# Bipolar (BJT) Single Transistor, NPN, 100 V, 2 A, 2 W, SOT-223, Surface Mount ![Product image](https://novapart.co/image/farnell:2724368/) **URL**: https://novapart.co/products/NSS1C201MZ4T1G/bipolar-bjt-single-transistor-npn-100-v-2-a-w-sot **SKU**: NSS1C201MZ4T1G **Manufacturer**: ONSEMI **Category**: Semiconductors - Discretes || Transistors || Bipolar Transistors || Single Bipolar Junction Transistors - BJT **Price**: €0.2220 **Stock**: 50+ **Lead Time**: 2 days (indicative) ## Description Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:100V; Transition Frequency ft:100MHz; Power Dissipation Pd:2W; DC Collector Current:2A; DC Current Gain hFE:40hFE; Tra ## Specifications | Parameter | Value | |---|---| | Msl | MSL 1 - Unlimited | | Svhc | Lead (25-Jun-2025) | | No. Of Pins | 4Pins | | Product Range | - | | Qualification | AEC-Q101 | | Power Dissipation | 2W | | Transistor Mounting | Surface Mount | | Transistor Polarity | NPN | | Transition Frequency | 100MHz | | Transistor Case Style | SOT-223 | | Dc Current Gain Hfe Min | 40hFE | | Operating Temperature Max | 150°C | | Continuous Collector Current | 2A | | Collector Emitter Voltage Max | 100V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:2724368/) ## NSS1C201MZ4, NSV1C201MZ4 ## 100 V, 2.0 A, Low VCE(sat) NPN Transistor ON Semiconductor’s e[2] PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. ## **http://onsemi.com** ## **100 VOLTS, 2.0 AMPS NPN LOW V TRANSISTOR CE(sat)** Typical applications are DC−DC converters and power management in portable and battery powered products such as cellular and cordless phones, PDAs, computers, printers, digital cameras and MP3 players. Other applications are low voltage motor controls in mass storage products such as disc drives and tape drives. In the automotive industry they can be used in air bag deployment and in the instrument cluster. The high current gain allows e[2] PowerEdge devices to be driven directly from PMU’s control outputs, and the Linear Gain (Beta) makes them ideal components in analog amplifiers. **==> picture [79 x 88] intentionally omitted <==** **----- Start of picture text -----**
COLLECTOR
2,4
1
BASE
© )
3
EMITTER
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## **Features** - NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable Qualified and PPAP Capable **MARKING DIAGRAM** • These Devices are Pb−Free, Halogen Free and are RoHS Compliant **MAXIMUM RATINGS** (TA = 25 ° C) **SOT−223** AYW **Rating Symbol Max Unit CASE 318E** 1C201 Collector-Emitter Voltage VCEO 100 Vdc **STYLE 1** 1 Collector-Base Voltage VCBO 140 Vdc Emitter-Base Voltage VEBO 7.0 Vdc A = Assembly Location Y = Year Collector Current − Continuous IC 2.0 A W = Work Week Collector Current − Peak ICM 3.0 A 1C201 = Specific Device Code **THERMAL CHARACTERISTICS** = Pb−Free Package **Characteristic Symbol Max Unit** ~~== SSS *~~ **PIN ASSIGNMENT** ~~bod~~ Total Device DissipationTA = 25 ° C PD (Note 1) 800 mW 4 Derate above 25 ° C 6.5 mW/ ° C C Thermal Resistance, R JA (Note 1) 155 ° C/W Junction−to−Ambient Total Device Dissipation PD (Note 2) B C E TA = 25 ° C 2.0 W 1 2 3 Derate above 25 ° C 15.6 mW/ ° C Thermal Resistance, R JA (Note 2) 64 ° C/W Top View Pinout ~~—~~ Junction−to−Ambient **ORDERING INFORMATION** ~~7~~ Total Device Dissipation PDsingle 710 mW (Single Pulse < 10 sec.) (Note 3) **Device Package Shipping**[†] Junction and Storage TJ, Tstg −55 to ° C NSS1C201MZ4T1G SOT−223 1000/ Temperature Range +150 NSV1C201MZ4T1G (Pb−Free) Tape & Reel Stresses exceeding Maximum Ratings may damage the device. Maximum NSS1C201MZ4T3G SOT−223 4000/ Ratings are stress ratings only. Functional operation above the Recommended (Pb−Free) Tape & Reel Operating Conditions is not implied. Extended exposure to stresses above the ~~yr Tt~~ Recommended Operating Conditions may affect device reliability. †For information on tape and reel specifications, 1. FR−4 @ 7.6 mm[2] , 1 oz. copper traces. †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. 2. FR−4 @ 645 mm[2] , 1 oz. copper traces. 3. Thermal response. Publication Order Number: **NSS1C201MZ4/D** **1** © Semiconductor Components Industries, LLC, 2013 **March, 2013 − Rev. 4** **NSS1C201MZ4, NSV1C201MZ4** ## **ELECTRICAL CHARACTERISTICS** (TA = 25 ° C unless otherwise noted) |**ELECTRICAL CHARACTERISTICS**(TA= 25°C unless otherwise n|oted)||||| |---|---|---|---|---|---| |**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**| |**OFF CHARACTERISTICS**|||||| |Collector−Emitter Breakdown Voltage (IC= 10 mAdc, IB= 0)|V(BR)CEO|100|||Vdc| |Collector−Base Breakdown Voltage (IC= 0.1 mAdc, IE= 0)|V(BR)CBO|140|||Vdc| |Emitter−Base Breakdown Voltage (IE= 0.1 mAdc, IC= 0)|V(BR)EBO|7.0|||Vdc| |Collector Cutoff Current (VCB= 140 Vdc, IE= 0)|ICBO|||100|nA| |Emitter Cutoff Current (VEB= 6.0 Vdc)|IEBO|||50|nA| |**ON CHARACTERISTICS**|||||| |DC Current Gain (Note 4)
(IC= 10 mA, VCE= 2.0 V)
(IC= 500 mA, VCE= 2.0 V)
(IC= 1.0 A, VCE= 2.0 V)
(IC= 2.0 A, VCE= 2.0 V)|hFE|150
120
80
40||360|| |Collector−Emitter Saturation Voltage (Note 4)
(IC= 0.1 A, IB= 0.010 A)
(IC= 0.5 A, IB= 0.050 A)
(IC= 1.0 A, IB= 0.100 A)
(IC= 2.0 A, IB= 0.200 A)|VCE(sat)|||0.030
0.060
0.100
0.180|V| |Base−Emitter Saturation Voltage (Note 4)
(IC= 1.0 A, IB= 0.100 A)|VBE(sat)|||1.10|V| |Base−Emitter Turn−on Voltage (Note 4) (IC= 1.0 A, VCE= 2.0 V)|VBE(on)|||0.850|V| |Cutoff Frequency (IC= 100 mA, VCE= 5.0 V, f = 100 MHz)|fT||100||MHz| |Input Capacitance (VEB= 0.5 V, f = 1.0 MHz)|Cibo||305||pF| |Output Capacitance (VCB= 3.0 V, f = 1.0 MHz)|Cobo||22||pF| 4. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%. **TYPICAL CHARACTERISTICS** **==> picture [243 x 172] intentionally omitted <==** **----- Start of picture text -----**
2.5
2.0
TC
1.5
1.0
TA
0.5
0
25 50 75 100 125 150
T, TEMPERATURE ( ° C)
, POWER DISSIPATION (W)
D
P
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**Figure 1. Power Derating** **http://onsemi.com** **2** **NSS1C201MZ4, NSV1C201MZ4** ## **TYPICAL CHARACTERISTICS** **==> picture [492 x 593] intentionally omitted <==** **----- Start of picture text -----**
400 400
360 150 ° C VCE = 2 V 360 150 ° C VCE = 4 V
320 320
280 280
240 240
200 25 ° C 200 25 ° C
160 160
120 −55 ° C 120 −55 ° C
80 80
40 40
0 0
0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
Figure 2. DC Current Gain Figure 3. DC Current Gain
1 1
IC /IB = 10 IC /IB = 20
150 ° C
0.1 0.1 25 ° C
150 ° C
−55 ° C
25 ° C −55 ° C
0.01 0.01
0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
Figure 4. Collector−Emitter Saturation Voltage Figure 5. Collector−Emitter Saturation Voltage
1.4 1.4
IC /IB = 10 IC /IB = 50
1.2 1.2
1 1 −55 ° C
150 ° C
0.8 0.8
25 ° C
0.6 25 ° C 0.6
150 ° C
0.4 −55 ° C 0.4
0.2 0.2
0 0
0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
, DC CURRENT GAIN , DC CURRENT GAIN
RE RE
h h
, COLLECTOR−EMITTER , COLLECTOR−EMITTER
BE(sat) SATURATOIN VOLTAGE (V) CE(sat) SATURATOIN VOLTAGE (V)
V V
, BASE−EMITTER SATUR- ATOIN VOLTAGE (V) , BASE−EMITTER SATUR- ATOIN VOLTAGE (V)
BE(sat) BE(sat)
V V
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**Figure 6. Base−Emitter Saturation Voltage** **Figure 7. Base−Emitter Saturation Voltage** **http://onsemi.com** **3** **NSS1C201MZ4, NSV1C201MZ4** ## **TYPICAL CHARACTERISTICS** **==> picture [493 x 381] intentionally omitted <==** **----- Start of picture text -----**
1.2 1.00
VCE = 2 V 0.5 A
1.0
−55 ° C 1 A 3 A
0.8
25 ° C IC = 0.1 A
2 A
0.6 0.10
150 ° C
0.4
0.2
TJ = 25 ° C
0.0 0.01
0.001 0.01 0.1 1 10 0.0001 0.001 0.01 0.1 1
IC, COLLECTOR CURRENT (A) IB, BASE CURRENT (A)
Figure 8. Base−Emitter Voltage Figure 9. Collector Saturation Region
400 50
350 TJ = 25J = 25 = 25 ° C 45 TJ = 25J = 25 = 25 ° C
fTEST = 1 MHzEST = 1 MHz = 1 MHz 40 fTEST = 1 MHzEST = 1 MHz = 1 MHz
300
35
250
30
200 25
20
150
15
100
10
50
5
0 0
0 1 2 3 4 5 6 7 8 0 10 20 30 40 50 60 70 80 90 100
VEB, BASE−EMITTER VOLTAGE (V) VCB, COLLECTOR BASE VOLTAGE (V)CB, COLLECTOR BASE VOLTAGE (V), COLLECTOR BASE VOLTAGE (V)
(V)
, COLLECTOR−EMITTER
, BASE−EMITTER VOLTAGE
SATURATOIN VOLTAGE (V)
CE(sat)
BE(on) V
V
, INPUT CAPACITANCE (pF) , OUTPUT CAPACITANCE (pF)
IB
C OB
C
**----- End of picture text -----**
**==> picture [494 x 389] intentionally omitted <==** **----- Start of picture text -----**
400 50
350 TJ = 25J = 25 = 25 ° C 45 TJ = 25J = 25 = 25 ° C
fTEST = 1 MHzEST = 1 MHz = 1 MHz 40 fTEST = 1 MHzEST = 1 MHz = 1 MHz
300
35
250
30
200 25
20
150
15
100
10
50
5
0 0
0 1 2 3 4 5 6 7 8 0 10 20 30 40 50 60 70 80 90 100
VEB, BASE−EMITTER VOLTAGE (V) VCB, COLLECTOR BASE VOLTAGE (V)CB, COLLECTOR BASE VOLTAGE (V), COLLECTOR BASE VOLTAGE (V)
Figure 10. Input Capacitance Figure 11. Output Capacitance
120 10
TJ = 25 ° C
100 fTEST = 1 MHz
VCE = 5 V 0.5 mS
80 1 100 mS 1 mS
60
10 mS
40 0.1
20
TJ = 25 ° C
0 0.01
0.001 0.01 0.1 1 10 1 10 100
IC, COLLECTOR CURRENT (A) VCE, COLLECTOR EMITTER VOLTAGE (V)
, INPUT CAPACITANCE (pF) , OUTPUT CAPACITANCE (pF)
IB
C OB
C
(MHz)
, CURRENT GAIN BANDWIDTH , COLLECTOR CURRENT (A)
IC
fTau
**----- End of picture text -----**
**Figure 13. Safe Operating Area** **Figure 12. Current Gain Bandwidth Product** **http://onsemi.com** **4** MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** **SOT−223 (TO−261)** CASE 318E−04 ISSUE R **SCALE 1:1** ## DATE 02 OCT 2018 **DOCUMENT NUMBER: 98ASB42680B** **DESCRIPTION: SOT−223 (TO−261)** Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. **PAGE 1 OF 2** ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. www.onsemi.com © Semiconductor Components Industries, LLC, 2018 DATE 02 OCT 2018 ## **SOT−223 (TO−261)** CASE 318E−04 ISSUE R STYLE 1: STYLE 2: STYLE 3: STYLE 4: STYLE 5: PIN 1. BASE PIN 1. ANODE PIN 1. GATE PIN 1. SOURCE PIN 1. DRAIN 2. COLLECTOR 2. CATHODE 2. DRAIN 2. DRAIN 2. GATE 3. EMITTER 3. NC 3. SOURCE 3. GATE 3. SOURCE 4. COLLECTOR 4. CATHODE 4. DRAIN 4. DRAIN 4. GATE STYLE 6: STYLE 7: STYLE 8: STYLE 9: STYLE 10: PIN 1. RETURN PIN 1. ANODE 1 CANCELLED PIN 1. INPUT PIN 1. CATHODE 2. INPUT 2. CATHODE 2. GROUND 2. ANODE 3. OUTPUT 3. ANODE 2 3. LOGIC 3. GATE 4. INPUT 4. CATHODE 4. GROUND 4. ANODE STYLE 11: STYLE 12: STYLE 13: PIN 1. MT 1 PIN 1. INPUT PIN 1. GATE 2. MT 2 2. OUTPUT 2. COLLECTOR 3. GATE 3. NC 3. EMITTER 4. MT 2 4. OUTPUT 4. COLLECTOR **GENERIC MARKING DIAGRAM*** AYW XXXXX 1 ~~|~~ A = Assembly Location Y = Year W = Work Week XXXXX = Specific Device Code = Pb−Free Package (Note: Microdot may be in either location) *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ ”, may or may not be present. Some products may not follow the Generic Marking. Electronic versions are uncontrolled except when accessed directly from the Document Repository. **DOCUMENT NUMBER: 98ASB42680B** Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. **DESCRIPTION: SOT−223 (TO−261) PAGE 2 OF 2** ~~—ee~~ ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. www.onsemi.com © Semiconductor Components Industries, LLC, 2018 **onsemi** , , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “ **onsemi** ” or its affiliates and/or subsidiaries in the United States and/or other countries. **onsemi** owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of **onsemi’s** product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. **onsemi** reserves the right to make changes at any time to any products or information herein, without notice. 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