# Schottky Rectifier, 100 V, 4 A, Single, DO-214AC (SMA), 2 Pins, 660 mV ![Product image](https://novapart.co/image/farnell:2844743/) **URL**: https://novapart.co/products/NRVTSA4100T3G/schottky-rectifier-100-v-4-a-single-do-214ac-sma-2 **SKU**: NRVTSA4100T3G **Manufacturer**: ONSEMI **Category**: Semiconductors - Discretes || Diodes & Rectifiers || Schottky Diodes || Schottky Rectifier Diodes **Price**: €0.1510 **Stock**: 10+ ## Description Repetitive Reverse Voltage Vrrm Max:100V; Forward Current If(AV):4A; Diode Configuration:Single; Diode Case Style:DO-214AC; No. of Pins:2Pins; Forward Voltage VF Max:660mV; Forwar ## Specifications | Parameter | Value | |---|---| | Svhc | No SVHC (15-Jan-2018) | | No. Of Pins | 2Pins | | Product Range | - | | Qualification | AEC-Q101 | | Diode Mounting | Surface Mount | | Diode Case Style | DO-214AC (SMA) | | Diode Configuration | Single | | Forward Voltage Max | 660mV | | Forward Surge Current | 50A | | Average Forward Current | 4A | | Operating Temperature Max | 150°C | | Repetitive Peak Reverse Voltage | 100V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:2844743/) NTSA4100, NRVTSA4100 ## Low Forward Voltage, Low Leakage Trench-based Schottky Rectifier ## **Features** ## **www.onsemi.com** - Fine Lithography Trench−based Schottky Technology for Very Low Forward Voltage and Low Leakage **SCHOTTKY BARRIER RECTIFIERS 4 AMPERES 100 VOLTS** - Fast Switching with Exceptional Temperature Stability - Low Power Loss and Lower Operating Temperature - Higher Efficiency for Achieving Regulatory Compliance - High Surge Capability - NRVTSA Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 **MARKING** Qualified and PPAP Capable **DIAGRAMS** Unique Site and Control Change Requirements; AEC−Q101 **MARKING** Qualified and PPAP Capable **DIAGRAMS** • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS **SMA** Compliant **CASE 403D** TH41 **STYLE 1** AYWW **Typical Applications** • Switching Power Supplies including Wireless, Smartphone and Notebook Adapters TH41 = Specific Device Code • High Frequency and DC−DC Converters A = Assembly Location Y = Year • Freewheeling and OR−ing diodes WW = Work Week • Reverse Battery Protection = Pb−Free Package • Instrumentation (Note: Microdot may be in either location) • LED Lighting **Mechanical Characteristics: ORDERING INFORMATION** • Case: Epoxy, Molded • Epoxy Meets Flammability Rating UL 94−0 @ 0.125 in. **Device Package Shipping** † • Lead Finish: 100% Matte Sn (Tin) NTSA4100T3G SMA 5000 / (Pb−Free) Tape & Reel • Lead and Mounting SurfaceTemperature for Soldering Purposes: 260°C Max. for 10 Seconds NRVTSA4100T3G SMA 5000 / (Pb−Free) Tape & Reel • ~~_~~ Device Meets MSL 1 Requirements †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Publication Order Number: **NTSA4100/D** **1** © Semiconductor Components Industries, LLC, 2015 **October, 2015 − Rev. 2** **NTSA4100, NRVTSA4100** ## **MAXIMUM RATINGS** |**MAXIMUM RATINGS**|||| |---|---|---|---| |**Rating**|**Symbol**|**Value**|**Unit**| |Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage|VRRM
VRWM
VR|100|V| |Average Rectified Forward Current
(TL= 118°C)|IF(AV)|4.0|A| |Peak Repetitive Forward Current,
(Square Wave, 20 kHz, TL= 110°C)|IFRM|8.0|A| |Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)|IFSM|50|A| |Storage Temperature Range|Tstg|−65 to +150|°C| |Operating Junction Temperature|TJ|−55 to +150|°C| |ESD Rating (Human Body Model)||1B|| |ESD Rating (Machine Model)||M3|| Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ## **THERMAL CHARACTERISTICS** |**THERMAL CHARACTERISTICS**||||| |---|---|---|---|---| |**Characteristic**|**Symbol**|**Typ**|**Max**|**Unit**| |Thermal Resistance, Junction−to−Lead, Steady State
(Assumes 600 mm21 oz. copper bond pad, on a FR4 board)|RθJL|−|16.2|°C/W| |Thermal Resistance, Junction−to−Ambient, Steady State
(Assumes 600 mm21 oz. copper bond pad, on a FR4 board)|RθJA|−|90|°C/W| |**ELECTRICAL CHARACTERISTICS**||||| |Instantaneous Forward Voltage (Note 1)
(iF= 1.0 A, TJ= 25°C)
(iF= 4.0 A, TJ= 25°C)
(iF= 1.0 A, TJ= 125°C)
(iF= 4.0 A, TJ= 125°C)|vF|0.43
0.59
0.35
0.53|−
0.66
−
0.58|V| |Reverse Current (Note 1)
(Rated dc Voltage, TJ= 25°C)
(Rated dc Voltage, TJ= 125°C)|iR|1.3
0.13|25
9|�A
mA| |Diode Capacitance
(Rated dc Voltage, TJ= 25°C, f = 1 MHz)|Cd|54.7||pF| Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width = 300 � s, Duty Cycle ≤ 2.0%. **www.onsemi.com** **2** **NTSA4100, NRVTSA4100** ## **TYPICAL CHARACTERISTICS** **==> picture [491 x 591] intentionally omitted <==** **----- Start of picture text -----**
100 100
TA = 150 ° C
TA = 150 ° C
10 TA = 125 ° C 10 TA = 125 ° C
T A = 85 ° C T A = 85 ° C
1 1
TA = 25 ° C TA = 25 ° C
0.1 TA = −55 ° C 0.1 TA = −55 ° C
0 0.2 0.4 0.6 0.8 1.0 0 0.2 0.4 0.6 0.8 1.0 1.2
VF, INSTANTANEOUS FORWARD VOLTAGE (V) VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 1. Typical Instantaneous Forward Figure 2. Maximum Instantaneous Forward
Characteristics Characteristics
1.E−01 1.E−01
1.E−02 TA = 150 ° C 1.E−02 T A = 150 ° C
1.E−03 TA = 125 ° C 1.E−03 T A = 125 ° C
1.E−04 TA = 85 ° C
TA = 85 ° C
1.E−04
1.E−05
1.E−06 TA = 25 ° C 1.E−05 TA = 25 ° C
1.E−07 1.E−06
10 20 30 40 50 60 70 80 90 100 10 20 30 40 50 60 70 80 90 100
VR, INSTANTANEOUS REVERSE VOLTAGE (V) VR, INSTANTANEOUS REVERSE VOLTAGE (V)
Figure 3. Typical Reverse Characteristics Figure 4. Maximum Reverse Characteristics
1000 8
TJ = 25 ° C
7
DC
6
5 Square Wave
100 4
3
2
1 R � JL = 16.2 ° C/W
10 0
0.1 1 10 100 0 20 40 60 80 100 120 140
VR, REVERSE VOLTAGE (V) TC, LEAD TEMPERATURE ( ° C)
CURRENT (A) CURRENT (A)
, INSTANTANEOUS FORWARD , INSTANTANEOUS FORWARD
iF iF
, INSTANTANEOUS REVERSE CURRENT (A) , INSTANTANEOUS REVERSE CURRENT (A)
IR IR
C, JUNCTION CAPACITANCE (pF) , AVERAGE FORWARD CURRENT (A)
IF(AV)
**----- End of picture text -----**
**Figure 5. Typical Junction Capacitance** **Figure 6. Current Derating** **www.onsemi.com** **3** **NTSA4100, NRVTSA4100** ## **TYPICAL CHARACTERISTICS** **==> picture [240 x 175] intentionally omitted <==** **----- Start of picture text -----**
8
IPK/IAV IPK/IAV = 10
7 = 20
6 I PK /I AV = 5
5
4 Square Wave
3
DC
2
1
0
0 1 2 3 4 5
IF(AV), AVERAGE FORWARD CURRENT (A)
, AVERAGE FORWARD
F(AV) POWER DISSIPATION (W)
P
**----- End of picture text -----**
**Figure 7. Forward Power Dissipation** **==> picture [491 x 176] intentionally omitted <==** **----- Start of picture text -----**
1000
100 50% Duty Cycle
20%
10%
10 5%
2%
1 1%
0.1
Single Pulse
0.01
0.001
0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
t, PULSE TIME (S)
C/W)
°
RESISTANCE (
, TYPICAL TRANSIENT THERMAL
(t)
R
**----- End of picture text -----**
**Figure 8. Typical Transient Thermal Response, Junction−to−Ambient** **www.onsemi.com** **4** **NTSA4100, NRVTSA4100** ## **PACKAGE DIMENSIONS** **SMA** CASE 403D−02 ISSUE G **HE** NOTES: 1. **E** 1982. 2. 3. ~~=~~ **DIM MIN NOM b D A** 1.97 2.10 **A1** 0.05 0.10 **b** 1.27 1.45 **c** 0.15 0.28 **D** 2.29 2.60 ~~j~~ a **POLARITY INDICATOR** ~~:~~ **OPTIONAL AS NEEDED** ~~bay~~ **E** 4.06 4.32 **(SEE STYLES) H E** 4.83 5.21 **L** 0.76 1.14 **A A1** ~~=,~~ **L c** ~~=n~~ **SOLDERING FOOTPRINT*** 4.000 0.157 2.000 0.079 ~~ot oe~~ 2.000 ~~a~~ 0.079 SCALE 8:1 mm ~~(—)~~ inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. - NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. **==> picture [195 x 83] intentionally omitted <==** **----- Start of picture text -----**
3. DIMENSION b SHALL BE MEASURED WITHIN DIMENSION L.
MILLIMETERS INCHES
DIM MIN NOM MAX MIN NOM MAX
A 1.97 2.10 2.20 0.078 0.083 0.087
A1 0.05 0.10 0.20 0.002 0.004 0.008
b 1.27 1.45 1.63 0.050 0.057 0.064
c 0.15 0.28 0.41 0.006 0.011 0.016
D 2.29 2.60 2.92 0.090 0.103 0.115
S=SSSa E 4.06 4.32 4.57 0.160 0.170 = 0.180
H E 4.83 5.21 5.59 0.190 0.205 0.220
L 0.76 1.14 1.52 0.030 0.045 0.060
**----- End of picture text -----**
**==> picture [127 x 131] intentionally omitted <==** **----- Start of picture text -----**
4.000
0.157
2.000
0.079
ot
oe
2.000
a
0.079
SCALE 8:1 mm
(—) inches
**----- End of picture text -----**
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