# Bipolar (BJT) Single Transistor, NPN, 50 V, 2 A, 1.68 W, TO-252 (DPAK), Surface Mount ![Product image](https://novapart.co/image/farnell:2464111/) **URL**: https://novapart.co/products/NJD2873T4G/bipolar-bjt-single-transistor-npn-50-v-2-a-168-w **SKU**: NJD2873T4G **Manufacturer**: ONSEMI **Category**: Semiconductors - Discretes || Transistors || Bipolar Transistors || Single Bipolar Junction Transistors - BJT **Price**: €0.1970 **Stock**: 1000+ **Lead Time**: 2 days (indicative) ## Description Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:50V; Transition Frequency ft:65MHz; Power Dissipation Pd:1.68W; DC Collector Current:2A; DC Current Gain hFE:40hFE; Transistor C ## Specifications | Parameter | Value | |---|---| | Msl | MSL 1 - Unlimited | | Svhc | Lead (25-Jun-2025) | | No. Of Pins | 4Pins | | Product Range | - | | Qualification | - | | Power Dissipation | 1.68W | | Transistor Mounting | Surface Mount | | Transistor Polarity | NPN | | Transition Frequency | 65MHz | | Transistor Case Style | TO-252 (DPAK) | | Dc Current Gain Hfe Min | 40hFE | | Operating Temperature Max | 175°C | | Continuous Collector Current | 2A | | Collector Emitter Voltage Max | 50V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:2464111/) ## NJD2873 ## Power Transistors ## **NPN Silicon DPAK For Surface Mount Applications** Designed for high−gain audio amplifier applications. **www.onsemi.com** ## **Features** **SILICON POWER TRANSISTORS 2 AMPERES 50 VOLTS 15 WATTS** - High DC Current Gain - Low Collector−Emitter Saturation Voltage - High Current−Gain − Bandwidth Product - Epoxy Meets UL 94 V−0 @ 0.125 in - NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable **==> picture [96 x 201] intentionally omitted <==** **----- Start of picture text -----**
COLLECTOR
2,4
1
BASE
3
EMITTER
4
1 2
3
DPAK
CASE 369C
STYLE 1
MARKING DIAGRAM
**----- End of picture text -----**
- These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant ## **MAXIMUM RATINGS** |**MAXIMUM RATINGS**|||| |---|---|---|---| |**Rating**|**Symbol**|**Value**|**Unit**| |Collector−Base Voltage|VCB|50|Vdc| |Collector−Emitter Voltage|VCEO|50|Vdc| |Emitter−Base Voltage|VEB|5|Vdc| |Collector Current − Continuous|IC|2|Adc| |Collector Current − Peak|ICM|3|Adc| |Base Current
~~ee~~|IB
~~ee~~|0.4
~~ee~~|Adc
~~ee~~| |Total Device Dissipation
@ TC= 25°C
Derate above 25°C
~~ee~~|PD
~~ee~~|15
0.1
~~ee~~|W
W/°C
~~ee~~| |Total Device Dissipation
@ TA= 25°C*
Derate above 25°C
~~eo~~|PD
~~eo~~
~~es e~~|1.68
0.011
~~eo~~
~~e~~|W
W/°C
~~eo~~
~~e~~| |Operating and Storage Junction
Temperature Range
~~eo~~
~~es~~|TJ, Tstg
~~eo~~
~~es~~
~~es e~~|−65 to +175
~~eo~~
~~es~~
~~e~~|°C
~~eo~~
~~es~~
~~e~~| |ESD − Human Body Model
~~es~~|HBM
~~es~~
~~es e~~|3B
~~es~~
~~e~~|V
~~es~~
~~e~~| |ESD − Machine Model|MM
~~es e~~|C
~~e~~|V
~~e~~| **==> picture [111 x 86] intentionally omitted <==** **----- Start of picture text -----**
AYWW
J
2873G
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Device
**----- End of picture text -----**
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. **ORDERING INFORMATION Device Package Shipping**[†] NJD2873T4G DPAK 2,500 (Pb−Free) Units / Reel NJVNJD2873T4G DPAK 2,500 (Pb−Free) Units / Reel ~~a~~ †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Publication Order Number: **1** © Semiconductor Components Industries, LLC, 2017 **January, 2017 − Rev. 18** **NJD2873T4/D** **NJD2873** ## **THERMAL CHARACTERISTICS** |**THERMAL CHARACTERISTICS**|||| |---|---|---|---| |**Characteristic**|**Symbol**|**Max**|**Unit**| |Thermal Resistance
Junction−to−Case
Junction−to−Ambient (Note 1)|R�JC
R�JA|10
89.3|°C/W| 1. These ratings are applicable when surface mounted on the minimum pad sizes recommended. ## **ELECTRICAL CHARACTERISTICS** (TC = 25 ° C unless otherwise noted) |**ELECTRICAL CHARACTERISTICS**(TC= 25°C unless otherwise|noted)|||| |---|---|---|---|---| |**Characteristic**|**Symbol**|**Min**|**Max**|**Unit**| |**OFF CHARACTERISTICS**||||| |Collector−Emitter Sustaining Voltage (Note 2)
(IC= 10 mAdc, IB= 0)|VCEO(sus)|50|−|Vdc| |Collector Cutoff Current
(VCB= 50 Vdc, IE= 0)|ICBO|−|100|nAdc| |Emitter Cutoff Current (VBE= 5 Vdc, IC= 0)|IEBO|−|100|nAdc| |**ON CHARACTERISTICS**||||| |DC Current Gain (Note 2)
(IC= 0.5 A, VCE= 2 V)
(IC= 2 Adc, VCE= 2 Vdc)
(IC= 0.75 Adc, VCE= 1.6 Vdc, −40°C≤TJ ≤150°C)|hFE|120
40
80|360
−
360|−| |Collector−Emitter Saturation Voltage (Note 2)
(IC= 1 A, IB= 0.05 A)|VCE(sat)|−|0.3|Vdc| |Base−Emitter Saturation Voltage (Note 2) (IC= 1 A, IB= 0.05 Adc)|VBE(sat)|−|1.2|Vdc| |Base−Emitter On Voltage (Note 2)
(IC= 1 Adc, VCE= 2 Vdc)
(IC= 0.75 Adc, VCE= 1.6 Vdc, −40°C≤TJ ≤150°C)|VBE(on)|−
−|1.2
0.95|Vdc| |**DYNAMIC CHARACTERISTICS**||||| |Current−Gain − Bandwidth Product (Note 3)
(IC= 100 mAdc, VCE= 10 Vdc, ftest= 10 MHz)|fT|65|−|MHz| |Output Capacitance
(VCB= 10 Vdc, IE= 0, f = 0.1 MHz)|Cob|−|80|pF| Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width = 300 � s, Duty Cycle � 2%. 3. fT = ⎪ hfe ⎪• ftest. **www.onsemi.com** **2** **NJD2873** ## **TYPICAL CHARACTERISTICS** **==> picture [238 x 173] intentionally omitted <==** **----- Start of picture text -----**
25
20
15
10
5
0
0 25 50 75 100 125 150 175 200
T, TEMPERATURE (°C)
PD , POWER DISSIPATION (WATTS)
**----- End of picture text -----**
**Figure 1. Power Derating** **==> picture [493 x 395] intentionally omitted <==** **----- Start of picture text -----**
1000 0.4
175 ° C 150 ° C VCE = 2.0 V 175 ° C
150 ° C
0.3 100 ° C
25 ° C
100 100 ° C 25 ° C −40 ° C 0.2 −40 ° C
0.1
Ic/Ib = 20
10 0
0.01 0.1 1 10 0.01 0.1 1 10
IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS)
Figure 2. DC Current Gain Figure 3. Collector−Emitter Saturation Voltage
1.2 1.2
VCE = 2.0 V
1.1 1.1
−40 ° C
1.0 1.0
25 ° C
0.9 0.9
−40 ° C 100 ° C
0.8 0.8
150 ° C
0.7 25 ° C 0.7 175 ° C
0.6 100 ° C 0.6
0.5 150 ° C 0.5
0.4 0.4
0.3 175 ° C Ic/Ib = 20 0.3
0.2 0.2
0.01 0.1 1 10 0.01 0.1 1 10
IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS)
, DC CURRENT GAIN , COLLECTOR−EMITTER
FE
h
SATURATION VOLTAGE (V)
CE(sat)
V
VOLTAGE (V)
, BASE−EMITTER SATURATION , BASE−EMITTER VOLTAGE (V)
BE(sat) BE(on)
V V
**----- End of picture text -----**
**Figure 4. Base−Emitter Saturation Voltage** **Figure 5. Base−Emitter Voltage** **www.onsemi.com** **3** **NJD2873** **==> picture [493 x 582] intentionally omitted <==** **----- Start of picture text -----**
1.0 1000
500 mA TA = 25 ° C TA = 25 ° C
Cibo
0.8
10 mA
100
0.6 1 A Cobo
0.4 100 mA IC = 2 A
10
0.2
1
0
0.01 0.1 1 10 100 1000 0.1 1 10 100
IB, BASE CURRENT (mA) VR, REVERSE VOLTAGE (V)
Figure 6. Saturation Region Figure 7. Capacitance
100 10000
VCE = 10 V
TA = 25 ° C 1 mS
1000
10 mS
100 mS
1 S
100
100
10
1
0
1 10 100 1000 10000 1 10 100
IC, COLLECTOR CURRENT (mA) VCE, COLLECTOR EMITTER VOLTAGE (V)
Figure 8. Saturation Region Figure 9. Capacitance
1
0.7 D = 0.5
0.5
0.3 0.2
0.2 0.1 R�JC(t) = r(t) �JC P (pk)
0.05 R�JC = 10°C/W MAX
0.1
D CURVES APPLY FOR POWER
0.050.070.03 0 (SINGLE PULSE) 0.01 0.02 T PULSE TRAIN SHOWNREAD TIME AT tJ(pk) - T C = P (pk) 1 � JC (t) DUTY CYCLE, D = tt 1 t 2 1 /t 2
0.02
0.01
0.02 0.05 0.1 0.2 0.5 1 2 5 10 20 50 100 200
t, TIME (ms)
, COLLECTOR−EMITTER
C, CAPACITANCE (pF)
SATURATION VOLTAGE (V)
CE(sat)
V
PRODUCT (MHz)
, COLLECTOR CURRENT
, CURRENT GAIN BANDWIDTH IC
ftau
r(t), TRANSIENT THERMAL
RESISTANCE (NORMALIZED)
**----- End of picture text -----**
**Figure 10. Thermal Response** **www.onsemi.com** **4** **NJD2873** ## **PACKAGE DIMENSIONS** **DPAK (SINGLE GAUGE)** CASE 369C ISSUE F **==> picture [481 x 420] intentionally omitted <==** **----- Start of picture text -----**
NOTES:
A 1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
E C 2. CONTROLLING DIMENSION: INCHES.
A 3. THERMAL PAD CONTOUR OPTIONAL WITHIN DI-
b3 B c2 4. DIMENSIONS D AND E DO NOT INCLUDE MOLDMENSIONS b3, L3 and Z.
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
4 NOT EXCEED 0.006 INCHES PER SIDE.
L3 bale Z 5. DIMENSIONS D AND E ARE DETERMINED AT THE
D DETAIL A H 6. DATUMS A AND B ARE DETERMINED AT DATUMOUTERMOST EXTREMES OF THE PLASTIC BODY.
1 2 3 PLANE H.
7. OPTIONAL MOLD FEATURE.
L4 NOTE 7 DIM MININCHESMAX MILLIMETERSMIN MAX
b2 c BOTTOM VIEW A 0.086 0.094 2.18 2.38
e SIDE VIEW A1 0.000 0.005 0.00 0.13
b b 0.025 0.035 0.63 0.89
TOP VIEW 0.005 (0.13) M C b2b3 0.0280.180 0.0450.215 0.724.57 1.145.46
c 0.018 0.024 0.46 0.61
c2 0.018 0.024 0.46 0.61
H Z Z D 0.235 0.245 5.97 6.22
E 0.250 0.265 6.35 6.73
e 0.090 BSC 2.29 BSC
L2 [GAUGE] PLANE C SEATINGPLANE H 0.370 0.410 9.40 10.41
L 0.055 0.070 1.40 1.78
L1 0.114 REF 2.90 REF
L2 0.020 BSC 0.51 BSC
L L3 0.035 0.050 0.89 1.27
A1 BOTTOM VIEW L4 −−− 0.040 −−− 1.01
pet L1 s Sa CONSTRUCTIONS t ALTERNATE Z 0.155 −−− 3.93 −−−
DETAIL A
ROTATED 9 CW STYLE 1:
SOLDERING FOOTPRINT* PIN 1. BASE
2. COLLECTOR
3. EMITTER
6.20 3.00 4. COLLECTOR
0.244 0.118
2.58
0.102
5.80
1.60 6.17
0.228
0.063 0.243
Ts.
SCALE 3:1 mm
inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
**----- End of picture text -----**
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