# IGBT, 100 A, 1.7 V, 595 W, 600 V, TO-247, 3 Pins ![Product image](https://novapart.co/image/farnell:2492863/) **URL**: https://novapart.co/products/NGTB75N60SWG./igbt-100-a-17-v-595-w-600-to-247-3-pins **SKU**: NGTB75N60SWG. **Manufacturer**: ONSEMI **Category**: Semiconductors - Discretes || IGBTs || Single IGBTs **Price**: €1.6800 **Stock**: 10+ ## Specifications | Parameter | Value | |---|---| | No. Of Pins | 3Pins | | Power Dissipation | 595W | | Transistor Mounting | Through Hole | | Transistor Case Style | TO-247 | | Operating Temperature Max | 175°C | | Continuous Collector Current | 100A | | Collector Emitter Voltage Max | 600V | | Collector Emitter Saturation Voltage | 1.7V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:2492863/) ## NGTB75N60SWG ## IGBT - Inverter Welding This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for welding applications. Incorporated into the device is a soft and fast co−packaged free wheeling diode with a low forward voltage. ## **www.onsemi.com** **75 A, 600 V VCEsat = 1.70 V EOFF = 1.0 mJ** ## **Features** - TJmax = 175°C - Soft Fast Reverse Recovery Diode - Optimized for High Speed Switching - 5 s Short−Circuit Capability **==> picture [66 x 87] intentionally omitted <==** **----- Start of picture text -----**
C
G
E
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- These are Pb−Free Devices ## **Typical Applications** - Welding ## **ABSOLUTE MAXIMUM RATINGS** **==> picture [466 x 336] intentionally omitted <==** **----- Start of picture text -----**
||||||||||| |---|---|---|---|---|---|---|---|---|---| |ABSOLUTE MAXIMUM RATINGS| |E| |Rating|Symbol|Value|Unit| |Collector−emitter voltage|VCES|600|V| |es| |Collector current|IC|A| |@ TC = 25|°|C|100| |@ TC = 100|°|C|75| |es|ee| |Diode Forward Current|IF|A| |@ TC = 25|°|C|100|G|TO−247| |ce|@ TC = 100|°|C|75|C|E|CASE 340AL| |Diode Pulsed Current|IFM|200|A| |TPULSE Limited by TJ Max| |ee|ee| |Pulsed collector current, Tpulse|ICM|200|A|MARKING DIAGRAM| |limited by TJmax| |ee|Short−circuit withstand time|ee|tSC|5|s|__| |VGE = 15 V, VCE = 400 V,| |TJ|≤|+150|°|C| |Gate−emitter voltage|VGE|20|V| |V|75N60S| |Transient gate−emitter voltage|30|AYWWG| |(TPULSE = 5 s, D < 0.10)| |ee| |Power Dissipation|PD|W| |@|TC = 25|°|C|595| |@ TC = 100|°|C|265| |ee|Operating junction temperature|TJ|ee|−55 to +175|°|C| |range| |ee|ee|A|= Assembly Location| |ee|Storage temperature rangeLead temperature for soldering, 1/8”from case for 5 seconds|Ge|TTSLDstg|−55 to +175260|ee|°°|CC|YWWG|= Work Week= Year= Pb−Free Package| |eeee|ee| **----- End of picture text -----**
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ## **ORDERING INFORMATION** **==> picture [180 x 34] intentionally omitted <==** **----- Start of picture text -----**
|||| |---|---|---| |Device|Package|Shipping| |NGTB75N60SWG|TO−247|30 Units / Rail| |(Pb−Free)| **----- End of picture text -----**
Publication Order Number: **NGTB75N60SW/D** **1** © Semiconductor Components Industries, LLC, 2014 **December, 2014 − Rev. 1** **NGTB75N60SWG** ## **THERMAL CHARACTERISTICS** |**THERMAL CHARACTERISTICS**|||| |---|---|---|---| |**Rating**|**Symbol**|**Value**|**Unit**| |Thermal resistance junction−to−case, for IGBT|R�JC|0.28|°C/W| |Thermal resistance junction−to−case, for Diode|R�JC|0.62|°C/W| |Thermal resistance junction−to−ambient|R�JA|40|°C/W| ## **ELECTRICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise specified) |**Parameter**|**Test Conditions**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**| |---|---|---|---|---|---|---| |**STATIC CHARACTERISTIC**||||||| |Collector−emitter breakdown voltage,
gate−emitter short−circuited|VGE=0 V, IC= 500�A|V(BR)CES|600|−|−|V| |Collector−emitter saturation voltage|VGE= 15 V, IC= 75 A
VGE= 15 V, IC= 75 A, TJ= 175°C|VCEsat|1.50
−|1.70
1.85|2.00
−|V| |Gate−emitter threshold voltage|VGE= VCE, IC= 350�A|VGE(th)|4.5|5.5|6.5|V| |Collector−emitter cut−off current, gate−
emitter short−circuited|VGE= 0 V, VCE= 600 V
VGE= 0 V, VCE= 600 V, TJ =175°C|ICES|−
−|−
−|0.1
4.0|mA| |Gate leakage current, collector−emitter
short−circuited|VGE= 20 V , VCE= 0 V|IGES|−|−|200|nA| |**DYNAMIC CHARACTERISTIC**||||||| |Input capacitance|VCE= 20 V, VGE= 0 V, f = 1 MHz|Cies|−|7500|−|pF| |Output capacitance||Coes|−|300|−|| |Reverse transfer capacitance||Cres|−|190|−|| |Gate charge total|VCE= 480 V, IC= 75 A, VGE= 15 V|Qg|−|310|−|nC| |Gate to emitter charge||Qge|−|60|−|| |Gate to collector charge||Qgc|−|150|−|| |**SWITCHING CHARACTERISTIC, INDUCTIVE LOAD**||||||| |Turn−on delay time|TJ= 25°C
VCC= 400 V, IC= 75 A
Rg= 10�
VGE= 0 V/ 15 V|td(on)|−|110|−|ns| |Rise time||tr|−|48|−|| |Turn−off delay time||td(off)|−|270|−|| |Fall time||tf|−|70|−|| |Turn−on switching loss||Eon|−|1.5|−|mJ| |Turn−off switching loss||Eoff|−|1.0|−|| |Total switching loss||Ets|−|2.5|−|| |Turn−on delay time|TJ= 150°C
VCC= 400 V, IC= 75 A
Rg= 10�
VGE= 0 V/ 15 V|td(on)|−|100|−|ns| |Rise time||tr|−|50|−|| |Turn−off delay time||td(off)|−|280|−|| |Fall time||tf|−|100|−|| |Turn−on switching loss||Eon|−|1.9|−|mJ| |Turn−off switching loss||Eoff|−|1.8|−|| |Total switching loss||Ets|−|3.7|−|| |**DIODE CHARACTERISTIC**||||||| |Forward voltage|VGE= 0 V, IF= 75 A
VGE= 0 V, IF= 50 A, TJ= 175°C|VF|1.70
−|2.20
2.40|2.90
−|V| |Reverse recovery time|TJ= 25°C
IF= 75 A, VR= 200 V
diF/dt = 200 A/�s|trr|−|80|−|ns| |Reverse recovery charge||Qrr|−|0.40|−|�C| |Reverse recovery current||Irrm|−|8|−|A| Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. **www.onsemi.com** **2** **NGTB75N60SWG** ## **TYPICAL CHARACTERISTICS** **==> picture [494 x 592] intentionally omitted <==** **----- Start of picture text -----**
200 200
180 VGto 13 VE = 20 V T J = 25 ° C 180 VGto 15 VE = 20 V 13 V
160 160
140 140 T J = 150 ° C
120 11 V 120
11 V
100 100
80 10 V 80 10 V
60 60
9 V
40 9 V 40
8 V
20 8 V 20 7 V
7 V
0 0
0 1 2 3 4 5 6 7 8 0 1 2 3 4 5 6 7 8
VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 1. Output Characteristics Figure 2. Output Characteristics
100,000 TJ = 25 ° C 70
60
10,000 C ies
50
1000
40
C oes
30
100
Cres
20
10 TJ = 150 ° C
10
TJ = 25 ° C
1 0
0 10 20 30 40 50 60 70 80 90 100 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
VCE, COLLECTOR−EMITTER VOLTAGE (V) VF, FORWARD VOLTAGE (V)
Figure 3. Typical Capacitance Figure 4. Diode Forward Characteristics
16 6
VCE = 400 V VCE = 400 V
14 VGE = 15 V
5 TJ = 150 ° C
12 Rg = 10 � Eon
4
10
8 3
Eoff
6
2
4
VCE = 400 V 1
2 VGE = 15 V
IC = 75 A
0 0
0 50 100 150 200 250 300 350 15 25 35 45 55 65 75 85 95 105
QG, GATE CHARGE (nC) IC, COLLECTOR CURRENT (A)
, COLLECTOR CURRENT (A) , COLLECTOR CURRENT (A)
IC IC
C, CAPACITANCE (pF)
, FORWARD CURRENT (A)
IF
, GATE−EMITTER VOLTAGE (V) SWITCHING LOSS (mJ)
GE
V
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**Figure 5. Typical Gate Charge** **Figure 6. Switching Loss vs. IC** **www.onsemi.com** **3** **NGTB75N60SWG** ## **TYPICAL CHARACTERISTICS** **==> picture [493 x 387] intentionally omitted <==** **----- Start of picture text -----**
1000 1000
50 � s
td(off) 100
tf 10 dc operation 100 � s
100
td(on) 1 ms
1
tr V CE = 400 V Single NonrepetitivePulse TC = 25 ° C
VGE = 15 V 0.1 Curves must be derated
T J = 150 ° C linearly with increase
Rg = 10 �
in temperature
10 0.01
15 25 35 45 55 65 75 85 95 105 1 10 100 1000
IC, COLLECTOR CURRENT (A) VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 7. Switching Time vs. IC Figure 8. Safe Operating Area
1
R � JC = 0.282
50% Duty Cycle
0.1 20%
10%
5% Junction R 1 R 2 R n Case R i ( ° C/W) C i (J/ ° C)
0.01 2% 0.026955 0.003710
0.024252 0.013039
0.022476 0.044492
0.055395 0.057085
0.001 C1 C2 Cn 0.112157 0.089161
0.040934 0.772537
Duty Factor = t1/t2
Single Pulse Peak T J = P DM x Z � JC + T C
0.0001
0.000001 0.00001 0.0001 0.001 0.01 0.1 1
ON−PULSE WIDTH (s)
SWITCHING TIME (ns)
, COLLECTOR CURRENT (A)
IC
C/W)
°
SQUARE−WAVE PEAK R(t) (
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**Figure 9. IGBT Transient Thermal Impedance** **==> picture [487 x 175] intentionally omitted <==** **----- Start of picture text -----**
1
50% Duty Cycle R � JC = 0.622
20%
0.1 10% R i ( ° C/W) C i (J/ ° C)
0.007983 0.000125
5% Junction R1 R2 Rn Case 0.010584 0.000945
0.011330 0.002791
2%
0.026752 0.003738
0.047379 0.006674
0.01 0.103276 0.009683
Single Pulse C1 C2 Cn 0.061288 0.065591 0.051597 0.152460
Duty Factor = t1/t2 0.1346660.152791 0.2348230.654488
Peak TJ = PDM x Z � JC + TC
0.001
0.000001 0.00001 0.0001 0.001 0.01 0.1 1
ON−PULSE WIDTH (s)
C/W)
°
SQUARE−WAVE PEAK R(t) (
**----- End of picture text -----**
**Figure 10. Diode Transient Thermal Impedance** **www.onsemi.com** **4** **NGTB75N60SWG** ## **PACKAGE DIMENSIONS** **TO−247** CASE 340AL ISSUE A NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. **==> picture [471 x 211] intentionally omitted <==** **----- Start of picture text -----**
NOTE 4 A B SEATINGPLANE 0.635 [M] B A [M] 3.4. SLOT REQUIRED, NOTCH MAY BE ROUNDED.DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH.
E A P NOTE 6 MOLD FLASH SHALL NOT EXCEED 0.13 PER SIDE. THESE
DIMENSIONS ARE MEASURED AT THE OUTERMOST
E2/2 EXTREME OF THE PLASTIC BODY.
5. LEAD FINISH IS UNCONTROLLED IN THE REGION DEFINED BY
E2 Q S 6. L1.∅P SHALL HAVE A MAXIMUM DRAFT ANGLE OF 1.5°
NOTE 4 TOP OF THE PART WITH A MAXIMUM DIAMETER OF 3.91.
D 7. DIMENSION A1 TO BE MEASURED IN THE REGION DEFINED
NOTE 3 BY L1.
4
MILLIMETERS
1 2 3 DIM MIN MAX
fey, A 4.70 5.30
L1 A1 2.20 2.60
b 1.00 1.40
b2 1.65 2.35
L NOTE 5 b4 2.60 3.40
c 0.40 0.80
D 20.30 21.40
E 15.50 16.25
E2 4.32 5.49
2X b2 c e 5.45 BSC
b4 A1 L1LL 19.803.503.50 20.804.504.50
3X b NOTE 7 P 3.55 3.65
it e 0.25 [M] B | A [M] QSS 5.406.15 BSC6.206.15 BSC6.206.20
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5. LEAD FINISH IS UNCONTROLLED IN THE REGION DEFINED BY 6. ∅P SHALL HAVE A MAXIMUM DRAFT ANGLE OF 1.5°P SHALL HAVE A MAXIMUM DRAFT ANGLE OF 1.5°° TO THE TOP OF THE PART WITH A MAXIMUM DIAMETER OF 3.91. **==> picture [151 x 137] intentionally omitted <==** **----- Start of picture text -----**
7. DIMENSION A1 TO BE MEASURED IN THE REGION DEFINED
BY L1.
MILLIMETERS
DIM MIN MAX
A 4.70 5.30
A1 2.20 2.60
b 1.00 1.40
b2 1.65 2.35
b4 2.60 3.40
c 0.40 0.80
D 20.30 21.40
E 15.50 16.25
E2 4.32 5.49
e 5.45 BSC
L1LL 19.803.503.50 20.804.504.50
P 3.55 3.65
QSS 5.406.15 BSC6.206.15 BSC6.206.20
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