# Small Signal Schottky Diode, Dual Common Cathode, 30 V, 200 mA, 800 mV, 600 mA, 125 °C
**URL**: https://novapart.co/products/NSR30CM3T5G/small-signal-schottky-diode-dual-common-cathode-30
**SKU**: NSR30CM3T5G
**Manufacturer**: ONSEMI
**Price**: €0.0450
**Stock**: 200+
**Lead Time**: 120 days (indicative)
## Specifications
| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | - |
| Qualification | - |
| Diode Mounting | Surface Mount |
| Diode Case Style | SOT-723 |
| Diode Configuration | Dual Common Cathode |
| Forward Voltage Max | 800mV |
| Forward Surge Current | 600mA |
| Reverse Recovery Time | 5ns |
| Average Forward Current | 200mA |
| Operating Temperature Max | 125°C |
| Repetitive Peak Reverse Voltage | 30V |
## Datasheet
📄 [Download PDF](https://novapart.co/datasheet/farnell:3385446RL/)
## NSR30CM3
## Dual Common Cathode Schottky Barrier Diodes
These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand−held and portable applications where space is limited.
## **www.onsemi.com**
## **30 VOLTS DUAL COMMON CATHODE SCHOTTKY BARRIER DIODES**
## **Features**
- Extremely Fast Switching Speed
- Low Forward Voltage − 0.35 V (Typ) @ IF = 10 mA
- NSVR Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
3 Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • This is a Pb−Free Device &S 2 1 **SOT−723 MAXIMUM RATINGS** (TJ = 125 ° C unless otherwise noted) **CASE 631AA STYLE 3 Rating Symbol Value Unit** Reverse Voltage VR 30 Volts 1 2 Forward Power Dissipation PF ANODE ANODE @ TA = 25 ° C 190 mW Derate above 25 ° C 1.9 mW/ ° C 3 CATHODE Forward Current (DC) IF 200 Max mA Junction Temperature TJ 125 Max ° C **MARKING DIAGRAM** Storage Temperature Range Tstg −55 to +150 ° C Thermal Resistance R JA 525 ° C/W 5C D Junction−to−Ambient (Note 1) ~~=—a=~~ Stresses exceeding those listed in the Maximum Ratings table may damage the 1 device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 5C = Specific Device Code 1. FR−4 board with minimum mounting pad. D = Date Code **ORDERING INFORMATION Device Package Shipping**[†] NSR30CM3T5G SOT−723 8000/Tape & Reel (Pb−Free) NSVR30CM3T5G SOT−723 8000/Tape & Reel (Pb−Free) ~~+~~
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
Publication Order Number: **NSR30CM3T5G/D**
© Semiconductor Components Industries, LLC, 2016 **December, 2016 − Rev. 5**
**1**
## **NSR30CM3**
**ELECTRICAL CHARACTERISTICS** (TA = 25 ° C unless otherwise noted) (EACH DIODE)
|**ELECTRICAL CHARACTERISTICS**(TA= 25°C unless otherwise not|ed) (EACH DI|ODE)||||
|---|---|---|---|---|---|
|**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|
|Reverse Breakdown Voltage
(IR= 10�A)|V(BR)R|30|−|−|V|
|Total Capacitance
(VR= 1.0 V, f = 1.0 MHz)|CT|−|7.6|10|pF|
|Reverse Leakage
(VR= 25 V)|IR|−|0.5|2.0|�A|
|Forward Voltage
(IF= 0.1 mA)
(IF= 1.0 mA)
(IF= 10 mA)
(IF= 30 mA)
(IF= 100 mA)|VF|−
−
−
−
−|0.22
0.29
0.35
0.41
0.52|0.24
0.32
0.40
0.50
0.80|V|
|Reverse Recovery Time
(IF= IR= 10 mA, IR(REC)= 1.0 mA, Figure 1)|trr|−|−|5.0|ns|
|Forward Current (DC)|IF|−|−|200|mA|
|Repetitive Peak Forward Current|IFRM|−|−|300|mA|
|Non−Repetitive Peak Forward Current (t < 1.0 s)|IFSM|−|−|600|mA|
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
**www.onsemi.com**
**2**
**NSR30CM3**
**==> picture [486 x 178] intentionally omitted <==**
**----- Start of picture text -----**
820 �
+10 V 2 k
100 � H IF 0.1 � F tr t p T IF
0.1 � F 10% t rr T
DUT
50 � OUTPUT 50 � INPUT 90%
PULSE SAMPLING iR(REC) = 1 mA
GENERATOR OSCILLOSCOPE VR IR OUTPUT PULSE
INPUT SIGNAL
(IF = IR = 10 mA; measured
at iR(REC) = 1 mA)
Notes: 1. A 2.0 k � variable resistor adjusted for a Forward Current (IF) of 10 mA.
Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.
Notes: 3. tp » trr
**----- End of picture text -----**
**Figure 1. Recovery Time Equivalent Test Circuit**
**==> picture [490 x 170] intentionally omitted <==**
**----- Start of picture text -----**
100 1000
125 ° C TA = 150 ° C
85 ° C 100 TA = 125 ° C
10 10
150 ° C 1.0
TA = 85 ° C
1.0 0.1
25 ° C −40 ° C −55 ° C 0.01 T A = 25 ° C
0.1 0.001
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0 5 10 15 20 25 30
VF, FORWARD VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS)
A)
�
, REVERSE CURRENT (
, FORWARD CURRENT (mA)IF IR
**----- End of picture text -----**
**Figure 2. Forward Voltage**
**Figure 3. Leakage Current**
**==> picture [237 x 172] intentionally omitted <==**
**----- Start of picture text -----**
14
12
10
8
6
4
2
0
0 5 10 15 20 25 30
VR, REVERSE VOLTAGE (VOLTS)
, TOTAL CAPACITANCE (pF)
T
C
**----- End of picture text -----**
**Figure 4. Total Capacitance**
**www.onsemi.com**
**3**
**NSR30CM3**
## **PACKAGE DIMENSIONS**
**SOT−723** CASE 631AA ISSUE D
**==> picture [432 x 361] intentionally omitted <==**
**----- Start of picture text -----**
−X− NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
D Y14.5M, 1994.
b1 A 2. CONTROLLING DIMENSION: MILLIMETERS.
3 −Y− 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
E H E 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS.
1 2
a 2X b MILLIMETERS
C DIM MIN NOM MAX
2X e 0.08 X Y A 0.45 0.50 0.55
SIDE VIEW b 0.15 0.21 0.27
TOP VIEW b1 0.25 0.31 0.37
C 0.07 0.12 0.17
3X L D 1.15 1.20 1.25
1 E 0.75 0.80 0.85
e 0.40 BSC
H E 1.15 1.20 1.25
L 0.29 REF
L2 0.15 0.20 0.25
STYLE 3:
3X L2 ys 6 PIN 1. ANODE
BOTTOM VIEW 2. 3. ANODECATHODE
RECOMMENDED
SOLDERING FOOTPRINT*
2X
0.40
2X 0.27
“Ar
PACKAGE
OUTLINE
NEE
1.50
|
3X 0.52 pee 0.36
DIMENSIONS: MILLIMETERS
**----- End of picture text -----**
*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
## **PUBLICATION ORDERING INFORMATION**
**LITERATURE FULFILLMENT** : **N. American Technical Support** : 800−282−9855 Toll Free **ON Semiconductor Website** : **www.onsemi.com** Literature Distribution Center for ON Semiconductor USA/Canada 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA **Europe, Middle East and Africa Technical Support: Order Literature** : http://www.onsemi.com/orderlit **Phone** : 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 **Fax** : 303−675−2176 or 800−344−3867 Toll Free USA/Canada **Japan Customer Focus Center** For additional information, please contact your local **Email** : orderlit@onsemi.com Phone: 81−3−5817−1050 Sales Representative ◊ **www.onsemi.com NSR30CM3T5G/D**
## **LITERATURE FULFILLMENT** :
◊
**4**
## Links
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- [Supplier page](https://es.farnell.com/on-semiconductor/nsr30cm3t5g/schottky-diode-30v-0-2a-sot-723/dp/3385446RL)
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