40|−|−|Vdc| |Collector−Base Breakdown Voltage
(IC= −0.1 mAdc, IE= 0)|V(BR)CBO|−40|−|−|Vdc| |Emitter−Base Breakdown Voltage
(IE= −0.1 mAdc, IC= 0)|V(BR)EBO|−7.0|−|−|Vdc| |Collector Cutoff Current
(VCB= −40 Vdc, IE= 0)|ICBO|−|−|−0.1|�Adc| |Emitter Cutoff Current
(VEB= −6.0 Vdc)|IEBO|−|−|−0.1|�Adc| |**ON CHARACTERISTICS**|||||| |DC Current Gain (Note 5)
(IC= −10 mA, VCE= −2.0 V)
(IC= −500 mA, VCE= −2.0 V)
(IC= −1.0 A, VCE= −2.0 V)
(IC= −2.0 A, VCE= −2.0 V)|hFE|250
220
180
150|380
340
300
230|−
−
−
−|| |Collector−Emitter Saturation Voltage (Note 5)
(IC= −0.1 A, IB= −0.010 A)
(IC= −1.0 A, IB= −0.100 A)
(IC= −1.0 A, IB= −0.010 A)
(IC= −2.0 A, IB= −0.200 A)|VCE(sat)|−
−
−
−|−0.013
−0.075
−0.130
−0.135|−0.017
−0.095
−0.170
−0.170|V| |Base−Emitter Saturation Voltage (Note 5)
(IC= −1.0 A, IB= −0.01 A)|VBE(sat)|−|−0.780|−0.900|V| |Base−Emitter Turn−on Voltage (Note 5)
(IC= −0.1 A, VCE= −2.0 V)|VBE(on)|−|−0.660|−0.750|V| |Cutoff Frequency
(IC= −100 mA, VCE= −5.0 V, f = 100 MHz)|fT|100|−|−|MHz| |Input Capacitance (VEB= −0.5 V, f = 1.0 MHz)|Cibo|−|250|300|pF| |Output Capacitance (VCB= −3.0 V, f = 1.0 MHz)|Cobo|−|50|65|pF| |**SWITCHING CHARACTERISTICS**|||||| |Delay (VCC= −30 V, IC= −750 mA, IB1= −15 mA)|td|−|−|60|ns| |Rise (VCC= −30 V, IC= −750 mA, IB1= −15 mA)|tr|−|−|120|ns| |Storage (VCC= −30 V, IC= −750 mA, IB1= −15 mA)|ts|−|−|400|ns| |Fall (VCC= −30 V, IC= −750 mA, IB1= −15 mA)|tf|−|−|130|ns| 5. Pulsed Condition: Pulse Width = 300 � sec, Duty Cycle ≤ 2%. **www.onsemi.com** **4** **NSS40302PDR2G** ## **NPN TYPICAL CHARACTERISTICS** **==> picture [491 x 591] intentionally omitted <==** **----- Start of picture text -----**
0.16 0.30
IC/IB = 10 150 ° C IC/IB = 100
0.14
25 ° C 0.25
0.12 150 ° C
0.20
0.10
−55 ° C
0.08 0.15
0.06 25 ° C
0.10
0.04 −55 ° C
0.05
0.02
0 0
0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
Figure 1. Collector Emitter Saturation Voltage Figure 2. Collector Emitter Saturation Voltage
vs. Collector Current vs. Collector Current
700 1.0
150 ° C (5.0 V)
600 150 ° C (2.0 V) 0.9 IC/IB = 10 −55 ° C
0.8
500
25 ° C (5.0 V) 0.7 25 ° C
400 25 ° C (2.0 V) 0.6
0.5
300 −55 ° C (5.0 V) 0.4 150 ° C
200 −55 ° C (2.0 V)
0.3
100 0.2
0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
Figure 3. DC Current Gain vs. Collector Figure 4. Base Emitter Saturation Voltage vs.
Current Collector Current
1.0 1.0
0.9
0.9 VCE = +2.0 V −55 ° C 0.8 100 mA 1 A 2 A 3 A
0.8
0.7
0.7 °
25 C 0.6
0.6 0.5
0.4
0.5
150 ° C 0.3
0.4
0.2
0.3
0.1
0.2 0
0.001 0.01 0.1 1 10 0.0001 0.001 0.01 0.1
IC, COLLECTOR CURRENT (A) Ib, BASE CURRENT (A)
, COLLECTOR−EMITTER , COLLECTOR−EMITTER
SATURATION VOLTAGE (V) SATURATION VOLTAGE (V)
CE(sat) CE(sat)
V V
, DC CURRENT GAIN , BASE−EMITTER
FE BE(sat)
h V
SATURATION VOLTAGE (V)
VOLTAGE (V) VOLTAGE (V)
, COLLECTOR−EMITTER
, BASE−EMITTER TURN−ON
CE(sat)
BE(on) V
V
**----- End of picture text -----**
**Figure 5. Base Emitter Turn−On Voltage vs. Collector Current** **Figure 6. Saturation Region** **www.onsemi.com** **5** **NSS40302PDR2G** ## **NPN TYPICAL CHARACTERISTICS** **==> picture [240 x 384] intentionally omitted <==** **----- Start of picture text -----**
400
375
350
325
300
275
250
Cibo (pF)
225
200
175
150
0 1 2 3 4 5 6
VEB, EMITTER−BASE VOLTAGE (V)
Figure 7. Input Capacitance
10
1 ms
1 s 10 ms
100 ms
1.0
0.1
Thermal Limit
0.01
Single Pulse Test at TA = 25 ° C
0.001
0.01 0.1 1.0 10 100
VCE (Vdc)
, INPUT CAPACITANCE (pF)
ibo
C
(A)
IC
**----- End of picture text -----**
**Figure 9. Safe Operating Area** **==> picture [242 x 384] intentionally omitted <==** **----- Start of picture text -----**
80
70
60
50
40
Cobo (pF)
30
20
10
0 5 10 15 20 25 30 35 40
Vcb, COLLECTOR−BASE VOLTAGE (V)
Figure 8. Output Capacitance
3.5
IB = 12 mA
3.0
10 mA
2.5
8 mA
2.0
6 mA
1.5
4 mA
1.0
2 mA
0.5
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
VCE, COLLECTOR−EMITTER VOLTAGE (V)
, OUTPUT CAPACITANCE (pF)
obo
C
, COLLECTOR CURRENT (A)
IC
**----- End of picture text -----**
**Figure 10. Collector Current as a Function of Collector Emitter Voltage** **www.onsemi.com** **6** **NSS40302PDR2G** ## **PNP TYPICAL CHARACTERISTICS** **==> picture [491 x 591] intentionally omitted <==** **----- Start of picture text -----**
−0.25 −0.30
IC/IB = 10 IC/IB = 100 −55 ° C
150 ° C −0.25
−0.20 −55 ° C 25 ° C 150 ° C
−0.20
−0.15
25 ° C −0.15
−0.10
−0.10
−0.05
−0.05
0 0
−0.001 −0.01 −0.1 −1 −10 −0.001 −0.01 −0.1 −1 −10
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
Figure 11. Collector Emitter Saturation Voltage Figure 12. Collector Emitter Saturation Voltage
vs. Collector Current vs. Collector Current
800 −1.1
150 ° C (5.0 V)
700 −1.0 IC/IB = 10
150 ° C (2.0 V)
600 −0.9 −55 ° C
25 ° C (5.0 V)
500 −0.8
25 ° C
400 25 ° C (2.0 V) −0.7
300 −55 ° C (5.0 V) −0.6
150 ° C
200 −55 ° C (2.0 V) −0.5
100 −0.4
0 −0.3
−0.001 −0.01 −0.1 −1 −10 −0.001 −0.01 −0.1 −1 −10
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
Figure 13. DC Current Gain vs. Collector Figure 14. Base Emitter Saturation Voltage vs.
Current Collector Current
−1.0 −2.0
−1.8
−0.9 VCE = −2.0 V −55 ° C −1.6 100 mA 1 A 2 A 3 A
−0.8
−1.4
−0.7 25 ° C −1.2
−0.6 −1.0
−0.8
−0.5
150 ° C −0.6
−0.4
−0.4
−0.3
−0.2
−0.2 0
−0.001 −0.01 −0.1 −1 −10 −0.0001 −0.001 −0.01 −0.1
IC, COLLECTOR CURRENT (A) Ib, BASE CURRENT (A)
, COLLECTOR−EMITTER , COLLECTOR−EMITTER
SATURATION VOLTAGE (V) SATURATION VOLTAGE (V)
CE(sat) CE(sat)
V V
, DC CURRENT GAIN , BASE−EMITTER
FE BE(sat)
h V
SATURATION VOLTAGE (V)
VOLTAGE (V) VOLTAGE (V)
, COLLECTOR−EMITTER
, BASE−EMITTER TURN−ON
CE(sat)
BE(on) V
V
**----- End of picture text -----**
**Figure 15. Base Emitter Turn−On Voltage vs. Collector Current** **==> picture [123 x 9] intentionally omitted <==** **----- Start of picture text -----**
Figure 16. Saturation Region
**----- End of picture text -----**
**www.onsemi.com** **7** **NSS40302PDR2G** ## **PNP TYPICAL CHARACTERISTICS** **==> picture [492 x 377] intentionally omitted <==** **----- Start of picture text -----**
350 100
90
300
80
250
70
60
200
Cibo (pF) 50
150 Cobo (pF)
40
100 30
0 −1 −2 −3 −4 −5 −6 0 −5 −10 −15 −20 −25 −30 −35 −40
VEB, EMITTER BASE VOLTAGE (V) Vcb, COLLECTOR BASE VOLTAGE (V)
Figure 17. Input Capacitance Figure 18. Output Capacitance
−10 −3.5
1 ms −18 mA IB = −20 mA
1 s 10 ms −3.0
−16 mA
100 ms
−1
−2.5 −14 mA
−12 mA
−2.0 −10 mA
−0.1 −8 mA
−1.5
−6 mA
Thermal Limit
−0.01 −1.0 −4 mA
−0.5 −2 mA
Single Pulse Test at TA = 25 ° C
−0.001 0
−0.01 −0.1 −1 −10 −100 0 −0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4 −1.6 −1.8 −2.0
VCE (Vdc) VCE, COLLECTOR−EMITTER VOLTAGE (V)
, INPUT CAPACITANCE (pF)
, OUTPUT CAPACITANCE (pF)
ibo
C obo
C
(A)
IC
, COLLECTOR CURRENT (A)
IC
**----- End of picture text -----**
**Figure 19. Safe Operating Area** **Figure 20. Output Capacitance** **www.onsemi.com** **8** **NSS40302PDR2G** ## **PACKAGE DIMENSIONS** **==> picture [470 x 462] intentionally omitted <==** **----- Start of picture text -----**
SOIC−8 NB
CASE 751−07
ISSUE AK NOTES:
−X− 1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
A 2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A AND B DO NOT INCLUDE
MOLD PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006)
8 5 PER SIDE.
ier 5. DIMENSION D DOES NOT INCLUDE DAMBAR
B S 0.25 (0.010) M Y M PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.127 (0.005) TOTAL
1 IN EXCESS OF THE D DIMENSION AT
−Y− 4 K 6. 751−01 THRU 751−06 ARE OBSOLETE. NEWMAXIMUM MATERIAL CONDITION.
STANDARD IS 751−07.
~ G MILLIMETERS INCHES
DIM MIN MAX MIN MAX
C N X 45 A 4.80 5.00 0.189 0.197
B 3.80 4.00 0.150 0.157
SEATING
PLANE C 1.35 1.75 0.053 0.069
−Z− D 0.33 0.51 0.013 0.020
G 1.27 BSC 0.050 BSC
0.10 (0.004) H 0.10 0.25 0.004 0.010
S H D S [By] _ M ~/| J KJ 0.190.40 0.251.27 0.0070.016 0.0100.050
M 0 8 0 8
N 0.25 0.50 0.010 0.020
0.25 (0.010) M Z Y S X S S 5.80 6.20 0.228 0.244
STYLE 16:
SOLDERING FOOTPRINT* PIN 1. EMITTER, DIE #1
2. BASE, DIE #1
3. EMITTER, DIE #2
4. BASE, DIE #2
1.52 5.6. COLLECTOR, DIE #2COLLECTOR, DIE #2
0.060 7. COLLECTOR, DIE #1
8. COLLECTOR, DIE #1
p ean
7.0 4.0
0.275 a 0.155
0.6 1.270
0.024 9006 0.050
SCALE 6:1 mm
inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
**----- End of picture text -----**
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