# IGBT, 100 A, 1.7 V, 349 W, 1.2 kV, TO-247, 3 Pins

![Product image](https://novapart.co/image/farnell:2627927/)

**URL**: https://novapart.co/products/NGTB25N120FL3WG/igbt-100-a-17-v-349-w-12-kv-to-247-3-pins
**SKU**: NGTB25N120FL3WG
**Manufacturer**: ONSEMI
**Category**: Semiconductors - Discretes || IGBTs || Single IGBTs
**Price**: €2.7500
**Stock**: 10+
**Lead Time**: 106 days (indicative)

## Description

DC Collector Current:100A; Collector Emitter Saturation Voltage Vce(on):1.7V; Power Dissipation Pd:349W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:TO-247; No. of

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | - |
| Power Dissipation | 349W |
| Transistor Mounting | Through Hole |
| Transistor Case Style | TO-247 |
| Operating Temperature Max | 175°C |
| Continuous Collector Current | 100A |
| Collector Emitter Voltage Max | 1.2kV |
| Collector Emitter Saturation Voltage | 1.7V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2627927/)

**DATA SHEET www.onsemi.com** ~~ee~~ 

## IGBT - Ultra Field Stop NGTB25N120FL3WG 

This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Ultra Field Stop Trench construction, and provides superior performance in demanding switching applications, offering both low on−state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft and fast co−packaged free wheeling diode with a low forward voltage. 

## **Features** 

- Extremely Efficient Trench with Field Stop Technology 

- TJmax = 175°C 

- Soft Fast Reverse Recovery Diode 

- Optimized for High Speed Switching 

- These are Pb−Free Devices 

## **Typical Applications** 

- Solar Inverter 

- Uninterruptible Power Inverter Supplies (UPS) 

**25 A, 1200 V VCEsat = 1.7 V Eoff = 0.7 mJ** 

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C<br>G<br>E<br>G<br>C<br>E<br>TO−247<br>CASE 340AM<br>**----- End of picture text -----**<br>


- Welding 

## **ABSOLUTE MAXIMUM RATINGS** 

|**ABSOLUTE MAXIMUM RATINGS**||||
|---|---|---|---|
|**Rating**|**Symbol**|**Value**|**Unit**|
|Collector−emitter Voltage|VCES|1200|V|
|Collector Current<br>@ TC= 25°C<br>@ TC= 100°C|IC|50<br>25|A|
|Pulsed Collector Current, Tpulse<br>Limited by TJmax<br>~~ee~~<br>~~es~~|ICM<br>~~ee~~<br>~~es~~|100<br>~~ee~~<br>~~es~~|A<br>~~ee~~<br>~~es~~|
|Diode Forward Current<br>@ TC= 25°C<br>@ TC= 100°C<br>~~es~~|IF<br>~~es~~|50<br>25<br>~~es~~|A<br>~~es~~|
|Diode Pulsed Current, TpulseLimited<br>by TJmax|IFM|100|A|
|Gate−emitter Voltage<br>Transient Gate−emitter Voltage<br>(Tpulse= 5 s, D < 0.10)<br>~~pt~~|VGE<br>~~pt~~|20<br>±30<br>~~pt~~|V<br>~~pt~~|
|Power Dissipation<br>@ TC= 25°C<br>@ TC= 100°C<br>~~pt~~|PD<br>~~pt~~|349<br>174<br>~~pt~~|W<br>~~pt~~|
|Operating Junction Temperature<br>Range<br>~~pt~~<br>~~a~~|TJ<br>~~pt~~|−55 to +175<br>~~pt~~|°C<br>~~pt~~|
|Storage Temperature Range<br>~~a~~|Tstg|−55 to +175|°C|
|Lead temperature for soldering, 1/8″<br>from case for 5 seconds<br>~~a~~|TSLD|260|°C|



## **MARKING DIAGRAM** 

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25N120FL3<br>AYWWG<br>**----- End of picture text -----**<br>


|25N120FL3<br>AYWWG<br>~~Lao~~<br>ee|25N120FL3<br>AYWWG<br>~~Lao~~<br>ee|
|---|---|
|25N120FL3 = Specific Device Code||
|A|= Assembly Location|
|Y<br>WW<br>G|= Year<br>= Work Week<br>= Pb−Free Package|



**ORDERING INFORMATION** 

**Device Package Shipping** NGTB25N120FL3WG TO−247 30 Units / Rail (Pb−Free) ~~TE~~ 

Publication Order Number: **NGTB25N120FL3W/D** 

**1** 

© Semiconductor Components Industries, LLC, 2016 **October, 2021 − Rev. 6** 

**NGTB25N120FL3WG** 

## **THERMAL CHARACTERISTICS** 

|**THERMAL CHARACTERISTICS**|**THERMAL CHARACTERISTICS**||||||
|---|---|---|---|---|---|---|
|**Rating**||**Symbol**||**Value**||**Unit**|
|Thermal resistance junction−to−case, for IGBT||R�JC||0.43||°C/W|
|Thermal resistance junction−to−case, for Diode||R�JC||0.78||°C/W|
|Thermal resistance junction−to−ambient||R�JA||40||°C/W|
|**ELECTRICAL CHARACTERISTICS**(TJ= 25°C unless otherwise specified)|||||||
|**Parameter**|**Test Conditions**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|
|**STATIC CHARACTERISTIC**|||||||
|Collector−emitter breakdown voltage,<br>gate−emitter short−circuited|VGE= 0 V, IC= 500�A|V(BR)CES|1200|−|−|V|
|Collector−emitter saturation voltage|VGE= 15 V, IC= 25 A<br>VGE= 15 V, IC= 25 A, TJ= 175°C|VCEsat|−<br>−|1.70<br>2.20|1.95<br>−|V|
|Gate−emitter threshold voltage|VGE= VCE, IC= 400�A|VGE(th)|4.5|5.5|6.5|V|
|Collector−emitter cut−off current, gate−<br>emitter short−circuited|VGE= 0 V, VCE= 1200 V<br>VGE= 0 V, VCE= 1200 V, TJ =175°C|ICES|−<br>−|−<br>0.4|0.1<br>2|mA|
|Gate leakage current, collector−emitter<br>short−circuited|VGE= 20 V , VCE= 0 V|IGES|−|−|200|nA|
|**DYNAMIC CHARACTERISTIC**|||||||
|Input capacitance|VCE= 20 V, VGE= 0 V, f = 1 MHz|Cies|−|3085|−|pF|
|Output capacitance||Coes|−|94|−||
|Reverse transfer capacitance||Cres|−|52|−||
|Gate charge total|VCE= 600 V, IC= 25 A, VGE= 15 V|Qg|−|136|−|nC|
|Gate to emitter charge||Qge|−|29|−||
|Gate to collector charge||Qgc|−|67|−||
|**SWITCHING CHARACTERISTIC, INDUCTIVE LOAD**|||||||
|Turn−on delay time|TJ= 25°C<br>VCC= 600 V, IC= 25 A<br>Rg= 10�<br>VGE= 15 V|td(on)|−|15|−|ns|
|Rise time||tr|−|21|−||
|Turn−off delay time||td(off)|−|109|−||
|Fall time||tf|−|131|−||
|Turn−on switching loss||Eon|−|1.0|−|mJ|
|Turn−off switching loss||Eoff|−|0.7|−||
|Total switching loss||Ets|−|1.7|−||
|Turn−on delay time|TJ= 150°C<br>VCC= 600 V, IC= 25 A<br>Rg= 10�<br>VGE= 15 V|td(on)|−|15|−|ns|
|Rise time||tr|−|21|−||
|Turn−off delay time||td(off)|−|113|−||
|Fall time||tf|−|169|−||
|Turn−on switching loss||Eon|−|1.45|−|mJ|
|Turn−off switching loss||Eoff|−|0.95|−||
|Total switching loss||Ets|−|2.4|−||
|**DIODE CHARACTERISTICS**|||||||
|Forward voltage|VGE= 0 V, IF= 25 A<br>VGE= 0 V, IF= 25 A TJ =175°C|VF|−<br>−|3.0<br>2.8|3.4<br>−|V|
|Reverse recovery time|TJ= 25°C<br>IF= 25 A, VR= 600 V<br>diF/dt = 500 A/�s|trr|−|90|−|ns|
|Reverse recovery charge||Qrr|−|0.62|−|�c|
|Reverse recovery current||Irrm|−|12|−|A|
|Diode peak rate of fall of reverse recovery<br>current during tb||dIrrm/dt|−|−256|−|A/�s|



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**NGTB25N120FL3WG** 

## **ELECTRICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise specified) 

|**Parameter**|**Test Conditions**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|
|---|---|---|---|---|---|---|
|**DIODE CHARACTERISTICS**|||||||
|Reverse recovery time|TJ= 125°C<br>IF= 25 A, VR= 600 V<br>diF/dt = 500 A/�s|trr|−|114|−|ns|
|Reverse recovery charge||Qrr|−|1.17|−|�c|
|Reverse recovery current||Irrm|−|17|−|A|
|Diode peak rate of fall of reverse recovery<br>current during tb||dIrrm/dt|−|−296|−|A/�s|



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 

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**NGTB25N120FL3WG** 

## **TYPICAL CHARACTERISTICS** 

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100<br>TJ = 25 ° C VGE = 20 V − 13 V<br>80<br>11 V<br>60<br>40 10 V<br>20<br>9 V<br>7 V 8 V<br>0<br>0 1 2 3 4 5 6 7 8<br>VCE, COLLECTOR−EMITTER VOLTAGE (V)<br>Figure 1. Output Characteristics<br>100<br>VGE =  TJ = −55 ° C<br>20 V − 13 V<br>80<br>11 V<br>60<br>40<br>10 V<br>20<br>9 V<br>7 V and 8 V<br>0<br>0 1 2 3 4 5 6 7 8<br>VCE, COLLECTOR−EMITTER VOLTAGE (V)<br>Figure 3. Output Characteristics<br>100<br>TJ = 25 ° C TJ = 175 ° C<br>80<br>60<br>40<br>20<br>0<br>0 2 4 6 8 10 12 14 16<br>VGE, GATE−EMITTER VOLTAGE (V)<br>, COLLECTOR CURRENT (A)<br>IC<br>, COLLECTOR CURRENT (A)<br>IC<br>, COLLECTOR CURRENT (A)<br>IC<br>**----- End of picture text -----**<br>


**Figure 5. Typical Transfer Characteristics** 

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100<br>VGE = 20 V − 13 V<br>80<br>TJ = 150 ° C 11 V<br>60<br>10 V<br>40<br>9 V<br>20<br>8 V<br>7 V<br>0<br>0 1 2 3 4 5 6 7 8<br>VCE, COLLECTOR−EMITTER VOLTAGE (V)<br>Figure 2. Output Characteristics<br>100<br>VGE = 20 V − 13 V<br>80<br>TJ = 175 ° C 11 V<br>60<br>10 V<br>40<br>9 V<br>20<br>8 V<br>7 V<br>0<br>0 1 2 3 4 5 6 7 8<br>VCE, COLLECTOR−EMITTER VOLTAGE (V)<br>Figure 4. Output Characteristics<br>3.5<br>3.0 IC = 50 A<br>2.5<br>IC = 25 A<br>2.0<br>1.5 IC = 10 A<br>1.0<br>−75 −50 −25 0 25 50 75 100 125 150 175 200<br>TJ, JUNCTION TEMPERATURE ( ° C)<br>, COLLECTOR CURRENT (A)<br>IC<br>, COLLECTOR CURRENT (A)<br>IC<br>, COLLECTOR−EMITTER VOLTAGE (V)<br>CE<br>V<br>**----- End of picture text -----**<br>


**Figure 6. VCE(sat) vs. TJ** 

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## **TYPICAL CHARACTERISTICS** 

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10,000 100<br>Cies 90<br>80<br>1000 TJ = 25 ° C 70<br>60<br>50<br>40<br>100 Coes 30<br>20 TJ = 175 ° C<br>C res 10 T J  = 25 ° C<br>10 0<br>0 10 20 30 40 50 60 70 80 90 100 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0<br>VCE, COLLECTOR−EMITTER VOLTAGE (V) VF, FORWARD VOLTAGE (V)<br>Figure 7. Typical Capacitance Figure 8. Diode Forward Characteristics<br>16 1.7<br>VCE = 600 V<br>14 1.5 VGE = 15 V<br>IC = 25 A Eon<br>12<br>1.3 Rg = 10  �<br>10<br>1.1<br>8<br>0.9 Eoff<br>6<br>0.7<br>4 VCE = 600 V<br>VGE = 15 V<br>2 I C  = 25 A 0.5<br>0 0.3<br>0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160 180 200<br>QG, GATE CHARGE (nC) TJ, JUNCTION TEMPERATURE ( ° C)<br>Figure 9. Typical Gate Charge Figure 10. Switching Loss vs. Temperature<br>1000 6<br>VVCEGE = 600 V = 15 V Eon<br>tf 5 TJ = 175 ° C<br>Rg = 10  �<br>100 4<br>td(off)<br>Eoff<br>tr 3<br>10 t d(on) 2<br>VCE = 600 V<br>VGE = 15 V<br>1<br>IC = 25 A<br>Rg = 10  �<br>1 0<br>0 20 40 60 80 100 120 140 160 180 200 10 20 30 40 50 60 70 80 90<br>TJ, JUNCTION TEMPERATURE ( ° C) IC, COLLECTOR CURRENT (A)<br>CAPACITANCE (pF)<br>, FORWARD CURRENT (A)<br>IF<br>SWITCHING LOSS (mJ)<br>, GATE−EMITTER VOLTAGE (V)<br>GE<br>V<br>SWITCHING TIME (ns) SWITCHING LOSS (mJ)<br>**----- End of picture text -----**<br>


**Figure 11. Switching Time vs. Temperature** 

**Figure 12. Switching Loss vs. IC** 

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## **TYPICAL CHARACTERISTICS** 

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1000 6<br>VCE = 600 V<br>VGE = 15 V<br>tf 5 TJ = 175 ° C Eon<br>IC = 25 A<br>100 td(off) 4<br>tr 3<br>t d(on)<br>10 2<br>VCE = 600 V<br>VGE = 15 V Eoff<br>T J  = 175 ° C 1<br>Rg = 10  �<br>1 0<br>10 20 30 40 50 60 70 80 90 0 10 20 30 40 50 60 70<br>IC, COLLECTOR CURRENT (A) RG, GATE RESISTOR ( � )<br>Figure 13. Switching Time vs. IC Figure 14. Switching Loss vs. RG<br>1000 2.5<br>VCE = 600 VCE = 600 V = 600 V VGE = 15 VGE = 15 V = 15 V<br>VTITII C JGE = 25 A = 175 = 15 VGE = 25 A = 175 = 15 V = 25 A = 175 = 15 V = 175 = 15 VC ° C t d(off) t f 2.0 I Rg = 10 TCJTCJCJ  = 25 A  = 175 �° C E on<br>1.5<br>trr<br>100 Eoffoff<br>td(on)d(on)<br>1.0<br>0.5<br>10 0<br>0 10 20 30 40 50 60 70 350 400 450 500 550 600 650 700 750 800<br>RG, GATE RESISTOR (G, GATE RESISTOR (, GATE RESISTOR ( � ) VCE, COLLECTOR−EMITTER VOLTAGE (V)CE, COLLECTOR−EMITTER VOLTAGE (V), COLLECTOR−EMITTER VOLTAGE (V)<br>SWITCHING TIME (ns) SWITCHING LOSS (mJ)<br>SWITCHING TIME (ns) SWITCHING LOSS (mJ)<br>**----- End of picture text -----**<br>


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1000 2.5<br>VCE = 600 VCE = 600 V = 600 V VGE = 15 VGE = 15 V = 15 V<br> = 15 V ° J = 175 ° C<br>VTITII C JGE = 25 A = 175 = 15 VGE = 25 A = 175 = 15 V = 25 A = 175 = 15 V = 175 = 15 VC t d(off) t f 2.0 I Rg = 10 TCJTCJCJ  = 25 A �° E on<br>1.5<br>trr<br>100 Eoffoff<br>td(on)d(on)<br>1.0<br>0.5<br>10 0<br>0 10 20 30 40 50 60 70 350 400 450 500 550 600 650 700 750 800<br>RG, GATE RESISTOR (G, GATE RESISTOR (, GATE RESISTOR ( � ) VCE, COLLECTOR−EMITTER VOLTAGE (V)CE, COLLECTOR−EMITTER VOLTAGE (V), COLLECTOR−EMITTER VOLTAGE (V)<br>Figure 15. Switching Time vs. RG Figure 16. Switching Loss vs. VCE<br>1000 1000<br>VGE = 15 V<br>TJ = 175 ° C<br>IC = 25 A<br>Rg = 10  � 100<br>tf<br>td(off) dc operation<br>100 10<br>50  � s<br>Single Nonrepetitive 100  � s<br>1 Pulse T C  = 25 ° C<br>tr Curves must be derated 1 ms<br>t d(on) linearly with increase<br>in temperature<br>10 0.1<br>350 400 450 500 550 600 650 700 750 800 1 10 100 1K 10K<br>VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V)<br>SWITCHING TIME (ns) SWITCHING LOSS (mJ)<br>SWITCHING TIME (ns)<br>, COLLECTOR CURRENT (A)<br>IC<br>**----- End of picture text -----**<br>


**Figure 17. Switching Time vs. VCE** 

**Figure 18. Safe Operating Area** 

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**NGTB25N120FL3WG** 

## **TYPICAL CHARACTERISTICS** 

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1000 300<br>VR = 400 V<br>250<br>TJ = 175 ° C, IF = 25 A<br>100 200<br>150<br>10 100<br>TJ = 25 ° C, IF = 25 A<br>50<br>V GE  = 15 V, T C  = 175 ° C<br>1 0<br>1 10 100 1K 10K 100 300 500 700 900 1100<br>VCE, COLLECTOR−EMITTER VOLTAGE (V) diF/dt, DIODE CURRENT SLOPE (A/ � s)<br>Figure 19. Reverse Bias Safe Operating Area Figure 20. trr vs. diF/dt<br>2.5 50<br>VR = 400 V<br>TJ = 175 ° C, IF = 25 A<br>2.0 40<br>TJ = 175 ° C, IF = 25 A<br>1.5 30<br>1.0 20<br>TJ = 25 ° C, IF = 25 A TJ = 25 ° C, IF = 25 A<br>0.5 10<br>VR = 400 V<br>0 0<br>100 300 500 700 900 1100 100 300 500 700 900 1100<br>diF/dt, DIODE CURRENT SLOPE (A/ � s) diF/dt, DIODE CURRENT SLOPE (A/ � s)<br>Figure 21. Qrr vs. diF/dt Figure 22. Irm vs. diF/dt<br>4.5<br>4.0 I C  = 50 A<br>3.5<br>3.0 IC = 25 A<br>2.5<br>IC = 10 A<br>2.0<br>1.5<br>1.0<br>−75 −50 −25 0 25 50 75 100 125 150 175 200<br>TJ, JUNCTION TEMPERATURE ( ° C)<br>, COLLECTOR CURRENT (A)<br>IC<br>, REVERSE RECOVERY TIME (ns)<br>trr<br>C)<br>�<br>, REVERSE RECOVERY CHARGE (Qrr , REVERSE RECOVERY CURRENT (A)Irm<br>, FORWARD VOLTAGE (V)<br>F<br>V<br>**----- End of picture text -----**<br>


**Figure 23. VF vs. TJ** 

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**NGTB25N120FL3WG** 

**TYPICAL CHARACTERISTICS** 

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120<br>Ramp, TC = 110 ° C<br>100<br>Ramp, TC = 80 ° C<br>80 Sort LE Square, TC = 110 TT ° C SSN<br>60 SeeTh Tt ltT SONOSX<br>Square, TC = 80 ° C<br>40 te OUteNTTIAE aN INU ENTANTTT<br>VCE = 600 V,<br>20 Lepooaale RG = 10  OIE LTA= ONi INN\A<br>po 4 im VGE = 15 V Q I i NU aM<br>0 222m LETHE FEET MKPL NUEAS<br>0.01 0.1 1 10 100 1000<br>FREQUENCY (kHz)<br>Figure 24. Collector Current vs. Switching Frequency<br>1<br>R JC = 0.43<br>50% Duty Cycle<br>—————————— ian<br>20%<br>0.1 A<br>10%<br>SS SSae— =<br>fl 5% 2% | | [| Junction R 1 R 2 R n Case R 0.0096i ( ° C/W) C 0.0105i (J/W)<br>0.01 ee eee 0.1168 0.0027 l<br>0.0275 0.0363<br>0.1537 0.0206<br>a a ss 0.1167 0.0857 I<br>0.001 a ee ee C 1 C 2 C n 0.0095 3.3131 l<br>yp) ff Duty Factor = t1/t2 -<br>Single Pulse Peak TJ = PDM x Z JC + TC<br>0.0001 2 HE | ETT ——..EET —-.ET —— : |<br>0.000001 0.00001 0.0001 0.001 0.01 0.1 1<br>PULSE TIME (sec)<br>Figure 25. IGBT Transient Thermal Impedance<br>1<br>=] SS FS<br>2 50% Duty Cycle a R JC  = 0.78 a R i  ( ° C/W) C i  (J/W)<br>a eer I<br>0.017265 0.000058<br>a ee anil I<br>20% 0.023397 0.000427<br>0.025095 0.001260<br>PSEC eer 0.073345 0.001363<br>0.1 PL 10% ==oeaul| Junction R 1 R 2 R n Case 0.093146 0.003395 |<br>==. 5% 2% |ee| fT ertee eee 0.0437050.060153 0.127694 0.0228810.052571 0.078312 |HU|<br>Peer et 0.246682 0.128193 r<br>ee ee C 1 C 2 C n 0.070293 1.422617 l<br>a eee ee Duty Factor = t 1 /t 2 !<br>Single Pulse Peak TJ = PDM x Z JC + TC<br>0.01 EPA EE TEE |<br>0.000001 0.00001 0.0001 0.001 0.01 0.1 1<br>PULSE TIME (sec)<br>Ipk (A)<br>C/W)<br>°<br>R(t), SQUARE−WAVE PEAK (<br>C/W)<br>°<br>R(t), SQUARE−WAVE PEAK (<br>**----- End of picture text -----**<br>


**Figure 26. Diode Transient Thermal Impedance** 

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**NGTB25N120FL3WG** 

**Figure 27.  Test Circuit for Switching Characteristics** 

**Figure 28. Definition of Turn On Waveform** 

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**NGTB25N120FL3WG** 

**Figure 29. Definition of Turn Off Waveform** 

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MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** 

## **TO−247** CASE 340AM ISSUE C 

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DATE 07 SEP 2021<br>**----- End of picture text -----**<br>


**GENERIC MARKING DIAGRAMS*** XXXXXXXXX AYWWG XXXXXXXXX XXXXXXXXX AYWWG XXXX = Specific Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package 

## **DOCUMENT NUMBER: 98AON77284F** 

## **DESCRIPTION: TO−247** 

*This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ ”, may or may not be present. Some products may not follow the Generic Marking. Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red. 

## **PAGE 1 OF 1** 

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**onsemi** , , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “ **onsemi** ” or its affiliates and/or subsidiaries in the United States and/or other countries. **onsemi** owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of **onsemi** ’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. **onsemi** reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and **onsemi** makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using **onsemi** products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by **onsemi** . “Typical” parameters which may be provided in **onsemi** data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. **onsemi** does not convey any license under any of its intellectual property rights nor the rights of others. **onsemi** products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use **onsemi** products for any such unintended or unauthorized application, Buyer shall indemnify and hold **onsemi** and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that **onsemi** was negligent regarding the design or manufacture of the part. **onsemi** is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 

## **PUBLICATION ORDERING INFORMATION** 

**LITERATURE FULFILLMENT** : **TECHNICAL SUPPORT Email Requests to:** orderlit@onsemi.com **North American Technical Support: Europe, Middle East and Africa Technical Support:** Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 00421 33 790 2910 **onsemi Website:** www.onsemi.com Phone: 011 421 33 790 2910 For additional information, please contact your local Sales Representative 

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## Links

- [View this product on Novapart](https://novapart.co/products/NGTB25N120FL3WG/igbt-100-a-17-v-349-w-12-kv-to-247-3-pins)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/on-semiconductor/ngtb25n120fl3wg/igbt-single-1-2kv-100a-to-247/dp/2627927)
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