# Bipolar (BJT) Single Transistor, PNP, 250 V, 15 A, 200 W, TO-3P, Through Hole

![Product image](https://novapart.co/image/farnell:2535654/)

**URL**: https://novapart.co/products/NJW1302G/bipolar-bjt-single-transistor-pnp-250-v-15-a-200-w
**SKU**: NJW1302G
**Manufacturer**: ONSEMI
**Category**: Semiconductors - Discretes || Transistors || Bipolar Transistors || Single Bipolar Junction Transistors - BJT
**Price**: €2.2400
**Stock**: 500+
**Lead Time**: 2 days (indicative)

## Description

Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-250V; Transition Frequency ft:30MHz; Power Dissipation Pd:200W; DC Collector Current:-15A; DC Current Gain hFE:45hFE; Transistor

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | Lead (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | - |
| Qualification | AEC-Q101 |
| Power Dissipation | 200W |
| Transistor Mounting | Through Hole |
| Transistor Polarity | PNP |
| Transition Frequency | 30MHz |
| Transistor Case Style | TO-3P |
| Dc Current Gain Hfe Min | 45hFE |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 15A |
| Collector Emitter Voltage Max | 250V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2535654/)

## NJW3281G (NPN) NJW1302G (PNP) 

## Complementary NPN-PNP Silicon Power Bipolar Transistors 

The NJW3281G and NJW1302G are power transistors for high power audio, disk head positioners and other linear applications. **Features** 

- Exceptional Safe Operating Area 

- NPN/PNP Gain Matching within 10% from 50 mA to 5 A 

- Excellent Gain Linearity 

- High BVCEO 

## **http://onsemi.com** 

**15 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 250 VOLTS 200 WATTS** 

- High Frequency 

- These Devices are Pb−Free and are RoHS Compliant 

## **Benefits** 

- Reliable Performance at Higher Powers 

- Symmetrical Characteristics in Complementary Configurations 

- Accurate Reproduction of Input Signal 

- Greater Dynamic Range 

- High Amplifier Bandwidth 

## **Applications** 

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**----- Start of picture text -----**<br>
PNP NPN<br>COLLECTOR 2, 4 COLLECTOR 2, 4<br>1 1<br>BASE BASE<br>€) ©<br>EMITTER 3 EMITTER 3<br>**----- End of picture text -----**<br>


- High−End Consumer Audio Products 

   - ♦ Home Amplifiers 

   - ♦ Home Receivers 

## **MARKING DIAGRAM** 

- Professional Audio Amplifiers 4 

   - ♦ Theater and Stadium Sound Systems 

   - ♦ Public Address Systems (PAs) 

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**----- Start of picture text -----**<br>
NJWxxxG<br>AYWW<br>TO−3P<br>CASE 340AB<br>STYLES 1,2,3<br>1<br>2<br>3 1 2 3<br>xxxx = 0281 or 0302<br>G = Pb−Free Package<br>AY = Assembly Location= Year<br>Y = Year<br>WW = Work Week<br>**----- End of picture text -----**<br>


**MAXIMUM RATINGS** (TJ = 25 ° C unless otherwise noted) 

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||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
|Rating|Symbol|Value|Unit|
|Collector−Emitter Voltage|VCEO|250|Vdc|
|Collector−Base Voltage|VCBO|250|Vdc|TO−3P|
|CASE 340AB|
|Emitter−Base Voltage|VEBO|5.0|Vdc|
|STYLES 1,2,3|
|Collector−Emitter Voltage − 1.5 V|VCEX|250|Vdc|1|
|2|
|Collector Current|− Continuous|IC|15|Adc|3|1|2|3|
|Collector Current|− Peak (Note 1)|ICM|30|Adc|xxxx|= 0281 or 0302|
|Base Current − Continuous|IB|1.6|Adc|G|= Pb−Free Package|
|Total Power Dissipation @ TDerate Above 25|°|C|C = 25|°|C|PD|1.43200|W/W|°|C|AY|= Assembly Location= Year|
|WW|= Work Week|
|Operating and Storage Junction|TJ, Tstg|65 to +150|°|C|
|Temperature Range|
|oe|
|ORDERING INFORMATION|
|THERMAL CHARACTERISTICS|
|Characteristic|Symbol|Max|Unit|Device|Package|Shipping|
|Thermal Resistance, Junction−to−Case|R|JC|0.625|°|C/W|NJW3281G|TO−3P|30 Units/Rail|
|Thermal Resistance, Junction−to−Ambient|R|JA|40|°|C/W|(Pb−Free)|
|Stresses exceeding Maximum Ratings may damage the device. Maximum|NJW1302G|TO−3P|30 Units/Rail|
|Ratings are stress ratings only. Functional operation above the Recommended|(Pb−Free)|
|=|

**----- End of picture text -----**<br>


Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Pulse Test: Pulse Width = 5 ms, Duty Cycle < 10%. 

Publication Order Number: 

**1** 

© Semiconductor Components Industries, LLC, 2013 **September, 2013 − Rev. 1** 

**NJW3281/D** 

## **NJW3281G (NPN)   NJW1302G (PNP)** 

## **ELECTRICAL CHARACTERISTICS** (TC = 25 ° C unless otherwise noted) 

|**ELECTRICAL CHARACTERISTICS**(TC= 25°C unless otherwise noted)||||||
|---|---|---|---|---|---|
|**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|
|**OFF CHARACTERISTICS**||||||
|Collector−Emitter Sustaining Voltage<br>(IC= 100 mAdc, IB= 0)|VCEO(sus)|250|−|−|Vdc|
|Collector Cutoff Current<br>(VCB= 250 Vdc, IE= 0)|ICBO|−|−|50|�Adc|
|Emitter Cutoff Current<br>(VEB= 5 Vdc, IC= 0)|IEBO|−|−|5|�Adc|
|**SECOND BREAKDOWN**||||||
|Second Breakdown Collector with Base Forward Biased<br>(VCE= 50 Vdc, t = 1 s (non−repetitive)|IS/b|4|−|−|Adc|
|**ON CHARACTERISTICS**||||||
|DC Current Gain<br>(IC= 100 mAdc, VCE= 5 Vdc)<br>(IC= 1 Adc, VCE= 5 Vdc)<br>(IC= 3 Adc, VCE= 5 Vdc)<br>(IC= 5 Adc, VCE= 5 Vdc)<br>(IC= 8 Adc, VCE= 5 Vdc)|hFE|75<br>75<br>75<br>60<br>45|−<br>−<br>−<br>−<br>−|150<br>150<br>150<br>−<br>−|−|
|Collector−Emitter Saturation Voltage<br>(IC= 8 Adc, IB= 0.8 Adc)|VCE(sat)|−|0.4|0.6|Vdc|
|Base−Emitter On Voltage<br>(IC= 8 Adc, VCE= 5 Vdc)|VBE(on)|−|−|1.5|Vdc|
|**DYNAMIC CHARACTERISTICS**||||||
|Current−Gain − Bandwidth Product<br>(IC= 1 Adc, VCE= 5 Vdc, ftest= 1 MHz)|fT|−|30|−|MHz|
|Output Capacitance<br>(VCB= 10 Vdc, IE= 0, ftest= 1 MHz)|Cob|−|−|600|pF|



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**NJW3281G (NPN)   NJW1302G (PNP)** 

## **TYPICAL CHARACTERISTICS** 

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**----- Start of picture text -----**<br>
PNP NJW1302G NPN NJW3281G<br>60 80<br>TJ = 25 ° C VCE = 10 V TJ = 25 ° C VCE = 10 V<br>50 ftest = 1 MHz ftest = 1 MHz<br>60<br>40<br>5 V 5 V<br>30 40<br>20<br>20<br>10<br>0<br>0<br>0.1 1 10 0.1 1 10<br>IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)<br>Figure 1. Typical Current Gain Figure 2. Typical Current Gain<br>Bandwidth Product Bandwidth Product<br>1000 1000<br>VCE = 5 V VCE = 5 V<br>125 ° C 125 ° C<br>25 ° C 25 ° C<br>100 100<br>−30 ° C −30 ° C<br>10 10<br>0.01 0.1 1 10 100 0.1 1 10 100<br>IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)<br>Figure 3. DC Current Gain Figure 4. DC Current Gain<br>1000 1000<br>VCE = 20 V VCE = 20 V<br>125 ° C 125 ° C<br>25 ° C 25 ° C<br>100 100 −30 ° C<br>−30 ° C<br>10 10<br>0.01 0.1 1 10 100 0.1 1 10 10<br>IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)<br>PRODUCT (MHz) PRODUCT (MHz)<br>, CURRENT BANDWIDTH , CURRENT BANDWIDTH<br>fTau fTau<br>, DC CURRENT GAIN , DC CURRENT GAIN<br>FE FE<br>h h<br>, DC CURRENT GAIN , DC CURRENT GAIN<br>FE FE<br>h h<br>**----- End of picture text -----**<br>


**Figure 5. DC Current Gain** 

**Figure 6. DC Current Gain** 

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**NJW3281G (NPN)   NJW1302G (PNP)** 

## **TYPICAL CHARACTERISTICS** 

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**----- Start of picture text -----**<br>
PNP NJW1302G NPN NJW3281G<br>1 1<br>5 A<br>5 A<br>3 A<br>1 A<br>1 A<br>0.1 0.1 0.5 A 3 A<br>0.5 A<br>IC = 0.1 A<br>IC = 0.1 A<br>TJ = 25 ° C TJ = 25 ° C<br>0.01 0.01<br>0.001 0.01 0.1 1 0.001 0.01 0.1 1<br>IB, BASE CURRENT (A) IB, BASE CURRENT (A)<br>Figure 7. Saturation Region Figure 8. Saturation Region<br>1 1<br>IC/IB = 10 IC/IB = 10<br>0.1 25 ° C 0.1<br>25 ° C<br>−30 ° C −30 ° C<br>125 ° C<br>125 ° C<br>0.01 0.01<br>0.01 0.1 1 10 100 0.01 0.1 1 10 100<br>IC, COLLECTER CURRENT (A) IC, COLLECTER CURRENT (A)<br>Figure 9. VCE(sat), Collector−Emitter Saturation Figure 10. VCE(sat), Collector−Emitter<br>Voltage Saturation Voltage<br>1.6 1.6<br>VCE = 5 V VCE = 5 V<br>1.4 1.4<br>1.2 1.2<br>1.0 1.0<br>0.8 −30 ° C 0.8 −30 ° C<br>0.6 25 ° C 0.6 25 ° C<br>0.4 ° 0.4<br>125 C °<br>125 C<br>0.2 0.2<br>0.0 0.0<br>0.01 0.1 1 10 100 0.01 0.1 1 10 100<br>IC, COLLECTER CURRENT (A) IC, COLLECTER CURRENT (A)<br>TION VOLTAGE (V) TION VOLTAGE (V)<br>COLLECTOR−EMITTER SATURA- COLLECTOR−EMITTER SATURA-<br>SATURATION VOLTAGE (V) SATURATION VOLTAGE (V)<br>BASE−EMITTER VOLTAGE (V) BASE−EMITTER VOLTAGE (V)<br>**----- End of picture text -----**<br>


**Figure 11. VBE(on), Base−Emitter Voltage** 

**Figure 12. VBE(on), Base−Emitter Voltage** 

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**NJW3281G (NPN)   NJW1302G (PNP)** 

## **TYPICAL CHARACTERISTICS** 

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**----- Start of picture text -----**<br>
PNP NJW1302G NPN NJW3281G<br>1200 1200<br>TJ = 25 ° C TJ = 25 ° C<br>1000 fTest = 1 MHz 1000 fTest = 1 MHz<br>800 800<br>600 600<br>400 400<br>200 200<br>0 0<br>0 10 20 30 40 50 60 70 80 90 100 0 20 40 60 80 100<br>VCB, COLLECTER−BASE VOLTAGE (V) VCB, COLLECTER−BASE VOLTAGE (V)<br>, OUTPUT CAPACITANCE (pF) , OUTPUT CAPACITANCE (pF)<br>ob ob<br>C C<br>**----- End of picture text -----**<br>


**Figure 13. Output Capacitance** 

**Figure 14. Output Capacitance** 

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**----- Start of picture text -----**<br>
12000 10000<br>TJ = 25 ° C TJ = 25 ° C<br>fTest = 1 MHz f Test  = 1 MHz<br>10000<br>8000<br>8000<br>6000<br>6000<br>4000<br>4000<br>2000 2000<br>0 1 2 3 4 5 6 7 8 9 10 0 2 4 6 8 10<br>VEB, EMITTER−BASE VOLTAGE (V) VEB, EMITTER−BASE VOLTAGE (V)<br>Figure 15. Input Capacitance Figure 16. Input Capacitance<br>, INPUT CAPACITANCE (pF) , INPUT CAPACITANCE (pF)<br>ib ib<br>C C<br>**----- End of picture text -----**<br>


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**NJW3281G (NPN)   NJW1302G (PNP)** 

**==> picture [238 x 185] intentionally omitted <==**

**----- Start of picture text -----**<br>
PNP NJW1302G<br>100<br>10 mSec<br>10<br>100 mSec<br>1 Sec<br>1.0<br>0.1<br>1.0 10 100 1000<br>VCE, COLLECTOR EMITTER (VOLTS)<br>, COLLECTOR CURRENT (AMPS)<br>IC<br>**----- End of picture text -----**<br>


**Figure 17. Active Region Safe Operating Area** 

There are two limitations on the power handling ability of a transistor; average junction temperature and secondary breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. 

**NPN NJW3281G** 

**==> picture [236 x 170] intentionally omitted <==**

**----- Start of picture text -----**<br>
100<br>10 mSec<br>10<br>100 mSec<br>1 Sec<br>1.0<br>0.1<br>1.0 10 100 1000<br>VCE, COLLECTOR EMITTER (VOLTS)<br>, COLLECTOR CURRENT (AMPS)<br>IC<br>**----- End of picture text -----**<br>


**Figure 18. Active Region Safe Operating Area** 

The data of Figures 17 and 18 is based on TJ(pk) = 150°C; TC is variable depending on conditions. At high case temperatures, thermal limitations will reduce the power than can be handled to values less than the limitations imposed by second breakdown. 

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**6** 

MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** 

**TO−3P−3LD** CASE 340AB−01 ISSUE A 

DATE 30 OCT 2007 

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**----- Start of picture text -----**<br>
NOTES:<br>A SEATINGPLANE 1. DIMENSIONING AND TOLERANCING PER ASME<br>B B C Y14.5M, 1994.<br>U 2. CONTROLLING DIMENSION: MILLIMETERS<br>4 Q E 3. AND IS MEASURED BETWEEN 0.15 AND 0.30mmDIMENSION b APPLIES TO PLATED TERMINAL<br>FROM THE TERMINAL TIP.<br>SCALE 1:1 4. DIMENSION A AND B DO NOT INCLUDE MOLD<br>FLASH, PROTRUSIONS, OR GATE BURRS.<br>A L MILLIMETERS<br>DIM MIN NOM MAX<br>A 19.70 19.90 20.10<br>B 15.40 15.60 15.80<br>C 4.60 4.80 5.00<br>D 0.80 1.00 1.20<br>(3 ° ) E 1.45 1.50 1.65<br>P K F 1.80 2.00 2.20<br>G 5.45 BSC<br>H 1.20 1.40 1.60<br>J 0.55 0.60 0.75<br>1 2 3 a, d a = K 19.80 20.00 20.20<br>L 18.50 18.70 18.90<br>3X D H F P 3.30 3.50 3.70<br>0.25 M A B S J W QU 3.10 5.00 REF3.20 3.50<br>W 2.80 3.00 3.20<br>G G<br>GENERIC MARKING<br>DIAGRAM*<br>STYLE 1: STYLE 2: STYLE 3:<br>PIN 1. BASE PIN 1. ANODE PIN 1. GATE<br>2. COLLECTOR 2. CATHODE 2. DRAIN<br>3. EMITTER 3. ANODE 3. SOURCE<br>4. COLLECTOR 4. CATHODE 4. DRAIN xxxxxG<br>**----- End of picture text -----**<br>


xxxxxG AYWW 

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**----- Start of picture text -----**<br>
xxxxx = Specific Device Code<br>G = Pb−Free Package<br>A = Assembly Location<br>Y = Year<br>WW = Work Week<br>**----- End of picture text -----**<br>


*This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G”, may or not be present. 

Electronic versions are uncontrolled except when accessed directly from the Document Repository. **DOCUMENT NUMBER: 98AON25095D** Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red. **DESCRIPTION: TO−3P−3LD PAGE 1 OF 1** ~~a~~ ON Semiconductor and          are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. 

Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red. 

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© Semiconductor Components Industries, LLC, 2019 

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