# IGBT, Field Stop II, 50 A, 2 V, 385 W, 1.2 kV, TO-247, 3 Pins ![Product image](https://novapart.co/image/farnell:3368696/) **URL**: https://novapart.co/products/NGTB25N120FL2WG/igbt-field-stop-ii-50-a-2-v-385-w-12-kv-to-247-3 **SKU**: NGTB25N120FL2WG **Manufacturer**: ONSEMI **Category**: Semiconductors - Discretes || IGBTs || Single IGBTs **Price**: €3.2500 **Stock**: 10+ **Lead Time**: 232 days (indicative) ## Specifications | Parameter | Value | |---|---| | Svhc | No SVHC (25-Jun-2025) | | No. Of Pins | 3Pins | | Product Range | - | | Power Dissipation | 385W | | Transistor Mounting | Through Hole | | Transistor Case Style | TO-247 | | Operating Temperature Max | 175°C | | Continuous Collector Current | 50A | | Collector Emitter Voltage Max | 1.2kV | | Collector Emitter Saturation Voltage | 2V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:3368696/) NGTB25N120FL2WG ## IGBT - Field Stop II This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft and fast co−packaged free wheeling diode with a low forward voltage. ## **www.onsemi.com** ## **Features** - Extremely Efficient Trench with Field Stop Technology - TJmax = 175°C - Soft Fast Reverse Recovery Diode **25 A, 1200 V VCEsat = 2.0 V Eoff = 0.60 mJ** - Optimized for High Speed Switching **==> picture [147 x 179] intentionally omitted <==** **----- Start of picture text -----**
C
G
E
on
G TO−247
OB C
E CASE 340AL
**----- End of picture text -----**
- 10 s Short Circuit Capability - These are Pb−Free Devices ## **Typical Applications** - Solar Inverter - Uninterruptible Power Inverter Supplies (UPS) - Welding ## **ABSOLUTE MAXIMUM RATINGS** |**Rating**
~~a~~|**Symbol**
~~es~~
~~Gs~~|**Value**
~~Gs~~
~~ee~~|**Unit**| |---|---|---|---| |Collector−emitter voltage
~~a~~
~~es~~
~~pt]~~|VCES
~~es~~
~~es~~
~~Gs~~
~~pt]~~|1200
~~Gs~~
~~es~~
~~ee~~
~~pt]~~|V
~~es~~
~~pt]~~| |Collector current
@ TC= 25°C
@ TC= 100°C
~~pt]~~|IC
~~Gs~~
~~pt]~~|50
25
~~ee~~
~~pt]~~|A
~~pt]~~| |Pulsed collector current, Tpulse
limited by TJmax
~~pt]~~
~~i~~|ICM
~~pt]~~
~~i~~|100
~~pt]~~
~~i~~|A
~~pt]~~
~~i~~| |Diode forward current
@ TC= 25°C
@ TC= 100°C
~~TEESE~~|IF
~~TEESE~~|50
25
~~TEESE~~|A
~~TEESE~~| |Diode pulsed current, Tpulselimited
by TJmax
~~ee~~
~~vee~~|IFM
~~ee~~
~~ee~~|100
~~ee~~
~~ee~~|A
~~ee~~| |Gate−emitter voltage
Transient gate−emitter voltage
(Tpulse= 5 s, D < 0.10)
~~vee~~
~~a~~|VGE
~~ee~~
~~a e~~|20
±30
~~ee~~
~~e~~|V
~~e~~| |Power Dissipation
@ TC= 25°C
@ TC= 100°C
~~vee ~~
~~a~~
~~ee~~|PD
~~ee~~
~~a e~~|385
192
~~ee~~
~~e~~|W
~~e~~| |Short Circuit Withstand Time
VGE= 15 V, VCE= 500 V, TJ ≤150°C
~~ee~~|TSC|10|s| |Operating junction temperature
range
~~ee~~
~~ee~~|TJ
~~ee~~
~~Gs~~|−55 to +175
~~ee~~
~~ee~~|°C
~~ee~~| |Storage temperature range
~~ee~~|Tstg
~~ee~~
~~Gs~~|−55 to +175
~~ee~~
~~ee~~|°C
~~ee~~| |Lead temperature for soldering, 1/8”
from case for 5 seconds
~~ee~~|TSLD
~~Gs~~
~~ee~~|260
~~ee~~
~~ee~~|°C
~~ee~~| **==> picture [90 x 8] intentionally omitted <==** **----- Start of picture text -----**
MARKING DIAGRAM
**----- End of picture text -----**
**==> picture [136 x 133] intentionally omitted <==** **----- Start of picture text -----**
25N120FL2
AYWWG
e
UY
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
**----- End of picture text -----**
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ## **ORDERING INFORMATION** |**Device**|**Package**|**Shipping**| |---|---|---| |NGTB25N120FL2WG|TO−247
(Pb−Free)|30 Units / Rail| Publication Order Number: **NGTB25N120FL2W/D** **1** © Semiconductor Components Industries, LLC, 2016 **November, 2017 − Rev. 4** **NGTB25N120FL2WG** ## **THERMAL CHARACTERISTICS** |**THERMAL CHARACTERISTICS**|||| |---|---|---|---| |**Rating**|**Symbol**|**Value**|**Unit**| |Thermal resistance junction−to−case, for IGBT|R�JC|0.39|°C/W| |Thermal resistance junction−to−case, for Diode|R�JC|0.63|°C/W| |Thermal resistance junction−to−ambient|R�JA|40|°C/W| |**ELECTRICAL CHARACTERISTICS**(TJ= 25°C unless otherwise specified)|||| |**THERMAL CHARACTERISTICS**|**THERMAL CHARACTERISTICS**|||||| |---|---|---|---|---|---|---| |**Rating**||**Symbol**|**Value**|||**Unit**| |Thermal resistance junction−to−case, for IGBT||R�JC|0.39|||°C/W| |Thermal resistance junction−to−case, for Diode||R�JC|0.63|||°C/W| |Thermal resistance junction−to−ambient||R�JA|40|||°C/W| |**ELECTRICAL CHARACTERISTICS**(TJ= 25°C unless otherwise specified)||||||| |**Parameter**|**Test Conditions**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**| |**STATIC CHARACTERISTIC**||||||| |Collector−emitter breakdown voltage,
gate−emitter short−circuited|VGE=0 V, IC= 500�A|V(BR)CES|1200|−|−|V| |Collector−emitter saturation voltage|VGE= 15 V, IC= 25 A
VGE= 15 V, IC= 25 A, TJ= 175°C|VCEsat|−
−|2.00
2.40|2.40
−|V| |Gate−emitter threshold voltage|VGE= VCE, IC= 400�A|VGE(th)|4.5|5.5|6.5|V| |Collector−emitter cut−off current, gate−
emitter short−circuited|VGE= 0 V, VCE= 1200 V
VGE= 0 V, VCE= 1200 V, TJ =175°C|ICES|−
−|−
2.5|0.4
−|mA| |Gate leakage current, collector−emitter
short−circuited|VGE= 20 V , VCE= 0 V|IGES|−|−|200|nA| |||||||| |Input capacitance|VCE= 20 V, VGE= 0 V, f = 1 MHz|Cies|−|4420|−|pF| |Output capacitance||Coes|−|151|−|| |Reverse transfer capacitance||Cres|−|81|−|| |Gate charge total|VCE= 600 V, IC= 25 A, VGE= 15 V|Qg|−|178|−|nC| |Gate to emitter charge||Qge|−|39|−|| |Gate to collector charge||Qgc|−|83|−|| |**SWITCHING CHARACTERISTIC, INDUCTIVE LOAD**||||||| |Turn−on delay time|TJ= 25°C
VCC= 600 V, IC= 25 A
Rg= 10�
VGE= 0 V/ 15V|td(on)|−|87|−|ns| |Rise time||tr|−|28|−|| |Turn−off delay time||td(off)|−|179|−|| |Fall time||tf|−|136|−|| |Turn−on switching loss||Eon|−|1.95|−|mJ| |Turn−off switching loss||Eoff|−|0.60|−|| |Total switching loss||Ets|−|2.55|−|| |Turn−on delay time|TJ= 150°C
VCC= 600 V, IC= 25 A
Rg= 10�
VGE= 0 V/ 15V|td(on)|−|84|−|ns| |Rise time||tr|−|29|−|| |Turn−off delay time||td(off)|−|185|−|| |Fall time||tf|−|245|−|| |Turn−on switching loss||Eon|−|2.39|−|mJ| |Turn−off switching loss||Eoff|−|1.26|−|| |Total switching loss||Ets|−|3.65|−|| |**DIODE CHARACTERISTIC**||||||| |Forward voltage|VGE= 0 V, IF= 25 A
VGE= 0 V, IF= 50 A, TJ= 175°C|VF|−
−|2.10
2.30|2.60
−|V| |Reverse recovery time|TJ= 25°C
IF= 25 A, VR= 400 V
diF/dt = 200 A/�s|trr|−|154|−|ns| |Reverse recovery charge||Qrr|−|1.3|−|�c| |Reverse recovery current||Irrm|−|15|−|A| Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. **www.onsemi.com** **2** **NGTB25N120FL2WG** ## **TYPICAL CHARACTERISTICS** **==> picture [490 x 593] intentionally omitted <==** **----- Start of picture text -----**
100 100
90 VGEto 20 V = 13 V T J = 25 ° C 90 TJ = 150 ° C
80 80 VGE = 13 V
to 20 V
70 70
11 V
60 60 11 V
50 50
10 V
40 10 V 40
30 30
9 V
20 9 V 20
8 V
10 7 V 8 V 10 7 V
0 0
0 1 2 3 4 5 6 7 8 0 1 2 3 4 5 6 7 8
VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 1. Output Characteristics Figure 2. Output Characteristics
100 45
90 VGto 20 VE = 13 V T J = −55 ° C 40
80
35
70
11 V 30
60
25
50
20
40
10 V
15
30 TJ = 150 ° C
20 9 V 10 TJ = 25 ° C
10 5
8 V
0 0
0 1 2 3 4 5 6 7 8 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15
VCE, COLLECTOR−EMITTER VOLTAGE (V) VGE, GATE−EMITTER VOLTAGE (V)
Figure 3. Output Characteristics Figure 4. Typical Transfer Characteristics
4.0 10,000
3.5 IC = 50 A C ies
3.0 1000
2.5 I C = 25 A
2.0 100 Coes
IC = 15 A
1.5 Cres
1.0 10
0.5 TJ = 25 ° C
0 1
−75 −50 −25 0 25 50 75 100 125 150 175 200 0 10 20 30 40 50 60 70 80 90 100
TJ, JUNCTION TEMPERATURE ( ° C) VCE, COLLECTOR−EMITTER VOLTAGE (V)
, COLLECTOR CURRENT (A) , COLLECTOR CURRENT (A)
IC IC
, COLLECTOR CURRENT (A) , COLLECTOR CURRENT (A)
IC IC
C, CAPACITANCE (pF)
, COLLECTOR−EMITTER VOLTAGE (V)
CE
V
**----- End of picture text -----**
**Figure 5. VCE(sat) vs. TJ** **Figure 6. Typical Capacitance** **www.onsemi.com** **3** **NGTB25N120FL2WG** ## **TYPICAL CHARACTERISTICS** **==> picture [239 x 592] intentionally omitted <==** **----- Start of picture text -----**
40
35
TJ = 25 ° C
30
TJ = 150 ° C
25
20
15
10
5
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
VF, FORWARD VOLTAGE (V)
Figure 7. Diode Forward Characteristics
3.0
VCE = 600 V
VGE = 15 V
2.5
IC = 25 A
2.0 Rg = 10 � Eon
1.5
Eoff
1.0
0.5
0
0 20 40 60 80 100 120 140 160
TJ, JUNCTION TEMPERATURE ( ° C)
Figure 9. Switching Loss vs. Temperature
5
Eon
V CE = 600 V
4 VTJ GE = 150= 15 V ° C
Rg = 10 �
3
Eoff
2
1
0
0 10 20 30 40 50 60
IC, COLLECTOR CURRENT (A)
, FORWARD CURRENT (A)
IF
SWITCHING LOSS (mJ)
SWITCHING LOSS (mJ)
**----- End of picture text -----**
**Figure 11. Switching Loss vs. IC** **==> picture [244 x 592] intentionally omitted <==** **----- Start of picture text -----**
16
14
12
10
8
6
4 VCE = 600 V
VGE = 25 V
2 I C = 25 A
0
0 50 100 150 200
QG, GATE CHARGE (nC)
Figure 8. Typical Gate Charge
1000
V CE = 600 V
VGE = 15 V
IC = 25 A
Rg = 10 � tf
td(off)
100 td(on)
tr
10
0 20 40 60 80 100 120 140 160
TJ, JUNCTION TEMPERATURE ( ° C)
Figure 10. Switching Time vs. Temperature
1000
VCE = 600 V
VGE = 15 V
TJ = 150 ° C
tf Rg = 10 �
t d(off)
100
t d(on)
tr
10
0 10 20 30 40 50 60
IC, COLLECTOR CURRENT (A)
, GATE−EMITTER VOLTAGE (V)
GE
V
SWITCHING TIME (ns)
SWITCHING TIME (ns)
**----- End of picture text -----**
**Figure 12. Switching Time vs. IC** **www.onsemi.com** **4** **NGTB25N120FL2WG** ## **TYPICAL CHARACTERISTICS** **==> picture [491 x 173] intentionally omitted <==** **----- Start of picture text -----**
6 1000
V CE = 600 V EON td(off)
5 VGE = 15 V
T J = 150 ° C t f
IC = 25 A
4
t d(on)
3 100 tr
2 EOFF V CE = 600 V
V GE = 15 V
1 TJ = 150 ° C
IC = 25 A
0 10
5 15 25 35 45 55 65 75 85 5 15 25 35 45 55 65 75 85
Rg, GATE RESISTOR ( � ) Rg, GATE RESISTOR ( � )
SWITCHING LOSS (mJ) SWITCHING TIME (ns)
**----- End of picture text -----**
**Figure 13. Switching Loss vs. Rg** **Figure 14. Switching Time vs. Rg** **==> picture [239 x 381] intentionally omitted <==** **----- Start of picture text -----**
4
VGE = 15 V
TJ = 150 ° C EON
3 I C = 25 A
Rg = 10 �
2
EOFF
1
0
350 400 450 500 550 600 650 700 750 800
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 15. Switching Loss vs. VCE
1000
100
10 dc operation
50 � s
Single Nonrepetitive 100 � s
1 Pulse TC = 25 ° C
Curves must be derated 1 ms
linearly with increase
in temperature
0.1
1 10 100 1000 10k
VCE, COLLECTOR−EMITTER VOLTAGE (V)
SWITCHING LOSS (mJ)
, COLLECTOR CURRENT (A)
IC
**----- End of picture text -----**
**Figure 17. Safe Operating Area** **==> picture [242 x 381] intentionally omitted <==** **----- Start of picture text -----**
1000
VGE = 15 V
TJ = 150 ° C
IC = 25 A
Rg = 10 � tf
td(off)
100
td(on)
tr
10
350 400 450 500 550 600 650 700 750 800
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 16. Switching Time vs. VCE
1000
100
10
VGE = 15 V, TC = 125 ° C
1
1 10 100 1000 10k
VCE, COLLECTOR−EMITTER VOLTAGE (V)
SWITCHING TIME (ns)
, COLLECTOR CURRENT (A)
IC
**----- End of picture text -----**
**Figure 18. Reverse Bias Safe Operating Area** **www.onsemi.com** **5** **NGTB25N120FL2WG** ## **TYPICAL CHARACTERISTICS** **==> picture [487 x 389] intentionally omitted <==** **----- Start of picture text -----**
1
50% Duty Cycle R � JC = 0.39
0.1 20%
10%
5% Junction R 1 R 2 R n Case R i ( ° C/W) C i (J/ ° C)
0.01 2% 0.0931 0.0034
0.0559 0.0179
0.1139 0.0278
0.1187 0.0842
C1 C2 Cn 0.0079 3.9912
0.001
0.0004 238.3112
Duty Factor = t1/t2
Single Pulse Peak T J = P DM x Z � JC + T C
0.0001
0.000001 0.00001 0.0001 0.001 0.01 0.1 1
ON−PULSE WIDTH (s)
Figure 19. IGBT Die Self−heating Square−wave Duty Cycle Transient Thermal Response
1
50% Duty Cycle R � JC = 0.635
20% Ri ( ° C/W) Ci (J/ ° C)
Junction R1 R2 Rn Case 0.011310 0.000088
0.1 0.014776 0.000677
10%
0.017184 0.001840
0.042148 0.002373
5%
0.078172 0.004045
C1 C2 Cn 0.047623 0.020998
2%
0.036547 0.086526
Duty Factor = t 1 /t 2 0.075548 0.132366
0.01 Single Pulse Peak TJ = PDM x Z � JC + TC 0.1752650.135917 00.735746.180428
0.000001 0.00001 0.0001 0.001 0.01 0.1 1
ON−PULSE WIDTH (s)
C/W)
°
SQUARE−WAVE PEAK R(t) (
C/W)
°
SQUARE−WAVE PEAK R(t) (
**----- End of picture text -----**
**Figure 20. Diode Die Self−heating Square−wave Duty Cycle Transient Thermal Response** **www.onsemi.com** **6** **NGTB25N120FL2WG** **==> picture [472 x 231] intentionally omitted <==** **----- Start of picture text -----**
120
100
PLUM EET (UTM FUT TUT
80 TC = 80 ° C
Tears
60
om IE TTA
TC = 110 ° C
40
20 oe CTATU
‘cecur USN
0
UUIIE ELLUIIN 1 LIDS
0.01 0.1 1 Freq (kHz) 10 100 1000
Figure 21. Collector Current vs. Switching Frequency
Ipk (A)
**----- End of picture text -----**
**Figure 22. Test Circuit for Switching Characteristics** **www.onsemi.com** **7** **NGTB25N120FL2WG** **Figure 23. Definition of Turn On Waveform** **www.onsemi.com** **8** **NGTB25N120FL2WG** **Figure 24. Definition of Turn Off Waveform** **www.onsemi.com** **9** **NGTB25N120FL2WG** ## **PACKAGE DIMENSIONS** **TO−247** CASE 340AL ISSUE C NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. - 3.4. SLOT REQUIRED, NOTCH MAY BE ROUNDED.DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH. **==> picture [478 x 197] intentionally omitted <==** **----- Start of picture text -----**
NOTE 4 A B SEATINGPLANE 0.635 [M] B A [M] 3.4. SLOT REQUIRED, NOTCH MAY BE ROUNDED.DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH.
E A P NOTE 6 MOLD FLASH SHALL NOT EXCEED 0.13 PER SIDE. THESE
DIMENSIONS ARE MEASURED AT THE OUTERMOST
E2/2 EXTREME OF THE PLASTIC BODY.
5. LEAD FINISH IS UNCONTROLLED IN THE REGION DEFINED BY
E2 Q S 6. L1.∅P SHALL HAVE A MAXIMUM DRAFT ANGLE OF 1.5° TO THE
NOTE 4 TOP OF THE PART WITH A MAXIMUM DIAMETER OF 3.91.
D 7. DIMENSION A1 TO BE MEASURED IN THE REGION DEFINED
NOTE 3 BY L1.
4
MILLIMETERS
1 2 3 DIM MIN MAX
fey
A 4.70 5.30
2XF L1 A1 2.20 2.60
b 1.00 1.40
b2 1.65 2.35
L NOTE 5 b4 2.60 3.40
c 0.40 0.80
D 20.80 21.34
E 15.50 16.25
E2 4.32 5.49
2X b2 c e 5.45 BSC
b4 A1 LF 19.802.655 20.80---
3X b NOTE 7 L1 3.81 4.32
1 e 0.25 [M] B A [M] QP 3.555.40 3.656.20
**----- End of picture text -----**
5. LEAD FINISH IS UNCONTROLLED IN THE REGION DEFINED BY |7.|DIMENSION A1 TO BE MEASURED IN THE REGION DEFINED|DIMENSION A1 TO BE MEASURED IN THE REGION DEFINED|DIMENSION A1 TO BE MEASURED IN THE REGION DEFINED|DIMENSION A1 TO BE MEASURED IN THE REGION DEFINED| |---|---|---|---|---| ||BY L1.|||| |||**MILLIMETERS**||| ||**DIM**|**MIN**|**MAX**|| ||**A**|4.70|5.30|| ||**A1**|2.20|2.60|| ||**b**|1.00|1.40|| ||**b2**|1.65|2.35|| ||**b4**|2.60|3.40|| ||**c**|0.40|0.80|| ||**D**|20.80|21.34|| ||**E**|15.50|16.25|| ||**E2**|4.32|5.49|| ||**e**|5.45 BSC|5.45 BSC|| ||**F**|2.655|---|| ||**LF**|19.802.655|20.80---|| ||**L1**|3.81|4.32|| ||**P**|3.555.40|3.656.20|| ||**QP**|5.40|6.20|| ||**S**|6.15 BSC|6.15 BSC|| ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. 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