# Bipolar Transistor Array, NPN, 40 V, 600 mA, 380 mW ![Product image](https://novapart.co/image/farnell:2724367/) **URL**: https://novapart.co/products/NSM6056MT1G/bipolar-transistor-array-npn-40-v-600-ma-380-mw **SKU**: NSM6056MT1G **Manufacturer**: ONSEMI **Category**: Semiconductors - Discretes || Transistors || Bipolar Transistors || Bipolar Junction Transistor Arrays - BJT **Price**: €0.0400 **Stock**: 10+ **Lead Time**: 92 days (indicative) ## Description Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:40V; Power Dissipation Pd:380mW; DC Collector Current:600mA; DC Current Gain hFE:20hFE; Transistor Case Style:SC-74; No. of P ## Specifications | Parameter | Value | |---|---| | Msl | MSL 1 - Unlimited | | Svhc | No SVHC (25-Jun-2025) | | No. Of Pins | 6Pins | | Product Range | - | | Qualification | - | | Transistor Mounting | Surface Mount | | Transistor Polarity | NPN | | Power Dissipation Npn | 380mW | | Power Dissipation Pnp | - | | Transistor Case Style | SC-74 | | Transition Frequency Npn | 250MHz | | Transition Frequency Pnp | - | | Operating Temperature Max | 150°C | | Dc Current Gain Hfe Min Npn | 20hFE | | Dc Current Gain Hfe Min Pnp | - | | Continuous Collector Current Npn | 600mA | | Continuous Collector Current Pnp | - | | Collector Emitter Voltage Max Npn | 40V | | Collector Emitter Voltage Max Pnp | - | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:2724367/) ## NSM6056MT1G ## NPN Transistor with Zener Diode ## **Features** - These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant ## **Typical Applications** - Driving Circuit ## **http://onsemi.com** ## **NPN Transistor with Zener Diode** - Switching Applications **MAXIMUM RATINGS − NPN TRANSISTOR** **Rating Symbol Value Unit** Collector−Emitter Voltage VCEO 40 V Collector−Base Voltage VCBO 60 V Emitter−Base Voltage VEBO 6.0 V Collector Current − Continuous IC 600 mA Collector Current − Peak ICM 900 mA ~~OE~~ **MAXIMUM RATINGS − ZENER DIODE Rating Symbol Value Unit** Forward Voltage @ IF = 10 mA VF 0.9 V ~~——FFF~~ ## **THERMAL CHARACTERISTICS** |**THERMAL CHARACTERISTICS**|||| |---|---|---|---| |**Rating**|**Symbol**|**Max**|**Unit**| |Total Device Dissipation FR−5 Board,
(Note 1) @ TA= 25°C
~~re~~|PD
~~ee~~|380
~~ee~~|mW
~~ee~~| |Thermal Resistance from
Junction−to−Ambient
~~re~~
~~ee~~|R JA
~~ee~~
~~ee~~|328
~~ee~~
~~ee~~|°C/W
~~ee~~
~~ee~~| |Junction and Storage
Temperature Range
~~re ~~
~~ee~~|TJ, Tstg
~~ee~~
~~ee~~|−55 to +150
~~ee~~
~~ee~~|°C
~~ee~~
~~ee~~| Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR−4 Minimum Pad. **==> picture [74 x 78] intentionally omitted <==** **----- Start of picture text -----**
6 5 4
E LL|
Z1 Q1
1 2 3
**----- End of picture text -----**
**==> picture [114 x 173] intentionally omitted <==** **----- Start of picture text -----**
6 5 4
SC−74
3 CASE 318F
1 [2]
¢
MARKING DIAGRAM
M60M
T U T
M60 = Device Code
M = Date Code*
| = Pb−Free Package
**----- End of picture text -----**
(Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. **ORDERING INFORMATION** **Device Package Shipping**[†] NSM6056MT1G SC−74 3000/Tape & Reel (Pb−Free) ~~Tr~~ †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Publication Order Number: **1** © Semiconductor Components Industries, LLC, 2011 **March, 2011 − Rev. 0** **NSM6056M/D** **NSM6056MT1G** **NPN TRANSISTOR − ELECTRICAL CHARACTERISTICS** (TA = 25 ° C unless otherwise noted) |**NPN TRANSISTOR − ELECTRICAL CHARACTERISTICS**(TA= 25°C unles|**NPN TRANSISTOR − ELECTRICAL CHARACTERISTICS**(TA= 25°C unles|s otherwise note|d)||| |---|---|---|---|---|---| |**Characteristic**||**Symbol**|**Min**|**Max**|**Unit**| |**OFF CHARACTERISTICS**|||||| |Collector−Emitter Breakdown Voltage (Note 3)
(IC= 1.0 mAdc, IB= 0)||V(BR)CEO|40|−|Vdc| |Collector−Base Breakdown Voltage|(IC= 0.1 mAdc, IE= 0)|V(BR)CBO|60|−|Vdc| |Emitter−Base Breakdown Voltage|(IE= 0.1 mAdc, IC= 0)|V(BR)EBO|6.0|−|Vdc| |Base Cutoff Current|(VCE= 35 Vdc, VEB= 0.4 Vdc)|IBEV|−|0.1|�Adc| |Collector Cutoff Current|(VCE= 35 Vdc, VEB= 0.4 Vdc)|ICEX|−|0.1|�Adc| |**ON CHARACTERISTICS**(Note 3)|||||| |DC Current Gain|(IC= 0.1 mAdc, VCE= 1.0 Vdc)
(IC= 1.0 mAdc, VCE= 1.0 Vdc)
(IC= 10 mAdc, VCE= 1.0 Vdc)
(IC= 150 mAdc, VCE= 1.0 Vdc)
(IC= 500 mAdc, VCE= 2.0 Vdc)|hFE|20
40
80
100
40|−
−
−
300
−|−| |Collector−Emitter Saturation Voltage|(IC= 150 mAdc, IB= 15 mAdc)
(IC= 500 mAdc, IB= 50 mAdc)|VCE(sat)|−
−|0.4
0.75|Vdc| |Base−Emitter Saturation Voltage|(IC= 150 mAdc, IB= 15 mAdc)
(IC= 500 mAdc, IB= 50 mAdc)|VBE(sat)|0.75
−|0.95
1.2|Vdc| |**SMALL−SIGNAL CHARACTERISTICS**|||||| |Current−Gain − Bandwidth Product
(IC=|20 mAdc, VCE= 10 Vdc, f = 100 MHz)|fT|250|−|MHz| |Collector−Base Capacitance|(VCB= 5.0 Vdc, IE= 0, f = 1.0 MHz)|Ccb|−|6.5|pF| |Emitter−Base Capacitance|(VEB= 0.5 Vdc, IC= 0, f = 1.0 MHz)|Ceb|−|30|pF| |Input Impedance
(IC=|1.0 mAdc, VCE= 10 Vdc, f = 1.0 kHz)|hie|1.0|15|k�| |Voltage Feedback Ratio
(IC=|1.0 mAdc, VCE= 10 Vdc, f = 1.0 kHz)|hre|0.1|8.0|X 10−4| |Small−Signal Current Gain
(IC=|1.0 mAdc, VCE= 10 Vdc, f = 1.0 kHz)|hfe|40|500|−| |Output Admittance
(IC=|1.0 mAdc, VCE= 10 Vdc, f = 1.0 kHz)|hoe|1.0|30|�mhos| |**SWITCHING CHARACTERISTICS**|||||| |Delay Time|(VCC= 30 Vdc, VEB= 2.0 Vdc,
IC= 150 mAdc, IB1= 15 mAdc)|td|−|15|ns| |Rise Time||tr|−|20|| |Storage Time|(VCC= 30 Vdc, IC= 150 mAdc,
IB1= IB2= 15 mAdc)|ts|−|225|ns| |Fall Time||tf|−|30|| 2. Pulse Test: Pulse Width ≤ 300 � s, Duty Cycle ≤ 2.0%. **ZENER DIODE − ELECTRICAL CHARACTERISTICS** (VF = 0.9 Max @ IF = 10 mA for all types) |**Device**|**Test**
**Current**
**Izt mA**|**Zener Voltage VZ**|**Zener Voltage VZ**|**ZZK IZ**
**= 0.5**
**mA�**
**Max**|**ZZT**
**IZ = IZT**
**@ 10%**
**Mod�**
**Max**|**Max**
**IR @ VR**|**Max**
**IR @ VR**|**dVZ/dt**
**@ IZT1**|**(mV/k)**
**= 5 mA**|**C pF Max @**
**VR = 0**
**f = 1 MHz**| |---|---|---|---|---|---|---|---|---|---|---| |||**Min**|**Max**|||**�A**|**V**|**Min**|**Max**|| |NSM6056MT1G|5.0|5.49|5.73|200|40|1.0|2.0|−2.0|2.5|200| **http://onsemi.com** **2** **NSM6056MT1G** ## **TYPICAL ELECTRICAL CHARACTERISTICS − NPN TRANSISTOR** **==> picture [486 x 602] intentionally omitted <==** **----- Start of picture text -----**
500
450 TJ = 150°C V V CE CE = 5.0 V = 2.0 V
400
VCE = 1.0 V
350
25°C
300
250
200 -�55°C
150
100
50
0
0.01 0.1 1
IC, COLLECTOR CURRENT (A)
Figure 1. DC Current Gain
1.2
1.0
0.8
IC = 1.0 mA 10 mA 100 mA 300 mA 500 mA
0.6
0.4
0.2
0
0.001 0.01 0.1 1 10 100
IB, BASE CURRENT (mA)
Figure 2. Collector Saturation Region
0.35
IC/IB = 10
0.30
0.25
150°C
0.20
0.15 25°C
0.10
-55°C
0.05
0
0.0001 0.001 0.01 0.1 1
IC, COLLECTOR CURRENT (A)
FE
h , DC CURRENT GAIN
CE
V , COLLECTOR-EMITTER VOLTAGE (VOLTS)
VCE(sat), COLLECTOR-EMITTER SATURATION VOLTAGE (V)
**----- End of picture text -----**
**Figure 3. Collector−Emitter Saturation Voltage vs. Collector Current** **http://onsemi.com** **3** **NSM6056MT1G** ## **TYPICAL ELECTRICAL CHARACTERISTICS − NPN TRANSISTOR** **==> picture [490 x 396] intentionally omitted <==** **----- Start of picture text -----**
1.1 1.0
IC/IB = 10 VCE = 2.0 V
1.0 0.9
0.9 −55 ° C
0.8
−55 ° C
0.8
0.7
0.7 25 ° C
25 ° C 0.6
0.6
0.5
0.5
0.4 150 ° C 0.4 150 ° C
0.3 0.3
0.0001 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
Figure 4. Base−Emitter Saturation Voltage vs. Figure 5. Base−Emitter Turn On Voltage vs.
Collector Current Collector Current
1000
VCE = 1.0 V
TA = 25 ° C
100
10
0.1 1 10 100 1000
IC, COLLECTOR CURRENT (mA)
VOLTAGE (V)
, BASE−EMITTER SATURA- TION VOLTAGE (V) , BASE−EMITTER TURN ON
BE(sat) BE(on)
V V
, CURRENT−GAIN−BANDWIDTH (MHz)
fT
**----- End of picture text -----**
**Figure 6. Current−Gain−Bandwidth Product** ## **TYPICAL ELECTRICAL CHARACTERISTICS − ZENER DIODE** **==> picture [246 x 168] intentionally omitted <==** **----- Start of picture text -----**
1000
100
150 ° C
10
75 ° C 25 ° C 0 ° C
1.0
0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
VF, FORWARD VOLTAGE (V)
IF, FORWARD CURRENT (mA)
**----- End of picture text -----**
**Figure 7. Typical Forward Voltage** **http://onsemi.com** **4** MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** **==> picture [486 x 44] intentionally omitted <==** **----- Start of picture text -----**
SC−74
6 CASE 318F
ISSUE P
1
DATE 07 OCT 2021
SCALE 2:1
**----- End of picture text -----**
**==> picture [87 x 67] intentionally omitted <==** ## **GENERIC MARKING DIAGRAM*** XXX M � � XXX = Specific Device Code M = Date Code � = Pb−Free Package (Note: Microdot may be in either location) *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ � ”, may or may not be present. Some products may not follow the Generic Marking. STYLE 1: STYLE 2: STYLE 3: PIN 1. CATHODE PIN 1. NO CONNECTION PIN 1. EMITTER 1 2. ANODE 2. COLLECTOR 2. BASE 1 3. CATHODE 3. EMITTER 3. COLLECTOR 2 4. CATHODE 4. NO CONNECTION 4. EMITTER 2 5. ANODE 5. COLLECTOR 5. BASE 2 6. CATHODE 6. BASE 6. COLLECTOR 1 STYLE 7: STYLE 8: STYLE 9: PIN 1. SOURCE 1 PIN 1. EMITTER 1 PIN 1. EMITTER 2 2. GATE 1 2. BASE 2 2. BASE 2 3. DRAIN 2 3. COLLECTOR 2 3. COLLECTOR 1 4. SOURCE 2 4. EMITTER 2 4. EMITTER 1 5. GATE 2 5. BASE 1 5. BASE 1 6. DRAIN 1 6. COLLECTOR 1 6. COLLECTOR 2 STYLE 4: STYLE 5: STYLE 6: PIN 1. COLLECTOR 2 PIN 1. CHANNEL 1 PIN 1. CATHODE 2. EMITTER 1/EMITTER 2 2. ANODE 2. ANODE 3. COLLECTOR 1 3. CHANNEL 2 3. CATHODE 4. EMITTER 3 4. CHANNEL 3 4. CATHODE 5. BASE 1/BASE 2/COLLECTOR 3 5. CATHODE 5. CATHODE 6. BASE 3 6. CHANNEL 4 6. CATHODE STYLE 10: STYLE 11: PIN 1. ANODE/CATHODE PIN 1. EMITTER 2. BASE 2. BASE 3. EMITTER 3. ANODE/CATHODE 4. COLLECTOR 4. ANODE 5. ANODE 5. CATHODE 6. CATHODE 6. COLLECTOR ## **DOCUMENT NUMBER: 98ASB42973B** **DESCRIPTION: SC−74** Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. **PAGE 1 OF 1** **onsemi** and are trademarks of Semiconductor Components Industries, LLC dba **onsemi** or its subsidiaries in the United States and/or other countries. **onsemi** reserves the right to make changes without further notice to any products herein. **onsemi** makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. **onsemi** does not convey any license under its patent rights nor the rights of others. www.onsemi.com © Semiconductor Components Industries, LLC, 2019 **onsemi** , , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “ **onsemi** ” or its affiliates and/or subsidiaries in the United States and/or other countries. **onsemi** owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. 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