# Bipolar (BJT) Single Transistor, PNP, 100 V, 3 A, 33 W, TO-252 (DPAK), Surface Mount
**URL**: https://novapart.co/products/NSS1C300ET4G/bipolar-bjt-single-transistor-pnp-100-v-3-a-33-w
**SKU**: NSS1C300ET4G
**Manufacturer**: ONSEMI
**Category**: Semiconductors - Discretes || Transistors || Bipolar Transistors || Single Bipolar Junction Transistors - BJT
**Price**: €0.3510
**Stock**: 500+
**Lead Time**: 2 days (indicative)
## Description
Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:100V; Transition Frequency ft:100MHz; Power Dissipation Pd:33W; DC Collector Current:3A; DC Current Gain hFE:50hFE; Tra
## Specifications
| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | Lead (25-Jun-2025) |
| No. Of Pins | 4Pins |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 33W |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | PNP |
| Transition Frequency | 100MHz |
| Transistor Case Style | TO-252 (DPAK) |
| Dc Current Gain Hfe Min | 50hFE |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 3A |
| Collector Emitter Voltage Max | 100V |
## Datasheet
📄 [Download PDF](https://novapart.co/datasheet/farnell:2845324/)
NSS1C300ET4G
## 100 V, 3.0 A, Low VCE(sat) PNP Transistor
ON Semiconductor’s e[2] PowerEdge family of low VCE(sat) transistors are surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important.
## **www.onsemi.com**
## **100 VOLTS, 3.0 AMPS PNP LOW V TRANSISTOR CE(sat)**
Typical applications are DC−DC converters and power management in portable and battery powered products such as cellular and cordless phones, PDAs, computers, printers, digital cameras and MP3 players. Other applications are low voltage motor controls in mass storage products such as disc drives and tape drives. In the automotive industry they can be used in air bag deployment and in the instrument cluster. The high current gain allows e[2] PowerEdge devices to be driven directly from PMU’s control outputs, and the Linear Gain (Beta) makes them ideal components in analog amplifiers.
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COLLECTOR
2, 4
1
BASE
& )
3
EMITTER
**----- End of picture text -----**
## **Features**
- Complement to NSS1C301ET4G
- NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
**==> picture [48 x 77] intentionally omitted <==**
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4
1 [2]
3
DPAK
CASE 369C
STYLE 1
**----- End of picture text -----**
• These Devices are Pb−Free and are RoHS Compliant 3 **MAXIMUM RATINGS** (TA = 25 ° C) **DPAK CASE 369C Rating Symbol Max Unit STYLE 1** Collector−Base Voltage VCBO 140 Vdc Collector−Emitter Voltage VCEO 100 Vdc **MARKING DIAGRAM** Emitter−Base Voltage VEB 6.0 Vdc Collector Current − Continuous IC 3.0 Adc YWW 1C30EG Collector Current − Peak ICM 6.0 Adc Base Current IB 0.5 Adc Y = Year Total Power Dissipation PD @ TC = 25 ° C 33 W WW = Work Week Derate above 25 ° C 0.26 W/ ° C 1C30E = Device Code G = Pb−Free Total Power Dissipation (Note 1) PD @ TA = 25 ° C 2.1 W Derate above 25 ° C 0.017 W/ ° C **ORDERING INFORMATION** Operating and Storage Junction TJ, Tstg −65 to +150 ° C Temperature Range **Device Package Shipping**[†] ~~os~~ Stresses exceeding those listed in the Maximum Ratings table may damage the NSS1C300ET4G DPAK 2500/ device. If any of these limits are exceeded, device functionality should not be (Pb−Free) Tape & Reel assumed, damage may occur and reliability may be affected. 1. These ratings are applicable when surface mounted on the minimum pad NSV1C300ET4G DPAK 2500/ sizes recommended. (Pb−Free) Tape & Reel ~~==~~ †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.
Publication Order Number:
**1**
© Semiconductor Components Industries, LLC, 2015 **June, 2015 − Rev. 7**
**NSS1C300E/D**
**NSS1C300ET4G**
## **THERMAL CHARACTERISTICS**
|**THERMAL CHARACTERISTICS**||||
|---|---|---|---|
|**Characteristic**|**Symbol**|**Max**|**Unit**|
|Thermal Resistance, Junction−to−Case|R�JC|3.8|°C/W|
|Thermal Resistance, Junction−to−Ambient (Note 2)|R�JA|59.5|°C/W|
2. These ratings are applicable when surface mounted on the minimum pad sizes recommended.
## **ELECTRICAL CHARACTERISTICS** (TA = 25 ° C unless otherwise noted)
|**ELECTRICAL CHARACTERISTICS**(TA= 25°C unless ot|herwise noted)|||||
|---|---|---|---|---|---|
|**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|
|**OFF CHARACTERISTICS**||||||
|Collector−Emitter Breakdown Voltage
(IC= −10 mAdc, IB= 0)|V(BR)CEO|−100|−|−|Vdc|
|Collector−Base Breakdown Voltage
(IC= −0.1 mAdc, IE= 0)|V(BR)CBO|−140|−|−|Vdc|
|Emitter−Base Breakdown Voltage
(IE= −0.1 mAdc, IC= 0)|V(BR)EBO|−6.0|−|−|Vdc|
|Collector Cutoff Current
(VCB= −140 Vdc, IE= 0)|ICBO|−|−|−0.1|�Adc|
|Emitter Cutoff Current
(VEB= −6.0 Vdc)|IEBO|−|−|−0.1|�Adc|
|**ON CHARACTERISTICS**||||||
|DC Current Gain (Note 3)
(IC= −0.1 A, VCE= −2.0 V)
(IC= −0.5 A, VCE= −2.0 V)
(IC= −1.0 A, VCE= −2.0 V)
(IC= −3.0 A, VCE= −2.0 V)|hFE|180
180
120
50|−
−
−
−|−
−
360
−|−|
|Collector−Emitter Saturation Voltage (Note 3)
(IC= −0.1 A, IB= −10 mA)
(IC= −1.0 A, IB= −0.100 A)
(IC= −2.0 A, IB= −0.200 A)
(IC= −3.0 A, IB= −0.300 A)|VCE(sat)|−
−
−
−|−
−
−
−|−0.070
−0.150
−0.250
−0.400|V|
|Base−Emitter Saturation Voltage (Note 3)
(IC= −1.0 A, IB= −0.1 A)|VBE(sat)|−|−|−1.0|V|
|Base−Emitter Turn−on Voltage (Note 3)
(IC= −1.0 A, VCE= −2.0 V)|VBE(on)|−|−|−0.900|V|
|Cutoff Frequency
(IC= −500 mA, VCE= −10 V, f = 100 MHz)|fT|−|100|−|MHz|
|Input Capacitance
(VEB= 5.0 V, f = 1.0 MHz)|Cibo|−|360|−|pF|
|Output Capacitance
(VCB= 10 V, f = 1.0 MHz)|Cobo|−|60|−|pF|
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%.
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**2**
**NSS1C300ET4G**
## **TYPICAL CHARACTERISTICS**
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1000 1000
VCE = 2 V VCE = 5 V
150 ° C 150 ° C
25 ° C 25 ° C
−55 ° C −55 ° C
100 100
10 10
0.01 0.1 1 10 0.01 0.1 1 10
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
Figure 1. DC Current Gain Figure 2. DC Current Gain
0.5 0.4
IC/IB = 10 IC/IB = 50
−55 ° C
0.4 0.3 −55 ° C
0.3
25 ° C 0.2
0.2 150 ° C 25 ° C
0.1 150 ° C
0.1
0 0
0.01 0.1 1 10 0.01 0.1 1 10
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
Figure 3. Collector−Emitter Saturation Voltage Figure 4. Collector−Emitter Saturation Voltage
1.2 1.2
IC/IB = 10 IC/IB = 50
1 25 ° C −55 ° C 1 25 ° C −55 ° C
0.8 0.8
0.6 0.6
150 ° C
0.4 0.4 150 ° C
0.2 0.2
0 0
0.01 0.1 1 10 0.01 0.1 1 10
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
, DC CURRENT GAIN , DC CURRENT GAIN
FE FE
h h
, COLLECTOR−EMITTER , COLLECTOR−EMITTER
SATURATION VOLTAGE (V) SATURATION VOLTAGE (V)
CE(sat) CE(sat)
V V
, BASE−EMITTER , BASE−EMITTER
BE(sat) BE(sat)
V V
SATURATION VOLTAGE (V) SATURATION VOLTAGE (V)
**----- End of picture text -----**
**Figure 5. Base−Emitter Saturation Voltage**
**Figure 6. Base−Emitter Saturation Voltage**
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**3**
**NSS1C300ET4G**
## **TYPICAL CHARACTERISTICS**
**==> picture [493 x 385] intentionally omitted <==**
**----- Start of picture text -----**
1.2 2
VCE = 2 V TA = 25 ° C
1 −55 ° C 1.6 IC = 3 A
25 ° C
0.8 1 A
1.2
0.6 2 A
0.8 0.5 A
0.4
150 ° C 0.4
0.1 A
0.2
0
0
0.01 0.1 1 10 0.1 1 10 100 1000
IC, COLLECTOR CURRENT (A) IB, BASE CURRENT (mA)
Figure 7. Base−Emitter On Voltage Figure 8. Collector Saturation Region
1000 1000
Cib VCE = 5 V
Cob
100 100
10 10
0.1 1 10 100 0.01 0.1 1 10
VR, REVERSE VOLTAGE (V) IC, COLLECTOR CURRENT (A)
, BASE−EMITTER ON VOLTAGE (V)
VOLTAGE (V)
BE(on) , COLLECTOR−EMITTER
V CE
V
PRODUCT (MHz)
C, CAPACITANCE (pF)
, CURRENT−GAIN−BANDWIDTH
fTau
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**Figure 9. Capacitance**
**Figure 10. Current−Gain−Bandwidth Product**
**==> picture [245 x 176] intentionally omitted <==**
**----- Start of picture text -----**
10
10 ms
1
100 ms
0.1
1.0 s
0.01
1 10 100
VCE, COLLECTOR EMITTER VOLTAGE (V)
, COLLECTOR CURRENT (A)
IC
**----- End of picture text -----**
**Figure 11. Safe Operating Area**
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**4**
**NSS1C300ET4G**
## **TYPICAL CHARACTERISTICS**
**==> picture [493 x 172] intentionally omitted <==**
**----- Start of picture text -----**
10
D = 0.5
1 0.2
0.1
0.05 R �JC(t) = r(t) R �JC P (pk)
0.02 R�JC = 3.8°C/W
0.1 D CURVES APPLY FOR POWER
0.01 PULSE TRAIN SHOWN t 1
Single Pulse READ TIME AT t1 t 2
TJ(pk) - TC = P(pk) �JC(t) DUTY CYCLE, D = t 1 /t 2
0.01
0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10
t, PULSE TIME (s)
C/W)
( °
R(t), TRANSIENT THERMAL RESPONSE
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**Figure 12. Typical Transient Thermal Response, Junction−to−Case**
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**5**
**NSS1C300ET4G**
## **PACKAGE DIMENSIONS**
**==> picture [481 x 451] intentionally omitted <==**
**----- Start of picture text -----**
DPAK (SINGLE GAUGE)
CASE 369C
ISSUE F
NOTES:
A 1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
E C 2. CONTROLLING DIMENSION: INCHES.
A 3. THERMAL PAD CONTOUR OPTIONAL WITHIN DI-
b3 B c2 4. DIMENSIONS D AND E DO NOT INCLUDE MOLDMENSIONS b3, L3 and Z.
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
4 NOT EXCEED 0.006 INCHES PER SIDE.
L3 bly op Z 5. DIMENSIONS D AND E ARE DETERMINED AT THE
D DETAIL A H 6. DATUMS A AND B ARE DETERMINED AT DATUMOUTERMOST EXTREMES OF THE PLASTIC BODY.
1 2 3 PLANE H.
7. OPTIONAL MOLD FEATURE.
L4 NOTE 7 DIM MININCHESMAX MILLIMETERSMIN MAX
b2 c BOTTOM VIEW A 0.086 0.094 2.18 2.38
e SIDE VIEW A1 0.000 0.005 0.00 0.13
b b 0.025 0.035 0.63 0.89
TOP VIEW 0.005 (0.13) M C b2b3 0.0280.180 0.0450.215 0.724.57 1.145.46
c 0.018 0.024 0.46 0.61
c2 0.018 0.024 0.46 0.61
H Z Z D 0.235 0.245 5.97 6.22
E 0.250 0.265 6.35 6.73
e 0.090 BSC 2.29 BSC
L2 [GAUGE] PLANE C SEATINGPLANE H 0.370 0.410 9.40 10.41
L 0.055 0.070 1.40 1.78
L1 0.114 REF 2.90 REF
L2 0.020 BSC 0.51 BSC
L L3 0.035 0.050 0.89 1.27
A1 BOTTOM VIEW L4 −−− 0.040 −−− 1.01
chy L1 a CONSTRUCTIONSALTERNATE A. Z 0.155 −−− 3.93 −−−
DETAIL A
ROTATED 9 CW SOLDERING FOOTPRINT* STYLE 1:PIN 1. BASE
2. COLLECTOR
6.20 3.00 3. EMITTER
4. COLLECTOR
0.244 0.118
2.58
0.102
5.80
1.60 6.17
0.228
0.063 0.243
Tee
SCALE 3:1 mm
inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
**----- End of picture text -----**
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**NSS1C300E/D**
**6**
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