# Bipolar Pre-Biased / Digital Transistor, Single NPN, 50 V, 100 mA ![Product image](https://novapart.co/image/farnell:3617212/) **URL**: https://novapart.co/products/NSBC114EF3T5G/bipolar-pre-biased-digital-transistor-single-npn **SKU**: NSBC114EF3T5G **Manufacturer**: ONSEMI **Category**: Semiconductors - Discretes || Transistors || Bipolar Transistors || Pre-Biased / Digital Bipolar Transistors **Price**: €0.0300 **Stock**: 10+ **Lead Time**: 78 days (indicative) ## Specifications | Parameter | Value | |---|---| | Msl | MSL 1 - Unlimited | | Svhc | No SVHC (25-Jun-2025) | | No. Of Pins | 3 Pin | | Product Range | - | | Qualification | - | | Power Dissipation | 297mW | | Transistor Mounting | Surface Mount | | Transistor Polarity | Single NPN | | Transistor Case Style | SOT-1123 | | Base Input Resistor R1 | - | | Dc Current Gain Hfe Min | 35hFE | | Base Emitter Resistor R2 | - | | Operating Temperature Max | 150°C | | Continuous Collector Current | 100mA | | Collector Emitter Voltage Max Npn | 50V | | Collector Emitter Voltage Max Pnp | - | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:3617212/) **Share Feedback DATA SHEET** Your Opinion Matters **www.onsemi.com** ~~ee~~ ## Digital Transistors (BRT) R1 = 10 k R2 = 10 k ## **PIN CONNECTIONS** **==> picture [148 x 95] intentionally omitted <==** **----- Start of picture text -----**
PIN 3
COLLECTOR
(OUTPUT)
PIN 1 R1
BASE
(INPUT) R2
PIN 2
EMITTER
(GROUND)
**----- End of picture text -----**
## **NPN Transistors with Monolithic Bias Resistor Network** ## MUN2211, MMUN2211L, MUN5211, DTC114EE, DTC114EM3, NSBC114EF3 **MARKING DIAGRAMS** **==> picture [480 x 328] intentionally omitted <==** **----- Start of picture text -----**
This series of digital transistors is designed to replace a single
device and its external resistor bias network. The Bias Resistor
Transistor (BRT) contains a single transistor with a monolithic SC-59
bias network consisting of two resistors; a series base resistor and XX M CASE 318D
STYLE 1
a base-emitter resistor. The BRT eliminates these individual
1
components by integrating them into a single device. The use of a BRT 2,
can reduce both system cost and board space.
SOT-23
Features XXX M CASE 318
• Simplifies Circuit Design STYLE 6
• Reduces Board Space en 1
• Reduces Component Count SC-70/SOT-323
• S and NSV Prefix for Automotive and Other Applications Requiring XX M CASE 419
Unique Site and Control Change Requirements; AEC-Q101 STYLE 3
e 1 05
Qualified and PPAP Capable
• These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS SC-75
XX M CASE 463
Compliant STYLE 1
¢ F 1
MAXIMUM RATINGS (TA = 25 ° C) SOT-723
Rating Symbol Max Unit XX M CASE 631AA
Collector-Base Voltage VCBOCBO 50 Vdc 1 STYLE 1
Collector-Emitter Voltage VCEOCEO 50 Vdc SOT-1123
X M 1 CASE 524AA
Collector Current - Continuous ICC 100 mAdc STYLE 1
Input Forward Voltage VIN(fwd)IN(fwd) 40 Vdc
XXX = Specific Device Code
=—— Input Reverse Voltage VIN(rev)IN(rev)(rev)rev)) 10 Vdc M = Date Code*
Stresses exceeding those listed in the Maximum Ratings table may damage the = Pb-Free Package
**----- End of picture text -----**
## **Features** - Simplifies Circuit Design - Reduces Board Space - Reduces Component Count - S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable - These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant **Rating Symbol Max Unit** Collector-Base Voltage VCBOCBO 50 Vdc Collector-Emitter Voltage VCEOCEO 50 Vdc Collector Current - Continuous ICC 100 mAdc Input Forward Voltage VIN(fwd)IN(fwd) 40 Vdc ~~=——~~ Input Reverse Voltage VIN(rev)IN(rev)(rev)rev)) 10 Vdc Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. (Note: Microdot may be in either location) - Date Code orientation may vary depending upon manufacturing location. ## **ORDERING INFORMATION** See detailed ordering, marking, and shipping information in the package dimensions section on page 2 of this data sheet. Publication Order Number: **DTC114E/D** **1** © Semiconductor Components Industries, LLC, 2000 **October, 2025 − Rev. 10** **MUN2211, MMUN2211L, MUN5211, DTC114EE, DTC114EM3, NSBC114EF3** ## **Table 1. ORDERING INFORMATION** |**Table 1. ORDERING INFORMATION**|||| |---|---|---|---| |**Device**|**Part Marking**|**Package**|**Shipping**†| |MUN2211T1G, SMUN2211T1G|8A|SC-59
(Pb-Free)|3000 / Tape & Reel| |MUN2211T3G, SMUN2211T3G|8A|SC-59
(Pb-Free)|10000 / Tape & Reel| |MMUN2211LT1G, SMMUN2211LT1G|A8A|SOT-23
(Pb-Free)|3000 / Tape & Reel| |MMUN2211LT3G, SMMUN2211LT3G|A8A|SOT-23
(Pb-Free)|10000 / Tape & Reel| |MUN5211T1G, SMUN5211T1G|8A|SC-70/SOT-323
(Pb-Free)|3000 / Tape & Reel| |SMUN5211T3G|8A|SC-70/SOT-323
(Pb-Free)|10000 / Tape & Reel| |DTC114EET1G, SDTC114EET1G|8A|SC-75
(Pb-Free)|3000 / Tape & Reel| |DTC114EM3T5G, NSVDTC114EM3T5G|8A|SOT-723
(Pb-Free)|8000 / Tape & Reel| |NSBC114EF3T5G|A|SOT-1123
(Pb-Free)|8000 / Tape & Reel| † For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. **==> picture [243 x 172] intentionally omitted <==** **----- Start of picture text -----**
300
250 Hl|tt| |
200
So
(1) (2) (3) (4) (5)
150 TI N
100
ae DNen
50 Nee
0
pi ttt TIN
−50 −25 0 25 50 75 100 125 150
AMBIENT TEMPERATURE ( ° C)
, POWER DISSIPATION (mW)
D
P
**----- End of picture text -----**
(1) SC-75 and SC-70/SOT323; Minimum Pad (2) SC-59; Minimum Pad (3) SOT-23; Minimum Pad - (4) SOT-1123; 100 mm[2] , 1 oz. copper trace - (5) SOT-723; Minimum Pad **Figure 1. Derating Curve** **www.onsemi.comonsemi.com 2** ~~——~~ **www.onsemi.comonsemi.com** **Share Feedback** Your Opinion Matters **MUN2211, MMUN2211L, MUN5211, DTC114EE, DTC114EM3, NSBC114EF3** ## **Table 2. THERMAL CHARACTERISTICS** |**Table 2. THERMAL CHARACTERISTICS**|**Table 2. THERMAL CHARACTERISTICS**|**Table 2. THERMAL CHARACTERISTICS**|**Table 2. THERMAL CHARACTERISTICS**| |---|---|---|---| |**Characteristic**
**Symbol**
**Max**
**Unit**
**THERMAL CHARACTERISTICS (SC-59) (MUN2211)**
~~ee~~|||| |Total Device Dissipation|PD||| |TA= 25°C
(Note 1)||230|mW| |(Note 2)||338|| |Derate above 25°C
(Note 1)||1.8|mW/°C| |(Note 2)||2.7|| |Thermal Resistance,
(Note 1)
Junction to Ambient
(Note 2)
R JA
540
370
°C/W
~~ee~~|||| |Thermal Resistance,
(Note 1)
Junction to Lead
(Note 2)
R JL
264
287
°C/W
~~po~~|||| |Junction and Storage Temperature Range
TJ, Tstg
−55 to +150
°C
~~a~~|||| |**THERMAL CHARACTERISTICS (SOT-23) (MMUN2211L)**|||| |Total Device Dissipation|PD||| |TA= 25°C
(Note 1)||246|mW| |(Note 2)||400|| |Derate above 25°C
(Note 1)||2.0|mW/°C| |(Note 2)||3.2|| |Thermal Resistance,
(Note 1)
Junction to Ambient
(Note 2)
R JA
508
311
°C/W
~~ee~~|||| |Thermal Resistance,
(Note 1)
Junction to Lead
(Note 2)
R JL
174
208
°C/W
~~ee~~|||| |Junction and Storage Temperature Range
TJ, Tstg
−55 to +150
°C
~~a~~|||| |**THERMAL CHARACTERISTICS (SC-70/SOT-323) (MUN5211)**|||| |Total Device Dissipation|PD||| |TA= 25°C
(Note 1)||202|mW| |(Note 2)||310|| |Derate above 25°C
(Note 1)||1.6|mW/°C| |(Note 2)||2.5|| |Thermal Resistance,
(Note 1)
Junction to Ambient
(Note 2)
R JA
618
403
°C/W
~~po~~|||| |Thermal Resistance,
(Note 1)
Junction to Lead
(Note 2)
R JL
280
332
°C/W
~~po~~|||| |Junction and Storage Temperature Range
TJ, Tstg
−55 to +150
°C
~~Ge~~|||| |**THERMAL CHARACTERISTICS (SC-75) (DTC114EE)**|||| |Total Device Dissipation|PD||| |TA= 25°C
(Note 1)||200|mW| |(Note 2)||300|| |Derate above 25°C
(Note 1)||1.6|mW/°C| |(Note 2)||2.4|| |Thermal Resistance,
(Note 1)
Junction to Ambient
(Note 2)
R JA
600
400
°C/W
~~po~~|||| |Junction and Storage Temperature Range
TJ, Tstg
−55 to +150
°C
~~Ge~~|||| |**THERMAL CHARACTERISTICS (SOT-723) (DTC114EM3)**|||| |Total Device Dissipation|PD||| |TA= 25°C
(Note 1)||260|mW| |(Note 2)||600|| |Derate above 25°C
(Note 1)||2.0|mW/°C| |(Note 2)||4.8|| |Thermal Resistance,
(Note 1)
Junction to Ambient
(Note 2)
R JA
480
205
°C/W
~~LR~~|||| |1. FR-4 @ Minimum Pad.|||| 2. FR-4 @ 1.0 x 1.0 Inch Pad. 3. FR-4 @ 100 mm[2] , 1 oz. copper traces, still air. 4. FR-4 @ 500 mm[2] , 1 oz. copper traces, still air. **www.onsemi.comonsemi.com** ~~—~~ **3** **www.onsemi.comonsemi.com** **Share Feedback** Your Opinion Matters **MUN2211, MMUN2211L, MUN5211, DTC114EE, DTC114EM3, NSBC114EF3** ## **Table 2. THERMAL CHARACTERISTICS** **Characteristic Symbol Max Unit** ~~ee~~ **THERMAL CHARACTERISTICS (SOT-723) (DTC114EM3)** ~~a~~ Junction and Storage Temperature Range TJ, Tstg −55 to +150 ° C **THERMAL CHARACTERISTICS (SOT-1123) (NSBC114EF3)** Total Device Dissipation PD TA = 25 ° C (Note 3) 254 mW (Note 4) 297 Derate above 25 ° C (Note 3) 2.0 mW/ ° C (Note 4) 2.4 Thermal Resistance, (Note 3) R JA 493 ° C/W Junction to Ambient (Note 4) 421 ~~ee~~ Thermal Resistance, Junction to Lead (Note 3) R JL 193 ° C/W ~~a a~~ Junction and Storage Temperature Range TJ, Tstg −55 to +150 ° C 1. FR-4 @ Minimum Pad. 2. FR-4 @ 1.0 x 1.0 Inch Pad. 3. FR-4 @ 100 mm[2] , 1 oz. copper traces, still air. 4. FR-4 @ 500 mm[2] , 1 oz. copper traces, still air. **Table 3. ELECTRICAL CHARACTERISTICS** (TA = 25 ° C, unless otherwise noted) **Characteristic Symbol Min Typ Max Unit** ~~ee~~ **OFF CHARACTERISTICS** Collector-Base Cutoff Current ICBO nAdc (VCB = 50 V, IE = 0) − − 100 ~~ee~~ Collector-Emitter Cutoff Current ~~ee~~ ICEO ~~ee~~ nAdc (VCE = 50 V, IB = 0) − − 500 ~~ee~~ Emitter-Base Cutoff Current I ~~ee~~ EBO ~~ee~~ mAdc (VEB = 6.0 V, IC = 0) − − 0.5 ~~ee~~ Collector-Base Breakdown Voltage V(BR)CBO ~~ee ee~~ Vdc (IC = 10 A, IE = 0) 50 − − ~~ee~~ Collector-Emitter Breakdown Voltage (Note 5) V(BR)CEO Vdc (IC = 2.0 mA, IB = 0) 50 − − ~~LO~~ **ON CHARACTERISTICS** DC Current Gain (Note 5) hFE (IC = 5.0 mA, VCE = 10 V) 35 60 − ~~ee~~ Collector-Emitter Saturation Voltage (Note 5) VCE(sat) Vdc (IC = 10 mA, IB = 0.3 mA) − − 0.25 ~~ee~~ Input Voltage (off) ~~ee~~ Vi(off) Vdc (VCE = 5.0 V, IC = 100 A) − 1.2 0.8 ~~ee~~ Input Voltage (on) V ~~ee~~ i(on) Vdc (VCE = 0.3 V, IC = 10 mA) 2.5 1.8 − ~~ee~~ Output Voltage (on) VOL Vdc (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 k ) − − 0.2 ~~ee~~ Output Voltage (off) ~~ee~~ VOH ~~ee~~ Vdc (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 k ) 4.9 − − ~~ee~~ Input Resistor R1 7.0 10 13 k ~~a eeGcee QO~~ Resistor Ratio R1/R2 0.8 1.0 1.2 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 5. Pulsed Condition: Pulse Width = 300 sec, Duty Cycle ≤ 2%. **www.onsemi.com** ~~—~~ **4** **Share Feedback** Your Opinion Matters **MUN2211, MMUN2211L, MUN5211, DTC114EE, DTC114EM3, NSBC114EF3** ## **TYPICAL CHARACTERISTICS MUN2211, MMUN2211L, MUN5211, DTC114EE, DTC114EM3** **==> picture [489 x 390] intentionally omitted <==** **----- Start of picture text -----**
1 a | 1000 OS eS
IC/IB = 10 VCE = 10 V
ee eee Se ae
25 ° C TA = −25 ° C 25 ° C T A = 75 ° C
0.1 |ae 75 ° C Paee
−25 ° C
aaa 100 aE aallll
0.01
_———————— | rt PT
SS Pa eee
0.001 roo oeeote——“< ié‘ 10 «LCCC LTT
0 20 40 60 80 1 10 100
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Figure 2. VCE(sat) vs. IC Figure 3. DC Current Gain
3.6 100
TA = 75 ° C −25 ° C
3.2 Ty f = 10 kHz SS
Ct IE = 0 A 10 =
2.8 TA = 25 ° C 25 ° C
Ee =
2.4
1
2.0 SS
Nee =f
1.6
0.1
ASSES SS ss |
1.2
0.8 = 0.01 GIFS===
0.4 VO = 5 V
0 P| | | | tf | ft ft fl 0.001 a
0 10 20 30 40 50 0 1 2 3 4 5 6 7 8 9 10
VR, REVERSE VOLTAGE (V) Vin, INPUT VOLTAGE (V)
, DC CURRENT GAIN
FE
h
, COLLECTOR-EMITTER VOLTAGE (V)
CE(sat)
V
, OUTPUT CAPACITANCE (pF)Cob , COLLECTOR CURRENT (mA)IC
**----- End of picture text -----**
**Figure 4. Output Capacitance** **Figure 5. Output Current vs. Input Voltage** **==> picture [235 x 170] intentionally omitted <==** **----- Start of picture text -----**
10 es
25 ° C −25 ° C
——
T A = 75 ° C
ss |
1 | |
eyA
a
ss
V O = 0.2 V
———}+——- J
0.1 Ff TE
0 10 20 30 40 50
IC, COLLECTOR CURRENT (mA)
, INPUT VOLTAGE (V)
in
V
**----- End of picture text -----**
**Figure 6. Input Voltage vs. Output Current** **www.onsemi.com** **Share Feedback** Your Opinion Matters **5** **MUN2211, MMUN2211L, MUN5211, DTC114EE, DTC114EM3, NSBC114EF3** ## **TYPICAL CHARACTERISTICS - NSBC114EF3** **==> picture [491 x 382] intentionally omitted <==** **----- Start of picture text -----**
1 1000
[_>——} IC/IB = 10 fF —_} —__} —__} —} a VCE = 10 V 25 ° C
2oo——— oo M$peHt 150 HH ° C aaEa
25 ° C 150 ° C 100 ee −55 ° C max :
0.1 = — _+—_ PAppge | Ey
—————— 10 eea
−55 ° C
At tee
ee a ee ee pM me eee
0.01 1
a ee
0 10 20 30 40 50 0.1 1 10 100
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Figure 7. VCE(sat) vs. IC Figure 8. DC Current Gain
2.4 100
VP | | | | hm] ht f = 10 kHz SS 150 ° C esa SS
2.0 IE = 0 A =. lA -
TA = 25 ° C 10 −55 ° C
1.6
25 ° C
1.2 P AN 1 ma———————— inws ee
0.8 SESS =
a ———
0.1 yayft tT rT
0.4 | | | | | | | | | ff -—} 4 — —— — — VO = 5 V ——
0 OO 0.01 PT rr
0 10 20 30 40 50 0 1 2 3 4 5 6 7
VR, REVERSE VOLTAGE (V) Vin, INPUT VOLTAGE (V)
VOLTAGE (V)
, COLLECTOR-EMITTER , DC CURRENT GAIN
FE
h
CE(sat)
V
, OUTPUT CAPACITANCE (pF) , COLLECTOR CURRENT (mA)
Cob IC
**----- End of picture text -----**
**Figure 9. Output Capacitance** **Figure 10. Output Current vs. Input Voltage** **==> picture [241 x 172] intentionally omitted <==** **----- Start of picture text -----**
100
a ee ee eT |
[>
GO
a es ee ee
10
25 ° C SS −55 ° C
PT ee | ft ft
1 150 ° C
aA
[_—— —
es
V O = 0.2 V
0.1 a
0 10 20 30 40 50
IC, COLLECTOR CURRENT (mA)
, INPUT VOLTAGE (V)
in
V
**----- End of picture text -----**
**Figure 11. Input Voltage vs. Output Current** **www.onsemi.com** **Share Feedback** Your Opinion Matters **6** **MUN2211, MMUN2211L, MUN5211, DTC114EE, DTC114EM3, NSBC114EF3** ## **REVISION HISTORY** |**Revision**|**Description of Changes**|**Date**| |---|---|---| |10|Ordering Information table updated: NSVDTC114EM3T5G added to the existing row
containing DTC114EM3T5G.|10/3/2025| This document has undergone updates prior to the inclusion of this revision history table. The changes tracked here only reflect updates made on the noted approval dates. **www.onsemi.com** **Share Feedback** Your Opinion Matters **7** MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** **==> picture [326 x 39] intentionally omitted <==** **----- Start of picture text -----**
SOT−23 (TO−236) 2.90x1.30x1.00 1.90P
CASE 318
ISSUE AU
DATE 14 AUG 2024
**----- End of picture text -----**
**SCALE 4:1** **==> picture [102 x 112] intentionally omitted <==** **----- Start of picture text -----**
GENERIC
MARKING DIAGRAM*
XXXM �
�
1
XXX = Specific Device Code
M = Date Code
� = Pb−Free Package
**----- End of picture text -----**
*This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ � ”, may or may not be present. Some products may not follow the Generic Marking. ## **STYLES ON PAGE 2** Electronic versions are uncontrolled except when accessed directly from the Document Repository. **DOCUMENT NUMBER: 98ASB42226B** Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. **DESCRIPTION: SOT−23 (TO−236) 2.90x1.30x1.00 1.90P PAGE 1 OF 2** **onsemi** and are trademarks of Semiconductor Components Industries, LLC dba **onsemi** or its subsidiaries in the United States and/or other countries. **onsemi** reserves the right to make changes without further notice to any products herein. **onsemi** makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. **onsemi** does not convey any license under its patent rights nor the rights of others. www.onsemi.com © Semiconductor Components Industries, LLC, 2019 DATE 14 AUG 2024 ## **SOT−23 (TO−236) 2.90x1.30x1.00 1.90P** CASE 318 ISSUE AU **==> picture [489 x 178] intentionally omitted <==** **----- Start of picture text -----**
STYLE 1 THRU 5: STYLE 6: STYLE 7: STYLE 8:
CANCELLED PIN 1. BASE PIN 1. EMITTER PIN 1. ANODE
2. EMITTER 2. BASE 2. NO CONNECTION
3. COLLECTOR 3. COLLECTOR 3. CATHODE
STYLE 9: STYLE 10: STYLE 11: STYLE 12: STYLE 13: STYLE 14:
PIN 1. ANODE PIN 1. DRAIN PIN 1. ANODE PIN 1. CATHODE PIN 1. SOURCE PIN 1. CATHODE
2. ANODE 2. SOURCE 2. CATHODE 2. CATHODE 2. DRAIN 2. GATE
3. CATHODE 3. GATE 3. CATHODE−ANODE 3. ANODE 3. GATE 3. ANODE
STYLE 15: STYLE 16: STYLE 17: STYLE 18: STYLE 19: STYLE 20:
PIN 1. GATE PIN 1. ANODE PIN 1. NO CONNECTION PIN 1. NO CONNECTION PIN 1. CATHODE PIN 1. CATHODE
2. CATHODE 2. CATHODE 2. ANODE 2. CATHODE 2. ANODE 2. ANODE
3. ANODE 3. CATHODE 3. CATHODE 3. ANODE 3. CATHODE−ANODE 3. GATE
STYLE 21: STYLE 22: STYLE 23: STYLE 24: STYLE 25: STYLE 26:
PIN 1. GATE PIN 1. RETURN PIN 1. ANODE PIN 1. GATE PIN 1. ANODE PIN 1. CATHODE
2. SOURCE 2. OUTPUT 2. ANODE 2. DRAIN 2. CATHODE 2. ANODE
3. DRAIN 3. INPUT 3. CATHODE 3. SOURCE 3. GATE 3. NO CONNECTION
STYLE 27: STYLE 28:
PIN 1. CATHODE PIN 1. ANODE
2. CATHODE 2. ANODE
3. CATHODE 3. ANODE
**----- End of picture text -----**
**==> picture [493 x 37] intentionally omitted <==** **----- Start of picture text -----**
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
DOCUMENT NUMBER: 98ASB42226B Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DESCRIPTION: SOT−23 (TO−236) 2.90x1.30x1.00 1.90P PAGE 2 OF 2
**----- End of picture text -----**
**onsemi** and are trademarks of Semiconductor Components Industries, LLC dba **onsemi** or its subsidiaries in the United States and/or other countries. **onsemi** reserves the right to make changes without further notice to any products herein. **onsemi** makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. **onsemi** does not convey any license under its patent rights nor the rights of others. www.onsemi.com © Semiconductor Components Industries, LLC, 2019 MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** ## **SC−59−3 2.90x1.50x1.15, 1.90P** CASE 318D ISSUE J ## DATE 15 FEB 2024 ## **GENERIC MARKING DIAGRAM*** **==> picture [39 x 33] intentionally omitted <==** **----- Start of picture text -----**
XXX M
1
**----- End of picture text -----**
XXX = Specific Device Code M = Date Code = Pb−Free Package* (*Note: Microdot may be in either location) - *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ ”, may or may not be present. Some products may not follow the Generic Marking. **==> picture [200 x 72] intentionally omitted <==** **----- Start of picture text -----**
STYLE 1: STYLE 2: STYLE 3:
PIN 1. BASE PIN 1. ANODE PIN 1. ANODE
2. EMITTER 2. N.C. 2. ANODE
3. COLLECTOR 3. CATHODE 3. CATHODE
STYLE 4: STYLE 5: STYLE 6:
PIN 1. CATHODE PIN 1. CATHODE PIN 1. ANODE
2. N.C. 2. CATHODE 2. CATHODE
3. ANODE 3. ANODE 3. ANODE/CATHODE
**----- End of picture text -----**
Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. ## **DOCUMENT NUMBER: 98ASB42664B** ## **DESCRIPTION: SC−59−3 2.90x1.50x1.15, 1.90P** **PAGE 1 OF 1** **onsemi** and are trademarks of Semiconductor Components Industries, LLC dba **onsemi** or its subsidiaries in the United States and/or other countries. **onsemi** reserves the right to make changes without further notice to any products herein. **onsemi** makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. **onsemi** does not convey any license under its patent rights nor the rights of others. www.onsemi.com © Semiconductor Components Industries, LLC, 2000 MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** **==> picture [482 x 52] intentionally omitted <==** **----- Start of picture text -----**
SC−70 (SOT−323)
CASE 419
ISSUE R
DATE 11 OCT 2022
SCALE 4:1
**----- End of picture text -----**
## **GENERIC MARKING DIAGRAM** **==> picture [116 x 78] intentionally omitted <==** **----- Start of picture text -----**
XX M �
�
1
XX = Specific Device Code
M = Date Code
� = Pb−Free Package
**----- End of picture text -----**
*This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ � ”, may or may not be present. Some products may not follow the Generic Marking. **==> picture [492 x 120] intentionally omitted <==** **----- Start of picture text -----**
STYLE 1: STYLE 2: STYLE 3: STYLE 4: STYLE 5:
CANCELLED PIN 1. ANODE PIN 1. BASE PIN 1. CATHODE PIN 1. ANODE
2. N.C. 2. EMITTER 2. CATHODE 2. ANODE
3. CATHODE 3. COLLECTOR 3. ANODE 3. CATHODE
STYLE 6: STYLE 7: STYLE 8: STYLE 9: STYLE 10: STYLE 11:
PIN 1. EMITTER PIN 1. BASE PIN 1. GATE PIN 1. ANODE PIN 1. CATHODE PIN 1. CATHODE
2. BASE 2. EMITTER 2. SOURCE 2. CATHODE 2. ANODE 2. CATHODE
3. COLLECTOR 3. COLLECTOR 3. DRAIN 3. CATHODE-ANODE 3. ANODE-CATHODE 3. CATHODE
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
DOCUMENT NUMBER: 98ASB42819B Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DESCRIPTION: SC−70 (SOT−323) PAGE 1 OF 1
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**onsemi** and are trademarks of Semiconductor Components Industries, LLC dba **onsemi** or its subsidiaries in the United States and/or other countries. **onsemi** reserves the right to make changes without further notice to any products herein. **onsemi** makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. **onsemi** does not convey any license under its patent rights nor the rights of others. www.onsemi.com © Semiconductor Components Industries, LLC, 2019 MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** ## **SC75−3 1.60x0.80x0.80, 1.00P** CASE 463 ISSUE H **==> picture [79 x 7] intentionally omitted <==** **----- Start of picture text -----**
DATE 01 FEB 2024
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**==> picture [116 x 111] intentionally omitted <==** **----- Start of picture text -----**
GENERIC
MARKING DIAGRAM*
XXM
1
XX = Specific Device Code
M = Date Code
= Pb−Free Package
**----- End of picture text -----**
*This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ ”, may or may not be present. Some products may not follow the Generic Marking. STYLE 1: STYLE 2: STYLE 3: PIN 1. BASE PIN 1. ANODE PIN 1. ANODE 2. EMITTER 2. N/C 2. ANODE 3. COLLECTOR 3. CATHODE 3. CATHODE STYLE 4: STYLE 5: PIN 1. CATHODE PIN 1. GATE 2. CATHODE 2. SOURCE 3. ANODE 3. DRAIN Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. **DOCUMENT NUMBER: 98ASB15184C** **DESCRIPTION: SC75−3 1.60x0.80x0.80, 1.00P** **PAGE 1 OF 1** **onsemi** and are trademarks of Semiconductor Components Industries, LLC dba **onsemi** or its subsidiaries in the United States and/or other countries. **onsemi** reserves the right to make changes without further notice to any products herein. **onsemi** makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. **onsemi** does not convey any license under its patent rights nor the rights of others. www.onsemi.com  Semiconductor Components Industries, LLC, 1996 MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** ## **SOT−1123 0.80x0.60x0.37, 0.35P** CASE 524AA ISSUE D ## DATE 18 JAN 2024 ## **GENERIC MARKING DIAGRAM*** **==> picture [28 x 27] intentionally omitted <==** **----- Start of picture text -----**
XM
|
**----- End of picture text -----**
- X = Specific Device Code M = Date Code - *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ . ”, may or may not be present. Some products may not follow the Generic Marking. STYLE 1: STYLE 2: STYLE 3: STYLE 4: STYLE 5: PIN 1. BASE PIN 1. ANODE PIN 1. ANODE PIN 1. CATHODE PIN 1. GATE 2. EMITTER 2. N/C 2. ANODE 2. CATHODE 2. SOURCE 3. COLLECTOR 3. CATHODE 3. CATHODE 3. ANODE 3. DRAIN Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. ## **DOCUMENT NUMBER: 98AON23134D DESCRIPTION: SOT−1123 0.80x0.60x0.37, 0.35P** **PAGE 1 OF 1** **onsemi** and are trademarks of Semiconductor Components Industries, LLC dba **onsemi** or its subsidiaries in the United States and/or other countries. **onsemi** reserves the right to make changes without further notice to any products herein. **onsemi** makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. **onsemi** does not convey any license under its patent rights nor the rights of others. www.onsemi.com © Semiconductor Components Industries, LLC, 2006 MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** ## **SOT−723 1.20x0.80x0.50, 0.40P** CASE 631AA ISSUE E ## DATE 24 JAN 2024 ## **GENERIC MARKING DIAGRAM*** **==> picture [33 x 26] intentionally omitted <==** **----- Start of picture text -----**
XX M
1
**----- End of picture text -----**
- XX = Specific Device Code M = Date Code - *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ ”, may or may not be present. Some products may not follow the Generic Marking. STYLE 1: STYLE 2: STYLE 3: STYLE 4: STYLE 5: PIN 1. BASE PIN 1. ANODE PIN 1. ANODE PIN 1. CATHODE PIN 1. GATE 2. EMITTER 2. N/C 2. ANODE 2. CATHODE 2. SOURCE 3. COLLECTOR 3. CATHODE 3. CATHODE 3. ANODE 3. DRAIN Electronic versions are uncontrolled except when accessed directly from the Document Repository. **DOCUMENT NUMBER: 98AON12989D** Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. **DESCRIPTION: SOT−723 1.20x0.80x0.50, 0.40P PAGE 1 OF 1** **onsemi** and are trademarks of Semiconductor Components Industries, LLC dba **onsemi** or its subsidiaries in the United States and/or other countries. **onsemi** reserves the right to make changes without further notice to any products herein. **onsemi** makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. **onsemi** does not convey any license under its patent rights nor the rights of others. www.onsemi.com  Semiconductor Components Industries, LLC, 2023 **onsemi** , , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “ **onsemi** ” or its affiliates and/or subsidiaries in the United States and/or other countries. **onsemi** owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of **onsemi** ’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. **onsemi** reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and **onsemi** makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using **onsemi** products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by **onsemi** . “Typical” parameters which may be provided in **onsemi** data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. **onsemi** does not convey any license under any of its intellectual property rights nor the rights of others. **onsemi** products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. 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