# Bipolar (BJT) Single Transistor, PNP, 40 V, 3 A, 2 W, SOT-223, Surface Mount
**URL**: https://novapart.co/products/NJV4030PT1G/bipolar-bjt-single-transistor-pnp-40-v-3-a-2-w-sot
**SKU**: NJV4030PT1G
**Manufacturer**: ONSEMI
**Category**: Semiconductors - Discretes || Transistors || Bipolar Transistors || Single Bipolar Junction Transistors - BJT
**Price**: €0.1860
**Stock**: 1000+
**Lead Time**: 2 days (indicative)
## Description
Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-40V; Transition Frequency ft:160MHz; Power Dissipation Pd:2W; DC Collector Current:-3A; DC Current Gain hFE:100hFE; T
## Specifications
| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 4Pins |
| Product Range | - |
| Qualification | AEC-Q101 |
| Power Dissipation | 2W |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | PNP |
| Transition Frequency | 160MHz |
| Transistor Case Style | SOT-223 |
| Dc Current Gain Hfe Min | 100hFE |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 3A |
| Collector Emitter Voltage Max | 40V |
## Datasheet
📄 [Download PDF](https://novapart.co/datasheet/farnell:2724363/)
Bipolar Power Transistors **PNP Silicon**
## NJT4030P, NJV4030P
## **Features**
- Epoxy Meets UL 94, V−0 @ 0.125 in
- NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
- These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
## **www.onsemi.com**
## **PNP TRANSISTOR 3.0 AMPERES 40 VOLTS, 2.0 WATTS**
**MAXIMUM RATINGS** (TC = 25 ° C unless otherwise noted) COLLECTOR 2,4 **Rating Symbol Value Unit** Collector−Emitter Voltage VCEO 40 Vdc BASE 1 Collector−Base Voltage VCB 40 Vdc Emitter−Base Voltage VEB 6.0 Vdc EMITTER 3 Base Current − Continuous IB 1.0 Adc **MARKING** Collector Current − Continuous IC 3.0 Adc **DIAGRAM** Collector Current − Peak ICM 5.0 Adc 4 **SOT−223** AYW ESD − Human Body Model HBM 3B V 1 ~~_~~ **CASE 318E** 4030P 2 ESD − Machine Model MM C V 3 **STYLE 1** ~~Se~~ Stresses exceeding those listed in the Maximum Ratings table may damage the 1 device. If any of these limits are exceeded, device functionality should not be A = Assembly Location assumed, damage may occur and reliability may be affected. Y Year **THERMAL CHARACTERISTICS** W = Work Week 4030P = Specific Device Code **Characteristic Symbol Max Unit** = Pb−Free Package Total Power Dissipation PD W (Note: Microdot may be in either location) Total PD @ TA = 25 ° C (Note 1) 2.0 Total PD @ TA = 25 ° C (Note 2) 0.80 Thermal Resistance ° C/W **ORDERING INFORMATION** Junction−to−Case R JC 11 Junction−to−Ambient (Note 1) R JA 64 **Device Package Shipping**[†] Junction−to−Ambient (Note 2) R JA 155 NJT4030PT1G SOT−223 1000 / Tape & Maximum Lead Temperature for Soldering TL 260 ° C NJV4030PT1G (Pb−Free) Reel Purposes, 1/8” from case for 5 seconds Operating and Storage Junction TJ, Tstg −55 to ° C NJT4030PT3G (Pb−Free)SOT−223 4000 / Tape &Reel Temperature Range +150 NJV4030PT3G ~~—~~ 1. Mounted on 1” sq. (645 sq. mm) Collector pad on FR−4 bd material. †For information on tape and reel specifications, 2. Mounted on 0.012” sq. (7.6 sq. mm) Collector pad on FR−4 bd material. including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
2. Mounted on 0.012” sq. (7.6 sq. mm) Collector pad on FR−4 bd material.
Publication Order Number: **NJT4030P/D**
**1**
© Semiconductor Components Industries, LLC, 2013 **February, 2021 − Rev. 7**
## **NJT4030P, NJV4030P**
## **ELECTRICAL CHARACTERISTICS** (TC = 25 ° C unless otherwise noted)
|**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|
|---|---|---|---|---|---|
|**OFF CHARACTERISTICS**||||||
|Collector−Emitter Sustaining Voltage
(IC= 10 mAdc, IB= 0 Adc)|VCEO(sus)|40|−|−|Vdc|
|Emitter−Base Voltage
(IE= 50�Adc, IC= 0 Adc)|VEBO|6.0|−|−|Vdc|
|Collector Cutoff Current
(VCB= 40 Vdc)|ICBO|−|−|100|nAdc|
|Emitter Cutoff Current
(VBE= 6.0 Vdc)|IEBO|−|−|100|nAdc|
|**ON CHARACTERISTICS**(Note 3)||||||
|Collector−Emitter Saturation Voltage
(IC= 0.5 Adc, IB= 5.0 mAdc)
(IC= 1.0 Adc, IB= 10 mAdc)
(IC= 3.0 Adc, IB= 0.3 Adc)|VCE(sat)|−
−
−|−
−
−|0.150
0.200
0.500|Vdc|
|Base−Emitter Saturation Voltage
(IC= 1.0 Adc, IB= 0.1 Adc)|VBE(sat)|−|−|1.0|Vdc|
|Base−Emitter On Voltage
(IC= 1.0 Adc, VCE= 2.0 Vdc)|VBE(on)|−|−|1.0|Vdc|
|DC Current Gain
(IC= 0.5 Adc, VCE= 1.0 Vdc)
(IC= 1.0 Adc, VCE= 1.0 Vdc)
(IC= 3.0 Adc, VCE= 1.0 Vdc)|hFE|220
200
100|−
−
−|−
400
−|−|
|**DYNAMIC CHARACTERISTICS**||||||
|Output Capacitance
(VCB= 10 Vdc, f = 1.0 MHz)|Cob|−|40|−|pF|
|Input Capacitance
(VEB= 5.0 Vdc, f = 1.0 MHz)|Cib|−|130|−|pF|
|Current−Gain − Bandwidth Product (Note 4)
(IC= 500 mA, VCE= 10 V, Ftest= 1.0 MHz)|fT|−|160|−|MHz|
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: Pulse Width ≤ 300 � s, Duty Cycle ≤ 2%. 4. fT = |hFE| • ftest
**==> picture [244 x 175] intentionally omitted <==**
**----- Start of picture text -----**
2.5
2.0
TC
1.5
1.0
TA
0.5
0
25 50 75 100 125 150
TJ, TEMPERATURE ( ° C)
, POWER DISSIPATION (W)
D
P
**----- End of picture text -----**
**Figure 1. Power Derating**
**www.onsemi.com**
**2**
**NJT4030P, NJV4030P**
## **TYPICAL CHARACTERISTICS**
**==> picture [491 x 591] intentionally omitted <==**
**----- Start of picture text -----**
600 700
VCE = 1 V VCE = 4 V
150 ° C 600
500 150 ° C
500
400
25 ° C 400
300 25 ° C
300
200 −40 ° C −40 ° C
200
100 100
0 0
0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
Figure 2. DC Current Gain Figure 3. DC Current Gain
1 1
IC/IB = 10 150 ° C IC/IB = 50
25 ° C −40 ° C 150 ° C
0.1
25 ° C −40 ° C
0.1
0.01
0.001 0.01
0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
Figure 4. Collector−Emitter Saturation Voltage Figure 5. Collector−Emitter Saturation Voltage
1 1.2
1.1 VCE = 2 V
1.0
0.9
IC = 2 A −40 ° C
0.8
1 A 0.7
0.1 0.5 A 0.6 25 ° C
0.5
0.1 A
0.4
0.3 150 ° C
0.2
0.1
0.01 0
1.0E−04 1.0E−03 1.0E−02 1.0E−01 1.0E+00 0.001 0.01 0.1 1 10
IB, BASE CURRENT (A) IC, COLLECTOR CURRENT (A)
, DC CURRENT GAIN , DC CURRENT GAIN
FE FE
h h
, COLLECTOR−EMITTER , COLLECTOR−EMITTER
SATURATION VOLTAGE (V) SATURATION VOLTAGE (V)
CE(sat) CE(sat)
V V
, COLLECTOR−EMITTER
, EMITTER−BASE VOLTAGE (V)
SATURATION VOLTAGE (V)
CE(sat)
V
BE(on)
V
**----- End of picture text -----**
**Figure 6. Collector Saturation Region**
**Figure 7. VBE(on) Voltage**
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**3**
**NJT4030P, NJV4030P**
## **TYPICAL CHARACTERISTICS**
**==> picture [491 x 591] intentionally omitted <==**
**----- Start of picture text -----**
1.3 1.2
1.2 IC/IB = 10 1.1 IC/IB = 50
1.1 1.0
1.0 0.9
0.9 −40 ° C 0.8 −40 ° C
0.8
0.7
0.7
0.6 25 ° C 0.6 25 ° C
0.5
0.5
0.4 150 ° C 0.4 °
150 C
0.3
0.3
0.2 0.2
0.1 0.1
0 0
0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
Figure 8. Base−Emitter Saturation Voltage Figure 9. Base−Emitter Saturation Voltage
350 100
300 ftestTJ = 1 MHz = 25 ° C TJ = 25 ° C
80 ftest = 1 MHz
250
60
200
150
40
100
20
50
0 0
0 1 2 3 4 5 6 0 5 10 15 20 25 30 35
VEB, EMITTER BASE VOLTAGE (V) VCB, COLLECTOR BASE VOLTAGE (V)
Figure 10. Input Capacitance Figure 11. Output Capacitance
200 10
180 TJ = 25 ° C
ftest = 1 MHz 0.5 ms
160
VCE = 10 V 1 ms
140
1
120 10 ms
100
100 ms
80
0.1
60
40
20
0 0.01
0.001 0.01 0.1 1 1 10 100
IC, COLLECTOR CURRENT (A) VCE, COLLECTOR−EMITTER VOLTAGE (V)
, EMITTER−BASE , EMITTER−BASE
BE(sat) BE(sat)
V V
SATURATION VOLTAGE (V) SATURATION VOLTAGE (V)
, INPUT CAPACITANCE (pF)
, OUTPUT CAPACITANCE (pF)
ibo
C obo
C
PRODUCT (MHz)
, CURRENT BANDWIDTH
fTau , COLLECTOR CURRENT (A)IC
**----- End of picture text -----**
**Figure 12. Current−Gain Bandwidth Product**
**Figure 13. Safe Operating Area**
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**4**
MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS**
**SOT−223 (TO−261)** CASE 318E−04 ISSUE R
**SCALE 1:1**
## DATE 02 OCT 2018
**DOCUMENT NUMBER: 98ASB42680B**
**DESCRIPTION: SOT−223 (TO−261)**
Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
**PAGE 1 OF 2**
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others.
www.onsemi.com
© Semiconductor Components Industries, LLC, 2018
DATE 02 OCT 2018
## **SOT−223 (TO−261)** CASE 318E−04 ISSUE R
STYLE 1: STYLE 2: STYLE 3: STYLE 4: STYLE 5: PIN 1. BASE PIN 1. ANODE PIN 1. GATE PIN 1. SOURCE PIN 1. DRAIN 2. COLLECTOR 2. CATHODE 2. DRAIN 2. DRAIN 2. GATE 3. EMITTER 3. NC 3. SOURCE 3. GATE 3. SOURCE 4. COLLECTOR 4. CATHODE 4. DRAIN 4. DRAIN 4. GATE STYLE 6: STYLE 7: STYLE 8: STYLE 9: STYLE 10: PIN 1. RETURN PIN 1. ANODE 1 CANCELLED PIN 1. INPUT PIN 1. CATHODE 2. INPUT 2. CATHODE 2. GROUND 2. ANODE 3. OUTPUT 3. ANODE 2 3. LOGIC 3. GATE 4. INPUT 4. CATHODE 4. GROUND 4. ANODE STYLE 11: STYLE 12: STYLE 13: PIN 1. MT 1 PIN 1. INPUT PIN 1. GATE 2. MT 2 2. OUTPUT 2. COLLECTOR 3. GATE 3. NC 3. EMITTER 4. MT 2 4. OUTPUT 4. COLLECTOR **GENERIC MARKING DIAGRAM*** AYW XXXXX 1 ~~|~~ A = Assembly Location Y = Year W = Work Week XXXXX = Specific Device Code = Pb−Free Package (Note: Microdot may be in either location) *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ ”, may or may not be present. Some products may not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository. **DOCUMENT NUMBER: 98ASB42680B** Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. **DESCRIPTION: SOT−223 (TO−261) PAGE 2 OF 2** ~~—ee~~ ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others.
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© Semiconductor Components Industries, LLC, 2018
**onsemi** , , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “ **onsemi** ” or its affiliates and/or subsidiaries in the United States and/or other countries. **onsemi** owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of **onsemi’s** product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. **onsemi** reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and **onsemi** makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using **onsemi** products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by **onsemi** . “Typical” parameters which may be provided in **onsemi** data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. **onsemi** does not convey any license under any of its intellectual property rights nor the rights of others. **onsemi** products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use **onsemi** products for any such unintended or unauthorized application, Buyer shall indemnify and hold **onsemi** and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that **onsemi** was negligent regarding the design or manufacture of the part. **onsemi** is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
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**==> picture [232 x 43] intentionally omitted <==**
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