# Bipolar (BJT) Single Transistor, PNP, 40 V, 2 A, 710 mW, SOT-23, Surface Mount ![Product image](https://novapart.co/image/farnell:2464096/) **URL**: https://novapart.co/products/NSS40200LT1G/bipolar-bjt-single-transistor-pnp-40-v-2-a-710-mw **SKU**: NSS40200LT1G **Manufacturer**: ONSEMI **Category**: Semiconductors - Discretes || Transistors || Bipolar Transistors || Single Bipolar Junction Transistors - BJT **Price**: €0.1100 **Stock**: 1000+ **Lead Time**: 2 days (indicative) ## Description Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-40V; Transition Frequency ft:100MHz; Power Dissipation Pd:710mW; DC Collector Current:-2A; DC Current Gain hFE:150hFE; Transist ## Specifications | Parameter | Value | |---|---| | Msl | MSL 1 - Unlimited | | Svhc | No SVHC (25-Jun-2025) | | No. Of Pins | 3Pins | | Product Range | - | | Qualification | AEC-Q101 | | Power Dissipation | 710mW | | Transistor Mounting | Surface Mount | | Transistor Polarity | PNP | | Transition Frequency | 100MHz | | Transistor Case Style | SOT-23 | | Dc Current Gain Hfe Min | 150hFE | | Operating Temperature Max | 150°C | | Continuous Collector Current | 2A | | Collector Emitter Voltage Max | 40V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:2464096/) ## NSS40200L, NSV40200L ## 40 V, 2.0 A, Low VCE(sat) PNP Transistor ON Semiconductor’s e[2] PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. Typical applications are DC−DC converters and power management in portable and battery powered products such as cellular and cordless phones, PDAs, computers, printers, digital cameras and MP3 players. Other applications are low voltage motor controls in mass storage products such as disc drives and tape drives. In the automotive industry they can be used in air bag deployment and in the instrument cluster. The high current gain allows e[2] PowerEdge devices to be driven directly from PMU’s control outputs, and the Linear Gain (Beta) makes them ideal components in analog amplifiers. ## **www.onsemi.com** **−40 VOLTS 2.0 AMPS PNP LOW V TRANSISTOR CE(sat) EQUIVALENT R 80 m DS(on)** ~~=~~ **SOT−23 (TO−236) CASE 318 STYLE 6** ## **Features** - NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable - These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant* **==> picture [133 x 200] intentionally omitted <==** **----- Start of picture text -----**
COLLECTOR
3
1
BASE
@
2
EMITTER
MARKING DIAGRAM
VA M
1 —
VA = Specific Device Code*
M = Date Code*
= Pb−Free Package
**----- End of picture text -----**
(Note: Microdot may be in either location) > *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. *Specific Device Code, Date Code or overbar orientation and/or location may vary depending upon manufacturing location. This is a representation only and actual devices may not match this drawing exactly. **ORDERING INFORMATION Device Package Shipping**[†] NSS40200LT1G SOT−23 3,000 / Tape & Reel (Pb−Free) NSV40200LT1G SOT−23 3,000 / Tape & Reel (Pb−Free) ~~=——~~ †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Publication Order Number: **1** © Semiconductor Components Industries, LLC, 2015 **March, 2015 − Rev. 7** **NSS40200L/D** **NSS40200L, NSV40200L** ## **MAXIMUM RATINGS** (TA = 25 ° C) |**MAXIMUM RATINGS**(TA= 25°C)|||| |---|---|---|---| |**Rating**|**Symbol**|**Max**|**Unit**| |Collector-Emitter Voltage|VCEO|−40|Vdc| |Collector-Base Voltage|VCBO|−40|Vdc| |Emitter-Base Voltage|VEBO|−7.0|Vdc| |Collector Current − Continuous|IC|−2.0|A| |Collector Current − Peak|ICM|−4.0|A| |Base Current − Peak|IBM|−300|mA| |Electrostatic Discharge|ESD|HBM Class 3B
MM Class C|| ## **THERMAL CHARACTERISTICS** |**THERMAL CHARACTERISTICS**|||| |---|---|---|---| |**Characteristic**|**Symbol**|**Max**|**Unit**| |Total Device Dissipation
TA= 25°C
Derate above 25°C|PD(Note 1)|460
3.7|mW
mW/°C| |Thermal Resistance,
Junction−to−Ambient|R�JA(Note 1)|270|°C/W| |Total Device Dissipation
TA= 25°C
Derate above 25°C|PD(Note 2)|540
4.3|mW
mW/°C| |Thermal Resistance,
Junction−to−Ambient|R�JA(Note 2)|230|°C/W| |Total Device Dissipation
(Single Pulse < 10 sec)|PDsingle
(Note 3)|710|mW| |Junction and Storage Temperature Range|TJ, Tstg|−55 to +150|°C| Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR−4 @ 100 mm[2] , 1 oz. copper traces. 2. FR−4 @ 500 mm[2] , 1 oz. copper traces. 3. Thermal response. **www.onsemi.com** **2** ## **NSS40200L, NSV40200L** ## **ELECTRICAL CHARACTERISTICS** (TA = 25 ° C unless otherwise noted) |**ELECTRICAL CHARACTERISTICS**(TA= 25°C unless otherwise|noted)||||| |---|---|---|---|---|---| |**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**| |**OFF CHARACTERISTICS**|||||| |Collector−Emitter Breakdown Voltage
(IC= −10 mAdc, IB= 0)|V(BR)CEO|−40|−|−|Vdc| |Collector−Base Breakdown Voltage
(IC= −0.1 mAdc, IE= 0)|V(BR)CBO|−40|−|−|Vdc| |Emitter−Base Breakdown Voltage
(IE= −0.1 mAdc, IC= 0)|V(BR)EBO|−7.0|−|−|Vdc| |Collector Cutoff Current
(VCB= −40 Vdc, IE= 0)|ICBO|−|−|−0.1|�Adc| |Emitter Cutoff Current
(VEB= −7.0 Vdc)|IEBO|−|−|−0.1|�Adc| |**ON CHARACTERISTICS**|||||| |DC Current Gain (Note 4)
(IC= −10 mA, VCE= −2.0 V)
(IC= −500 mA, VCE= −2.0 V)
(IC= −1.0 A, VCE= −2.0 V)
(IC= −2.0 A, VCE= −2.0 V)|hFE|250
220
180
150|−
300
−
−|−
−
−
−|| |Collector−Emitter Saturation Voltage (Note 4)
(IC= −0.1 A, IB= −0.010 A) (Note 5)
(IC= −1.0 A, IB= −0.100 A)
(IC= −1.0 A, IB= −0.010 A)
(IC= −2.0 A, IB= −0.200 A)|VCE(sat)|−
−
−
−|−0.010
−0.080
−0.135
−0.135|−0.017
−0.095
−0.170
−0.170|V| |Base−Emitter Saturation Voltage (Note 4)
(IC= −1.0 A, IB= −0.01 A)|VBE(sat)|−|−|−0.900|V| |Base−Emitter Turn−on Voltage (Note 4)
(IC= −1.0 A, VCE= −2.0 V)|VBE(on)|−|−|−0.900|V| |Cutoff Frequency
(IC= −100 mA, VCE= −5.0 V, f = 100 MHz)|fT|100|−|−|MHz| |Input Capacitance (VEB= 0.5 V, f = 1.0 MHz)|Cibo|−|−|325|pF| |Output Capacitance (VCB= 3.0 V, f = 1.0 MHz)|Cobo|−|−|62|pF| |**SWITCHING CHARACTERISTICS**|||||| |Delay (VCC= −30 V, IC= 750 mA, IB1= 15 mA)|td|−|−|60|ns| |Rise (VCC= −30 V, IC= 750 mA, IB1= 15 mA)|tr|−|−|120|ns| |Storage (VCC= −30 V, IC= 750 mA, IB1= 15 mA)|ts|−|−|400|ns| |Fall (VCC= −30 V, IC= 750 mA, IB1= 15 mA)|tf|−|−|130|ns| Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%. 5. Guaranteed by design but not tested. **www.onsemi.com** **3** **NSS40200L, NSV40200L** ## **TYPICAL CHARACTERISTICS** **==> picture [491 x 591] intentionally omitted <==** **----- Start of picture text -----**
0.25 0.35
IC/IB = 10 VCE(sat) = 150 ° C IC/IB = 100 VCE(sat) = 150 ° C
0.3
0.2 −55 ° C 25 ° C
25 ° C 0.25
0.15
0.2
−55 ° C
0.15
0.1
0.1
0.05
0.05
0 0
0.001 0.01 0.1 1.0 10 0.001 0.01 0.1 1.0 10
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
Figure 1. Collector Emitter Saturation Voltage Figure 2. Collector Emitter Saturation Voltage
vs. Collector Current vs. Collector Current
800 1.1
750 150 ° C (5.0 V) IC/IB = 10
700 1.0
650 150 ° C (2.0 V)
0.9
600 −55 ° C
550 0.8
500 25 ° C (5.0 V)
450 0.7 25 ° C
400 25 ° C (2.0 V)
350 0.6
300 °
−55 C (5.0 V) 0.5
250 150 ° C
200 −55 ° C (2.0 V) 0.4
150
100 0.3
0.001 0.01 0.1 1.0 10 0.001 0.01 0.1 1.0 10
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
Figure 3. DC Current Gain vs. Collector Figure 4. Base Emitter Saturation Voltage vs.
Current Collector Current
1.0 1.0
VCE = −2.0 V 10 mA VCE (V) IC = 500 mA
0.9
−55 ° C
0.8 0.8
100 mA 300 mA
0.7 25 ° C
0.6
0.6
0.5
150 ° C 0.4
0.4
0.3
0.2
0.2
0.1 0
0.001 0.01 0.1 1.0 10 0.01 0.1 1.0 10 100
IC, COLLECTOR CURRENT (A) IB, BASE CURRENT (mA)
, COLLECTOR EMITTER , COLLECTOR EMITTER
CE(sat) SATURATION VOLTAGE (V) CE(sat) SATURATION VOLTAGE (V)
V V
, DC CURRENT GAIN , BASE EMITTER
FE BE(sat)
h V
SATURATION VOLTAGE (V)
VOLTAGE (V) VOLTAGE (V)
, BASE EMITTER TURN−ON , COLLECTOR−EMITTER
CE
V
BE(on)
V
**----- End of picture text -----**
**Figure 5. Base Emitter Turn−On Voltage vs. Collector Current** **Figure 6. Saturation Region** **www.onsemi.com** **4** **NSS40200L, NSV40200L** ## **TYPICAL CHARACTERISTICS** **==> picture [491 x 383] intentionally omitted <==** **----- Start of picture text -----**
325 100
300 Cibo (pF) 90 Cobo (pF)
275
80
250
70
225
60
200
50
175
40
150
125 30
100 20
0 1.0 2.0 3.0 4.0 5.0 6.0 0 5.0 10 15 20 25 30 35
VEB, EMITTER BASE VOLTAGE (V) VCB, COLLECTOR BASE VOLTAGE (V)
Figure 7. Input Capacitance Figure 8. Output Capacitance
10
100 ms 10 ms
1 s 1 ms
1.0
0.1
Thermal Limit
0.01
0.01 0.1 1.0 10 100
VCE (Vdc)
, INPUT CAPACITANCE (pF)
, OUTPUT CAPACITANCE (pF)
ibo
C obo
C
(A)
IC
**----- End of picture text -----**
**Figure 9. Safe Operating Area** **www.onsemi.com** **5** **NSS40200L, NSV40200L** ## **PACKAGE DIMENSIONS** **SOT−23 (TO−236)** CASE 318−08 ISSUE AP **==> picture [23 x 5] intentionally omitted <==** **----- Start of picture text -----**
NOTES:
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1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. ||||||||||||||**D**|**D**|||||||||||||||||||||||2.|CONTROLLING DIMENSION: INCH.|CONTROLLING DIMENSION: INCH.||| |---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---| |||||||||||||**3**|||||||||**SEE VIEW C**||**SEE VIEW C**||**SEE VIEW C**||||||||||||3.
4.|MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,|||| ||**E**|||||||||||||||||||**H**|**E**|||||||||||||||||PROTRUSIONS, OR GATE BURRS.
**DIM**
**MIN**
**NOM**
**MAX**
**MIN**
**MILLIMETERS**||**INCHES**
**NOM**|**MAX**| |||||||||||**1**|||**e**||**2**||||**b**|||||||||||||||0.25
**c**||||**A**
0.89
1.00
1.11
**A1**
0.01
0.06
0.10
**b**
0.37
0.44
0.50
**c**
0.09
0.13
0.18
**D**
2.80
2.90
3.04|0.035
0.001
0.015
0.003
0.110|0.040
0.002
0.018
0.005
0.114|0.044
0.004
0.020
0.007
0.120| |||||||||||||||||||||||||||||||||||||||**E**
1.20
1.30
1.40|0.047|0.051|0.055| |||||||||||||||||||||||||||||||||||||||**e**
1.78
1.90
2.04|0.070|0.075|0.081| |||||||||||||||||||||||||||||||||||||||**L**
0.10
0.20
0.30|0.004|0.008|0.012| |**A**||||||||||||||||||||||||||||||||||||||**L1**
2.10
2.40
2.64
**HE**
0.35
0.54
0.69|0.083
0.014|0.094
0.021|0.104
0.029| ||**A1**|||||||||||||||||||||||||||**L1**|||**L**|||||||STYLE 6:
PIN 1.
BASE
0
−−−
10
°
°|0
°|−−−|10
°| |||||||||||||||||||||||||||||||||||||||2.
EMITTER|||| |||||||||||||||||||||||||||||**VIEW C**||||||||||3.
COLLECTOR|||| ## **SOLDERING FOOTPRINT** **==> picture [158 x 145] intentionally omitted <==** **----- Start of picture text -----**
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
SCALE 10:1 mm
= (— inches )
0.8
0.031 — - { "
**----- End of picture text -----**
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