# Small Signal Schottky Diode, Single, 40 V, 200 mA, 560 mV, 1 A, 125 °C

![Product image](https://novapart.co/image/farnell:2317401/)

**URL**: https://novapart.co/products/NSR0340P2T5G/small-signal-schottky-diode-single-40-v-200-ma-560
**SKU**: NSR0340P2T5G
**Manufacturer**: ONSEMI
**Price**: €0.0240
**Stock**: 10+
**Lead Time**: 120 days (indicative)

## Description

Diode Configuration:Single; Repetitive Reverse Voltage Vrrm Max:40V; Forward Current If(AV):200mA; Forward Voltage VF Max:560mV; Forward Surge Current Ifsm Max:1A; Operating Tempe

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 2Pins |
| Product Range | NSR03 |
| Qualification | AEC-Q101 |
| Diode Mounting | Surface Mount |
| Diode Case Style | SOD-923 |
| Diode Configuration | Single |
| Forward Voltage Max | 560mV |
| Forward Surge Current | 1A |
| Reverse Recovery Time | 3ns |
| Average Forward Current | 200mA |
| Operating Temperature Max | 125°C |
| Repetitive Peak Reverse Voltage | 40V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2317401/)

NSR0340P2 

## Schottky Barrier Diode 

Schottky barrier diodes are optimized for very low forward voltage drop and low leakage current and are used in a wide range of dc−dc converter, clamping and protection applications in portable devices. NSR0340P2 in a SOD−923 miniature package enables designers to meet the challenging task of achieving higher efficiency and meeting reduced space requirements. 

## **Features** 

- Very Low Forward Voltage Drop − 420 mV @ 100 mA 

- Low Reverse Current − 0.6 A @ 10 V 

**www.onsemi.com** 

## **40 V SCHOTTKY BARRIER DIODE** 

- Continuous Forward Current − 200 mA 

- Power Dissipation with Minimum Trace − 190 mW 

- Very High Switching Speed − 3.0 ns @ 10 mA 

- Low Capacitance − 4 pF @ 5.0 V 

**==> picture [84 x 16] intentionally omitted <==**

**----- Start of picture text -----**<br>
1 2<br>CATHODE ANODE<br>**----- End of picture text -----**<br>


- This is a Pb−Free Device 

## **Typical Applications** 

- LCD and Keypad Backlighting 

- Camera Photo Flash 

- Buck and Boost dc−dc Converters 

- Reverse Voltage and Current Protection 

**==> picture [151 x 65] intentionally omitted <==**

**----- Start of picture text -----**<br>
MARKING<br>2 DIAGRAM<br>&<br>1<br>SOD−923   M<br>CASE 514AB<br>1 2<br>R<br>**----- End of picture text -----**<br>


- Clamping & Protection 

## **Markets** 

R = Specific Device Code M = Month Code 

- Mobile Handsets 

- MP3 Players 

- Digital Camera and Camcorders 

- Notebook PCs & PDAs 

- GPS 

## **MAXIMUM RATINGS** 

|**MAXIMUM RATINGS**||||
|---|---|---|---|
|**Rating**|**Symbol**|**Value**|**Unit**|
|Reverse Voltage|VR|40|V|
|Forward Current (DC)|IF|200|mA|
|Non−Repetitive Peak Forward Surge<br>Current|IFSM|1.0|A|
|ESD Rating:<br>Human Body Model<br>Machine Model|ESD|Class 2<br>Class A||



## **ORDERING INFORMATION** 

|**Device**<br>**Package**|**Shipping**†|
|---|---|
|NSR0340P2T5G<br>SOD−923|2 mm Pitch|
|(Pb−Free)|8000 / Tape & Reel|
|†For information on tape and reel specifications,||
|including part orientation and tape sizes, please||
|refer to our Tape and Reel Packaging Specifications||
|Brochure, BRD8011/D.||



Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 

Publication Order Number: **NSR0340P2/D** 

**1** 

© Semiconductor Components Industries, LLC, 2008 **March, 2017 − Rev. 1** 

**NSR0340P2** 

## **THERMAL CHARACTERISTICS** 

|**THERMAL CHARACTERISTICS**||||
|---|---|---|---|
|**Characteristic**|**Symbol**|**Max**|**Unit**|
|Thermal Resistance<br>Junction−to−Ambient (Note 1)<br>Total Power Dissipation @ TA= 25°C|R�JA<br>PD|520<br>190|°C/W<br>mW|
|Thermal Resistance<br>Junction−to−Ambient (Note 2)<br>Total Power Dissipation @ TA= 25°C|R�JA<br>PD|175<br>570|°C/W<br>mW|
|Junction and Storage Temperature Range|TJ, Tstg|−55 to +125|°C|



1. Mounted onto a 4 in square FR−4 board 10 mm sq. 1 oz. Cu 0.06” thick single sided. Operating to steady state. 

2. Mounted onto a 4 in square FR−4 board 1 in sq. 1 oz. Cu 0.06” thick single sided. Operating to steady state. 

## **ELECTRICAL CHARACTERISTICS** (TA = 25 ° C unless otherwise noted) 

|**ELECTRICAL CHARACTERISTICS**(TA= 25°C unless otherwise note|d)|||||
|---|---|---|---|---|---|
|**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|
|Reverse Leakage<br>(VR= 10 V)<br>(VR= 40 V)|IR||0.6<br>4.0|5.0<br>20|�A|
|Forward Voltage<br>(IF= 10 mA)<br>(IF= 100 mA)<br>(IF= 200 mA)|VF||290<br>420<br>520|320<br>460<br>560|mV|
|Total Capacitance<br>(VR= 5.0 V, f = 1 MHz)|CT||4.0||pF|
|Reverse Recovery Time<br>(IF= IR= 10 mA, IR= 1.0 mA)|trr||3.0||ns|



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 

**==> picture [430 x 265] intentionally omitted <==**

**----- Start of picture text -----**<br>
DC Current<br>Source<br>+ − tr t p<br>0.1  � F 0 V<br>10%<br>750  � H IF VR 90%<br>50  �  Output 0.1  � F Pulse Generator<br>Pulse Output<br>Generator IF<br>Adjust for IRM DUT t rr<br>RL = 50  �<br>iR(REC) = 1 mA<br>Current IRM<br>Transformer Output Pulse<br>(IF = IRM = 10 mA; measured<br>at iR(REC) = 1 mA)<br>50  �  Input<br>Oscilloscope<br>**----- End of picture text -----**<br>


1. DC Current Source is adjusted for a Forward Current (IF) of 10 mA. 

2. Pulse Generator Output is adjusted for a Peak Reverse Recovery Current IRM of 10 mA. 

3. Pulse Generator transition time << trr. 

4. IR(REC) is measured at 1 mA. Typically 0.1 X IRM or 0.25 X IRM. 

5. tp » trr 

**Figure 1. Recovery Time Equivalent Test Circuit** 

**www.onsemi.com** 

**2** 

**NSR0340P2** 

## **TYPICAL CHARACTERISTICS** 

**==> picture [492 x 400] intentionally omitted <==**

**----- Start of picture text -----**<br>
1000 10000<br>1000 125 ° C<br>100 100 85 ° C<br>10<br>125 ° C 25 ° C<br>10 1<br>25 ° C 0.1<br>1 85 ° C −40 ° C 0.01 −40 ° C<br>0.001<br>0.1 0.0001<br>0 0.1 0.2 0.3 0.4 0.5 0.6 0 5 10 15 20 25 30 35 40<br>VF, FORWARD VOLTAGE (V) VR, REVERSE VOLTAGE (V)<br>Figure 2.  Figure 3.<br>13<br>11<br>9<br>7<br>5<br>3<br>1<br>0 5 10 15 20 25 30 35 40<br>VR, REVERSE VOLTAGE (V)<br>Figure 4.<br>A)<br>�<br>, REVERSE CURRENT (<br>, FORWARD CURRENT (mA)IF IR<br>, TOTAL CAPACITANCE (pF)Ct<br>**----- End of picture text -----**<br>


**www.onsemi.com** 

**3** 

**NSR0340P2** 

## **PACKAGE DIMENSIONS** 

**SOD−923** CASE 514AB ISSUE C 

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−X−<br>D<br>−Y−<br>E<br>1 2<br>2X b +h<br>0.08 X Y<br>TOP VIEW<br>A<br>c a HE<br>SIDE VIEW<br>2X L<br>r<br>2X L2 es<br>BOTTOM VIEW<br>**----- End of picture text -----**<br>


- NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 

2. CONTROLLING DIMENSION: MILLIMETERS. 

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3. MAXIMUM LEAD THICKNESS INCLUDES LEAD<br>FINISH. MINIMUM LEAD THICKNESS IS THE<br>MINIMUM THICKNESS OF BASE MATERIAL.<br>4. DIMENSIONS D AND E DO NOT INCLUDE MOLD<br>FLASH, PROTRUSIONS, OR GATE BURRS.<br>MILLIMETERS INCHES<br>DIM MIN NOM MAX MIN NOM MAX<br>A 0.34 0.37 0.40 0.013 0.015 0.016<br>==———— b 0.15 0.20 0.25 0.006 0.008 0.010<br>c 0.07 0.12 0.17 0.003 0.005 0.007<br>D 0.75 0.80 0.85 0.030 0.031 0.033<br>E 0.55 0.60 0.65 0.022 0.024 0.026<br>HE 0.95 1.00 1.05 0.037 0.039 0.041<br>L 0.19 REF 0.007 REF<br>L2 0.05 0.10 0.15 0.002 0.004 0.006<br>—————<br>SOLDERING FOOTPRINT*<br>1.20<br>2X<br>0.36 2X<br>0.25<br>t P<br>PACKAGE<br>e p s<br>OUTLINE<br>DIMENSIONS: MILLIMETERS<br>**----- End of picture text -----**<br>


See Application Note AND8455/D for more mounting details 

*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 

ON Semiconductor and      are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 

## **PUBLICATION ORDERING INFORMATION** 

**LITERATURE FULFILLMENT** : **N. American Technical Support** : 800−282−9855 Toll Free **ON Semiconductor Website** : **www.onsemi.com** Literature Distribution Center for ON Semiconductor USA/Canada 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA **Europe, Middle East and Africa Technical Support: Order Literature** : http://www.onsemi.com/orderlit **Phone** : 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 **Fax** : 303−675−2176 or 800−344−3867 Toll Free USA/Canada **Japan Customer Focus Center** For additional information, please contact your local **Email** : orderlit@onsemi.com Phone: 81−3−5817−1050 Sales Representative 

## **LITERATURE FULFILLMENT** : 

◊ 

**www.onsemi.com** 

**NSR0340P2/D** 

**4** 



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