# Bipolar (BJT) Single Transistor, Audio, PNP, 250 V, 15 A, 150 W, TO-3P, Through Hole
**URL**: https://novapart.co/products/NJW0302G/bipolar-bjt-single-transistor-audio-pnp-250-v-15-a
**SKU**: NJW0302G
**Manufacturer**: ONSEMI
**Category**: Semiconductors - Discretes || Transistors || Bipolar Transistors || Single Bipolar Junction Transistors - BJT
**Price**: €1.8200
**Stock**: 100+
**Lead Time**: 2 days (indicative)
## Description
Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:250V; Transition Frequency ft:30MHz; Power Dissipation Pd:150W; DC Collector Current:-15A; DC Current Gain hFE:75hFE; Transist
## Specifications
| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | Lead (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 150W |
| Transistor Mounting | Through Hole |
| Transistor Polarity | PNP |
| Transition Frequency | 30MHz |
| Transistor Case Style | TO-3P |
| Dc Current Gain Hfe Min | 75hFE |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 15A |
| Collector Emitter Voltage Max | 250V |
## Datasheet
📄 [Download PDF](https://novapart.co/datasheet/farnell:2101386/)
## NJW0281G (NPN) NJW0302G (PNP)
## Complementary NPN-PNP Power Bipolar Transistors
These complementary devices are lower power versions of the popular NJW3281G and NJW1302G audio output transistors. With superior gain linearity and safe operating area performance, these transistors are ideal for high fidelity audio amplifier output stages and other linear applications.
## **Features**
- Exceptional Safe Operating Area
- NPN/PNP Gain Matching within 10% from 50 mA to 3 A
## **http://onsemi.com**
## **15 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 250 VOLTS, 150 WATTS**
- Excellent Gain Linearity
- High BVCEO
- High Frequency
- These Devices are Pb−Free and are RoHS Compliant
## **Benefits**
- Reliable Performance at Higher Powers
- Symmetrical Characteristics in Complementary Configurations
**==> picture [162 x 88] intentionally omitted <==**
**----- Start of picture text -----**
PNP NPN
COLLECTOR 2, 4 COLLECTOR 2, 4
1 1
BASE BASE
©) ©
EMITTER 3 EMITTER 3
**----- End of picture text -----**
- Accurate Reproduction of Input Signal
- Greater Dynamic Range
- High Amplifier Bandwidth
## **MARKING** 4 **DIAGRAM**
## **Applications**
- High−End Consumer Audio Products
- ♦ Home Amplifiers
NJWxxxG ♦ Home Receivers AYWW • Professional Audio Amplifiers ♦ Theater and Stadium Sound Systems **TO−3P** ♦ Public Address Systems (PAs) **CASE 340AB STYLES 1,2,3 MAXIMUM RATINGS** 1 **Rating Symbol Value Unit** iT 2 oT 3 Collector−Emitter Voltage VCEO 250 Vdc 1 2 3 xxxx = 0281 or 0302 Collector−Base Voltage VCBO 250 Vdc G = Pb−Free Package Emitter−Base Voltage VEBO 5.0 Vdc A = Assembly Location Y = Year Collector−Emitter Voltage − 1.5 V VCEX 250 Vdc WW = Work Week Collector Current − Continuous IC 15 Adc Collector Current − Peak (Note 1) ICM 30 Adc **ORDERING INFORMATION** Base Current − Continuous IB 1.5 Adc Total Power Dissipation @ TC = 25 ° C PD 150 Watts **Device Package Shipping** Operating and Storage Junction TJ, Tstg − 65 to ° C NJW0281G (Pb−Free)TO−3P 30 Units/Rail Temperature Range +150 NJW0302G TO−3P 30 Units/Rail Stresses exceeding Maximum Ratings may damage the device. Maximum (Pb−Free) ~~=u~~ Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Pulse Test: Pulse Width = 5.0 ms, Duty Cycle < 10%.
Publication Order Number: **NJW0281/D**
**1**
© Semiconductor Components Industries, LLC, 2013 **September, 2013 − Rev. 1**
**NJW0281G (NPN) NJW0302G (PNP)**
## **THERMAL CHARACTERISTICS**
|**THERMAL CHARACTERISTICS**|||||
|---|---|---|---|---|
|**Characteristic**|**Symbol**|**Value**||**Unit**|
|Thermal Resistance, Junction−to−Case|RθJC|0.83||°C/W|
|**ELECTRICAL CHARACTERISTICS**(TC= 25°C unless otherwise noted)|||||
|**Characteristic**|**Symbol**|**Min**|**Max**|**Unit**|
|**OFF CHARACTERISTICS**|||||
|Collector−Emitter Sustaining Voltage
(IC= 30 mA, IB= 0)|VCEO(sus)|250|−|V|
|Collector Cutoff Current
(VCB= 250 V, IE= 0)|ICBO|−|10|�A|
|Emitter Cutoff Current
(VEB= 5.0 V, IC= 0)|IEBO|−|5.0|�A|
|**ON CHARACTERISTICS**|||||
|DC Current Gain
(IC= 0.5 A, VCE= 5.0 V)
(IC= 1.0 A, VCE= 5.0 V)
(IC= 3.0 A, VCE= 5.0 V)|hFE|75
75
75|150
150
150|−|
|Collector−Emitter Saturation Voltage
(IC= 5.0 A, IB= 0.5 A)|VCE(sat)|−|1.0|V|
|Base−Emitter On Voltage
(IC= 5.0 A, VCE= 5.0 V)|VBE(on)|−|1.2|V|
|**DYNAMIC CHARACTERISTICS**|||||
|Current−Gain − Bandwidth Product
(IC= 1.0 A, VCE= 5.0 V, ftest= 1.0 MHz)|fT|30|−|MHz|
|Output Capacitance
(VCB= 10 V, IE= 0, ftest= 1.0 MHz)|Cob|−|400|pF|
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**----- Start of picture text -----**
160
140
120
100
80
60
40
20
0
0 20 40 60 80 100 120 140 160
TC, CASE TEMPERATURE ( ° C)
, POWER DISSIPATION (W)
D
P
**----- End of picture text -----**
**Figure 1. Power Derating**
**==> picture [237 x 174] intentionally omitted <==**
**----- Start of picture text -----**
100
1.0 ms
10 5.0 ms
10 ms
100 ms
1
DC
0.1
0.01
1 10 100 1000
VCE, COLLECTOR−EMITTER VOLTAGE (V)
, COLLECTOR CURRENT (A)
IC
**----- End of picture text -----**
**Figure 2. Safe Operating Area**
**http://onsemi.com**
**2**
**NJW0281G (NPN) NJW0302G (PNP)**
**==> picture [492 x 174] intentionally omitted <==**
**----- Start of picture text -----**
500 500
VCE = 5.0 V VCE = 5.0 V
100 ° C 100 ° C
100 100
−25 ° C 25 ° C −25 ° C
25 ° C
10 10
0.05 0.1 1 10 50 0.05 0.1 1 10 50
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
, DC CURRENT GAIN , DC CURRENT GAIN
FE FE
h h
**----- End of picture text -----**
**Figure 3. NJW0281G DC Current Gain**
**Figure 4. NJW0302G DC Current Gain**
**==> picture [492 x 402] intentionally omitted <==**
**----- Start of picture text -----**
1.4 2.4
VCE = 5.0 V VCE = 5.0 V
1.2
1.9
1
−25 ° C
1.4
0.8
0.6 25 ° C 0.9 −25 ° C
100 ° C
0.4
100 ° C
0.4
0.2
25 ° C
0 −0.1
0.01 0.1 1 10 100 0.01 0.1 1 10 100
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
Figure 5. NJW0281G Base−Emitter Voltage Figure 6. NJW0302G Base−Emitter Voltage
10 10
IC/IB= 10 IC/IB= 10
1 1
100 ° C
25 ° C 100 ° C
0.1 0.1 25 ° C
−25 ° C
−25 ° C
0.01 0.01
0.01 0.1 1 10 100 0.01 0.1 1 10 100
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
, BASE−EMITTER VOLTAGE (V) , BASE−EMITTER VOLTAGE (V)
BE(on) BE(on)
V V
, COLLECTOR−EMITTER , COLLECTOR−EMITTER
SATURATION VOLTAGE (V) SATURATION VOLTAGE (V)
CE(sat) CE(sat)
V V
**----- End of picture text -----**
**Figure 7. NJW0281G Saturation Voltage**
**Figure 8. NJW0302G Saturation Voltage**
**http://onsemi.com**
**3**
**NJW0281G (NPN) NJW0302G (PNP)**
**==> picture [492 x 177] intentionally omitted <==**
**----- Start of picture text -----**
60 70
VCE= 5.0 V VCE= 5.0 V
60
50
50
40
40
30
30
20
25 ° C 20 25 ° C
10
10
0 0
0.01 0.1 1 10 0.01 0.1 1 10
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
PRODUCT (MHz) PRODUCT (MHz)
, CURRENT GAIN BANDWIDTH , CURRENT GAIN BANDWIDTH
fT fT
**----- End of picture text -----**
**Figure 9. NJW0281G Current Gain Bandwidth Product**
**Figure 10. NJW0302G Current Gain Bandwidth Product**
**http://onsemi.com**
**4**
MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS**
**TO−3P−3LD** CASE 340AB−01 ISSUE A
DATE 30 OCT 2007
**==> picture [469 x 256] intentionally omitted <==**
**----- Start of picture text -----**
NOTES:
A SEATINGPLANE 1. DIMENSIONING AND TOLERANCING PER ASME
B B C Y14.5M, 1994.
U 2. CONTROLLING DIMENSION: MILLIMETERS
4 Q E 3. AND IS MEASURED BETWEEN 0.15 AND 0.30mmDIMENSION b APPLIES TO PLATED TERMINAL
FROM THE TERMINAL TIP.
SCALE 1:1 4. DIMENSION A AND B DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR GATE BURRS.
A L MILLIMETERS
DIM MIN NOM MAX
A 19.70 19.90 20.10
B 15.40 15.60 15.80
C 4.60 4.80 5.00
D 0.80 1.00 1.20
(3 ° ) E 1.45 1.50 1.65
P K F 1.80 2.00 2.20
G 5.45 BSC
H 1.20 1.40 1.60
J 0.55 0.60 0.75
1 2 3 a, d a = K 19.80 20.00 20.20
L 18.50 18.70 18.90
3X D H F P 3.30 3.50 3.70
0.25 M A B S J W QU 3.10 5.00 REF3.20 3.50
W 2.80 3.00 3.20
G G
GENERIC MARKING
DIAGRAM*
STYLE 1: STYLE 2: STYLE 3:
PIN 1. BASE PIN 1. ANODE PIN 1. GATE
2. COLLECTOR 2. CATHODE 2. DRAIN
3. EMITTER 3. ANODE 3. SOURCE
4. COLLECTOR 4. CATHODE 4. DRAIN xxxxxG
**----- End of picture text -----**
xxxxxG AYWW
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**----- Start of picture text -----**
xxxxx = Specific Device Code
G = Pb−Free Package
A = Assembly Location
Y = Year
WW = Work Week
**----- End of picture text -----**
*This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G”, may or not be present.
Electronic versions are uncontrolled except when accessed directly from the Document Repository. **DOCUMENT NUMBER: 98AON25095D** Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. **DESCRIPTION: TO−3P−3LD PAGE 1 OF 1** ~~a~~ ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others.
Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
www.onsemi.com
© Semiconductor Components Industries, LLC, 2019
**onsemi** , , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “ **onsemi** ” or its affiliates and/or subsidiaries in the United States and/or other countries. **onsemi** owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of **onsemi** ’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. **onsemi** reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and **onsemi** makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using **onsemi** products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by **onsemi** . “Typical” parameters which may be provided in **onsemi** data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. **onsemi** does not convey any license under any of its intellectual property rights nor the rights of others. **onsemi** products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use **onsemi** products for any such unintended or unauthorized application, Buyer shall indemnify and hold **onsemi** and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that **onsemi** was negligent regarding the design or manufacture of the part. **onsemi** is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
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◊
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