# IGBT, 100 A, 1.65 V, 223 W, 600 V, TO-247, 3 Pins ![Product image](https://novapart.co/image/farnell:2321651/) **URL**: https://novapart.co/products/NGTB50N60FLWG/igbt-100-a-165-v-223-w-600-to-247-3-pins **SKU**: NGTB50N60FLWG **Manufacturer**: ONSEMI **Category**: Semiconductors - Discretes || IGBTs || Single IGBTs **Price**: €2.1100 **Stock**: 10+ ## Description DC Collector Current:100A; Collector Emitter Saturation Voltage Vce(on):1.65V; Power Dissipation Pd:223W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-247; No. of Pins:3Pin ## Specifications | Parameter | Value | |---|---| | No. Of Pins | 3Pins | | Product Range | - | | Power Dissipation | 223W | | Transistor Mounting | Through Hole | | Transistor Case Style | TO-247 | | Operating Temperature Max | 150°C | | Continuous Collector Current | 100A | | Collector Emitter Voltage Max | 600V | | Collector Emitter Saturation Voltage | 1.65V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:2321651/) ## NGTB50N60FLWG ## IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. ## **Features** **http://onsemi.com** - Low Saturation Voltage using Trench with Field Stop Technology - Low Switching Loss Reduces System Power Dissipation - Soft Fast Reverse Recovery Diode - Optimized for High Speed Switching **50 A, 600 V VCEsat = 1.65 V EOFF = 0.6 mJ** - 5 s Short−Circuit Capability • These are Pb−Free Devices C **Typical Applications** • Solar Inverters • Uninterruptible Power Supplies (UPS) G **ABSOLUTE MAXIMUM RATINGS** E **Rating Symbol Value Unit** Collector−emitter voltage VCES 600 V Collector current IC A @ TC = 25 ° C 100 @ TC = 100 ° C 50 Diode Forward Current IF A G **TO−247** ~~a~~ @ T@ TCC = 25 = 100 ° C ° C 10050 C E **CASE 340LSTYLE 4** Diode Pulsed Current IFM 200 A TPULSE Limited by TJ Max ~~ee ee~~ Pulsed collector current, Tpulse ICM 200 A **MARKING DIAGRAM** limited by TJmax ~~a~~ Short−circuit withstand time tSC 5 s VGE = 15 V, VCE = 300 V, TJ ≤ +150 ° C ~~ee~~ Gate−emitter voltage VGE 20 V 50N60FL V AYWWG Transient gate−emitter voltage 30 (TPULSE = 5 s, D < 0.10) ~~ere oe~~ Power Dissipation PD W @ TC = 25 ° C 223 @ TC = 100 ° C 89 ~~a Oe | |~~ Operating junction temperature TJ −55 to +150 ° C range A = Assembly Location ~~eeee~~ Storage temperature range ~~es~~ T ~~ee~~ stg −55 to +150 ~~eeee~~ ° C YWW Uy = Work Week= Year Lead temperature for soldering, 1/8” TSLD 260 ° C G = Pb−Free Package from case for 5 seconds ~~ee ee ee~~ Stresses exceeding Maximum Ratings may damage the device. Maximum **ORDERING INFORMATION** Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the **Device Package Shipping** Recommended Operating Conditions may affect device reliability. NGTB50N60FLWG TO−247 30 Units / Rail (Pb−Free) ~~TIE~~ Publication Order Number: **NGTB50N60FLW/D** **1** © Semiconductor Components Industries, LLC, 2013 **January, 2013 − Rev. 1** **NGTB50N60FLWG** ## **THERMAL CHARACTERISTICS** |**THERMAL CHARACTERISTICS**|||| |---|---|---|---| |**Rating**|**Symbol**|**Value**|**Unit**| |Thermal resistance junction−to−case, for IGBT|R�JC|0.56|°C/W| |Thermal resistance junction−to−case, for Diode|R�JC|0.74|°C/W| |Thermal resistance junction−to−ambient|R�JA|40|°C/W| **ELECTRICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise specified) |**Parameter**|**Test Conditions**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**| |---|---|---|---|---|---|---| |**STATIC CHARACTERISTIC**||||||| |Collector−emitter breakdown voltage,
gate−emitter short−circuited|VGE=0 V, IC= 500�A|V(BR)CES|600|−|−|V| |Collector−emitter saturation voltage|VGE= 15 V, IC= 50 A
VGE= 15 V, IC= 50 A, TJ= 150°C|VCEsat|1.40
−|1.65
1.85|1.90
−|V| |Gate−emitter threshold voltage|VGE= VCE, IC= 350�A|VGE(th)|4.5|5.5|6.5|V| |Collector−emitter cut−off current, gate−
emitter short−circuited|VGE= 0 V, VCE= 600 V
VGE= 0 V, VCE= 600 V, TJ =150°C|ICES|−
−|−
−|0.5
2|mA| |Gate leakage current, collector−emitter
short−circuited|VGE= 20 V , VCE= 0 V|IGES|−|−|200|nA| |**DYNAMIC CHARACTERISTIC**||||||| |Input capacitance|VCE= 20 V, VGE= 0 V, f = 1 MHz|Cies|−|7500|−|pF| |Output capacitance||Coes|−|300|−|| |Reverse transfer capacitance||Cres|−|190|−|| |Gate charge total|VCE= 480 V, IC= 50 A, VGE= 15 V|Qg|−|310|−|nC| |Gate to emitter charge||Qge|−|60|−|| |Gate to collector charge||Qgc|−|150|−|| |**SWITCHING CHARACTERISTIC, INDUCTIVE LOAD**||||||| |Turn−on delay time|TJ= 25°C
VCC= 400 V, IC= 50 A
Rg= 10�
VGE= 0 V/ 15 V|td(on)|−|116|−|ns| |Rise time||tr|−|43|−|| |Turn−off delay time||td(off)|−|292|−|| |Fall time||tf|−|78|−|| |Turn−on switching loss||Eon|−|1.1|−|mJ| |Turn−off switching loss||Eoff|−|0.6|−|| |Total switching loss||Ets|−|1.7|−|| |Turn−on delay time|TJ= 150°C
VCC= 400 V, IC= 50 A
Rg= 10�
VGE= 0 V/ 15 V|td(on)|−|110|−|ns| |Rise time||tr|−|45|−|| |Turn−off delay time||td(off)|−|300|−|| |Fall time||tf|−|105|−|| |Turn−on switching loss||Eon|−|1.4|−|mJ| |Turn−off switching loss||Eoff|−|1.1|−|| |Total switching loss||Ets|−|2.5|−|| |**DIODE CHARACTERISTIC**||||||| |Forward voltage|VGE= 0 V, IF= 50 A
VGE= 0 V, IF= 50 A, TJ= 150°C|VF|1.55
−|1.85
1.85|2.1
−|V| |Reverse recovery time|TJ= 25°C
IF= 50 A, VR= 200 V
diF/dt = 200 A/�s|trr|−|85|−|ns| |Reverse recovery charge||Qrr|−|0.40|−|�C| |Reverse recovery current||Irrm|−|8|−|A| **http://onsemi.com** **2** **NGTB50N60FLWG** ## **TYPICAL CHARACTERISTICS** **==> picture [239 x 170] intentionally omitted <==** **----- Start of picture text -----**
250
TJ = 25 ° C
VGE = 17 V to 13 V
200
11 V
150
10 V
100
9 V
50
7 V
8 V
0
0 1 2 3 4 5 6 7 8
VCE, COLLECTOR−EMITTER VOLTAGE (V)
, COLLECTOR CURRENT (A)
IC
**----- End of picture text -----**
**Figure 1. Output Characteristics** **==> picture [238 x 170] intentionally omitted <==** **----- Start of picture text -----**
300
TJ = 150 ° C VGE = 17 V to 13 V
250
200
150 11 V
10 V
100
9 V
50
8 V
7 V
0
0 1 2 3 4 5 6 7 8
VCE, COLLECTOR−EMITTER VOLTAGE (V)
, COLLECTOR CURRENT (A)
IC
**----- End of picture text -----**
**Figure 2. Output Characteristics** **==> picture [492 x 396] intentionally omitted <==** **----- Start of picture text -----**
250 200
TJ = −55 ° C
180
VGE = 17 V to 13 V
200 160 TJ = 25 ° C T J = 150 ° C
11 V 140
150 120
100
10 V
100 80
60
50 7 V 40
9 V
20
8 V
0 0
0 1 2 3 4 5 6 7 8 0 4 8 12 16
VCE, COLLECTOR−EMITTER VOLTAGE (V) VGE, GATE−EMITTER VOLTAGE (V)
Figure 3. Output Characteristics Figure 4. Typical Transfer Characteristics
3.00 100000
IC = 100 A
2.50
10000 Cies
2.00
IC = 50 A
1.50 IC = 25 A 1000
1.00 IC = 5 A Coes
100
0.50 Cres
0.00 10
−75 −25 25 75 125 175 0 10 20 30 40 50 60 70 80 90 100
TJ, JUNCTION TEMPERATURE ( ° C) VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 5. VCE(sat) vs. TJ Figure 6. Typical Capacitance
, COLLECTOR CURRENT (A) , COLLECTOR CURRENT (A)
IC IC
VOLTAGE (V)
, COLLECTOR−EMITTER CAPACITANCE (pF)
CE
V
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**http://onsemi.com** **3** **NGTB50N60FLWG** ## **TYPICAL CHARACTERISTICS** **==> picture [237 x 170] intentionally omitted <==** **----- Start of picture text -----**
120
100
TJ = 25 ° C
80
TJ = 150 ° C
60
40
20
0
0 0.5 1 1.5 2 2.5 3 3.5
VF, FORWARD VOLTAGE (V)
, FORWARD CURRENT (A)
IF
**----- End of picture text -----**
**Figure 7. Diode Forward Characteristics** **==> picture [242 x 170] intentionally omitted <==** **----- Start of picture text -----**
20
15 VCE = 480 V
10
5
0
0 50 100 150 200 250 300 350
QG, GATE CHARGE (nC)
, GATE−EMITTER VOLTAGE (V)
GE
V
**----- End of picture text -----**
**Figure 8. Typical Gate Charge** **==> picture [493 x 170] intentionally omitted <==** **----- Start of picture text -----**
1.6 1000
1.4
td(off)
Eon
1.2
td(on)
100
1 tf
Eoff
0.8 tr
0.6
10
0.4 VCE = 400 V VCE = 400 V
VGE = 15 V VGE = 15 V
0.2 I C = 50 A IC = 50 A
Rg = 10 � Rg = 10 �
0 1
0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160
TJ, JUNCTION TEMPERATURE ( ° C) TJ, JUNCTION TEMPERATURE ( ° C)
SWITCHING LOSS (mJ) SWITCHING TIME (ns)
**----- End of picture text -----**
**Figure 9. Switching Loss vs. Temperature** **Figure 10. Switching Time vs. Temperature** **==> picture [493 x 170] intentionally omitted <==** **----- Start of picture text -----**
4.5 1000
VCE = 400 V
4 VGE = 15 V td(off)
3.5 TRJg = 150 = 10 °� C Eon tf
3 100
td(on)
2.5
Eoff
2
tr
1.5 10
VCE = 400 V
1 VGE = 15 V
0.5 TJ = 150 ° C
Rg = 10 �
0 1
8 20 32 44 56 68 80 92 104 8 20 32 44 56 68 80 92 104
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
SWITCHING LOSS (mJ) SWITCHING TIME (ns)
**----- End of picture text -----**
**Figure 11. Switching Loss vs. IC** **Figure 12. Switching Time vs. IC** **http://onsemi.com** **4** **NGTB50N60FLWG** ## **TYPICAL CHARACTERISTICS** **==> picture [489 x 170] intentionally omitted <==** **----- Start of picture text -----**
7 10000
VCE = 400 V
65 VTI JGE C = 150 = 50 A = 15 V ° C Eon 1000 td(off)
td(on)
4
100
3 E off tf
tr
2
10 VCE = 400 V
VGE = 15 V
1
IC = 50 A
TJ = 150 ° C
0 1
5 15 25 35 45 55 65 75 85 5 15 25 35 45 55 65 75 85
RG, GATE RESISTOR ( � ) RG, GATE RESISTOR ( � )
SWITCHING LOSS (mJ) SWITCHING TIME (ns)
**----- End of picture text -----**
**Figure 13. Switching Loss vs. RG** **Figure 14. Switching Time vs. RG** **==> picture [491 x 170] intentionally omitted <==** **----- Start of picture text -----**
3 1000
VGE = 15 V
IC = 50 A td(off)
2.4 Rg = 10 �
TJ = 150 ° C Eon td(on)
100
1.8 tf
Eoff tr
1.2
10
VGE = 15 V
0.6 IC = 50 A
Rg = 10 �
TJ = 150 ° C
0 1
175 225 275 325 375 425 475 525 575 175 225 275 325 375 425 475 525 575
VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V)
SWITCHING LOSS (mJ) SWITCHING TIME (ns)
**----- End of picture text -----**
**Figure 15. Switching Loss vs. VCE** **Figure 16. Switching Time vs. VCE** **==> picture [243 x 170] intentionally omitted <==** **----- Start of picture text -----**
1000
50 � s
100 100 � s
1 ms
10 dc operation
1
Single Nonrepetitive
Pulse TC = 25 ° C
0.1 Curves must be derated
linearly with increase
in temperature
0.01
1 10 100 1000
VCE, COLLECTOR−EMITTER VOLTAGE (V)
, COLLECTOR CURRENT (A)
IC
**----- End of picture text -----**
**Figure 17. Safe Operating Area** **==> picture [244 x 170] intentionally omitted <==** **----- Start of picture text -----**
1000
100
10
VGE = 15 V, TC = 125 ° C
1
1 10 100 1000
VCE, COLLECTOR−EMITTER VOLTAGE (V)
, COLLECTOR CURRENT (A)
IC
**----- End of picture text -----**
**Figure 18. Reverse Bias Safe Operating Area** **http://onsemi.com** **5** **NGTB50N60FLWG** ## **TYPICAL CHARACTERISTICS** **==> picture [252 x 174] intentionally omitted <==** **----- Start of picture text -----**
250
200 80 ° C
150 80 ° C 110 ° C
100 110 ° C
VCE = 400 V, TJ ≤ 150 ° C
50 Rgate = 10 W, VGE = 0/15 V,
Tcase = 80 or 110 ° C
(as noted), D = 0.5
0
0.01 0.1 1 10 100 1000
FREQUENCY (kHz)
Ipk (A)
**----- End of picture text -----**
**Figure 19. Collector Current vs. Switching Frequency** **==> picture [491 x 371] intentionally omitted <==** **----- Start of picture text -----**
1
50% Duty Cycle R � JC = 0.56
20%
0.1 10% Ri ( ° C/W) � i (sec)
5% Junction R1 R2 Rn Case 0.050410.02087 5.48E−51.0E−4
0.07919 0.002
2% Ci = � i/Ri 0.11425 0.03
0.01 1% 0.19393 0.1
C1 C2 Cn 0.09951 2.0
Single Pulse Duty Factor = t1/t2
Peak T J = P DM x Z � JC + T C
0.001
0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
PULSE TIME (sec)
Figure 20. IGBT Transient Thermal Impedance
1
50% Duty Cycle R � JC = 0.74
20%
0.1 10%
5% Junction R1 R2 Rn Case Ri ( ° C/W) � i (sec)
0.07958 4.89E−4
2% Ci = � i/Ri 0.13798 0.002
0.18744 0.03
0.01 1% 0.23523 0.1
C1 C2 Cn 0.09951 2.0
Duty Factor = t1/t2
Single Pulse Peak T J = P DM x Z � JC + T C
0.001
0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
PULSE TIME (sec)
C/W)
°
R(t) (
C/W)
°
R(t) (
**----- End of picture text -----**
**Figure 21. Diode Transient Thermal Impedance** **http://onsemi.com** **6** **NGTB50N60FLWG** **Figure 22. Test Circuit for Switching Characteristics** **http://onsemi.com 7** **NGTB50N60FLWG** **Figure 23. Definition of Turn On Waveform** **http://onsemi.com** **8** **NGTB50N60FLWG** **Figure 24. Definition of Turn Off Waveform** **http://onsemi.com** **9** **NGTB50N60FLWG** ## **PACKAGE DIMENSIONS** **TO−247** CASE 340L−02 ISSUE F **==> picture [448 x 211] intentionally omitted <==** **----- Start of picture text -----**
−T− NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
C Y14.5M, 1982.
− B− 2. CONTROLLING DIMENSION: MILLIMETER.
E
MILLIMETERS INCHES
U L DIMA 20.32 MIN 21.08 MAX 0.800 MIN MAX 8.30
N 4 B 15.75 16.26 0.620 0.640
C 4.70 5.30 0.185 0.209
A −Q− DE 1.001.90 1.402.60 0.0400.075 0.0550.102
1 2 3 _ 0.63 (0.025) [M] T B M F 1.65 2.13 0.065 0.084
G 5.45 BSC 0.215 BSC
H 1.50 2.49 0.059 0.098
P J 0.40 0.80 0.016 0.031
−Y− K 19.81 20.83 0.780 0.820
L 5.40 6.20 0.212 0.244
K N 4.32 5.49 0.170 0.216
P --- 4.50 --- 0.177
Q 3.55 3.65 0.140 0.144
U 6.15 BSC 0.242 BSC
W 2.87 3.12 0.113 0.123
W J
F 2 PL H STYLE 4:PIN 1. GATE
tt G : === 2. COLLECTOR
I D 3 PL | 3. EMITTER
4. COLLECTOR
0.25 (0.010) [M] Y Q S
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