# IGBT, 100 A, 2.2 V, 535 W, 1.2 kV, TO-247, 3 Pins ![Product image](https://novapart.co/image/farnell:2399116/) **URL**: https://novapart.co/products/NGTB50N120FL2WG/igbt-100-a-22-v-535-w-12-kv-to-247-3-pins **SKU**: NGTB50N120FL2WG **Manufacturer**: ONSEMI **Category**: Semiconductors - Discretes || IGBTs || Single IGBTs **Price**: €9.1100 **Stock**: 10+ ## Description DC Collector Current:100A; Collector Emitter Saturation Voltage Vce(on):2.2V; Power Dissipation Pd:535W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:TO-247; No. ## Specifications | Parameter | Value | |---|---| | Msl | - | | Svhc | No SVHC (10-Jun-2022) | | No. Of Pins | 3Pins | | Product Range | - | | Power Dissipation | 535W | | Transistor Mounting | Through Hole | | Transistor Case Style | TO-247 | | Operating Temperature Max | 175°C | | Continuous Collector Current | 100A | | Collector Emitter Voltage Max | 1.2kV | | Collector Emitter Saturation Voltage | 2.2V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:2399116/) ## NGTB50N120FL2WG ## IGBT - Field Stop II This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft and fast co−packaged free wheeling diode with a low forward voltage. ## **Features** - Extremely Efficient Trench with Field Stop Technology - TJmax = 175°C - Soft Fast Reverse Recovery Diode **www.onsemi.com** **==> picture [84 x 44] intentionally omitted <==** **----- Start of picture text -----**
50 A, 1200 V
VCEsat = 2.20 V
Eoff = 1.40 mJ
**----- End of picture text -----**
- Optimized for High Speed Switching - 10 s Short Circuit Capability - These are Pb−Free Devices ## **Typical Applications** - Solar Inverter - Uninterruptible Power Inverter Supplies (UPS) - Welding ## **ABSOLUTE MAXIMUM RATINGS** |**ABSOLUTE MAXIMUM RATINGS**|||| |---|---|---|---| |**Rating**|**Symbol**|**Value**|**Unit**| |Collector−emitter voltage|VCES|1200|V| |Collector current
@ TC= 25°C
@ TC= 100°C
~~——-}—-~~|IC
~~——-}—-~~|100
50
~~——-}—-~~|A
~~——-}—-~~| |Pulsed collector current, Tpulse
limited by TJmax
~~——-}—-~~
~~eo~~|ICM
~~——-}—-~~|200
~~——-}—-~~|A
~~——-}—-~~| |Diode forward current
@ TC= 25°C
@ TC= 100°C
~~eo~~|IF|100
50|A| |Diode pulsed current, Tpulselimited
by TJmax
~~eo~~
~~EE~~|IFM
~~EE~~|200
~~EE~~|A
~~EE~~| |Gate−emitter voltage
Transient gate−emitter voltage
(Tpulse= 5 s, D < 0.10)
~~EE~~|VGE
~~EE~~|20
±30
~~EE~~|V
~~EE~~| |Power Dissipation
@ TC= 25°C
@ TC= 100°C|PD|535
267|W| |Short Circuit Withstand Time
VGE= 15 V, VCE= 500 V, TJ ≤150°C|TSC|10|s| |Operating junction temperature
range
~~EEE~~|TJ
~~EEE~~|−55 to +175
~~EEE~~|°C
~~EEE~~| |Storage temperature range
~~EEE~~|Tstg
~~EEE~~|−55 to +175
~~EEE~~|°C
~~EEE~~| |Lead temperature for soldering, 1/8”
from case for 5 seconds
~~ee~~|TSLD
~~ee~~|260
~~ee~~|°C
~~ee ~~| Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. **==> picture [192 x 461] intentionally omitted <==** **----- Start of picture text -----**
C
G
E
G TO−247
C
E CASE 340AL
MARKING DIAGRAM —
50N120FL2
AYWWG
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
ORDERING INFORMATION
Device Package Shipping
NGTB50N120FL2WG TO−247 30 Units / Rail
(Pb−Free)
en
**----- End of picture text -----**
Publication Order Number: **NGTB50N120FL2W/D** **1** © Semiconductor Components Industries, LLC, 2015 **May, 2015 − Rev. 5** **NGTB50N120FL2WG** ## **THERMAL CHARACTERISTICS** |**THERMAL CHARACTERISTICS**|**THERMAL CHARACTERISTICS**|||||| |---|---|---|---|---|---|---| |**Rating**||**Symbol**||**Value**||**Unit**| |Thermal resistance junction−to−case, for IGBT||R�JC||0.28||°C/W| |Thermal resistance junction−to−case, for Diode||R�JC||0.5||°C/W| |Thermal resistance junction−to−ambient||R�JA||40||°C/W| |**ELECTRICAL CHARACTERISTICS**(TJ= 25°C unless otherwise specified)||||||| |**Parameter**|**Test Conditions**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**| |**STATIC CHARACTERISTIC**||||||| |Collector−emitter breakdown voltage,
gate−emitter short−circuited|VGE= 0 V, IC= 500�A|V(BR)CES|1200|−|−|V| |Collector−emitter saturation voltage|VGE= 15 V, IC= 50 A
VGE= 15 V, IC= 50 A, TJ= 175°C|VCEsat|−
−|2.20
2.60|2.40
−|V| |Gate−emitter threshold voltage|VGE= VCE, IC= 400�A|VGE(th)|4.5|5.5|6.5|V| |Collector−emitter cut−off current, gate−
emitter short−circuited|VGE= 0 V, VCE= 1200 V
VGE= 0 V, VCE= 1200 V, TJ =175°C|ICES|−
−|−
−|0.1
2.0|mA| |Gate leakage current, collector−emitter
short−circuited|VGE= 20 V , VCE= 0 V|IGES|−|−|200|nA| |||||||| |Input capacitance|VCE= 20 V, VGE= 0 V, f = 1 MHz|Cies|−|7383|−|pF| |Output capacitance||Coes|−|233|−|| |Reverse transfer capacitance||Cres|−|139|−|| |Gate charge total|VCE= 600 V, IC= 50 A, VGE= 15 V|Qg|−|311|−|nC| |Gate to emitter charge||Qge|−|64|−|| |Gate to collector charge||Qgc|−|155|−|| |**SWITCHING CHARACTERISTIC, INDUCTIVE LOAD**||||||| |Turn−on delay time|TJ= 25°C
VCC= 600 V, IC= 50 A
Rg= 10�
VGE= 0 V/ 15V|td(on)|−|118|−|ns| |Rise time||tr|−|48|−|| |Turn−off delay time||td(off)|−|282|−|| |Fall time||tf|−|113|−|| |Turn−on switching loss||Eon|−|4.40|−|mJ| |Turn−off switching loss||Eoff|−|1.40|−|| |Total switching loss||Ets|−|5.80|−|| |Turn−on delay time|TJ= 175°C
VCC= 600 V, IC= 50 A
Rg= 10�
VGE= 0 V/ 15V|td(on)|−|114|−|ns| |Rise time||tr|−|49|−|| |Turn−off delay time||td(off)|−|298|−|| |Fall time||tf|−|243|−|| |Turn−on switching loss||Eon|−|5.65|−|mJ| |Turn−off switching loss||Eoff|−|3.26|−|| |Total switching loss||Ets|−|8.91|−|| |**DIODE CHARACTERISTIC**||||||| |Forward voltage|VGE= 0 V, IF= 50 A
VGE= 0 V, IF= 50 A, TJ= 175°C|VF|−
−|2.00
2.55|2.60
−|V| |Reverse recovery time|TJ= 25°C
IF= 50 A, VR= 400 V
diF/dt = 200 A/�s|trr|−|256|−|ns| |Reverse recovery charge||Qrr|−|2.7|−|�c| |Reverse recovery current||Irrm|−|19|−|A| |Reverse recovery time|TJ= 175°C
IF= 40 A, VR= 400 V
diF/dt = 200 A/�s|trr|−|400|−|ns| |Reverse recovery charge||Qrr|−|5.75|−|�c| |Reverse recovery current||Irrm|−|27|−|A| Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. **www.onsemi.com** **2** **NGTB50N120FL2WG** ## **TYPICAL CHARACTERISTICS** **==> picture [491 x 592] intentionally omitted <==** **----- Start of picture text -----**
200 200
180 TJ = 25 ° C 180 TJ = 150 ° C
160 160 VGE = 20 V
VGE = 20 V to 13 V
140 to 13 V 140
120 120
100 11 V 100
11 V
80 80
60 10 V 60 10 V
9 V
40 40
9 V
20 20 8 V
7 V 8 V
7 V
0 0
0 1 2 3 4 5 6 7 8 1 2 3 4 5 6 7 8
VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 1. Output Characteristics Figure 2. Output Characteristics
200 200
180 VGE = 20 V TJ = −55 ° C 180
to 13 V
160 160
140 140
120 120
11 V
100 100
80 80
60 10 V 60
40 7 V 40 TJ = 150 ° C
20 9 V 20 °
TJ = 25 C
0 8 V 0
0 1 2 3 4 5 6 7 8 0 1 2 3 4 5 6 7 8 9 10 11 12 13
VCE, COLLECTOR−EMITTER VOLTAGE (V) VGE, GATE−EMITTER VOLTAGE (V)
Figure 3. Output Characteristics Figure 4. Typical Transfer Characteristics
4.50 100000
4.00
I C = 100 A
3.50 10000 Cies
3.00
IC = 50 A
1000
2.50
2.00 IC = 25 A Coes
100
1.50 Cres
1.00 10
0.50 TJ = 25 ° C
0.00 1
−75 −50 −25 0 25 50 75 100 125 150 175 200 0 10 20 30 40 50 60 70 80 90 100
TJ, JUNCTION TEMPERATURE ( ° C) VCE, COLLECTOR−EMITTER VOLTAGE (V)
, COLLECTOR CURRENT (A) , COLLECTOR CURRENT (A)
IC IC
, COLLECTOR CURRENT (A) , COLLECTOR CURRENT (A)
IC IC
C, CAPACITANCE (pF)
, COLLECTOR−EMITTER VOLTAGE (V)
CE
V
**----- End of picture text -----**
**Figure 5. VCE(sat) vs TJ** **Figure 6. Typical Capacitance** **www.onsemi.com** **3** **NGTB50N120FL2WG** ## **TYPICAL CHARACTERISTICS** **==> picture [492 x 592] intentionally omitted <==** **----- Start of picture text -----**
70 16
60 14
50 TJ = 25 ° C 12 VCE = 600 V
10
40 T J = 150 ° C
8
30
6
20
4
VCE = 600 V
10
2 VGE = 15 V
IC = 50 A
0 0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 50 100 150 200 250 300 350
VF, FORWARD VOLTAGE (V) QG, GATE CHARGE (nC)
Figure 7. Diode Forward Characteristics Figure 8. Typical Gate Charge
6 1000
5 Eon
td(off)
4
tf
3 100 td(on)
Eoff
2 tr
VCE = 600 V VCE = 600 V
1 VGE = 15 V VGE = 15 V
IC = 50 A IC = 50 A
Rg = 10 � Rg = 10 �
0 10
0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160
TJ, JUNCTION TEMPERATURE ( ° C) TJ, JUNCTION TEMPERATURE ( ° C)
Figure 9. Switching Loss vs. Temperature Figure 10. Switching Time vs. Temperature
12 1000
VCE = 600 V
108 VTRg = 10 J GE = 150= 15 V �° C Eon td(off)
tf
td(on)
6 100
4 Eoff
tr VCE = 600 V
2 VGE = 15 V
IC = 50 A
Rg = 10 �
0 10
5 15 25 35 45 55 65 75 85 5 15 25 35 45 55 65 75 85
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
, FORWARD CURRENT (A)
IF , GATE−EMITTER VOLTAGE (V)GE
V
SWITCHING TIME (ns)
SWITCHING LOSS (mJ)
SWITCHING TIME (ns)
SWITCHING LOSS (mJ)
**----- End of picture text -----**
**Figure 11. Switching Loss vs. IC** **Figure 12. Switching Time vs. IC** **www.onsemi.com** **4** **NGTB50N120FL2WG** ## **TYPICAL CHARACTERISTICS** **==> picture [492 x 601] intentionally omitted <==** **----- Start of picture text -----**
18 10000
16 VCE = 600 V VCE = 600 V
VGE = 15 V VGE = 15 V
14 TJ = 150 ° C TJ = 150 ° C
12 IC = 50 A Eon 1000 IC = 50 A td(off)
10 td(on)
8 tf
6 100
Eoff
4
tr
2
0 10
5 15 25 35 45 55 65 75 85 5 15 25 35 45 55 65 75 85
Rg, GATE RESISTOR ( � ) Rg, GATE RESISTOR ( � )
Figure 13. Switching Loss vs. Rg Figure 14. Switching Time vs. Rg
9 1000
8
7 td(off)
6 Eon
tf
5 td(on)
100
4
3 Eoff tr
2 VGE = 15 V VGE = 15 V
TJ = 150 ° C TJ = 150 ° C
1 IC = 50 A IC = 50 A
0 Rg = 10 � 10 Rg = 10 �
350 400 450 500 550 600 650 700 750 800 350 400 450 500 550 600 650 700 750 800
VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 15. Switching Loss vs. VCE Figure 16. Switching Time vs. VCE
1000 1000
100
100
dc operation
10 50 � s
100 � s
Single Nonrepetitive 10
1 Pulse TC = 25 ° C 1 ms
Curves must be derated
linearly with increase
in temperature VGE = 15 V, TC = 125 ° C
0.1 1
1 10 100 1000 10000 1 10 100 1000 10000
VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V)
SWITCHING LOSS (mJ) SWITCHING TIME (ns)
SWITCHING LOSS (mJ) SWITCHING TIME (ns)
, COLLECTOR CURRENT (A) , COLLECTOR CURRENT (A)
IC IC
**----- End of picture text -----**
**Figure 17. Safe Operating Area** **Figure 18. Reverse Bias Safe Operating Area** **www.onsemi.com** **5** **NGTB50N120FL2WG** ## **TYPICAL CHARACTERISTICS** **==> picture [492 x 595] intentionally omitted <==** **----- Start of picture text -----**
450 7
400
pf | | | | } * 6 T J = 175 ° C, I F = 50 A
350 i a TJ = 175 ee ° C, IF e = 50 A e
300
Ne eee 5
250 PNON]
4
200 pO OE
TJ = 25 ° C, IF = 50 A TJ = 25 ° C, IF = 50 A
150 aee ee
3
ee
100
50 2
pF | |
100 300 500 700 900 1100 1300 100 300 500 700 900 1100 1300
diF/dt, DIODE CURRENT SLOPE (A/ u ) diF/dt, DIODE CURRENT SLOPE (A/ u )
Figure 19. trr vs. diF/dt (VR = 400 V) Figure 20. Qrr vs. diF/dt (VR = 400 V)
70 3.5
60 PPEE 3.0 EEE IF = 75 A
TJ = 175 ° C, IF = 50 A
50
tae IF EE = 50 A
2.5
40 Te ert
2.0
30 4 aa eeegeen IF = 25 A
TJ = 25 ° C, IF = 50 A
= poe ee
1.5
20
10 1.0
100 300 500 700 900 1100 1300 −75 −50 −25 0 25 50 75 100 125 150 175 200
diF/dt, DIODE CURRENT SLOPE (A/ u ) TJ, JUNCTION TEMPERATURE ( ° C)
Figure 21. Irm vs. diF/dt (VR = 400 V) Figure 22. VF vs. TJ
250
VCE = 600 V, RG = 10 VGE = 0/15 V
TC = 80 ° C
200 Se HmEHC ORIA III
COTS ol
COI N
150
COME re rn TAIN AT UT
PProCorr
100 reTUTEWAN CT U
NAN UT
TT T TC = 110 ° C SN
50
AL] ATI
ey TTI
0 “tye CUUTNICTCTIE
0.01 0.1 1 10 100 SSS 1000
FREQUENCY (kHz)
C)
, REVERSE RECOVERY TIME (ns)
trr , REVERSE RECOVERY CHARGE (
rr
Q
, FORWARD VOLTAGE (V)
F
V
, REVERSE RECOVERY CURRENT (A)
Irm
Ipk (A)
**----- End of picture text -----**
**Figure 23. Collector Current vs. Switching Frequency** **www.onsemi.com** **6** **NGTB50N120FL2WG** ## **TYPICAL CHARACTERISTICS** **==> picture [490 x 389] intentionally omitted <==** **----- Start of picture text -----**
1
R � JC = 0.28
50% Duty Cycle
0.1 20%
10%
5% Junction R 1 R 2 R n Case R i ( ° C/W) C i (J/ ° C)
0.01 0.048747 0.006487
2%
0.043252 0.023120
0.051703 0.061163
0.107932 0.092651
0.001 C1 C2 Cn 0.025253 1.252250
Duty Factor = t1/t2
Single Pulse Peak T J = P DM x Z � JC + T C
0.0001
1E−06 1E−05 0.0001 0.001 0.01 0.1 1
ON−PULSE WIDTH (s)
Figure 24. IGBT Transient Thermal Impedance
1
R � JC = 0.50
50% Duty Cycle
20%
0.1
10%
5% Junction R1 R2 Rn Case 0.007703R i ( ° C/W) 0.000130C i (J/ ° C)
2% 0.010613 0.000942
0.010097 0.003132
0.01 0.032329 0.003093
Single Pulse C1 C2 Cn 0.0467910.044179 0.0067580.022635
0.083870 0.119232
Duty Factor = t1/t2 0.044938 0.703706
Peak TJ = PDM x Z � JC + TC 0.217376 0.460033
0.001
1E−06 1E−05 0.0001 0.001 0.01 0.1 1
ON−PULSE WIDTH (s)
C/W)
°
SQUARE−WAVE PEAK R(t) (
C/W)
°
SQUARE−WAVE PEAK R(t) (
**----- End of picture text -----**
**Figure 25. Diode Transient Thermal Impedance** **www.onsemi.com** **7** **NGTB50N120FL2WG** ## **PACKAGE DIMENSIONS** **TO−247** CASE 340AL ISSUE A NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. **==> picture [483 x 198] intentionally omitted <==** **----- Start of picture text -----**
NOTE 4 A B SEATINGPLANE 0.635 [M] B A [M] 3.4. SLOT REQUIRED, NOTCH MAY BE ROUNDED.DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH.
E A P NOTE 6 MOLD FLASH SHALL NOT EXCEED 0.13 PER SIDE. THESE
DIMENSIONS ARE MEASURED AT THE OUTERMOST
E2/2 EXTREME OF THE PLASTIC BODY.
5. LEAD FINISH IS UNCONTROLLED IN THE REGION DEFINED BY
E2 Q S 6. L1.∅P SHALL HAVE A MAXIMUM DRAFT ANGLE OF 1.5° TO THE
NOTE 4 TOP OF THE PART WITH A MAXIMUM DIAMETER OF 3.91.
D 7. DIMENSION A1 TO BE MEASURED IN THE REGION DEFINED
NOTE 3 BY L1.
4
MILLIMETERS
1 2 3 DIM MIN MAX
fey, A 4.70 5.30
L1 A1 2.20 2.60
b 1.00 1.40
b2 1.65 2.35
L NOTE 5 b4 2.60 3.40
c 0.40 0.80
D 20.30 21.40
E 15.50 16.25
E2 4.32 5.49
2X b2 c e 5.45 BSC
b4 A1 L1L 19.803.50 20.804.50
3X b NOTE 7 P 3.55 3.65
T e 0.25 [M] B A [M] QS 5.406.15 BSC6.20
**----- End of picture text -----**
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