# IGBT, 60 A, 1.9 V, 189 W, 600 V, TO-247, 3 Pins ![Product image](https://novapart.co/image/farnell:2452035/) **URL**: https://novapart.co/products/NGTB30N60SWG./igbt-60-a-19-v-189-w-600-to-247-3-pins **SKU**: NGTB30N60SWG. **Manufacturer**: ONSEMI **Category**: Semiconductors - Discretes || IGBTs || Single IGBTs **Price**: €1.0800 **Stock**: 10+ ## Specifications | Parameter | Value | |---|---| | No. Of Pins | 3Pins | | Power Dissipation | 189W | | Transistor Mounting | Through Hole | | Transistor Case Style | TO-247 | | Operating Temperature Max | 150°C | | Continuous Collector Current | 60A | | Collector Emitter Voltage Max | 600V | | Collector Emitter Saturation Voltage | 1.9V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:2452035/) ## NGTB30N60SWG ## IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for half bridge resonant applications. Incorporated into the device is a soft and fast co−packaged free wheeling diode with a low forward voltage. ## **Features** - Low Saturation Voltage using Trench with Fieldstop Technology - Low Switching Loss Reduces System Power Dissipation ## **http://onsemi.com** **==> picture [79 x 44] intentionally omitted <==** **----- Start of picture text -----**
30 A, 600 V
VCEsat = 1.9 V
Eoff = 0.54 mJ
**----- End of picture text -----**
- Low Gate Charge • Soft, Fast Free Wheeling Diode C • These are Pb−Free Devices **Typical Applications** • Inverter Welding G • UPS Systems E **ABSOLUTE MAXIMUM RATINGS** ~~es~~ **Rating Symbol Value Unit** Collector−emitter voltage VCES 600 V ~~es eG~~ ~~**s** Ge~~ Collector current IC A ‘ @ TC = 25 ° C 60 @ TC = 100 ° C 30 ~~|,~~ G OD **TO−247** Pulsed collector current, Tlimited by TJmax pulse ICM 120 ~~|~~ A FF C E **CASE 340L** ~~ee~~ **STYLE 4** Diode forward current IF A @ TC = 25 ° C 60 @ TC = 100 ° C 30 ~~ee~~ **MARKING DIAGRAM** Diode pulsed current, Tpulse limited IFM 120 A by TJmax ~~ee ee ee +~~ Gate−emitter voltage VGE 20 V Power Dissipation PD W @ TC = 25 ° C 189 @ TC = 100 ° C 76 30N60S ~~A~~ Operating junction temperature TJ −55 to +150 ° C AYWWG range ~~ee || es~~ Storage temperature range ~~ee~~ Tstg ~~ee~~ −55 to +150 ~~Ge~~ ° C Lead temperature for soldering, 1/8 ″ TSLD 260 ° C from case for 5 seconds Stresses exceeding those listed in the Maximum Ratings table may damage the A = Assembly Location device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Y = Year WW = Work Week G = Pb−Free Package - Soft, Fast Free Wheeling Diode - These are Pb−Free Devices ## **Typical Applications** - Inverter Welding - UPS Systems Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ## **ORDERING INFORMATION** |**Device**|**Package**|**Shipping**| |---|---|---| |NGTB30N60SWG|TO−247
(Pb−Free)|30 Units / Rail| Publication Order Number: **NGTB30N60SW/D** **1** © Semiconductor Components Industries, LLC, 2014 **July, 2014 − Rev. 0** **NGTB30N60SWG** ## **THERMAL CHARACTERISTICS** |**THERMAL CHARACTERISTICS**|||| |---|---|---|---| |**Rating**|**Symbol**|**Value**|**Unit**| |Thermal resistance junction−to−case, for IGBT|R�JC|0.66|°C/W| |Thermal resistance junction−to−case, for Diode|R�JC|2.73|°C/W| |Thermal resistance junction−to−ambient|R�JA|40|°C/W| ## **ELECTRICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise specified) |**Parameter**|**Test Conditions**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**| |---|---|---|---|---|---|---| |**STATIC CHARACTERISTIC**||||||| |Collector−emitter breakdown voltage,
gate−emitter short−circuited|VGE= 0 V, IC= 500�A|V(BR)CES|600|−|−|V| |Collector−emitter saturation voltage|VGE= 15 V, IC= 30 A
VGE= 15 V, IC= 30 A, TJ= 150°C|VCEsat|−
−|1.9
2.6|2.2
−|V| |Gate−emitter threshold voltage|VGE= VCE, IC= 150�A|VGE(th)|4.5|5.5|6.5|V| |Collector−emitter cut−off current, gate−
emitter short−circuited|VGE= 0 V, VCE= 600 V
VGE= 0 V, VCE= 600 V, TJ =150°C|ICES|−
−|−
−|0.2
2|mA| |Gate leakage current, collector−emitter
short−circuited|VGE= 20 V , VCE= 0 V|IGES|−|−|100|nA| |**DYNAMIC CHARACTERISTIC**||||||| |Input capacitance|VCE= 20 V, VGE= 0 V, f = 1 MHz|Cies|−|2040|−|pF| |Output capacitance||Coes|−|70|−|| |Reverse transfer capacitance||Cres|−|50|−|| |Gate charge total|VCE= 480 V, IC= 30 A, VGE= 15 V|Qg||90||nC| |Gate to emitter charge||Qge||19||| |Gate to collector charge||Qgc||45||| |**SWITCHING CHARACTERISTIC, INDUCTIVE LOAD**||||||| |Turn−on delay time|TJ= 25°C
VCC= 400 V, IC= 30 A
Rg= 10�
VGE= 0 V/ 15 V|td(on)||57||ns| |Rise time||tr||32||| |Turn−off delay time||td(off)||109||| |Fall time||tf||91||| |Turn−on switching loss||Eon||0.75||mJ| |Turn−off switching loss||Eoff||0.54||mJ| |Turn−on delay time|TJ= 150°C
VCC= 400 V, IC= 30 A
Rg= 10�
VGE= 0 V/ 15 V|td(on)||56||ns| |Rise time||tr||34||| |Turn−off delay time||td(off)||113||| |Fall time||tf||172||| |Turn−on switching loss||Eon||0.91||mJ| |Turn−off switching loss||Eoff||0.87||mJ| |**DIODE CHARACTERISTIC**||||||| |Forward voltage|VGE= 0 V, IF= 30 A
VGE= 0 V, IF= 30 A, TJ= 150°C|VF||2.3
2.5|2.5|V| |Reverse recovery time|TJ= 25°C
IF= 30 A, VR= 400 V
diF/dt = 200 A/�s|trr||200||ns| |Reverse recovery charge||Qrr||1000||nc| |Reverse recovery current||Irrm||9||A| Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. **http://onsemi.com** **2** **NGTB30N60SWG** ## **TYPICAL CHARACTERISTICS** **==> picture [490 x 593] intentionally omitted <==** **----- Start of picture text -----**
120 120
110 VGE to 20 V = 15 V 13 V TJ = 150 ° C VGE = 15 V
100 100 to 20 V
90
13 V
80 T J = 25 ° C 80
70
60 11 V 60
11 V
50
40 10 V 40 10 V
30 9 V
9 V
20 20 8 V
7 V
10 8 V 7 V
0 0
0 1 2 3 4 5 6 7 8 0 1 2 3 4 5 6 7 8
VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 1. Output Characteristics Figure 2. Output Characteristics
120 120
VGE = 15 V 13 V TJ = −55 ° C
to 20 V
100 100
TJ = 25 ° C
80 80
TJ = 150 ° C
11 V
60 60
40 10 V 40
20 9 V 20
8 V
0 0
0 1 2 3 4 5 6 7 8 0 2 4 6 8 10 12 14 16 18
VCE, COLLECTOR−EMITTER VOLTAGE (V) VGE, GATE−EMITTER VOLTAGE (V)
Figure 3. Output Characteristics Figure 4. Typical Transfer Characteristics
4.5 10,000
IC = 60 A
4.0
C ies
3.5
1000
3.0
IC = 30 A
2.5 T J = 25 ° C
2.0 IC = 15 A 100 Coes
1.5 IC = 5 A Cres
1.0
0.5 10
−75 −50 −25 0 25 50 75 100 125 150 175 200 0 10 20 30 40 50 60 70 80 90 100
TJ, JUNCTION TEMPERATURE ( ° C) VCE, COLLECTOR−EMITTER VOLTAGE (V)
, COLLECTOR CURRENT (A) , COLLECTOR CURRENT (A)
IC IC
, COLLECTOR CURRENT (A) , COLLECTOR CURRENT (A)
IC IC
C, CAPACITANCE (pF)
, COLLECTOR−EMITTER VOLTAGE (V)
CE
V
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**Figure 5. VCE(sat) vs. TJ** **Figure 6. Typical Capacitance** **http://onsemi.com** **3** **NGTB30N60SWG** ## **TYPICAL CHARACTERISTICS** **==> picture [491 x 592] intentionally omitted <==** **----- Start of picture text -----**
120 20
18
100
° 16
TJ = 25 C
14
80
12
TJ = 150 ° C
60 10
8
40 6 VCE = 400 V
VGE = 15 V
4
20 IC = 30 A
2
0 0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0 10 20 30 40 50 60 70 80 90 100
VF, FORWARD VOLTAGE (V) QG, GATE CHARGE (nC)
Figure 7. Diode Forward Characteristics Figure 8. Typical Gate Charge
1.5 1000
VCE = 400 V V CE = 400 V
VGE = 15 V VGE = 15 V
IC = 30 A IC = 30 A
Rg = 10 � Rg = 10 �
1.0 tf
Eon
100 td(off)
Eoff
0.5 td(on)
t r
0 10
0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160
TJ, JUNCTION TEMPERATURE ( ° C) TJ, JUNCTION TEMPERATURE ( ° C)
Figure 9. Switching Loss vs. Temperature Figure 10. Switching Time vs. Temperature
3.0 1000
VCE = 400 V
2.5 V VTJ CE GE = 150 = 400 V = 15 V ° C Eon tf VT Rg = 10 J GE = 150 = 15 V � ° C
2.0
Rg = 10 �
1.5 100 td(off)
Eoff
1.0 td(on)
0.5
tr
0 10
0 10 20 30 40 50 60 70 0 10 20 30 40 50 60
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
, FORWARD CURRENT (A)
IF , GATE−EMITTER VOLTAGE (V)GE
V
SWITCHING TIME (ns)
SWITCHING LOSS (mJ)
SWITCHING TIME (ns)
SWITCHING LOSS (mJ)
**----- End of picture text -----**
**Figure 11. Switching Loss vs. IC** **Figure 12. Switching Time vs. IC** **http://onsemi.com** **4** **NGTB30N60SWG** ## **TYPICAL CHARACTERISTICS** **==> picture [491 x 172] intentionally omitted <==** **----- Start of picture text -----**
3.0 1000
2.5 VCE = 400 V t d(off)
VGE = 15 V EON
TJ = 150 ° C
2.0 IC = 30 A tf
1.5 100 t d(on)
tr
EOFF
1.0
V CE = 400 V
V GE = 15 V
0.5 TJ = 150 ° C
IC = 30 A
0 10
5 15 25 35 45 55 65 75 5 15 25 35 45 55 65 75 85
Rg, GATE RESISTOR ( � ) Rg, GATE RESISTOR ( � )
SWITCHING LOSS (mJ) SWITCHING TIME (ns)
**----- End of picture text -----**
**Figure 13. Switching Loss vs. Rg** **Figure 14. Switching Time vs. Rg** **==> picture [247 x 381] intentionally omitted <==** **----- Start of picture text -----**
1.8
1.61.4 V TJGE= = 15 V 150 ° C EOFF
IC = 30 A
1.2 Rg = 10 �
1.0 EON
0.8
0.6
0.4
0.2
0
175 225 275 325 375 425 475 525 575
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 15. Switching Loss vs. VCE
1000
100
10
50 � s
Single Nonrepetitive 100 � s
1 Pulse TC = 25 ° C
Curves must be derated 1 m s
linearly with increase dc operation
in temperature
0.1
1 10 100 1000
VCE, COLLECTOR−EMITTER VOLTAGE (V)
SWITCHING LOSS (mJ)
, COLLECTOR CURRENT (A)
IC
**----- End of picture text -----**
**Figure 17. Safe Operating Area** **==> picture [242 x 381] intentionally omitted <==** **----- Start of picture text -----**
1000
V GE = 15 V
T J = 150 ° C
IC = 30 A
Rg = 10 �
t f
td(off)
100
t d(on)
tr
10
175 225 275 325 375 425 475 525 575
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 16. Switching Time vs. VCE
1000
100
10
VGE = 15 V, TC = 125 ° C
1
1 10 100 1000
VCE, COLLECTOR−EMITTER VOLTAGE (V)
SWITCHING TIME (ns)
, COLLECTOR CURRENT (A)
IC
**----- End of picture text -----**
**Figure 18. Reverse Bias Safe Operating Area** **http://onsemi.com** **5** **NGTB30N60SWG** ## **TYPICAL CHARACTERISTICS** **==> picture [487 x 389] intentionally omitted <==** **----- Start of picture text -----**
1
50% Duty Cycle
20% R � JC = 0.66
0.1 10%
5%
2% Junction R 1 R 2 R n Case R i ( ° C/W) C i (J/ ° C)
0.01 0.045172 0.002214
0.175067 0.001806
0.060092 0.016641
0.270047 0.011710
C1 C2 Cn 0.108471 0.092191
0.001
0.002714 11.650732
Single Pulse Duty Factor = t1/t2
Peak T J = P DM x Z � JC + T C
0.0001
0.000001 0.00001 0.0001 0.001 0.01 0.1 1
ON−PULSE WIDTH (s)
Figure 19. IGBT Die Self−heating Square−wave Duty Cycle Transient Thermal Response
10
R � JC = 2.73
50% Duty Cycle
1
20%
10% Junction R1 R2 Rn Case R i ( ° C/W) C i (J/ ° C)
0.069970 0.000014
5%
0.092027 0.000109
2% 0.101062 0.000313
0.1 0.230940 0.000433
Single Pulse C1 C2 Cn 0.414345 0.000763
0.937517 0.001067
Duty Factor = t1/t2 0.780222 0.004053
0.098174 0.101860
Peak TJ = PDM x Z � JC + TC
0.01
0.000001 0.00001 0.0001 0.001 0.01 0.1 1
ON−PULSE WIDTH (s)
C/W)
°
SQUARE−WAVE PEAK R(t) (
C/W)
°
SQUARE−WAVE PEAK R(t) (
**----- End of picture text -----**
**Figure 20. Diode Die Self−heating Square−wave Duty Cycle Transient Thermal Response** **http://onsemi.com** **6** **NGTB30N60SWG** ## **PACKAGE DIMENSIONS** **==> picture [448 x 254] intentionally omitted <==** **----- Start of picture text -----**
TO−247
CASE 340L−02
ISSUE F
−T− NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
C Y14.5M, 1982.
− B− 2. CONTROLLING DIMENSION: MILLIMETER.
E
MILLIMETERS INCHES
U L DIMA 20.32 MIN 21.08 MAX 0.800 MIN MAX 8.30
N 4 B 15.75 16.26 0.620 0.640
C 4.70 5.30 0.185 0.209
A −Q− DE 1.001.90 1.402.60 0.0400.075 0.0550.102
1 2 3 0.63 (0.025) [M] T B M F 1.65 2.13 0.065 0.084
G 5.45 BSC 0.215 BSC
H 1.50 2.49 0.059 0.098
P J 0.40 0.80 0.016 0.031
−Y− K 19.81 20.83 0.780 0.820
L 5.40 6.20 0.212 0.244
K N 4.32 5.49 0.170 0.216
P --- 4.50 --- 0.177
Q 3.55 3.65 0.140 0.144
U 6.15 BSC 0.242 BSC
W 2.87 3.12 0.113 0.123
W J
F 2 PL H STYLE 4:PIN 1. GATE
Tl G e 2. COLLECTOR
Wl D 3 PL 3. EMITTER
4. COLLECTOR
0.25 (0.010) [M] Y Q S
**----- End of picture text -----**
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