# Bipolar (BJT) Single Transistor, NPN, 40 V, 3 A, 2 W, SOT-223, Surface Mount ![Product image](https://novapart.co/image/farnell:2728019/) **URL**: https://novapart.co/products/NSS40301MZ4T1G/bipolar-bjt-single-transistor-npn-40-v-3-a-2-w-sot **SKU**: NSS40301MZ4T1G **Manufacturer**: ONSEMI **Category**: Semiconductors - Discretes || Transistors || Bipolar Transistors || Single Bipolar Junction Transistors - BJT **Price**: €0.1190 **Stock**: 100+ **Lead Time**: 2 days (indicative) ## Description Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:40V; Transition Frequency ft:215MHz; Power Dissipation Pd:2W; DC Collector Current:3A; DC Current Gain hFE:100hFE; Transistor ## Specifications | Parameter | Value | |---|---| | Msl | MSL 1 - Unlimited | | Svhc | Lead (25-Jun-2025) | | No. Of Pins | 4Pins | | Product Range | - | | Qualification | AEC-Q101 | | Power Dissipation | 2W | | Transistor Mounting | Surface Mount | | Transistor Polarity | NPN | | Transition Frequency | 215MHz | | Transistor Case Style | SOT-223 | | Dc Current Gain Hfe Min | 100hFE | | Operating Temperature Max | 150°C | | Continuous Collector Current | 3A | | Collector Emitter Voltage Max | 40V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:2728019/) NSS40301MZ4 ## Bipolar Power Transistors 40 V, 3.0 A, Low VCE(sat) NPN Transistor ON Semiconductor’s e[2] PowerEdge family of low VCE(sat) transistors are surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. ## **http://onsemi.com** ## **NPN TRANSISTOR 3.0 AMPERES 40 VOLTS, 2.0 WATTS** Typical applications are DC−DC converters and power management in portable and battery powered products such as cellular and cordless phones, PDAs, computers, printers, digital cameras and MP3 players. Other applications are low voltage motor controls in mass storage products such as disc drives and tape drives. In the automotive industry they can be used in air bag deployment and in the instrument cluster. The high current gain allows e[2] PowerEdge devices to be driven directly from PMU’s control outputs, and the Linear Gain (Beta) makes them ideal components in analog amplifiers. **==> picture [44 x 164] intentionally omitted <==** **----- Start of picture text -----**
C 2, 4
B 1 E 3
Schematic
[©] 4
1
2
3
SOT−223
CASE 318E
STYLE 1
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## **Features** - Complement to NSS40300MZ4 Series - NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are **STYLE 1** RoHS Compliant **MARKING DIAGRAM MAXIMUM RATINGS** (TC = 25 ° C unless otherwise noted) **Rating Symbol Value Unit** AYW Collector−Emitter Voltage VCEO 40 Vdc 40301 Collector−Base Voltage VCB 40 Vdc 1 Emitter−Base Voltage VEB 6.0 Vdc A = Assembly Location Y Year Base Current − Continuous IB 1.0 Adc W = Work Week Collector Current − Continuous IC 3.0 Adc 40301 = Specific Device Code = Pb−Free Package Collector Current − Peak ICM 5.0 Adc Total Power Dissipation PD W **PIN ASSIGNMENT** Total PD @ TA = 25 ° C (Note 1) 2.0 Total PD @ TA = 25 ° C (Note 2) 0.80 4 Operating and Storage Junction TJ, Tstg –55 to +150 ° C C Temperature Range ~~an~~ Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended B C E Operating Conditions is not implied. Extended exposure to stresses above the 1 2 3 Recommended Operating Conditions may affect device reliability. oon 1. Mounted on 1” sq. (645 sq. mm) Collector pad on FR−4 bd material. Top View Pinout 2. Mounted on 0.012” sq. (7.6 sq. mm) Collector pad on FR−4 bd material. ## **ORDERING INFORMATION** See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. Publication Order Number: **NSS40301MZ4/D** **1** © Semiconductor Components Industries, LLC, 2013 **September, 2013 − Rev. 3** **NSS40301MZ4** ## **THERMAL CHARACTERISTICS** |**Characteristic**|**Symbol**|**Max**|**Unit**| |---|---|---|---| |Thermal Resistance, Junction−to−Case
Junction−to−Ambient on 1” sq. (645 sq. mm) Collector pad on FR−4 bd material
Junction−to−Ambient on 0.012” sq. (7.6 sq. mm) Collector pad on FR−4 bd material|R�JA
R�JA|64
155|°C/W| |Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 5 seconds|TL|260|°C| |**ELECTRICAL CHARACTERISTICS**(TC= 25°C unless otherwise noted)|**ELECTRICAL CHARACTERISTICS**(TC= 25°C unless otherwise noted)||||| |---|---|---|---|---|---| |**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**| |**OFF CHARACTERISTICS**|||||| |Collector−Emitter Sustaining Voltage (IC= 10 mAdc, IB= 0 Adc)|VCEO(sus)|40|−|−|Vdc| |Emitter−Base Voltage (IE= 50�Adc, IC= 0 Adc)|VEBO|6.0|−|−|Vdc| |Collector Cutoff Current (VCB= 40 Vdc)|ICBO|−|−|100|nAdc| |Emitter Cutoff Current (VBE= 6.0 Vdc)|IEBO|−|−|100|nAdc| |**ON CHARACTERISTICS**(Note 3)|||||| |Collector−Emitter Saturation Voltage
(IC= 0.5 Adc, IB= 50 mAdc)
(IC= 1.0 Adc, IB= 20 mAdc)
(IC= 3.0 Adc, IB= 0.3 Adc)|VCE(sat)|−
−
−|−
−
−|0.050
0.100
0.200|Vdc| |Base−Emitter Saturation Voltage (IC= 1.0 Adc, IB= 0.1 Adc)|VBE(sat)|−|−|1.0|Vdc| |Base−Emitter On Voltage (IC= 1.0 Adc, VCE= 2.0 Vdc)|VBE(on)|−|−|0.9|Vdc| |DC Current Gain
(IC= 0.5 Adc, VCE= 1.0 Vdc)
(IC= 1.0 Adc, VCE= 1.0 Vdc)
(IC= 3.0 Adc, VCE= 1.0 Vdc)|hFE|220
200
100|−
−
−|500|−| |**DYNAMIC CHARACTERISTICS**|||||| |Output Capacitance (VCB= 10 Vdc, f = 1.0 MHz)|Cob|−|25|−|pF| |Input Capacitance (VEB= 5.0 Vdc, f = 1.0 MHz)|Cib|−|170|−|pF| |Current−Gain − Bandwidth Product (Note 4)
(IC= 500 mA, VCE= 10 V, Ftest= 1.0 MHz)|fT|−|215|−|MHz| 3. Pulse Test: Pulse Width ≤ 300 � s, Duty Cycle ≤ 2%. 4. fT = |hFE| • ftest **==> picture [244 x 174] intentionally omitted <==** **----- Start of picture text -----**
2.5
2.0
TC
1.5
1.0
TA
0.5
0
25 50 75 100 125 150
TJ, TEMPERATURE ( ° C)
, POWER DISSIPATION (W)
D
P
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**Figure 1. Power Derating** **http://onsemi.com** **2** **NSS40301MZ4** ## **TYPICAL CHARACTERISTICS** **==> picture [491 x 173] intentionally omitted <==** **----- Start of picture text -----**
600 700
VCE = 1 V VCE = 4 V
150 ° C 600 150 ° C
500
500
400
25 ° C
25 ° C 400
300
300
200 −55 ° C
−55 ° C 200
100 100
0 0
0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
, DC CURRENT GAIN , DC CURRENT GAIN
FE FE
h h
**----- End of picture text -----**
**Figure 2. DC Current Gain** **Figure 3. DC Current Gain** **==> picture [491 x 382] intentionally omitted <==** **----- Start of picture text -----**
1 1
IC/IB = 10 150 ° C IC/IB = 50 150 ° C
25 ° C
0.1
−55 ° C
0.1 25 ° C
−55 ° C
0.01
0.001 0.01
0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
Figure 4. Collector−Emitter Saturation Voltage Figure 5. Collector−Emitter Saturation Voltage
1 1.2
VCE = 2 V
1.0
−55 ° C
IC = 3 A 0.8
2 A
0.1 0.6
25 ° C
1 A
0.4
0.5 A
150 ° C
0.2
0.1 A
0.01 0
0.0001 0.001 0.01 0.1 1.0 0.001 0.01 0.1 1 10
IB, BASE CURRENT (A) IC, COLLECTOR CURRENT (A)
, COLLECTOR−EMITTER , COLLECTOR−EMITTER
SATURATION VOLTAGE (V) SATURATION VOLTAGE (V)
CE(sat) CE(sat)
V V
, COLLECTOR−EMITTER
, EMITTER−BASE VOLTAGE (V)
SATURATION VOLTAGE (V)
CE(sat)
V
BE(on)
V
**----- End of picture text -----**
**Figure 6. Collector Saturation Region** **Figure 7. VBE(on) Voltage** **http://onsemi.com** **3** **NSS40301MZ4** ## **TYPICAL CHARACTERISTICS** **==> picture [492 x 591] intentionally omitted <==** **----- Start of picture text -----**
1.4 1.4
1.2 IC/IB = 10 1.2 IC/IB = 50
1.0 1.0
−55 ° C −55 ° C
0.8 0.8
0.6 25 ° C 0.6 25 ° C
0.4 0.4
150 ° C
0.2 0.2 150 ° C
0 0
0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
Figure 8. Base−Emitter Saturation Voltage Figure 9. Base−Emitter Saturation Voltage
450 100
400 TJ = 25 ° C TJ = 25 ° C
f test = 1 MHz ftest = 1 MHz
350 80
300
60
250
200
40
150
100
20
50
0 0
0 1 2 3 4 5 6 7 8 0 10 20 30 40 50 60 70 80 90
VEB, EMITTER BASE VOLTAGE (V) VCB, COLLECTOR BASE VOLTAGE (V)
Figure 10. Input Capacitance Figure 11. Output Capacitance
240 10
TJ = 25 ° C
200 ftest = 1 MHz 0.5 ms
VCE = 10 V 1 ms
160 1
10 ms
120
100 ms
80 0.1
40
0 0.01
0.001 0.01 0.1 1 10 1 10 100
IC, COLLECTOR CURRENT (A) VCE, COLLECTOR−EMITTER VOLTAGE (V)
, EMITTER−BASE , EMITTER−BASE
BE(sat) BE(sat)
V V
SATURATION VOLTAGE (V) SATURATION VOLTAGE (V)
, INPUT CAPACITANCE (pF)
, OUTPUT CAPACITANCE (pF)
ibo
C obo
C
PRODUCT (MHz)
, CURRENT BANDWIDTH
fTau , COLLECTOR CURRENT (A)IC
**----- End of picture text -----**
**Figure 12. Current−Gain Bandwidth Product** **Figure 13. Safe Operating Area** **http://onsemi.com** **4** **NSS40301MZ4** ## **ORDERING INFORMATION** |**ORDERING INFORMATION**||| |---|---|---| |**Device**|**Package**|**Shipping**†| |NSS40301MZ4T1G|SOT−223
(Pb−Free)|1,000 / Tape & Reel| |NSV40301MZ4T1G*|SOT−223
(Pb−Free)|1,000 / Tape & Reel| |NSS40301MZ4T3G|SOT−223
(Pb−Free)|4,000 / Tape & Reel| †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable **http://onsemi.com** **5** MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** **SOT−223 (TO−261)** CASE 318E−04 ISSUE R **SCALE 1:1** ## DATE 02 OCT 2018 **DOCUMENT NUMBER: 98ASB42680B** **DESCRIPTION: SOT−223 (TO−261)** Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. **PAGE 1 OF 2** ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. www.onsemi.com © Semiconductor Components Industries, LLC, 2018 DATE 02 OCT 2018 ## **SOT−223 (TO−261)** CASE 318E−04 ISSUE R STYLE 1: STYLE 2: STYLE 3: STYLE 4: STYLE 5: PIN 1. BASE PIN 1. ANODE PIN 1. GATE PIN 1. SOURCE PIN 1. DRAIN 2. COLLECTOR 2. CATHODE 2. DRAIN 2. DRAIN 2. GATE 3. EMITTER 3. NC 3. SOURCE 3. GATE 3. SOURCE 4. COLLECTOR 4. CATHODE 4. DRAIN 4. DRAIN 4. GATE STYLE 6: STYLE 7: STYLE 8: STYLE 9: STYLE 10: PIN 1. RETURN PIN 1. ANODE 1 CANCELLED PIN 1. INPUT PIN 1. CATHODE 2. INPUT 2. CATHODE 2. GROUND 2. ANODE 3. OUTPUT 3. ANODE 2 3. LOGIC 3. GATE 4. INPUT 4. CATHODE 4. GROUND 4. ANODE STYLE 11: STYLE 12: STYLE 13: PIN 1. MT 1 PIN 1. INPUT PIN 1. GATE 2. MT 2 2. OUTPUT 2. COLLECTOR 3. GATE 3. NC 3. EMITTER 4. MT 2 4. OUTPUT 4. COLLECTOR **GENERIC MARKING DIAGRAM*** AYW XXXXX 1 ~~|~~ A = Assembly Location Y = Year W = Work Week XXXXX = Specific Device Code = Pb−Free Package (Note: Microdot may be in either location) *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ ”, may or may not be present. Some products may not follow the Generic Marking. Electronic versions are uncontrolled except when accessed directly from the Document Repository. **DOCUMENT NUMBER: 98ASB42680B** Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. **DESCRIPTION: SOT−223 (TO−261) PAGE 2 OF 2** ~~—ee~~ ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. www.onsemi.com © Semiconductor Components Industries, LLC, 2018 **onsemi** , , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “ **onsemi** ” or its affiliates and/or subsidiaries in the United States and/or other countries. **onsemi** owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of **onsemi’s** product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. **onsemi** reserves the right to make changes at any time to any products or information herein, without notice. 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All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. **onsemi** does not convey any license under any of its intellectual property rights nor the rights of others. **onsemi** products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. 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