# IGBT, 100 A, 1.45 V, 223 W, 600 V, TO-247, 3 Pins ![Product image](https://novapart.co/image/farnell:2321654/) **URL**: https://novapart.co/products/NGTG50N60FWG./igbt-100-a-145-v-223-w-600-to-247-3-pins **SKU**: NGTG50N60FWG. **Manufacturer**: ONSEMI **Category**: Semiconductors - Discretes || IGBTs || Single IGBTs **Price**: €3.9100 **Stock**: 10+ ## Specifications | Parameter | Value | |---|---| | No. Of Pins | 3Pins | | Power Dissipation | 223W | | Transistor Mounting | Through Hole | | Transistor Case Style | TO-247 | | Operating Temperature Max | 150°C | | Continuous Collector Current | 100A | | Collector Emitter Voltage Max | 600V | | Collector Emitter Saturation Voltage | 1.45V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:2321654/) ## NGTG50N60FWG ## IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. ## **Features** **http://onsemi.com** - Optimized for Very Low VCEsat - Low Switching Loss Reduces System Power Dissipation - 5 s Short−Circuit Capability - These are Pb−Free Devices ## **50 A, 600 V** **VCEsat = 1.50 V** **==> picture [462 x 401] intentionally omitted <==** **----- Start of picture text -----**
Typical Applications
C
• Solar Inverters
• Uninterruptible Power Supples (UPS)
• Motor Drives
G
ABSOLUTE MAXIMUM RATINGS
Rating Symbol Value Unit E
Collector−emitter voltage VCES 600 V
Collector current IC A
@ TC = 25 ° C 100
@ TC = 100 ° C 50
=a
Pulsed collector current, Tpulse ICM 200 A
limited by TJmax G TO−247
ee ee C
Short−circuit withstand time tSC 5 s E CASE 340L
VGE = 15 V, VCE = 300 V, STYLE 4
TJ ≤ +150 ° C
a
Gate−emitter voltage VGE 20 V
Transient Gate−Emitter Voltage 30 MARKING DIAGRAM
er Power Dissipation PD W
@ TC = 25 ° C 223
@ TC = 100 ° C 89
— Operating junction temperature TJ −55 to +150 ° C Fol
range
G50N60F
Storage temperature range Tstg −55 to +150 ° C AYWWG
+++) Lead temperature for soldering, 1/8” TSLD 260 ° C ft
from case for 5 seconds
+>
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
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**ORDERING INFORMATION Device Package Shipping** NGTG50N60FWG TO−247 30 Units / Rail (Pb−Free) ~~es~~ Publication Order Number: **NGTG50N60FW/D** **1** © Semiconductor Components Industries, LLC, 2012 **December, 2012 − Rev. 0** **NGTG50N60FWG** ## **THERMAL CHARACTERISTICS** |**THERMAL CHARACTERISTICS**|||| |---|---|---|---| |**Rating**|**Symbol**|**Value**|**Unit**| |Thermal resistance junction−to−case, for IGBT|R�JC|0.56|°C/W| |Thermal resistance junction−to−ambient|R�JA|40|°C/W| |**ELECTRICAL CHARACTERISTICS**(TJ= 25°C unless otherwise specified)|||| |**THERMAL CHARACTERISTICS**|**THERMAL CHARACTERISTICS**||||||||| |---|---|---|---|---|---|---|---|---|---| |**Rating**||**Symbol**||**Value**|||**Unit**||| |Thermal resistance junction−to−case, for IGBT||R�JC||0.56|||°C/W||| |Thermal resistance junction−to−ambient||R�JA||40|||°C/W||| |**ELECTRICAL CHARACTERISTICS**(TJ= 25°C unless otherwise specified)|||||||||| |**Parameter**|**Test Conditions**||**Symbol**||**Min**|**Typ**||**Max**|**Unit**| |**STATIC CHARACTERISTIC**|||||||||| |Collector−emitter breakdown voltage,
gate−emitter short−circuited|VGE=0 V, IC= 500�A||V(BR)CES||600|−||−|V| |Collector−emitter saturation voltage|VGE= 15 V, IC= 50 A
VGE= 15 V, IC= 50 A, TJ= 150°C||VCEsat||1.25
−|1.45
1.7||1.7
−|V| |Gate−emitter threshold voltage|VGE= VCE, IC= 350�A||VGE(th)||4.5|5.5||6.5|V| |Collector−emitter cut−off current, gate−
emitter short−circuited|VGE= 0 V, VCE= 600 V
VGE= 0 V, VCE= 600 V, TJ =150°C||ICES||−
−|−
−||0.5
2|mA| |Gate leakage current, collector−emitter
short−circuited|VGE= 20 V , VCE= 0 V||IGES||−|−||200|nA| |**DYNAMIC CHARACTERISTIC**|||||||||| |Input capacitance|VCE= 20 V, VGE= 0 V, f = 1 MHz||Cies||−|7300||−|pF| |Output capacitance|||Coes||−|195||−|| |Reverse transfer capacitance|||Cres||−|170||−|| |Gate charge total|VCE= 480 V, IC= 50 A, VGE= 15 V||Qg||−|310||−|nC| |Gate to emitter charge|||Qge||−|60||−|| |Gate to collector charge|||Qgc||−|150||−|| |**SWITCHING CHARACTERISTIC, INDUCTIVE LOAD**|||||||||| |Turn−on delay time|TJ= 25°C
VCC= 400 V, IC= 50 A
Rg= 10�
VGE= 0 V/ 15 V*||td(on)||−|117||−|ns| |Rise time|||tr||−|43||−|| |Turn−off delay time|||td(off)||−|285||−|| |Fall time|||tf||−|105||−|| |Turn−on switching loss|||Eon||−|1.1||−|mJ| |Turn−off switching loss|||Eoff||−|1.2||−|| |Total switching loss|||Ets||−|2.3||−|| |Turn−on delay time|TJ= 150°C
VCC= 400 V, IC= 50 A
Rg= 10�
VGE= 0 V/ 15 V*||td(on)||−|112||−|ns| |Rise time|||tr||−|45||−|| |Turn−off delay time|||td(off)||−|300||−|| |Fall time|||tf||−|214||−|| |Turn−on switching loss|||Eon||−|1.4||−|mJ| |Turn−off switching loss|||Eoff||−|2.0||−|| |Total switching loss|||Ets||−|3.4||−|| *Includes diode reverse recovery loss using NGTB50N60FWG. **http://onsemi.com 2** **NGTG50N60FWG** ## **TYPICAL CHARACTERISTICS** **==> picture [238 x 173] intentionally omitted <==** **----- Start of picture text -----**
250
TJ = 25 ° C
VGE = 17 V to 13 V
200
11 V
150
10 V
100
9 V
50
7 V 8 V
0
0 1 2 3 4 5 6 7 8
VCE, COLLECTOR−EMITTER VOLTAGE (V)
, COLLECTOR CURRENT (A)
IC
**----- End of picture text -----**
**Figure 1. Output Characteristics** **==> picture [236 x 173] intentionally omitted <==** **----- Start of picture text -----**
250
TJ = 150 ° C VGE = 17 V to 13 V
200
11 V
150
10 V
100
9 V
50
8 V
7 V
0
0 1 2 3 4 5 6 7 8
VCE, COLLECTOR−EMITTER VOLTAGE (V)
, COLLECTOR CURRENT (A)
IC
**----- End of picture text -----**
**Figure 2. Output Characteristics** **==> picture [245 x 399] intentionally omitted <==** **----- Start of picture text -----**
250
TJ = −40 ° C
VGE = 17 V to 13 V
200
11 V
150
10 V
100
50
9 V
7 V to 8 V
0
0 1 2 3 4 5 6 7 8
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 3. Output Characteristics
3.0
2.5 IC = 100 A
2.0
IC = 50 A
1.5 IC = 10 A
1.0 IC = 5 A
0.5
0
−75 −25 25 75 125 175
TJ, JUNCTION TEMPERATURE ( ° C)
Figure 5. VCE(sat) vs. TJ
, COLLECTOR CURRENT (A)
IC
, COLLECTOR−EMITTER VOLTAGE (V)
CE
V
**----- End of picture text -----**
**==> picture [239 x 172] intentionally omitted <==** **----- Start of picture text -----**
200
180
160 TJ = 25 ° C TJ = 150 ° C
140
120
100
80
60
40
20
0
0 4 8 12 16
VGE, GATE−EMITTER VOLTAGE (V)
, COLLECTOR CURRENT (A)
IC
**----- End of picture text -----**
**Figure 4. Typical Transfer Characteristics** **==> picture [243 x 171] intentionally omitted <==** **----- Start of picture text -----**
10000
Cies
1000
Coes
100
Cres
10
0 10 20 30 40 50 60 70 80 90 100
VCE, COLLECTOR−EMITTER VOLTAGE (V)
CAPACITANCE (pF)
**----- End of picture text -----**
**Figure 6. Typical Capacitance** **http://onsemi.com** **3** **NGTG50N60FWG** ## **TYPICAL CHARACTERISTICS** **==> picture [237 x 173] intentionally omitted <==** **----- Start of picture text -----**
20
15 VCE = 480 V
10
5
0
0 50 100 150 200 250 300 350
QG, GATE CHARGE (nC)
, GATE−EMITTER VOLTAGE (V)
GE
V
**----- End of picture text -----**
**Figure 7. Typical Gate Charge** **==> picture [491 x 381] intentionally omitted <==** **----- Start of picture text -----**
2.5 1000
VCE = 400 V
VGE = 15 V td(off)
2 IC = 50 A
Rg = 10 � Eoff td(on)
100
tf
1.5
Eon tr
1.0
10
VCE = 400 V
0.5 VGE = 15 V
IC = 50 A
Rg = 10 �
0 1
0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160
TJ, JUNCTION TEMPERATURE ( ° C) TJ, JUNCTION TEMPERATURE ( ° C)
Figure 8. Switching Loss vs. Temperature Figure 9. Switching Time vs. Temperature
4.5 1000
4 VVCEGE = 400 V = 15 V tf
3.5 TJ = 150 ° C td(off)
Rg = 10 �
3 100
td(on)
2.5 Eoff
tr
2 Eon
1.5 10
VCE = 400 V
1 VGE = 15 V
0.5 TJ = 150 ° C
Rg = 10 �
0 1
8 20 32 44 56 68 80 92 104 8 20 32 44 56 68 80 92 104
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
SWITCHING LOSS (mJ) SWITCHING TIME (ns)
SWITCHING LOSS (mJ) SWITCHING TIME (ns)
**----- End of picture text -----**
**Figure 10. Switching Loss vs. IC** **Figure 11. Switching Time vs. IC** **http://onsemi.com** **4** **NGTG50N60FWG** ## **TYPICAL CHARACTERISTICS** **==> picture [492 x 591] intentionally omitted <==** **----- Start of picture text -----**
7 10,000
VCE = 400 V
6 VGE = 15 V
IC = 50 A
5 TJ = 150 ° C Eon 1000 td(off)
td(on)
4
100 tf
3
Eoff tr
2 10 VCE = 400 V
VGE = 15 V
1 IC = 50 A
TJ = 150 ° C
0 1
5 15 25 35 45 55 65 75 85 5 15 25 35 45 55 65 75 85
Rg, GATE RESISTOR ( � ) Rg, GATE RESISTOR ( � )
Figure 12. Switching Loss vs. Rg Figure 13. Switching Time vs. Rg
3 1000
VGE = 15 V
IC = 50 A td(off)
2.4 Rg = 10 �
TJ = 150 ° C Eoff tf td(on)
100
1.8 Eon tr
1.2
10 VGE = 15 V
IC = 50 A
0.6
Rg = 10 �
TJ = 150 ° C
0 1
175 225 275 325 375 425 475 525 575 175 225 275 325 375 425 475 525 575
VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 14. Switching Loss vs. VCE Figure 15. Switching Time vs. VCE
1000 1000
100 � s
100
1 ms 50 � s
100
10 dc operation
1
Single NonrepetitivePulse TC = 25 ° C 10
0.1 Curves must be derated VGE = 15 V, TC = 125 ° C
linearly with increase
in temperature
0.01 1
1 10 100 1000 1 10 100 1000
VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V)
SWITCHING LOSS (mJ) SWITCHING TIME (ns)
SWITCHING LOSS (mJ) SWITCHING TIME (ns)
, COLLECTOR CURRENT (A) , COLLECTOR CURRENT (A)
IC IC
**----- End of picture text -----**
**Figure 16. Safe Operating Area** **Figure 17. Reverse Bias Safe Operating Area** **http://onsemi.com** **5** **NGTG50N60FWG** ## **TYPICAL CHARACTERISTICS** **==> picture [491 x 176] intentionally omitted <==** **----- Start of picture text -----**
1
50% Duty Cycle R JC = 0.56
20%
emer
0.1 a 10% mene ee et | Ri ( ° C/W) i [(][sec][)]
5% OAT Junction R1 R2 Rn Case 0.050410.02087 6.84E−51.0E−4 ann
0.07919 0.002
2% Ci = i/Ri 0.11425 0.03
et =i
0.01 HIE 1% III 0.19393 0.1
C1 C2 Cn 0.09951 2.0
Sep Single Pulse op Duty Factor = t1/t2 Tor
0.001 ATIFn ETE TTI ETI PTET Peak T J = P DM x Z JC + T C at
0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
PULSE TIME (sec)
C/W)
°
R(t) (
**----- End of picture text -----**
**Figure 18. IGBT Transient Thermal Impedance** **Figure 19. Test Circuit for Switching Characteristics** **http://onsemi.com** **6** **NGTG50N60FWG** **Figure 20. Definition of Turn On Waveform** **http://onsemi.com 7** **NGTG50N60FWG** **Figure 21. Definition of Turn Off Waveform** **http://onsemi.com** **8** **NGTG50N60FWG** ## **PACKAGE DIMENSIONS** **TO−247** CASE 340L−02 ISSUE F **==> picture [448 x 211] intentionally omitted <==** **----- Start of picture text -----**
−T− NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
C Y14.5M, 1982.
− B− 2. CONTROLLING DIMENSION: MILLIMETER.
E
MILLIMETERS INCHES
U L DIMA 20.32 MIN 21.08 MAX 0.800 MIN MAX 8.30
N 4 B 15.75 16.26 0.620 0.640
C 4.70 5.30 0.185 0.209
A −Q− DE 1.001.90 1.402.60 0.0400.075 0.0550.102
1 2 3 _ 0.63 (0.025) [M] T B M F 1.65 2.13 0.065 0.084
G 5.45 BSC 0.215 BSC
H 1.50 2.49 0.059 0.098
P J 0.40 0.80 0.016 0.031
−Y− K 19.81 20.83 0.780 0.820
L 5.40 6.20 0.212 0.244
K N 4.32 5.49 0.170 0.216
P --- 4.50 --- 0.177
Q 3.55 3.65 0.140 0.144
U 6.15 BSC 0.242 BSC
W 2.87 3.12 0.113 0.123
W J
F 2 PL H STYLE 4:PIN 1. GATE
tt G : === 2. COLLECTOR
I D 3 PL | 3. EMITTER
4. COLLECTOR
0.25 (0.010) [M] Y Q S
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