# Bipolar (BJT) Single Transistor, NPN, 80 V, 8 A, 20 W, TO-252 (DPAK), Surface Mount ![Product image](https://novapart.co/image/farnell:3003883RL/) **URL**: https://novapart.co/products/NJVMJD44H11T4G-VF01/bipolar-bjt-single-transistor-npn-80-v-8-a-20-w-to **SKU**: NJVMJD44H11T4G-VF01 **Manufacturer**: ONSEMI **Category**: Semiconductors - Discretes || Transistors || Bipolar Transistors || Single Bipolar Junction Transistors - BJT **Price**: €0.3170 **Stock**: 1000+ **Lead Time**: 2 days (indicative) ## Description Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:80V; Transition Frequency ft:85MHz; Power Dissipation Pd:20W; DC; Available until stocks are exhausted Alternative available ## Specifications | Parameter | Value | |---|---| | Msl | MSL 1 - Unlimited | | Svhc | No SVHC (15-Jan-2018) | | No. Of Pins | 3Pins | | Product Range | - | | Qualification | - | | Power Dissipation | 20W | | Transistor Mounting | Surface Mount | | Transistor Polarity | NPN | | Transition Frequency | 85MHz | | Transistor Case Style | TO-252 (DPAK) | | Dc Current Gain Hfe Min | 40hFE | | Operating Temperature Max | 150°C | | Continuous Collector Current | 8A | | Collector Emitter Voltage Max | 80V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:3003883RL/) ## NJVMJD4xH11xxG-VF01 ## Complementary Power Transistors **DPAK for Surface Mount Applications** Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. ## **Features** - NJVMJD44H11 is NPN - NJVMJD45H11 is PNP - Lead Formed for Surface Mount Application in Plastic Sleeves (No Suffix) - Electrically Similar to Popular D44H/D45H Series - Low Collector Emitter Saturation Voltage - Fast Switching Speeds - Complementary Pairs Simplifies Designs - Epoxy Meets UL 94 V−0 @ 0.125 in - NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable **www.onsemi.com** ## **SILICON POWER TRANSISTORS 8 AMPERES 80 VOLTS, 20 WATTS** **==> picture [174 x 103] intentionally omitted <==** **----- Start of picture text -----**
COMPLEMENTARY
COLLECTOR COLLECTOR
2, 4 2, 4
1 1
BASE BASE
6) &
3 3
EMITTER EMITTER
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- These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS 4 - Compliant 1[2] **MAXIMUM RATINGS** (TA = 25 C, common for NPN and PNP, minus 3 sign, “−”, for PNP omitted, unless otherwise noted) **DPAK Rating Symbol Max Unit CASE 369C** Collector−Emitter Voltage VCEO 80 Vdc **STYLE 1** Emitter−Base Voltage VEB 5 Vdc Collector Current − Continuous IC 8 Adc **MARKING DIAGRAM** Collector Current − Peak ICM 16 Adc Total Power Dissipation @ TDerate above 25C = 25 ° C ° C PD 0.1620 W/W ° C AYWWJ4 xH11G Total Power Dissipation (Note 1) PD @ TA = 25 ° C 1.75 W Derate above 25 ° C 0.014 W/ ° C A = Assembly Location Operating and Storage Junction TJ, Tstg −55 to +150 ° C Y = Year Temperature Range WW = Work Week J4xH11 = Device Code ESD − Human Body Model HBM 3B V x = 4 or 5 ~~=~~ ESD − Machine Model MM C V G = Pb−Free Package Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. **ORDERING INFORMATION** **ORDERING INFORMATION** See detailed ordering and shipping information in the package dimensions section on page 7 of this data sheet. 1. These ratings are applicable when surface mounted on the minimum pad sizes recommended. Publication Order Number: **NJVMJD4XH11XXG−VF01/D** **1** © Semiconductor Components Industries, LLC, 2017 **August, 2017 − Rev. 1** **NJVMJD4xH11xxG−VF01** ## **THERMAL CHARACTERISTICS** |**THERMAL CHARACTERISTICS**|||| |---|---|---|---| |**Characteristic**|**Symbol**|**Max**|**Unit**| |Thermal Resistance, Junction−to−Case|R�JC|6.25|°C/W| |Thermal Resistance, Junction−to−Ambient (Note 2)|R�JA|71.4|°C/W| |Lead Temperature for Soldering|TL|260|°C| 2. These ratings are applicable when surface mounted on the minimum pad sizes recommended. ## **ELECTRICAL CHARACTERISTICS** (TA = 25 � C, common for NPN and PNP, minus sign, “−”, for PNP omitted, unless otherwise noted) |**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**| |---|---|---|---|---|---| |**OFF CHARACTERISTICS**|||||| |Collector−Emitter Sustaining Voltage
(IC= 30 mA, IB= 0)|VCEO(sus)|80|−|−|Vdc| |Collector Cutoff Current
(VCE= Rated VCEO, VBE= 0)|ICES|−|−|1.0|�A| |Emitter Cutoff Current
(VEB= 5 Vdc)|IEBO|−|−|1.0|�A| |**ON CHARACTERISTICS**|||||| |Collector−Emitter Saturation Voltage
(IC= 8 Adc, IB= 0.4 Adc)|VCE(sat)|−|−|1|Vdc| |Base−Emitter Saturation Voltage
(IC= 8 Adc, IB= 0.8 Adc)|VBE(sat)|−|−|1.5|Vdc| |DC Current Gain
(VCE= 1 Vdc, IC= 2 Adc)
(VCE= 1 Vdc, IC= 4 Adc)|hFE|60
40|−
−|−
−|−| |**DYNAMIC CHARACTERISTICS**|||||| |Collector Capacitance
(VCB= 10 Vdc, ftest= 1 Mhz)
MJD44H11
MJD45H11|Ccb|−
−|45
130|−
−|pF| |Gain Bandwidth Product
(IC= 0.5 Adc, VCE= 10 Vdc, f = 20 Mhz)
MJD44H11
MJD45H11|fT|−
−|85
90|−
−|MHz| |**SWITCHING TIMES**|||||| |Delay and Rise Times
(IC= 5 Adc, IB1= 0.5 Adc)
MJD44H11
MJD45H11|td+ tr|−
−|300
135|−
−|ns| |Storage Time
(IC= 5 Adc, IB1= IB2= 0.5 Adc)
MJD44H11
MJD45H11|ts|−
−|500
500|−
−|ns| |Fall Time
(IC= 5 Adc, IB1= IB2= 0.5 Adc)
MJD44H11
MJD45H11|tf|−
−|140
100|−
−|ns| Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. **www.onsemi.com** **2** **NJVMJD4xH11xxG−VF01** **==> picture [492 x 168] intentionally omitted <==** **----- Start of picture text -----**
1
0.7
D = 0.5
0.5
0.3
0.2
0.2 0.1 R�JC(t) = r(t) R�JC P(pk)
0.1 R�JC = 6.25°C/W MAX
0.05 D CURVES APPLY FOR POWER
0.07
0.05 0.02 PULSE TRAIN SHOWN READ TIME AT t 1 t 1 t2
0.03 0.01 T J(pk) - T C = P (pk) � JC(t) DUTY CYCLE, D = t1/t2
0.02 SINGLE PULSE
0.01
0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1 2 3 5 10 20 30 50 100 200 300 500 1 k
t, TIME (ms)
RESISTANCE (NORMALIZED)
r(t), EFFECTIVE TRANSIENT THERMAL
**----- End of picture text -----**
**Figure 1. Thermal Response** **==> picture [236 x 170] intentionally omitted <==** **----- Start of picture text -----**
20
10 500��s 100��s
5
3 dc 5�ms 1�ms
2
1
0.5 THERMAL LIMIT @ TC = 25°C
0.3 WIRE BOND LIMIT
0.1
0.05
0.02
1 3 5 7 10 20 30 50 70 100
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (AMP)
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There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 2 is based on TJ(pk) = 150�C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) ≤ 150�C. TJ(pk) may be calculated from the data in Figure 1. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. **Figure 2. Maximum Forward Bias Safe Operating Area** **==> picture [251 x 184] intentionally omitted <==** **----- Start of picture text -----**
TA TC
2.5 25
2 20
TC
1.5 15
1 10 TA
SURFACE
MOUNT
0.5 5
0 0
25 50 75 100 125 150
T, TEMPERATURE (°C)
PD, POWER DISSIPATION (WATTS)
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**Figure 3. Power Derating** **www.onsemi.com** **3** **NJVMJD4xH11xxG−VF01** **==> picture [242 x 173] intentionally omitted <==** **----- Start of picture text -----**
1000
VCE = 1 V
150 ° C
25 ° C
−55 ° C
100
10
0.01 0.1 1 10
IC, COLLECTOR CURRENT (A)
, DC CURRENT GAIN
FE
h
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**Figure 4. MJD44H11 DC Current Gain** **==> picture [242 x 383] intentionally omitted <==** **----- Start of picture text -----**
1000
VCE = 4 V
150 ° C
25 ° C
−55 ° C
100
10
0.01 0.1 1 10
IC, COLLECTOR CURRENT (A)
Figure 6. MJD44H11 DC Current Gain
0.8
0.7 IC/IB = 20
150 ° C
0.6
0.5
0.4
0.3 25 ° C
0.2
−55 ° C
0.1
0
0.01 0.1 1 10
IC, COLLECTOR CURRENT (A)
, DC CURRENT GAIN
FE
h
, COLL−EMIT SATURATION VOLTAGE (V)
CE(sat)
V
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**Figure 8. MJD44H11 Saturation Voltage V CE(sat)** **==> picture [239 x 173] intentionally omitted <==** **----- Start of picture text -----**
1000
VCE = 1 V
150 ° C
25 ° C
−55 ° C
100
10
0.01 0.1 1 10
IC, COLLECTOR CURRENT (A)
, DC CURRENT GAIN
FE
h
**----- End of picture text -----**
**Figure 5. MJD45H11 DC Current Gain** **==> picture [239 x 383] intentionally omitted <==** **----- Start of picture text -----**
1000
VCE = 4 V
150 ° C
25 ° C
−55 ° C
100
10
0.01 0.1 1 10
IC, COLLECTOR CURRENT (A)
Figure 7. MJD45H11 DC Current Gain
0.8
0.7 IC/IB = 20
−55 ° C
0.6
0.5
0.4
25 ° C
0.3
150 ° C
0.2
0.1
0
0.01 0.1 1 10
IC, COLLECTOR CURRENT (A)
, DC CURRENT GAIN
FE
h
, COLL−EMIT SATURATION VOLTAGE (V)
CE(sat)
V
**----- End of picture text -----**
**==> picture [167 x 22] intentionally omitted <==** **----- Start of picture text -----**
Figure 9. MJD45H11 Saturation Voltage
V
CE(sat)
**----- End of picture text -----**
**www.onsemi.com** **4** **NJVMJD4xH11xxG−VF01** **==> picture [491 x 382] intentionally omitted <==** **----- Start of picture text -----**
1.4 1.4
1.2 1.2
1.0 1.0
−55 ° C −55 ° C
0.8 0.8
25 ° C 25 ° C
0.6 0.6
150 ° C 150 ° C
0.4 0.4
0.2 IC/IB = 20 0.2 IC/IB = 20
0 0
0.01 0.1 1 10 0.01 0.1 1 10
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
Figure 10. MJD44H11 Saturation Voltage Figure 11. MJD45H11 Saturation Voltage
V V
BE(sat) BE(sat)
2.0 2.0
1.8 TA = 25 ° C 1.8 TA = 25 ° C
1.6 1.6
1.4 1.4
1.2 1.2
1.0 1.0
0.8 0.8
IC = 8 A
0.6 0.6
IC = 8 A
0.4 0.4 IC = 3 A
0.2 IC = 0.1 A 0.5 A 1 A IC = 3 A 0.2 IC = 0.1 A 0.5 A 1 A
0 0
0.1 1 10 100 1000 10,000 0.1 1 10 100 1000 10,000
IB, BASE CURRENT (mA) IB, BASE CURRENT (mA)
VOLTAGE (V) VOLTAGE (V)
, BASE−EMIT SATURATION , BASE−EMIT SATURATION
BE(sat) BE(sat)
V V
, COLLECTOR−EMITTER VOLTAGE (V) , COLLECTOR−EMITTER VOLTAGE (V)
CE CE
V V
**----- End of picture text -----**
**Figure 12. MJD44H11 Collector Saturation Region** **==> picture [244 x 172] intentionally omitted <==** **----- Start of picture text -----**
1000
Cob
100
10
0.1 1 10 100
VR, REVERSE VOLTAGE (V)
C, CAPACITANCE (pF)
**----- End of picture text -----**
**Figure 14. MJD44H11 Capacitance** **Figure 13. MJD45H11 Collector Saturation Region** **==> picture [240 x 172] intentionally omitted <==** **----- Start of picture text -----**
1000
Cob
100
10
0.1 1 10 100
VR, REVERSE VOLTAGE (V)
C, CAPACITANCE (pF)
**----- End of picture text -----**
**Figure 15. MJD45H11 Capacitance** **www.onsemi.com** **5** ## **NJVMJD4xH11xxG−VF01** **==> picture [490 x 198] intentionally omitted <==** **----- Start of picture text -----**
100 100
VCE = 2 V VCE = 2 V
10 10
0.01 0.1 1 10 0.01 0.1 1 10
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
Figure 16. MJD44H11 Figure 17. MJD45H11
Current−Gain−Bandwidth Product Current−Gain−Bandwidth Product
PRODUCT PRODUCT
, CURRENT−GAIN−BANDWIDTH , CURRENT−GAIN−BANDWIDTH
fTau fTau
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**www.onsemi.com** **6** **NJVMJD4xH11xxG−VF01** ## **ORDERING INFORMATION** |**ORDERING INFORMATION**||| |---|---|---| |**Device**|**Package Type**|**Shipping**†| |NJVMJD44H11RLG−VF01*|DPAK
(Pb−Free)|1,800 / Tape & Reel| |NJVMJD44H11T4G−VF01*|DPAK
(Pb−Free)|2,500 / Tape & Reel| |NJVMJD45H11RLG−VF01*|DPAK
(Pb−Free)|1,800 / Tape & Reel| |NJVMJD45H11T4G−VF01*|DPAK
(Pb−Free)|2,500 / Tape & Reel| †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable **www.onsemi.com** **7** **NJVMJD4xH11xxG−VF01** ## **PACKAGE DIMENSIONS** **DPAK (SINGLE GAUGE)** CASE 369C ISSUE F **==> picture [152 x 40] intentionally omitted <==** **----- Start of picture text -----**
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. THERMAL PAD CONTOUR OPTIONAL WITHIN DI-
MENSIONS b3, L3 and Z.
**----- End of picture text -----**
**==> picture [481 x 413] intentionally omitted <==** **----- Start of picture text -----**
A 1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
E C 2. CONTROLLING DIMENSION: INCHES.
A 3. THERMAL PAD CONTOUR OPTIONAL WITHIN DI-
b3 B c2 4. DIMENSIONS D AND E DO NOT INCLUDE MOLDMENSIONS b3, L3 and Z.
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
4 NOT EXCEED 0.006 INCHES PER SIDE.
L3 bale Z 5. DIMENSIONS D AND E ARE DETERMINED AT THE
D DETAIL A H 6. DATUMS A AND B ARE DETERMINED AT DATUMOUTERMOST EXTREMES OF THE PLASTIC BODY.
1 2 3 PLANE H.
7. OPTIONAL MOLD FEATURE.
L4 NOTE 7 DIM MININCHESMAX MILLIMETERSMIN MAX
b2 c BOTTOM VIEW A 0.086 0.094 2.18 2.38
e SIDE VIEW A1 0.000 0.005 0.00 0.13
b b 0.025 0.035 0.63 0.89
TOP VIEW 0.005 (0.13) M C b2b3 0.0280.180 0.0450.215 0.724.57 1.145.46
c 0.018 0.024 0.46 0.61
c2 0.018 0.024 0.46 0.61
H Z Z D 0.235 0.245 5.97 6.22
E 0.250 0.265 6.35 6.73
e 0.090 BSC 2.29 BSC
L2 [GAUGE] PLANE C SEATINGPLANE H 0.370 0.410 9.40 10.41
L 0.055 0.070 1.40 1.78
L1 0.114 REF 2.90 REF
L2 0.020 BSC 0.51 BSC
L L3 0.035 0.050 0.89 1.27
A1 BOTTOM VIEW L4 −−− 0.040 −−− 1.01
pet L1 s Sa CONSTRUCTIONS t ALTERNATE Z 0.155 −−− 3.93 −−−
DETAIL A
ROTATED 9 CW STYLE 1:
SOLDERING FOOTPRINT* PIN 1. BASE
2. COLLECTOR
3. EMITTER
6.20 3.00 4. COLLECTOR
0.244 0.118
2.58
0.102
5.80
1.60 6.17
0.228
0.063 0.243
Ts.
SCALE 3:1 mm
inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
**----- End of picture text -----**
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