# Bipolar (BJT) Single Transistor, PNP, 40 V, 3 A, 2 W, SOT-223, Surface Mount

![Product image](https://novapart.co/image/farnell:2464103/)

**URL**: https://novapart.co/products/NJT4030PT1G/bipolar-bjt-single-transistor-pnp-40-v-3-a-2-w-sot
**SKU**: NJT4030PT1G
**Manufacturer**: ONSEMI
**Category**: Semiconductors - Discretes || Transistors || Bipolar Transistors || Single Bipolar Junction Transistors - BJT
**Price**: €0.2020
**Stock**: 1000+
**Lead Time**: 2 days (indicative)

## Description

Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-40V; Transition Frequency ft:160MHz; Power Dissipation Pd:2W; DC Collector Current:-3A; DC Current Gain hFE:100hFE; Transistor

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 3 - 168 hours |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 4Pins |
| Product Range | - |
| Qualification | AEC-Q101 |
| Power Dissipation | 2W |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | PNP |
| Transition Frequency | 160MHz |
| Transistor Case Style | SOT-223 |
| Dc Current Gain Hfe Min | 100hFE |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 3A |
| Collector Emitter Voltage Max | 40V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2464103/)

NJT4030P, NJV4030P 

## Bipolar Power Transistors **PNP Silicon** 

## **Features** 

- Epoxy Meets UL 94, V−0 @ 0.125 in 

**http://onsemi.com** 

- NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable 

## **PNP TRANSISTOR 3.0 AMPERES 40 VOLTS, 2.0 WATTS** 

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS **40 VOLTS, 2.0 WATTS** Compliant **MAXIMUM RATINGS** (TC = 25 ° C unless otherwise noted) COLLECTOR 2,4 **Rating Symbol Value Unit** BASE 1 Collector−Emitter Voltage VCEO 40 Vdc ~~©~~ Collector−Base Voltage VCB 40 Vdc EMITTER 3 Emitter−Base Voltage VEB 6.0 Vdc Base Current − Continuous IB 1.0 Adc **MARKING** 4 **DIAGRAM** Collector Current − Continuous IC 3.0 Adc 1 2 Collector Current − Peak ICM 5.0 Adc 3 AYW ESD − Human Body Model HBM 3B V **SOT−223** 4030P **CASE 318E** ESD − Machine Model MM C V **STYLE 1** 1 ~~=e~~ Stresses exceeding Maximum Ratings may damage the device. Maximum A = Assembly Location Ratings are stress ratings only. Functional operation above the Recommended Y Year Operating Conditions is not implied. Extended exposure to stresses above the W = Work Week ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRecommended Operating Conditions may affect device reliability. 4030P = Specific Device Code = Pb−Free Package **THERMAL CHARACTERISTICS** ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ **ÎÎÎÎÎÎÎÎÎÎÎÎ Characteristic** ÎÎÎ **Symbol** ÎÎÎÎÎÎÎ **Î Max** Î **Î** ÎÎ **Unit** ÎÎÎÎÎÎÎÎÎÎÎÎTotal Power Dissipation ÎÎÎPD **Î** Î **Î** ÎÎW **ORDERING INFORMATION** Total PD @ TA = 25 ° C (Note 1) 2.0 **Device Package Shipping**[†] ÎÎÎÎÎÎÎÎÎÎÎÎThermal Resistance, Junction−to−CaseTotal PD @ TA = 25 ° C (Note 2) ÎÎÎ **Î** 0.80Î **Î** ÎÎ ° C/W NJT4030PT1GNJV4030PT1G (Pb−Free)SOT−223 1000 / Tape &Reel ÎÎÎÎÎÎÎÎÎÎÎÎJunction−to−Ambient (Note 1) Î R JAÎ **Î** Î64 **Î** ÎÎ **ÎÎÎÎÎÎÎÎÎÎÎÎ** Junction−to−Ambient (Note 2) **Î** R JA **ÎÎ** 155 **ÎÎÎÎ** NJT4030PT3G SOT−223 4000 / Tape & Maximum Lead Temperature for Soldering TL 260 ° C NJV4030PT3G (Pb−Free) Reel ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ **Î** Î **Î** ÎÎ Purposes, 1/8” from case for 5 seconds ÎÎÎÎÎÎÎÎÎÎÎÎOperating and Storage Junction ÎÎÎTJ, Tstg **Î** −55 toÎ **Î** ÎÎ ° C †For information on tape and reel specifications,including part orientation and tape sizes, please ~~See~~ Temperature Range +150 refer to our Tape and Reel Packaging Specifications 1. Mounted on 1” sq. (645 sq. mm) Collector pad on FR−4 bd material. Brochure, BRD8011/D. 2. Mounted on 0.012” sq. (7.6 sq. mm) Collector pad on FR−4 bd material. 

Publication Order Number: **NJT4030P/D** 

**1** 

© Semiconductor Components Industries, LLC, 2013 **November, 2013 − Rev. 5** 

**NJT4030P, NJV4030P** ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ 

|**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**ELECTRICAL CHARACTERISTICS**(TC= 25°C unless otherwise noted)<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>**Characteristic**<br>ÎÎÎ**Î**<br>ÎÎÎ**Î**<br>ÎÎÎ**Î**<br>**Symbol**<br>ÎÎ**Î**<br>ÎÎ**Î**<br>ÎÎ**Î**<br>**Min**<br>ÎÎ**Î**<br>ÎÎ**Î**<br>ÎÎ**Î**<br>**Typ**<br>ÎÎÎ<br>ÎÎÎ<br>ÎÎÎ<br>**Max**<br>ÎÎÎÎ<br>ÎÎÎÎ<br>ÎÎÎÎ<br>**Unit**<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**OFF CHARACTERISTICS**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Collector−Emitter Sustaining Voltage<br>(IC= 10 mAdc, IB= 0 Adc)<br>ÎÎÎ**Î**<br>**ÎÎÎÎ**<br>VCEO(sus)<br>ÎÎ**Î**<br>**ÎÎÎ**<br>40<br>ÎÎ**Î**<br>**ÎÎÎ**<br>−<br>ÎÎÎ<br>**ÎÎÎ**<br>−<br>ÎÎÎÎ<br>**ÎÎÎÎ**<br>Vdc<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Emitter−Base Voltage<br>(IE= 50�Adc, IC= 0 Adc)<br>ÎÎÎ**Î**<br>**ÎÎÎÎ**<br>VEBO<br>ÎÎ**Î**<br>**ÎÎÎ**<br>6.0<br>ÎÎ**Î**<br>**ÎÎÎ**<br>−<br>ÎÎÎ<br>**ÎÎÎ**<br>−<br>ÎÎÎÎ<br>**ÎÎÎÎ**<br>Vdc<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Collector Cutoff Current<br>(VCB= 40 Vdc)<br>ÎÎÎ**Î**<br>**ÎÎÎÎ**<br>ICBO<br>ÎÎ**Î**<br>**ÎÎÎ**<br>−<br>ÎÎ**Î**<br>**ÎÎÎ**<br>−<br>ÎÎÎ<br>**ÎÎÎ**<br>100<br>ÎÎÎÎ<br>**ÎÎÎÎ**<br>nAdc<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Emitter Cutoff Current<br>(VBE= 6.0 Vdc)<br>ÎÎÎ**Î**<br>IEBO<br>ÎÎ**Î**<br>−<br>ÎÎ**Î**<br>−<br>ÎÎÎ<br>100<br>ÎÎÎÎ<br>nAdc<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**ON CHARACTERISTICS**(Note 3)<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Collector−Emitter Saturation Voltage<br>(IC= 0.5 Adc, IB= 5.0 mAdc)<br>(IC= 1.0 Adc, IB= 10 mAdc)<br>(IC= 3.0 Adc, IB= 0.3 Adc)<br>ÎÎÎ**Î**<br>ÎÎÎ**Î**<br>**ÎÎÎÎ**<br>VCE(sat)<br>ÎÎ**Î**<br>ÎÎ**Î**<br>**ÎÎÎ**<br>−<br>−<br>−<br>ÎÎ**Î**<br>ÎÎ**Î**<br>**ÎÎÎ**<br>−<br>−<br>−<br>ÎÎÎ<br>ÎÎÎ<br>**ÎÎÎ**<br>0.150<br>0.200<br>0.500<br>ÎÎÎÎ<br>ÎÎÎÎ<br>**ÎÎÎÎ**<br>Vdc<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Base−Emitter Saturation Voltage<br>(IC= 1.0 Adc, IB= 0.1 Adc)<br>ÎÎÎ**Î**<br>**ÎÎÎÎ**<br>VBE(sat)<br>ÎÎ**Î**<br>**ÎÎÎ**<br>−<br>ÎÎ**Î**<br>**ÎÎÎ**<br>−<br>ÎÎÎ<br>**ÎÎÎ**<br>1.0<br>ÎÎÎÎ<br>**ÎÎÎÎ**<br>Vdc<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Base−Emitter On Voltage<br>(IC= 1.0 Adc, VCE= 2.0 Vdc)<br>ÎÎÎ**Î**<br>**ÎÎÎÎ**<br>VBE(on)<br>ÎÎ**Î**<br>**ÎÎÎ**<br>−<br>ÎÎ**Î**<br>**ÎÎÎ**<br>−<br>ÎÎÎ<br>**ÎÎÎ**<br>1.0<br>ÎÎÎÎ<br>**ÎÎÎÎ**<br>Vdc<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>DC Current Gain<br>(IC= 0.5 Adc, VCE= 1.0 Vdc)<br>(IC= 1.0 Adc, VCE= 1.0 Vdc)<br>(IC= 3.0 Adc, VCE= 1.0 Vdc)<br>ÎÎÎ**Î**<br>ÎÎÎ**Î**<br>ÎÎÎ**Î**<br>hFE<br>ÎÎ**Î**<br>ÎÎ**Î**<br>ÎÎ**Î**<br>220<br>200<br>100<br>ÎÎ**Î**<br>ÎÎ**Î**<br>ÎÎ**Î**<br>−<br>−<br>−<br>ÎÎÎ<br>ÎÎÎ<br>ÎÎÎ<br>−<br>400<br>−<br>ÎÎÎÎ<br>ÎÎÎÎ<br>ÎÎÎÎ<br>−<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**DYNAMIC CHARACTERISTICS**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Output Capacitance<br>(VCB= 10 Vdc, f = 1.0 MHz)<br>ÎÎÎ**Î**<br>**ÎÎÎÎ**<br>Cob<br>ÎÎ**Î**<br>**ÎÎÎ**<br>−<br>ÎÎ**Î**<br>**ÎÎÎ**<br>40<br>ÎÎÎ<br>**ÎÎÎ**<br>−<br>ÎÎÎÎ<br>**ÎÎÎÎ**<br>pF<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Input Capacitance<br>(VEB= 5.0 Vdc, f = 1.0 MHz)<br>ÎÎÎ**Î**<br>**ÎÎÎÎ**<br>Cib<br>ÎÎ**Î**<br>**ÎÎÎ**<br>−<br>ÎÎ**Î**<br>**ÎÎÎ**<br>130<br>ÎÎÎ<br>**ÎÎÎ**<br>−<br>ÎÎÎÎ<br>**ÎÎÎÎ**<br>pF<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>Current−Gain − Bandwidth Product (Note 4)<br>(IC= 500 mA, VCE= 10 V, Ftest= 1.0 MHz)<br>ÎÎÎ**Î**<br>ÎÎÎ**Î**<br>fT<br>ÎÎ**Î**<br>ÎÎ**Î**<br>−<br>ÎÎ**Î**<br>ÎÎ**Î**<br>160<br>ÎÎÎ<br>ÎÎÎ<br>−<br>ÎÎÎÎ<br>ÎÎÎÎ<br>MHz<br>3. Pulse Test: Pulse Width≤300�s, Duty Cycle≤2%.<br>|**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**ELECTRICAL CHARACTERISTICS**(TC= 25°C unless otherwise noted)<br>ÎÎÎ**Î**<br>ÎÎ**Î**<br>ÎÎ**Î**<br>ÎÎÎ<br>ÎÎÎÎ|**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**ELECTRICAL CHARACTERISTICS**(TC= 25°C unless otherwise noted)<br>ÎÎÎ**Î**<br>ÎÎ**Î**<br>ÎÎ**Î**<br>ÎÎÎ<br>ÎÎÎÎ|**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**ELECTRICAL CHARACTERISTICS**(TC= 25°C unless otherwise noted)<br>ÎÎÎ**Î**<br>ÎÎ**Î**<br>ÎÎ**Î**<br>ÎÎÎ<br>ÎÎÎÎ|**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**ELECTRICAL CHARACTERISTICS**(TC= 25°C unless otherwise noted)<br>ÎÎÎ**Î**<br>ÎÎ**Î**<br>ÎÎ**Î**<br>ÎÎÎ<br>ÎÎÎÎ|**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**ELECTRICAL CHARACTERISTICS**(TC= 25°C unless otherwise noted)<br>ÎÎÎ**Î**<br>ÎÎ**Î**<br>ÎÎ**Î**<br>ÎÎÎ<br>ÎÎÎÎ|**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**ELECTRICAL CHARACTERISTICS**(TC= 25°C unless otherwise noted)<br>ÎÎÎ**Î**<br>ÎÎ**Î**<br>ÎÎ**Î**<br>ÎÎÎ<br>ÎÎÎÎ|
|---|---|---|---|---|---|---|
||ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br><br>**Characteristic**<br><br><br>|Î<br><br><br>ÎÎÎ<br><br>**Symbol**<br>|**Î**<br><br><br>ÎÎ**Î**<br><br>**Min**<br>|ÎÎ**Î**<br><br>**Typ**<br>|ÎÎÎ<br><br>**Max**<br><br>Î<br><br>|ÎÎÎ<br><br>**Unit**<br>|
||**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Output Capacitance<br>(VCB= 10 Vdc, f = 1.0 MHz)<br><br>|**Î**ÎÎ<br>**Î**<br>ÎÎÎ<br>**ÎÎÎ**<br>Cob|ÎÎÎ<br><br><br>ÎÎ**Î**<br>**ÎÎ**<br>−|ÎÎÎ<br><br><br>ÎÎ**Î**<br>**ÎÎÎ**<br>40|ÎÎÎ<br><br><br>ÎÎÎ<br>**ÎÎÎ**<br>−<br>Î<br>**Î**|ÎÎÎ<br><br><br>ÎÎÎ<br>**ÎÎÎ**<br>pF|
||ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Input Capacitance<br>(VEB= 5.0 Vdc, f = 1.0 MHz)<br><br>|Î<br><br>ÎÎÎ<br>**ÎÎ**<br>Cib|**Î**<br><br>ÎÎ**Î**<br>**ÎÎ**<br>−|ÎÎ**Î**<br>**ÎÎ**<br>130|ÎÎÎ<br>**ÎÎ**<br>−<br>Î<br>|ÎÎÎ<br>**ÎÎ**<br>pF|
||ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br><br>Current−Gain − Bandwidth Product (Note 4)<br>(IC= 500 mA, VCE= 10 V, Ftest= 1.0 MHz)<br><br>|Î<br><br>ÎÎÎ<br><br>fT|**Î**<br><br>ÎÎ**Î**<br><br>−|ÎÎ**Î**<br><br>160|ÎÎÎ<br><br>−<br>Î<br>|ÎÎÎ<br><br>MHz|
||ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br><br>3. Pulse Test: Pulse Width≤300�s, Duty Cycle≤2%.<br>|Î<br>ÎÎÎ|ÎÎ|ÎÎ**Î**|ÎÎÎ<br>Î|ÎÎÎ|



4. fT = |hFE| • ftest 

**==> picture [244 x 175] intentionally omitted <==**

**----- Start of picture text -----**<br>
2.5<br>2.0<br>TC<br>1.5<br>1.0<br>TA<br>0.5<br>0<br>25 50 75 100 125 150<br>TJ, TEMPERATURE ( ° C)<br>, POWER DISSIPATION (W)<br>D<br>P<br>**----- End of picture text -----**<br>


**Figure 1. Power Derating** 

**http://onsemi.com 2** 

**NJT4030P, NJV4030P** 

## **TYPICAL CHARACTERISTICS** 

**==> picture [491 x 591] intentionally omitted <==**

**----- Start of picture text -----**<br>
600 700<br>VCE = 1 V VCE = 4 V<br>150 ° C 600<br>500 150 ° C<br>500<br>400<br>25 ° C 400<br>300 25 ° C<br>300<br>200 −40 ° C −40 ° C<br>200<br>100 100<br>0 0<br>0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10<br>IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)<br>Figure 2. DC Current Gain Figure 3. DC Current Gain<br>1 1<br>IC/IB = 10 150 ° C IC/IB = 50<br>25 ° C −40 ° C 150 ° C<br>0.1<br>25 ° C −40 ° C<br>0.1<br>0.01<br>0.001 0.01<br>0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10<br>IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)<br>Figure 4. Collector−Emitter Saturation Voltage Figure 5. Collector−Emitter Saturation Voltage<br>1 1.2<br>1.1 VCE = 2 V<br>1.0<br>0.9<br>IC = 2 A −40 ° C<br>0.8<br>1 A 0.7<br>0.1 0.5 A 0.6 25 ° C<br>0.5<br>0.1 A<br>0.4<br>0.3 150 ° C<br>0.2<br>0.1<br>0.01 0<br>1.0E−04 1.0E−03 1.0E−02 1.0E−01 1.0E+00 0.001 0.01 0.1 1 10<br>IB, BASE CURRENT (A) IC, COLLECTOR CURRENT (A)<br>, DC CURRENT GAIN , DC CURRENT GAIN<br>FE FE<br>h h<br>, COLLECTOR−EMITTER , COLLECTOR−EMITTER<br>SATURATION VOLTAGE (V) SATURATION VOLTAGE (V)<br>CE(sat) CE(sat)<br>V V<br>, COLLECTOR−EMITTER<br>, EMITTER−BASE VOLTAGE (V)<br>SATURATION VOLTAGE (V)<br>CE(sat)<br>V<br>BE(on)<br>V<br>**----- End of picture text -----**<br>


**Figure 6. Collector Saturation Region** 

**Figure 7. VBE(on) Voltage** 

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**3** 

**NJT4030P, NJV4030P** 

## **TYPICAL CHARACTERISTICS** 

**==> picture [491 x 591] intentionally omitted <==**

**----- Start of picture text -----**<br>
1.3 1.2<br>1.2 IC/IB = 10 1.1 IC/IB = 50<br>1.1 1.0<br>1.0 0.9<br>0.9 −40 ° C 0.8 −40 ° C<br>0.8<br>0.7<br>0.7<br>0.6 25 ° C 0.6 25 ° C<br>0.5<br>0.5<br>0.4 150 ° C 0.4 °<br>150 C<br>0.3<br>0.3<br>0.2 0.2<br>0.1 0.1<br>0 0<br>0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10<br>IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)<br>Figure 8. Base−Emitter Saturation Voltage Figure 9. Base−Emitter Saturation Voltage<br>350 100<br>300 ftestTJ = 1 MHz = 25 ° C TJ = 25 ° C<br>80 ftest = 1 MHz<br>250<br>60<br>200<br>150<br>40<br>100<br>20<br>50<br>0 0<br>0 1 2 3 4 5 6 0 5 10 15 20 25 30 35<br>VEB, EMITTER BASE VOLTAGE (V) VCB, COLLECTOR BASE VOLTAGE (V)<br>Figure 10. Input Capacitance Figure 11. Output Capacitance<br>200 10<br>180 TJ = 25 ° C<br>ftest = 1 MHz 0.5 ms<br>160<br>VCE = 10 V 1 ms<br>140<br>1<br>120 10 ms<br>100<br>100 ms<br>80<br>0.1<br>60<br>40<br>20<br>0 0.01<br>0.001 0.01 0.1 1 1 10 100<br>IC, COLLECTOR CURRENT (A) VCE, COLLECTOR−EMITTER VOLTAGE (V)<br>, EMITTER−BASE , EMITTER−BASE<br>BE(sat) BE(sat)<br>V V<br>SATURATION VOLTAGE (V) SATURATION VOLTAGE (V)<br>, INPUT CAPACITANCE (pF)<br>, OUTPUT CAPACITANCE (pF)<br>ibo<br>C obo<br>C<br>PRODUCT (MHz)<br>, CURRENT BANDWIDTH<br>fTau , COLLECTOR CURRENT (A)IC<br>**----- End of picture text -----**<br>


**Figure 12. Current−Gain Bandwidth Product** 

**Figure 13. Safe Operating Area** 

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**4** 

**NJT4030P, NJV4030P** 

## **PACKAGE DIMENSIONS** 

**SOT−223 (TO−261)** CASE 318E−04 ISSUE N 

**==> picture [474 x 409] intentionally omitted <==**

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D ISSUE N<br>b1 NOTES:<br>1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.<br>2. CONTROLLING DIMENSION: INCH.<br>4 MILLIMETERS INCHES<br>DIM MIN NOM MAX MIN NOM MAX<br>HE E A 1.50 1.63 1.75 0.060 0.064 0.068<br>1 2 3 A1 0.02 0.06 0.10 0.001 0.002 0.004<br>b 0.60 0.75 0.89 0.024 0.030 0.035<br>b1 2.90 3.06 3.20 0.115 0.121 0.126<br>c 0.24 0.29 0.35 0.009 0.012 0.014<br>b D 6.30 6.50 6.70 0.249 0.256 0.263<br>ocean E 3.30 3.50 3.70 0.130 0.138 0.145<br>e1 e 2.20 2.30 2.40 0.087 0.091 0.094<br>e e e ——— e1 0.85 0.94 1.05 0.033 0.037 0.041<br>L 0.20 −−− −−− 0.008 −−− −−−<br>C L1 1.50 1.75 2.00 0.060 0.069 0.078<br>A H E 6.70 0° 7.00− 7.301 0° 0.264 0° 0.276− 0.2871 0°<br>0.08 (0003) STYLE 1:<br>RS A1 L pS L1 SSS PIN 1. BASE<br>2. COLLECTOR<br>3. EMITTER<br>4. COLLECTOR<br>SOLDERING FOOTPRINT*<br>3.8<br>0.15<br>_ [e] [e]<br>2.0<br>0.079<br>oon<br>6.3<br>2.3 2.3<br>0.248<br>0.091 0.091<br>2.0<br>0.079<br>1.5 SCALE 6:1 mm<br>0.059 inches<br>EYE) E (—)<br>**----- End of picture text -----**<br>


*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 

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## **PUBLICATION ORDERING INFORMATION** 

## **LITERATURE FULFILLMENT** : 

Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA **Phone** : 303−675−2175 or 800−344−3860 Toll Free USA/Canada **Fax** : 303−675−2176 or 800−344−3867 Toll Free USA/Canada **Email** : orderlit@onsemi.com 

**N. American Technical Support** : 800−282−9855 Toll Free USA/Canada 

**ON Semiconductor Website** : **www.onsemi.com** 

**Europe, Middle East and Africa Technical Support: Order Literature** : http://www.onsemi.com/orderlit Phone: 421 33 790 2910 **Japan Customer Focus Center** For additional information, please contact your local Phone: 81−3−5817−1050 Sales Representative 

**http://onsemi.com** 

**NJT4030P/D** 

**5** 



## Links

- [View this product on Novapart](https://novapart.co/products/NJT4030PT1G/bipolar-bjt-single-transistor-pnp-40-v-3-a-2-w-sot)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/on-semiconductor/njt4030pt1g/trans-bipol-pnp-40v-sot223/dp/2464103)
---

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