# Bipolar (BJT) Single Transistor, NPN, 30 V, 1 A, 710 mW, SOT-23, Surface Mount ![Product image](https://novapart.co/image/farnell:2317562/) **URL**: https://novapart.co/products/NSS30101LT1G/bipolar-bjt-single-transistor-npn-30-v-1-a-710-mw **SKU**: NSS30101LT1G **Manufacturer**: ONSEMI **Category**: Semiconductors - Discretes || Transistors || Bipolar Transistors || Single Bipolar Junction Transistors - BJT **Price**: €0.0720 **Stock**: 500+ **Lead Time**: 2 days (indicative) ## Description Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:30V; Transition Frequency ft:100MHz; Power Dissipation Pd:710mW; DC Collector Current:1A; DC Current Gain hFE:200hFE; Transi ## Specifications | Parameter | Value | |---|---| | Msl | MSL 1 - Unlimited | | Svhc | No SVHC (25-Jun-2025) | | No. Of Pins | 3Pins | | Product Range | - | | Qualification | AEC-Q101 | | Power Dissipation | 710mW | | Transistor Mounting | Surface Mount | | Transistor Polarity | NPN | | Transition Frequency | 100MHz | | Transistor Case Style | SOT-23 | | Dc Current Gain Hfe Min | 200hFE | | Operating Temperature Max | 150°C | | Continuous Collector Current | 1A | | Collector Emitter Voltage Max | 30V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:2317562/) NSS30101LT1G ## Low VCE(sat) Transistor , NPN, 30 V, 2.0 A, SOT-23 Package **www.onsemi.com** ON Semiconductor’s e[2] PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These CE(sat)) and high current gain capability. These ) and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. **30 VOLTS** saturation voltage (VCE(sat)) and high current gain capability. These CE(sat)) and high current gain capability. These ) and high current gain capability. These **2.0 AMPS** are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. **NPN LOW VCE(sat) TRANSISTOR** Typical application are DC−DC converters and power management **EQUIVALENT R 100 m DS(on)** in portable and battery powered products such as cellular and cordless phones, PDAs, computers, printers, digital cameras and MP3 players. COLLECTOR Other applications are low voltage motor controls in mass storage 3 products such as disc drives and tape drives. In the automotive industry they can be used in air bag deployment and in the instrument 1 cluster. The high current gain allows e[2] PowerEdge devices to be BASE driven directly from PMU’s control outputs, and the Linear Gain ~~—~~ (Beta) makes them ideal components in analog amplifiers. 2 • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS EMITTER Compliant 3 **MAXIMUM RATINGS** (TA = 25A = 25 = 25 ° C) 1 ~~2~~ **Rating Symbol Max Unit** 2 Collector-Emitter Voltage VCEOCEO 30 Vdc **SOT−23 (TO−236)** Collector-Base Voltage VCBOCBO 50 Vdc **CASE 318 STYLE 6** **MAXIMUM RATINGS** (TA = 25A = 25 = 25 ° C) 1 **Rating Symbol Max Unit** 2 Collector-Emitter Voltage VCEOCEO 30 Vdc **SOT−23 (TO−236)** Collector-Base Voltage VCBOCBO 50 Vdc **CASE 318 STYLE 6** Emitter-Base Voltage VEBO 5.0 Vdc Collector Current − Continuous IC 1.0 A **MARKING DIAGRAM** Collector Current − Peak ICM 2.0 A ~~==~~ **THERMAL CHARACTERISTICS** VS6M **Characteristic Symbol Max Unit** 1 Total Device Dissipation PD (Note 1) 310 mW Derate above 25TA = 25 ° C ° C 2.5 mW/ ° C VS6 = Specific Device Code M = Date Code* Thermal Resistance, R θ JA (Note 1) 403 ° C/W = Pb−Free Package Junction to Ambient (Note: Microdot may be in either location) *Date Code orientation and/or overbar may Total Device Dissipation PD (Note 2) 710 mW vary depending upon manufacturing location. TA = 25 ° C Derate above 25 ° C 5.7 mW/ ° C Thermal Resistance, R θ JA (Note 2) 176 ° C/W **ORDERING INFORMATION** Junction to Ambient Total Device Dissipation PDsingle 575 mW **Device Package Shipping**[†] (Single Pulse < 10 sec.) NSS30101LT1G SOT−23 3000/Tape & Reel Junction and Storage TJ, Tstg −55 to ° C (Pb−Free) Temperature Range +150 ~~= ==~~ †For information on tape and reel specifications, Stresses exceeding those listed in the Maximum Ratings table may damage the including part orientation and tape sizes, please device. If any of these limits are exceeded, device functionality should not be refer to our Tape and Reel Packaging Specification assumed, damage may occur and reliability may be affected. Brochure, BRD8011/D. 1. FR−4 @ Minimum Pad. 2. FR−4 @ 1.0 X 1.0 inch Pad. Publication Order Number: **1** © Semiconductor Components Industries, LLC, 2005 **October, 2016 − Rev. 2** **NSS30101L/D** ## **NSS30101LT1G** ## **ELECTRICAL CHARACTERISTICS** (TA = 25 ° C unless otherwise noted) |**ELECTRICAL CHARACTERISTICS**(TA= 25°C unless otherwise noted)||||| |---|---|---|---|---| |**Characteristic**|**Symbol**|**Min**|**Max**|**Unit**| |**OFF CHARACTERISTICS**||||| |Collector−Emitter Breakdown Voltage
(IC= 10 mAdc, IB= 0)|V(BR)CEO|30|−|Vdc| |Collector−Base Breakdown Voltage
(IC= 0.1 mAdc, IE= 0)|V(BR)CBO|50|−|Vdc| |Emitter−Base Breakdown Voltage
(IE= 0.1 mAdc, IC= 0)|V(BR)EBO|5.0|−|Vdc| |Collector Cutoff Current
(VCB= 30 Vdc, IE= 0)|ICBO|−|0.1|�Adc| |Collector−Emitter Cutoff Current
(VCES= 30 Vdc)|ICES|−|0.1|�Adc| |Emitter Cutoff Current
(VEB= 4.0 Vdc)|IEBO|−|0.1|�Adc| |**ON CHARACTERISTICS**||||| |DC Current Gain (Note 3)
(IC= 50 mA, VCE= 5.0 V)
(IC= 0.5 A, VCE= 5.0 V)
(IC= 1.0 A, VCE= 5.0 V)|hFE|300
300
200|−
900
−|| |Collector−Emitter Saturation Voltage (Note 3)
(IC= 1.0 A, IB= 100 mA)
(IC= 0.5 A, IB= 50 mA)
(IC= 0.1 A, IB= 1.0 mA)|VCE(sat)|−
−
−|0.200
0.125
0.075|V| |Base−Emitter Saturation Voltage (Note 3)
(IC= 1.0 A, IB= 0.1 A)|VBE(sat)|−|1.1|V| |Base−Emitter Turn−on Voltage (Note 3)
(IC= 1.0 mA, VCE= 2.0 V)|VBE(on)|−|1.1|V| |Cutoff Frequency
(IC= 100 mA, VCE= 5.0 V, f = 100 MHz|fT|100|−|MHz| |Output Capacitance (f = 1.0 MHz)|Cobo|−|15|pF| Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulsed Condition: Pulse Width = 300 � sec, Duty Cycle ≤ 2% **==> picture [486 x 171] intentionally omitted <==** **----- Start of picture text -----**
1.0 1.0
0.9 0.9
IC = 2 A
0.8 0.8
0.7 0.7
IC = 1 A
0.6 0.6
0.5 0.5
0.4 0.4 Ic/Ib = 100
0.3 0.3
Ic/Ib = 10
0.2 IC = 500 mA 0.2
0.1 IC = 100 mA 0.1
0 0
0.001 0.01 0.1 0.2 0.001 0.01 0.1 1 2
Ib (A) Ic (A)
(V) (V)
CE CE
V V
**----- End of picture text -----**
**Figure 1. VCE versus Ib** **Figure 2. VCE versus Ic** **www.onsemi.com** **2** **NSS30101LT1G** **==> picture [498 x 613] intentionally omitted <==** **----- Start of picture text -----**
800 1.2
VCE = 5 V VCE = 5 V
700 +125 ° C
1.0
600
−55 ° C
0.8
500 +25 ° C
+25 ° C
400 0.6
300 −55 ° C +125 ° C
0.4
200
0.2
100
0 0
0.001 0.01 0.1 1 2 0.001 0.01 0.1 1 2
Ic (A) Ic (A)
Figure 3. hFE versus Ic Figure 4. VBE(on) versus Ic
1.2 10
1.0
Ic/Ib = 10
0.8 1
Ic/Ib = 100
1 ms
0.6
10 ms
0.4 0.1 100 ms
1 s
0.2
SINGLE PULSE Tamb = 25 ° C dc
0 0.01
0.001 0.01 0.1 1 2 0.1 1 10 100
Ic (A) VCE (V)
Figure 5. VBE(sat) versus Ic Figure 6. Safe Operating Area
0.5 0.2 0.1
1.0E+00
0.05
0.02
1.0E-01
D = 0.01
1.0E-02
r(t)
1.0E-03
1E-05 0.0001 0.001 0.01 0.1 1.0 10 100 1000
t, TIME (sec)
(V)
FE
h
BE(on)
V
(V)
BE
V
COLLECTOR CURRENT (A)
IC
Rthja, (t)
**----- End of picture text -----**
**Figure 7. Normalized Thermal Response** **www.onsemi.com** **3** MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** **==> picture [494 x 668] intentionally omitted <==** **----- Start of picture text -----**
SOT−23 (TO−236)
CASE 318−08
ISSUE AS
2 DATE 30 JAN 2018
SCALE 4:1
D NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
0.25 MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
“a 3 t = THE BASE MATERIAL.
| E HE T 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,PROTRUSIONS, OR GATE BURRS.
1 2
MILLIMETERS INCHES
DIM MIN NOM MAX MIN NOM MAX
L A 0.89 1.00 1.11 0.035 0.039 0.044
3X b L1 A1b 0.010.37 0.060.44 0.100.50 0.0000.015 0.0020.017 0.0040.020
e VIEW C c 0.08 0.14 0.20 0.003 0.006 0.008
TOP VIEW D 2.80 2.90 3.04 0.110 0.114 0.120
E 1.20 1.30 1.40 0.047 0.051 0.055
e 1.78 1.90 2.04 0.070 0.075 0.080
L 0.30 0.43 0.55 0.012 0.017 0.022
A L1 0.35 0.54 0.69 0.014 0.021 0.027
H E 2.10 2.40 2.64 0.083 0.094 0.104
= T 0 ° −−− 10 ° 0 ° −−− 10 °
a A1 SIDE VIEW SEE VIEW C c
GENERIC
END VIEW
MARKING DIAGRAM*
RECOMMENDED
SOLDERING FOOTPRINT XXXM
1
2.90 i 0.903X XXX = Specific Device Code oo
M = Date Code
= Pb−Free Package
LO | cr ,
*This information is generic. Please refer to
3X 0.80 a) LL 0.95 device data sheet for actual part marking.
PITCH Pb−Free indicator, “G” or microdot “ ”, |
DIMENSIONS: MILLIMETERS may or may not be present.
STYLE 1 THRU 5: STYLE 6: STYLE 7: STYLE 8:
CANCELLED PIN 1. BASE PIN 1. EMITTER PIN 1. ANODE
2. EMITTER 2. BASE 2. NO CONNECTION
3. COLLECTOR 3. COLLECTOR 3. CATHODE
STYLE 9: STYLE 10: STYLE 11: STYLE 12: STYLE 13: STYLE 14:
PIN 1. ANODE PIN 1. DRAIN PIN 1. ANODE PIN 1. CATHODE PIN 1. SOURCE PIN 1. CATHODE
2. ANODE 2. SOURCE 2. CATHODE 2. CATHODE 2. DRAIN 2. GATE
3. CATHODE 3. GATE 3. CATHODE−ANODE 3. ANODE 3. GATE 3. ANODE
STYLE 15: STYLE 16: STYLE 17: STYLE 18: STYLE 19: STYLE 20:
PIN 1. GATE PIN 1. ANODE PIN 1. NO CONNECTION PIN 1. NO CONNECTION PIN 1. CATHODE PIN 1. CATHODE
2. CATHODE 2. CATHODE 2. ANODE 2. CATHODE 2. ANODE 2. ANODE
3. ANODE 3. CATHODE 3. CATHODE 3. ANODE 3. CATHODE−ANODE 3. GATE
STYLE 21: STYLE 22: STYLE 23: STYLE 24: STYLE 25: STYLE 26:
PIN 1. GATE PIN 1. RETURN PIN 1. ANODE PIN 1. GATE PIN 1. ANODE PIN 1. CATHODE
2. SOURCE 2. OUTPUT 2. ANODE 2. DRAIN 2. CATHODE 2. ANODE
3. DRAIN 3. INPUT 3. CATHODE 3. SOURCE 3. GATE 3. NO CONNECTION
STYLE 27: STYLE 28:
PIN 1. CATHODE PIN 1. ANODE
2. CATHODE 2. ANODE
3. CATHODE 3. ANODE
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
DOCUMENT NUMBER: 98ASB42226B Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DESCRIPTION: SOT−23 (TO−236) PAGE 1 OF 1
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