# IGBT, 160 A, 1.55 V, 454 W, 1.2 kV, TO-247, 3 Pins ![Product image](https://novapart.co/image/farnell:2627929/) **URL**: https://novapart.co/products/NGTB40N120L3WG/igbt-160-a-155-v-454-w-12-kv-to-247-3-pins **SKU**: NGTB40N120L3WG **Manufacturer**: ONSEMI **Category**: Semiconductors - Discretes || IGBTs || Single IGBTs **Price**: €3.9500 **Stock**: 10+ ## Description DC Collector Current:160A; Collector Emitter Saturation Voltage Vce(on):1.55V; Power Dissipation Pd:454W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:TO-247; No. o ## Specifications | Parameter | Value | |---|---| | Msl | MSL 1 - Unlimited | | Svhc | No SVHC (19-Jan-2021) | | No. Of Pins | 3Pins | | Product Range | - | | Power Dissipation | 454W | | Transistor Mounting | Through Hole | | Transistor Case Style | TO-247 | | Operating Temperature Max | 175°C | | Continuous Collector Current | 160A | | Collector Emitter Voltage Max | 1.2kV | | Collector Emitter Saturation Voltage | 1.55V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:2627929/) NGTB40N120L3WG ## IGBT - Ultra Field Stop This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Ultra Field Stop Trench construction, and provides superior performance in demanding switching applications, offering both low on−state voltage and minimal switching loss. The IGBT is well suited for motor driver applications. Incorporated into the device is a soft and fast co−packaged free wheeling diode with a low forward voltage. **www.onsemi.com** ## **Features** - Extremely Efficient Trench with Field Stop Technology - TJmax = 175°C - Soft Fast Reverse Recovery Diode **40 A, 1200 V VCEsat = 1.55 V Eoff = 1.5 mJ** - Optimized for Low VCEsat |• Optimized for Low VCEsatCEsat|||||| |---|---|---|---|---|---| |• These are Pb−Free Devices|||||C| |**Typical Applications**|||||| |• Motor Drive Inverter|||||| |• Industrial Switching
• Welding||G|||| |**ABSOLUTE MAXIMUM RATINGS**|||||E| |**Rating**
**Symbol**
**Value**
**Unit**
Collector−emitter voltage
VCES
1200
V
Collector current
@ TC= 25°C
@ TC= 100°C
IC
160
40
A
~~ee~~
~~es~~
~~ee~~
~~a~~|||||| |Pulsed collector current, Tpulse
limited by TJmax
ICM
160
A
Diode forward current
@ TC= 25°C
@ TC= 100°C
IF
160
40
A
Diode pulsed current, Tpulselimited
by TJmax
IFM
160
A
Gate−emitter voltage
Transient gate−emitter voltage
(tpulse= 5 s, D < 0.10)
VGE
±20
±30
V
Power Dissipation
@ TC= 25°C
@ TC= 100°C
PD
454
227
W
Operating junction temperature range
TJ
−55 to +175
°C
Storage temperature range
Tstg
−55 to +175
°C
Lead temperature for soldering, 1/8″
from case for 5 seconds
TSLD
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
C
G
E
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
**MARKING DIAGRAM**
40N120L3
AYWWG
**TO−247**
**CASE 340AL**
~~es~~
~~ee ee eee~~
~~c-—~~
~~Te~~
~~es~~
~~ee eee~~
~~SS~~
ee
~~ee~~
~~ee ee~~|||||| - These are Pb−Free Devices ## **Typical Applications** - Motor Drive Inverter - Industrial Switching - Welding Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ## **ORDERING INFORMATION** |**Device**|**Package**|**Shipping**| |---|---|---| |NGTB40N120L3WG|TO−247
(Pb−Free)|30 Units / Rail| Publication Order Number: **NGTB40N120L3W/D** **1** © Semiconductor Components Industries, LLC, 2016 **May, 2016 − Rev. 1** **NGTB40N120L3WG** ## **THERMAL CHARACTERISTICS** |**THERMAL CHARACTERISTICS**|**THERMAL CHARACTERISTICS**|||||| |---|---|---|---|---|---|---| |**Rating**||**Symbol**||**Value**||**Unit**| |Thermal resistance junction−to−case, for IGBT||R�JC||0.33||°C/W| |Thermal resistance junction−to−case, for Diode||R�JC||0.61||°C/W| |Thermal resistance junction−to−ambient||R�JA||40||°C/W| |**ELECTRICAL CHARACTERISTICS**(TJ= 25°C unless otherwise specified)||||||| |**Parameter**|**Test Conditions**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**| |**STATIC CHARACTERISTIC**||||||| |Collector−emitter breakdown voltage,
gate−emitter short−circuited|VGE= 0 V, IC= 500�A|V(BR)CES|1200|−|−|V| |Collector−emitter saturation voltage|VGE= 15 V, IC= 40 A
VGE= 15 V, IC= 40 A, TJ= 175°C|VCEsat|−
−|1.55
2.0|1.8
−|V| |Gate−emitter threshold voltage|VGE= VCE, IC= 400�A|VGE(th)|4.5|5.5|6.5|V| |Collector−emitter cut−off current, gate−
emitter short−circuited|VGE= 0 V, VCE= 1200 V
VGE= 0 V, VCE= 1200 V, TJ =175°C|ICES|−
−|−
0.5|0.4|mA| |Gate leakage current, collector−emitter
short−circuited|VGE= 20 V, VCE= 0 V|IGES|−|−|200|nA| |||||||| |Input capacitance|VCE= 20 V, VGE= 0 V, f = 1 MHz|Cies|−|4912|−|pF| |Output capacitance||Coes|−|140|−|| |Reverse transfer capacitance||Cres|−|80|−|| |Gate charge total|VCE= 600 V, IC= 40 A, VGE= 15 V|Qg|−|220|−|nC| |Gate to emitter charge||Qge|−|42|−|| |Gate to collector charge||Qgc|−|110|−|| |**SWITCHING CHARACTERISTIC, INDUCTIVE LOAD**||||||| |Turn−on delay time|TJ= 25°C
VCC= 600 V, IC= 40 A
Rg= 10�
VGE= 15 V|td(on)|−|18|−|ns| |Rise time||tr|−|30|−|| |Turn−off delay time||td(off)|−|150|−|| |Fall time||tf|−|131|−|| |Turn−on switching loss||Eon|−|1.5|−|mJ| |Turn−off switching loss||Eoff|−|1.5|−|| |Total switching loss||Ets|−|3.0|−|| |Turn−on delay time|TJ= 175°C
VCC= 600 V, IC= 40 A
Rg= 10�
VGE= 15 V|td(on)|−|18|−|ns| |Rise time||tr|−|31|−|| |Turn−off delay time||td(off)|−|156|−|| |Fall time||tf|−|220|−|| |Turn−on switching loss||Eon|−|2.0|−|mJ| |Turn−off switching loss||Eoff|−|2.3|−|| |Total switching loss||Ets|−|4.3|−|| |**DIODE CHARACTERISTICS**||||||| |Forward voltage|VGE= 0 V, IF= 40 A
VGE= 0 V, IF= 40 A TJ =175°C|VF|−
−|3.0
2.8|3.4
−|V| |Reverse recovery time|TJ= 25°C
IF= 40 A, VR= 600 V
diF/dt = 500 A/�s|trr|−|86|−|ns| |Reverse recovery charge||Qrr|−|0.56|−|�c| |Reverse recovery current||Irrm|−|12|−|A| |Diode peak rate of fall of reverse recovery
current during tb||dIrrm/dt|−|−210|−|A/�s| **www.onsemi.com** **2** **NGTB40N120L3WG** ## **ELECTRICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise specified) |**Parameter**|**Test Conditions**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**| |---|---|---|---|---|---|---| |**DIODE CHARACTERISTICS**||||||| |Reverse recovery time|TJ= 125°C
IF= 40 A, VR= 600 V
diF/dt = 500 A/�s|trr|−|136|−|ns| |Reverse recovery charge||Qrr|−|1.47|−|�c| |Reverse recovery current||Irrm|−|20|−|A| |Diode peak rate of fall of reverse recovery
current during tb||dIrrm/dt|−|−212|−|A/�s| Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. **www.onsemi.com** **3** **NGTB40N120L3WG** ## **TYPICAL CHARACTERISTICS** **==> picture [238 x 174] intentionally omitted <==** **----- Start of picture text -----**
160
TJ = 25 ° C VGE = 20 to 13 V
140
11 V
120
100
80
10 V
60
40
9 V
20 7 V 8 V
0
0 1 2 3 4 5 6 7 8
VCE, COLLECTOR−EMITTER VOLTAGE (V)
, COLLECTOR CURRENT (A)
IC
**----- End of picture text -----**
**Figure 1. Output Characteristics** **==> picture [238 x 174] intentionally omitted <==** **----- Start of picture text -----**
160
TJ = 150 ° C VGE = 20 to 13 V
140
120 11 V
100
80 10 V
60
9 V
40
8 V
20
7 V
0
0 1 2 3 4 5 6 7 8
VCE, COLLECTOR−EMITTER VOLTAGE (V)
, COLLECTOR CURRENT (A)
IC
**----- End of picture text -----**
**Figure 2. Output Characteristics** **==> picture [490 x 382] intentionally omitted <==** **----- Start of picture text -----**
160 160
TJ = −55 ° C VGE = 20 to 13 V TJ = 175 ° C VGE = 20 to 13 V
140 140
11 V
120 120 11 V
100 100
80 80 10 V
10 V
60 60
9 V
40 40
8 V
20 9 V 20
7 V
7−8 V
0 0
0 1 2 3 4 5 6 7 8 0 1 2 3 4 5 6 7 8
VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 3. Output Characteristics Figure 4. Output Characteristics
160 2.8
140 2.6 I C = 75 A
2.4
120
2.2
100
2.0 IC = 40 A
80
1.8
60
1.6
40 TJ = 175 ° C 1.4 IC = 20 A
20 1.2
TJ = 25 ° C
0 1.0
0 2 4 6 8 10 12 14 −75 −50 −25 0 25 50 75 100 125 150 175 200
VGE, GATE−EMITTER VOLTAGE (V) TJ, JUNCTION TEMPERATURE ( ° C)
, COLLECTOR CURRENT (A) , COLLECTOR CURRENT (A)
IC IC
, COLLECTOR CURRENT (A)
IC
, COLLECTOR−EMITTER VOLTAGE (V)
CE
V
**----- End of picture text -----**
**Figure 5. Typical Transfer Characteristics** **Figure 6. VCE(sat) vs. TJ** **www.onsemi.com** **4** **NGTB40N120L3WG** ## **TYPICAL CHARACTERISTICS** **==> picture [490 x 592] intentionally omitted <==** **----- Start of picture text -----**
10,000 100
90
C ies
80 TJ = 175 ° C
70
1000 TJ = 25 ° C 60 T J = 25 ° C
50
Coes 40
100
30
Cres
20
10
10 0
0 10 20 30 40 50 60 70 80 90 100 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
VCE, COLLECTOR−EMITTER VOLTAGE (V) VF, FORWARD VOLTAGE (V)
Figure 7. Typical Capacitance Figure 8. Diode Forward Characteristics
16 2.3
2.1
14
Eoff
1.9
12
1.7
10 Eon
1.5
8 1.3
1.1
6
0.9 VCE = 600 V
4 V CE = 600 V VGE = 15 V
VGE = 15 V 0.7 IC = 40 A
2 I C = 40 A 0.5 Rg = 10 �
0 0.3
0 50 100 150 200 250 0 20 40 60 80 100 120 140 160 180 200
QG, GATE CHARGE (nC) TJ, JUNCTION TEMPERATURE ( ° C)
Figure 9. Typical Gate Charge Figure 10. Switching Loss vs. Temperature
1000 6
VCE = 600 V
VGE = 15 V
tf 5 TJ = 175 ° C E off
Rg = 10 �
100 t d(off) 4
tr 3 E on
10 td(on) 2
VCE = 600 V
VGE = 15 V 1
IC = 40 A
Rg = 10 �
1 0
0 20 40 60 80 100 120 140 160 180 200 10 20 30 40 50 60 70 80 90
TJ, JUNCTION TEMPERATURE ( ° C) IC, COLLECTOR CURRENT (A)
CAPACITANCE (pF)
, FORWARD CURRENT (A)
IF
SWITCHING LOSS (mJ)
, GATE−EMITTER VOLTAGE (V)
GE
V
SWITCHING TIME (ns) SWITCHING LOSS (mJ)
**----- End of picture text -----**
**Figure 11. Switching Loss vs. Temperature** **Figure 12. Switching Loss vs. IC** **www.onsemi.com** **5** **NGTB40N120L3WG** ## **TYPICAL CHARACTERISTICS** **==> picture [241 x 173] intentionally omitted <==** **----- Start of picture text -----**
1000
tf
100 t d(off)
tr
td(on)
10
VCE = 600 V
V GE = 15 V
T J = 175 ° C
Rg = 10 �
1
10 20 30 40 50 60 70 80 90
IC, COLLECTOR CURRENT (A)
SWITCHING TIME (ns)
**----- End of picture text -----**
**Figure 13. Switching Time vs. IC** **==> picture [242 x 382] intentionally omitted <==** **----- Start of picture text -----**
1000
td(off)
tf
td(on)
100 tr
VCE = 600 V
VGE = 15 V
T J = 175 ° C
IC = 40 A
10
0 10 20 30 40 50 60 70
Rg, GATE RESISTOR ( � )
Figure 15. Switching Time vs. RG
1000
VGE = 15 V
I C = 40 A
Rg = 10 �
t f T J = 175 ° C
t d(off)
100
t r
t d(on)
10
350 400 450 500 550 600 650 700 750 800
VCE, COLLECTOR−EMITTER VOLTAGE (V)
SWITCHING TIME (ns)
SWITCHING TIME (ns)
**----- End of picture text -----**
**Figure 17. Switching Time vs. VCE** **==> picture [240 x 591] intentionally omitted <==** **----- Start of picture text -----**
9
VCE = 600 V
8 VGE = 15 V
7 T J = 175 ° C Eon
IC = 40 A
6
5
4
3 Eoff
2
1
0
0 10 20 30 40 50 60 70
Rg, GATE RESISTOR ( � )
Figure 14. Switching Loss vs. RG
3.5
3.0
2.5
Eoff
2.0
1.5
Eon
1.0 VGE = 15 V
IC = 40 A
Rg = 10 �
0.5 TJ = 175 ° C
0
350 400 450 500 550 600 650 700 750 800
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 16. Switching Loss vs. VCE
1000
100
dc operation
10
50 � s
Single Nonrepetitive 100 � s
Pulse TC = 25 ° C
1 Curves must be derated 1 ms
linearly with increase
in temperature
0.1
1 10 100 1000 10,000
VCE, COLLECTOR−EMITTER VOLTAGE (V)
SWITCHING LOSS (mJ)
SWITCHING LOSS (mJ)
, COLLECTOR CURRENT (A)
IC
**----- End of picture text -----**
**Figure 18. Safe Operating Area** **www.onsemi.com** **6** **NGTB40N120L3WG** ## **TYPICAL CHARACTERISTICS** **==> picture [245 x 173] intentionally omitted <==** **----- Start of picture text -----**
1000
100
10
V GE = 15 V, T C = 175 ° C
1
1 10 100 1000 10,000
VCE, COLLECTOR−EMITTER VOLTAGE (V)
, COLLECTOR CURRENT (A)
IC
**----- End of picture text -----**
**Figure 19. Reverse Bias Safe Operating Area** **==> picture [239 x 156] intentionally omitted <==** **----- Start of picture text -----**
350
VR = 400 V
300
TJ = 175 ° C, IF = 40 A
250
200
150
100
TJ = 25 ° C, IF = 40 A
50
0
100 300 500 700 900 1100
, REVERSE RECOVERY TIME (ns)
trr
**----- End of picture text -----**
**==> picture [143 x 9] intentionally omitted <==** **----- Start of picture text -----**
diF/dt, DIODE CURRENT SLOPE (A/ � s)
**----- End of picture text -----**
**Figure 20. trr vs. diF/dt** **==> picture [489 x 176] intentionally omitted <==** **----- Start of picture text -----**
3.5 50
3.0 TJ = 175 ° C, IF = 40 A 40 TJ = 175 ° C, IF = 40 A
2.5
30
2.0
1.5
20
1.0 TJ = 25 ° C, IF = 40 A TJ = 25 ° C, IF = 40 A
10
0.5
VR = 400 V VR = 400 V
0 0
100 300 500 700 900 1100 100 300 500 700 900 1100
diF/dt, DIODE CURRENT SLOPE (A/ � s) diF/dt, DIODE CURRENT SLOPE (A/ � s)
C)
�
, REVERSE RECOVERY CHARGE ( , REVERSE RECOVERY CURRENT (A)
Qrr Irm
**----- End of picture text -----**
**Figure 21. Qrr vs. diF/dt** **Figure 22. Irm vs. diF/dt** **==> picture [244 x 173] intentionally omitted <==** **----- Start of picture text -----**
4.5
4.0 I F = 75 A
3.5
3.0 I F = 40 A
2.5
IF = 20 A
2.0
1.5
1.0
−75 −50 −25 0 25 50 75 100 125 150 175 200
TJ, JUNCTION TEMPERATURE ( ° C)
, FORWARD VOLTAGE (V)
F
V
**----- End of picture text -----**
**Figure 23. VF vs. TJ** **www.onsemi.com** **7** **NGTB40N120L3WG** ## **TYPICAL CHARACTERISTICS** **==> picture [490 x 172] intentionally omitted <==** **----- Start of picture text -----**
180
160 Ramp, TC = 110 ° C
140 NTS + Square, TC = 110 ° C Se si SCUTTL
NG
120
100 P| {Pt Square, TC = 80 ° C owe N HIN Ramp, T C = 80 ° C
80
TE TIT SSSI 7
60
f_A LT PPP NANT
40 —l_~ | aTANSa NNT
| L
20
coe ps EI TP TT ITINN SEN
0 Poe TETETTRt
0.01 0.1 1 10 100 1000
FREQUENCY (kHz)
Ipk (A)
**----- End of picture text -----**
**Figure 24. Collector Current vs. Switching Frequency** **==> picture [489 x 379] intentionally omitted <==** **----- Start of picture text -----**
1
R JC = 0.33
a AH 0 GR GD GOON OO ONG OO Os TT
pe 50% Duty Cycle ee
0.1 DT 20% rd
SSS 10%
ees 5% ———————— ——-- 8 Junction R 1 R 2 R n Case ee Ri ( ° C/W) Ci (J/W) i
0.01 Seer 2% ee=-iilller | -_ 0.0065 0.0154 |
Ci = i/Ri 0.0811 0.0039
0.0186 0.0539
Pe th ee 0.1007 0.0314 i
0.001 a C 1 C 2 C n 0.1115 0.0897 |
0.0172 1.8437
Pr OO GO 0 0 Duty Factor = t 1 /t 2 a ee ee
Single Pulse Peak TJ = PDM x Z JC + TC
0.0001 aS,PT ET el
0.000001 0.00001 0.0001 0.001 0.01 0.1 1
ON−PULSE WIDTH (s)
Figure 25. IGBT Transient Thermal Impedance
1 BO BO eS OO GO OO
RS OS OO GS GS SO Ol GS GN SO Ol CO (DG NO | aaa
R JC = 0.61
Ph oe)
ee
ee 50% Duty Cycle eeteee ee
ooo coe tT} R i ( ° C/W) ft Ci (J/W)
pe 20% Duty Factor = t1/t2 0.0110890.015127 0.0000900.000661
0.1 ——t 10% Cer| | | Peak TJ = PDM x Z JC + TC 0.015703 0.002014
0.048571 0.002059
5% Junction R1 R2 Rn Case 0.057211 0.005527
Sas es eee a 0.031254 0.031996
SS ee ore
2% C i = i /R i 0.026926 0.117443
re aa t 0.077082 0.129731
0.140155 0.225628
et Single Pulse C1 C2 oo. Cn 0.181237 0.551763
0.01
er LE
0.000001 0.00001 0.0001 0.001 0.01 0.1 1
ON−PULSE WIDTH (s)
C/W)
°
R(t), SQUARE−WAVE PEAK (
C/W)
°
R(t), SQUARE−WAVE PEAK (
**----- End of picture text -----**
**Figure 26. Diode Transient Thermal Impedance** **www.onsemi.com** **8** **NGTB40N120L3WG** **Figure 27. Test Circuit for Switching Characteristics** **Figure 28. Definition of Turn On Waveform** **www.onsemi.com** **9** **NGTB40N120L3WG** **Figure 29. Definition of Turn Off Waveform** **www.onsemi.com** **10** **NGTB40N120L3WG** ## **PACKAGE DIMENSIONS** **TO−247** CASE 340AL ISSUE B NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. **==> picture [307 x 208] intentionally omitted <==** **----- Start of picture text -----**
NOTE 4 A B SEATINGPLANE 0.635 [M] B A [M]
E A P NOTE 6
E2/2
Q S
E2
NOTE 4
D
NOTE 3
4
1 2 3
fey
L1
L NOTE 5
2X b2 c
b4 A1
3X b NOTE 7
it e 0.25 [M] | B A [M]
**----- End of picture text -----**
3. SLOT REQUIRED, NOTCH MAY BE ROUNDED. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH. MOLD FLASH SHALL NOT EXCEED 0.13 PER SIDE. THESE DIMENSIONS ARE MEASURED AT THE OUTERMOST EXTREME OF THE PLASTIC BODY. 5. LEAD FINISH IS UNCONTROLLED IN THE REGION DEFINED BY L1. 6. ∅P SHALL HAVE A MAXIMUM DRAFT ANGLE OF 1.5° TO THE TOP OF THE PART WITH A MAXIMUM DIAMETER OF 3.91. |7.|DIMENSION A1 TO BE MEASURED IN THE REGION DEFINED|DIMENSION A1 TO BE MEASURED IN THE REGION DEFINED|DIMENSION A1 TO BE MEASURED IN THE REGION DEFINED|DIMENSION A1 TO BE MEASURED IN THE REGION DEFINED| |---|---|---|---|---| ||BY L1.|||| |||**MILLIMETERS**||| ||**DIM**|**MIN**|**MAX**|| ||**A**|4.70|5.30|| ||**A1**|2.20|2.60|| ||**b**|1.00|1.40|| ||**b2**|1.65|2.35|| ||**b4**|2.60|3.40|| ||**c**|0.40|0.80|| ||**D**|20.80|21.34|| ||**E**|15.50|16.25|| ||**E2**|4.32|5.49|| ||**e**|5.45 BSC|5.45 BSC|| ||**L**|19.80|20.80|| ||**L1**|3.81|4.32|| ||**P**|3.55|3.65|| ||**Q**|5.40|6.20|| ||**S**|6.15 BSC|6.15 BSC|| ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. 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