# Schottky Rectifier, 60 V, 3 A, Single, DO-214AB (SMC), 2 Pins, 630 mV

![Product image](https://novapart.co/image/farnell:2728010RL/)

**URL**: https://novapart.co/products/NRVBS360T3G/schottky-rectifier-60-v-3-a-single-do-214ab-smc-2
**SKU**: NRVBS360T3G
**Manufacturer**: ONSEMI
**Category**: Semiconductors - Discretes || Diodes & Rectifiers || Schottky Diodes || Schottky Rectifier Diodes
**Price**: €0.3230
**Stock**: 200+
**Lead Time**: 57 days (indicative)

## Description

Repetitive Reverse Voltage Vrrm Max:60V; Forward Current If(AV):3A; Diode Configuration:Single; Diode Case Style:DO-214AB; No. of Pins:2Pins; Forward Voltage VF Max:630mV; Forward S

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 2Pins |
| Product Range | - |
| Qualification | AEC-Q101 |
| Diode Mounting | Surface Mount |
| Diode Case Style | DO-214AB (SMC) |
| Diode Configuration | Single |
| Forward Voltage Max | 630mV |
| Forward Surge Current | 125A |
| Average Forward Current | 3A |
| Operating Temperature Max | 175°C |
| Repetitive Peak Reverse Voltage | 60V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2728010RL/)

## Surface Mount Schottky Power Rectifier 

## MBRS360T3G, MBRS360BT3G, NRVBS360T3G, NRVBS360BT3G, NRVBS360BNT3 

This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes, in surface mount applications where compact size and weight are critical to the system. 

## **Features** 

- Small Compact Surface Mountable Package with J−Bend Leads 

- Rectangular Package for Automated Handling 

- Highly Stable Oxide Passivated Junction 

- Excellent Ability to Withstand Reverse Avalanche Energy Transients 

- Guard−Ring for Stress Protection 

- NRVBS Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable* 

- These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 

## **Mechanical Characteristics** 

- Case: Epoxy, Molded, Epoxy Meets UL 94 V−0 

- Weight: 217 mg (Approximately), SMC 95 mg (Approximately), SMB 

- Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable 

- Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds 

- Polarity: Polarity Band on Plastic Body Indicates Cathode Lead 

- Device Meets MSL 1 Requirements 

- ESD Ratings: 

   - ♦ Machine Model, C 

   - ♦ Human Body Model, 3B 

**www.onsemi.com** 

**SCHOTTKY BARRIER RECTIFIERS 3.0 AMPERES, 60 VOLTS** 

**==> picture [146 x 157] intentionally omitted <==**

**----- Start of picture text -----**<br>
SMC  2−LEAD SMB<br>CASE 403AC CASE 403A−03<br>MARKING DIAGRAMS<br>AYWW AYWW<br>B36 B36<br>B36 = Specific Device Code<br>A = Assembly Location**<br>Y = Year<br>WW = Work Week<br>= Pb−Free Package<br>(Note: Microdot may be in either location)<br>**----- End of picture text -----**<br>


**The Assembly Location code (A) is front side optional. In cases where the Assembly Location is stamped in the package, the front side assembly code may be blank. 

## **ORDERING INFORMATION** 

|**Device**|**Package**|**Shipping**†|
|---|---|---|
|MBRS360T3G|SMC<br>(Pb−Free)|2,500 /<br>Tape & Reel|
|MBRS360BT3G|SMB<br>(Pb−Free)|2,500 /<br>Tape & Reel|
|NRVBS360T3G*|SMC<br>(Pb−Free)|2,500 /<br>Tape & Reel|
|NRVBS360BT3G*|SMB<br>(Pb−Free)|2,500 /<br>Tape & Reel|
|NRVBS360BT3G<br>−VF01*|SMB<br>(Pb−Free)|2,500 /<br>Tape & Reel|
|SBRS360BT3G|SMB<br>(Pb−Free)|2,500 /<br>Tape & Reel|
|NRVBS360BNT3G*|SMB<br>(Pb−Free)|2,500 /<br>Tape & Reel|



- †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. 

Publication Order Number: **MBRS360T3/D** 

**1** 

© Semiconductor Components Industries, LLC, 2014 **December, 2019 − Rev. 13** 

**MBRS360T3G, MBRS360BT3G, NRVBS360T3G, NRVBS360BT3G, NRVBS360BNT3** 

## **MAXIMUM RATINGS** 

|**MAXIMUM RATINGS**||||
|---|---|---|---|
|**Rating**|**Symbol**|**Value**|**Unit**|
|Peak Repetitive Reverse Voltage<br>Working Peak Reverse Voltage<br>DC Blocking Voltage|VRRM<br>VRWM<br>VR|60|V|
|Average Rectified Forward Current|IF(AV)|3.0 @ TL= 137°C<br>4.0 @ TL= 127°C|A|
|Nonrepetitive Peak Surge Current<br>(Surge applied at rated load conditions halfwave, single phase, 60 Hz)|IFSM|125|A|
|Storage Temperature Range|Tstg|−65 to +175|°C|
|Operating Junction Temperature (Note 1)|TJ|−65 to +175|°C|



Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 

1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/R � JA. 

## **THERMAL CHARACTERISTICS** 

|**THERMAL CHARACTERISTICS**||||
|---|---|---|---|
|**Characteristic**|**Symbol**|**Value**|**Unit**|
|Thermal Resistance, Junction−to−Lead (Note 2)<br>SMC Package<br>SMB Package|R�JL|11<br>15|°C/W|
|Thermal Resistance, Junction−to−Ambient (Note 2)<br>SMC Package<br>SMB Package|R�JA|136<br>145|°C/W|
|Thermal Resistance, Junction−to−Ambient (Note 3)<br>SMC Package<br>SMB Package (Note 4)|R�JA|71<br>73|°C/W|
|**ELECTRICAL CHARACTERISTICS**||||
|Maximum Instantaneous Forward Voltage (Note 5)<br>(iF= 3.0 A, TJ= 25°C)|VF|0.63|V|
|Maximum Instantaneous Reverse Current (Note 5)<br>(Rated dc Voltage, TJ= 25°C)<br>(Rated dc Voltage, TJ= 100°C)|iR|0.03<br>3.0|mA|



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 

2. Mounted with minimum recommended pad size, PC Board FR4. 

3. 1 inch square pad size (1 x 0.5 inch for each lead) on FR4 board. 

4. Typical Value; 1 inch square pad size (1 x 0.5 inch for each lead) on FR4 board. 

5. Pulse Test: Pulse Width = 300 � s, Duty Cycle ≤ 2.0%. 

**www.onsemi.com** 

**2** 

**MBRS360T3G, MBRS360BT3G, NRVBS360T3G, NRVBS360BT3G, NRVBS360BNT3** 

## **TYPICAL ELECTRICAL CHARACTERISTICS** 

**==> picture [484 x 579] intentionally omitted <==**

**----- Start of picture text -----**<br>
10 10<br>TJ = 150 ° C<br>TJ = 175 ° C<br>TJ = 175 ° C<br>1 1<br>TJ = 100 ° C TJ = 150 ° C<br>TJ = 25 ° C TJ = 25 ° C<br>0.1 0.1 TJ = 100 ° C<br>TJ = −40 ° C TJ = −40 ° C<br>0.01 0.01<br>0.0 0.2 0.4 0.6 0.8 0.0 0.2 0.4 0.6 0.8<br>VF, INSTANTANEOUS FORWARD VOLTAGE (V) VF, INSTANTANEOUS FORWARD VOLTAGE (V)<br>Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage<br>1.0E+00<br>1.0E−01 TJ = 175 ° C<br>1.0E−02<br>TJ = 150 ° C<br>1.0E−03 TJ = 100 ° C<br>1.0E−04<br>1.0E−05<br>TJ = 25 ° C<br>1.0E−06<br>1.0E−07<br>0 10 20 30 40 50 60<br>VR, INSTANTANEOUS REVERSE VOLTAGE (V)<br>Figure 3. Typical Reverse Current<br>1.0E+00<br>1.0E−01 TJ = 175 ° C<br>1.0E−02 TJ = 150 ° C<br>TJ = 100 ° C<br>1.0E−03<br>1.0E−04<br>TJ = 25 ° C<br>1.0E−05<br>1.0E−06<br>0 10 20 30 40 50 60<br>VR, INSTANTANEOUS REVERSE VOLTAGE (V)<br>CURRENT (A) CURRENT (A)<br>, INSTANTANEOUS FORWARD , INSTANTANEOUS FORWARD<br>IF IF<br>CURRENT (A)<br>, INSTANTANEOUS REVERSE<br>IR<br>CURRENT (A)<br>, INSTANTANEOUS REVERSE<br>IR<br>**----- End of picture text -----**<br>


**Figure 4. Maximum Reverse Current** 

**www.onsemi.com** 

**3** 

**MBRS360T3G, MBRS360BT3G, NRVBS360T3G, NRVBS360BT3G, NRVBS360BNT3** 

**==> picture [486 x 172] intentionally omitted <==**

**----- Start of picture text -----**<br>
5 4<br>TJ = 175 ° C SQUARE<br>dc 3.5<br>WAVE<br>4<br>3<br>SQUARE WAVE<br>dc<br>3 2.5<br>2<br>2<br>1.5<br>1<br>1<br>0.5<br>R � JL = 15 ° C/W<br>0 0<br>0 20 40 60 80 100 120 140 160 180 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5<br>TL, LEAD TEMPERATURE ( ° C) IO, AVERAGE FORWARD CURRENT (A)<br>, AVERAGE FORWARD CURRENT (A) , AVERAGE POWER DISSIPATION (W)<br>FO<br>IF(AV) P<br>**----- End of picture text -----**<br>


**Figure 5. Current Derating** 

**Figure 6. Forward Power Dissipation** 

**==> picture [240 x 170] intentionally omitted <==**

**----- Start of picture text -----**<br>
1000<br>TJ = 25 ° C<br>100<br>10<br>0 10 20 30 40 50 60 70<br>VR, REVERSE VOLTAGE (V)<br>C, CAPACITANCE (pF)<br>**----- End of picture text -----**<br>


**Figure 7. Typical Capacitance** 

**www.onsemi.com** 

**4** 

**MBRS360T3G, MBRS360BT3G, NRVBS360T3G, NRVBS360BT3G, NRVBS360BNT3** 

**==> picture [489 x 389] intentionally omitted <==**

**----- Start of picture text -----**<br>
100<br>D = 0.5<br>0.2<br>10<br>0.1<br>0.05 P(pk)<br>1<br>Test Type > min pad 1 oz<br>0.01 t1 R�JC = min pad 1 oz C/W<br>t2<br>SINGLE PULSE DUTY CYCLE, D = t1/t2<br>0.1<br>0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000<br>t, TIME (s)<br>Figure 8. Thermal Response, Junction−to−Ambient, SMC Package<br>100<br>50% Duty Cycle<br>20%<br>10 10%<br>5%<br>2%<br>1 P(pk)<br>1%<br>Test Type > min pad 1 oz<br>0.1 t1 R�JC = min pad 1 oz C/W<br>t2<br>Single Pulse DUTY CYCLE, D = t1/t2<br>0.01<br>0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000<br>PULSE TIME (s)<br>r(t), TRANSIENT THERMAL RESPONSE<br>C/W)<br>°<br>R(t) (<br>**----- End of picture text -----**<br>


**Figure 9. Typical Thermal Response, Junction−to−Ambient, SMB Package** 

**www.onsemi.com** 

**5** 

MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** 

**SMB** CASE 403A−03 ISSUE J 

DATE 19 JUL 2012 

**==> picture [479 x 403] intentionally omitted <==**

**----- Start of picture text -----**<br>
SCALE 1:1 SCALE 1:1<br>Polarity Band Non−Polarity Band<br>HE<br>NOTES:<br>1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.<br>E 2. CONTROLLING DIMENSION: INCH.<br>3. DIMENSION b SHALL BE MEASURED WITHIN DIMENSION L1.<br>MILLIMETERS INCHES<br>DIM MIN NOM MAX MIN NOM MAX<br>A 1.95 2.30 2.47 0.077 0.091 0.097<br>= b D SS A1 0.05 0.10 0.20 0.002 0.004 0.008<br>b 1.96 2.03 2.20 0.077 0.080 0.087<br>c 0.15 0.23 0.31 0.006 0.009 0.012<br>D 3.30 3.56 3.95 0.130 0.140 0.156<br>E 4.06 4.32 4.60 0.160 0.170 0.181<br>as POLARITY INDICATOROPTIONAL AS NEEDED H E 5.21 5.44 5.60 0.205 0.214 0.220<br>L 0.76 1.02 1.60 0.030 0.040 0.063<br>L1 0.51 REF 0.020 REF<br>A GENERIC<br>MARKING DIAGRAM*<br>A1<br>L L1 c<br>AYWW AYWW<br>XXXXX XXXXX<br>ae Qo (Lal.<br>SOLDERING FOOTPRINT*<br>Polarity Band Non−Polarity Band<br>2.261<br>0.089 XXXXX = Specific Device Code<br>—— A = Assembly Location<br>Y = Year<br>WW = Work Week<br>= Pb−Free Package<br>2.743<br>(Note: Microdot may be in either location)<br>0.108<br>*This information is generic. Please refer to<br>device data sheet for actual part marking.<br>Lrt Pb−Free indicator, “G” or microdot “ ”, |<br>2.159 may or may not be present.<br>0.085 mm<br>SCALE 8:1<br>c— (—) inches<br>**----- End of picture text -----**<br>


*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 

**DOCUMENT NUMBER: 98ASB42669B DESCRIPTION: SMB** [[_ 

Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red. 

**PAGE 1 OF 1** 

ON Semiconductor and          are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. 

www.onsemi.com 

© Semiconductor Components Industries, LLC, 2019 

MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** 

**SMC 2−LEAD** CASE 403AC ISSUE B 

## **SCALE 1:1** 

DATE 27 JUL 2017 

**==> picture [264 x 308] intentionally omitted <==**

**----- Start of picture text -----**<br>
HE<br>E<br>=<br>_ D<br>HD<br>A1 _ c<br>— a DETAIL A<br>TOP VIEW<br>DETAIL A<br>|<br>A2 A<br>L no s Todt b<br>SIDE VIEW END VIEW<br>RECOMMENDED<br>SOLDERING FOOTPRINT*<br>8.750<br>0.344<br>oe<br>3.790<br>2X<br>7 0.149<br>2X 2.250 mm SCALE 4:1<br>ot 0.089 inches<br>**----- End of picture text -----**<br>


*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 

NOTES: 

1. DIMENSIONING AND TOLERANCING PER ANME Y14.5M, 1994. 

2. CONTROLLING DIMENSION: INCHES. 

3. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH. MOLD FLASH SHALL NOT EXCEED 0.254mm PER SIDE. 

4. DIMENSIONS D AND E TO BE DETERMINED AT DATUM H. 

**==> picture [141 x 123] intentionally omitted <==**

**----- Start of picture text -----**<br>
5. DIMENSION b SHALL BE MEASURED WITHIN THE AREA<br>DETERMINED BY DIMENSION L.<br>MILLIMETERS INCHES<br>DIM MIN MAX MIN MAX<br>A 1.95 2.61 0.077 0.103<br>A1 0.05 0.20 0.002 0.008<br>——— A2 1.90 2.41 0.075 0.095<br>b 2.90 3.20 0.114 0.126<br>c 0.15 0.41 0.006 0.016<br>D 5.55 6.25 0.219 0.246<br>EE. E 6.60 7.15 0.260 0.281<br>H E 7.75 8.15 0.305 0.321<br>L 0.75 1.60 0.030 0.063<br>GENERIC<br>MARKING DIAGRAM*<br>**----- End of picture text -----**<br>


**==> picture [159 x 143] intentionally omitted <==**

**----- Start of picture text -----**<br>
AYWW<br>XXXX<br>XXXX = Specific Device Code<br>A = Assembly Location<br>Y = Year<br>WW = Work Week<br>(Note: Microdot may be in either location) , = Pb−Free Package<br>*This information is generic. Please refer to<br>device data sheet for actual part marking.<br>Pb−Free indicator, “G” or microdot “ ”, |<br>may or may not be present.<br>**----- End of picture text -----**<br>


|**DOCUMENT NUMBER:**|**98AON97675F**|
|---|---|
|**DESCRIPTION:**|**SMC 2−LEAD**|



Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red. 

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ON Semiconductor and          are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. 

www.onsemi.com 

© Semiconductor Components Industries, LLC, 2019 

ON Semiconductor and      are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 

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