# IGBT, 30 A, 1.5 V, 117 W, 600 V, TO-220, 3 Pins

![Product image](https://novapart.co/image/farnell:2216667/)

**URL**: https://novapart.co/products/NGTB15N60S1EG/igbt-30-a-15-v-117-w-600-to-220-3-pins
**SKU**: NGTB15N60S1EG
**Manufacturer**: ONSEMI
**Category**: Semiconductors - Discretes || IGBTs || Single IGBTs
**Price**: €1.1900
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 3Pins |
| Power Dissipation | 117W |
| Transistor Mounting | Through Hole |
| Transistor Case Style | TO-220 |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 30A |
| Collector Emitter Voltage Max | 600V |
| Collector Emitter Saturation Voltage | 1.5V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2216667/)

NGTB15N60S1EG 

## IGBT - Short-Circuit Rated 

This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Non−Punch Through (NPT) Trench construction, and provides superior performance in demanding switching applications. Offering both low on state voltage and minimal switching loss, the IGBT is well suited for motor drive control and other hard switching applications. Incorporated into the device is a rugged co−packaged reverse recovery diode with a low forward voltage. 

## **Features** 

- Low Saturation Voltage Resulting in Low Conduction Loss 

- Low Switching Loss in Higher Frequency Applications 

- Soft Fast Reverse Recovery Diode 

- 5 s Short Circuit Capability 

- Excellent Current versus Package Size Performance Density 

- This is a Pb−Free Device 

## **Typical Applications** 

- White Goods Appliance Motor Control 

- General Purpose Inverter 

- AC and DC Motor Control 

## **ABSOLUTE MAXIMUM RATINGS** 

|**Rating**|**Symbol**|**Value**|**Unit**|
|---|---|---|---|
|Collector−emitter voltage|VCES|650|V|
|Collector current<br>@ TC= 25°C<br>@ TC= 100°C<br>~~|~~|IC<br>~~|~~|30<br>15<br>~~|~~|A<br>~~|~~|
|Pulsed collector current, Tpulselimited by<br>TJmax<br>~~|~~<br>~~ee~~<br>~~|~~|ICM<br>~~|~~<br>~~ee~~<br>~~ee~~<br>~~|~~|120<br>~~|~~<br>~~ee~~<br>~~eee~~|A<br>~~|~~<br>~~ee~~<br>~~eee~~|
|Diode forward current<br>@ TC= 25°C<br>@ TC= 100°C<br>~~ee~~<br>~~|~~|IF<br>~~ee~~<br>~~ee ~~<br>~~|~~|30<br>15<br>~~ee~~<br> ~~eee~~|A<br>~~ee~~<br>~~eee~~|
|Diode pulsed current, Tpulselimited by<br>TJmax<br>~~|~~<br>~~ee~~|IFM<br>~~|~~<br>~~ee~~|120<br>~~ee~~|A<br>~~ee~~|
|Gate−emitter voltage<br>~~ee~~|VGE<br>~~ee~~|20<br>~~ee~~|V<br>~~ee~~|
|Power dissipation<br>@ TC= 25°C<br>@ TC= 100°C<br>~~ee~~<br>~~ee~~|PD<br>~~ee~~<br>~~ee~~<br>~~ee~~|117<br>47<br>~~ee~~<br>~~ee~~<br>~~eee~~|W<br>~~ee~~<br>~~ee~~<br>~~eee~~|
|Short circuit withstand time<br>VGE= 15 V, VCE= 400 V, TJ<br>+150°C<br>~~ee~~|tSC<br>~~ee~~<br>~~ee~~<br>~~ee~~|5<br>~~ee~~<br>~~eee~~<br>~~eee~~|s<br>~~ee~~<br>~~eee~~<br>~~eee~~|
|Operating junction temperature range<br>~~ee~~|TJ<br>~~ee ~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|−55 to<br>+150<br> ~~eee~~<br>~~ee~~<br>~~eee~~<br>~~ee~~|°C<br>~~eee~~<br>~~ee~~<br>~~eee~~<br>~~ee~~|
|Storage temperature range<br>~~ee~~|Tstg<br>~~ee ~~<br>~~ee~~<br>~~ee~~<br>~~ee ee~~|−55 to<br>+150<br> ~~eee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|°C<br>~~eee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|
|Lead temperature for soldering, 1/8” from<br>case for 5 seconds<br>~~ee~~|TSLD<br>~~ee ~~<br>~~ee~~<br>~~ee ee~~|260<br> ~~ee~~<br>~~ee~~<br>~~ee~~|°C<br>~~ee~~<br>~~ee~~<br>~~ee~~|



## **www.onsemi.com** 

**15 A, 650 V VCEsat = 1.5 V** 

**==> picture [119 x 205] intentionally omitted <==**

**----- Start of picture text -----**<br>
C<br>G<br>E<br>C<br>yi<br>TO−220<br>CASE 221A<br>G<br>C STYLE 9<br>E<br>**----- End of picture text -----**<br>


## **MARKING DIAGRAM** 

**==> picture [107 x 133] intentionally omitted <==**

**----- Start of picture text -----**<br>
15N60S1G<br>AYWW<br>_<br>WN<br>A = Assembly Location<br>Y = Year<br>WW = Work Week<br>G = Pb−Free Package<br>**----- End of picture text -----**<br>


## **ORDERING INFORMATION** 

|**Device**|**Package**|**Shipping**|
|---|---|---|
|NGTB15N60S1EG|TO−220<br>(Pb−Free)|50 Units / Rail|



Publication Order Number: **NGTB15N60S1E/D** 

**1** 

© Semiconductor Components Industries, LLC, 2015 **May, 2017 − Rev. 7** 

**NGTB15N60S1EG** 

## **THERMAL CHARACTERISTICS** 

|**THERMAL CHARACTERISTICS**||||
|---|---|---|---|
|**Rating**|**Symbol**|**Value**|**Unit**|
|Thermal resistance junction to case, for IGBT|R�JC|0.5|°C/W|
|Thermal resistance junction to case, for Diode|R�JC|2.3|°C/W|
|Thermal resistance junction to ambient|R�JA|60|°C/W|



## **ELECTRICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise specified) 

|**ELECTRICAL CHARACTERISTICS**(TJ=|25°C unless otherwise specified)||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Test Conditions**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|
|**STATIC CHARACTERISTIC**|||||||
|Collector−emitter breakdown voltage,<br>gate−emitter short−circuited|VGE= 0 V, IC= 500�A<br>VGE= 0 V, IC= 500�A, TJ= −40°C|V(BR)CES|650<br>−|720<br>660|−<br>−|V|
|Collector−emitter saturation voltage|VGE= 15 V , IC= 15 A<br>VGE= 15 V , IC= 15 A, TJ= 150°C|VCEsat|1.3<br>1.55|1.5<br>1.75|1.7<br>1.95|V|
|Gate−emitter threshold voltage|VGE=VCE, IC= 250�A|VGE(th)|4.5|5.5|6.5|V|
|Collector−emitter cut−off current, gate−emitter<br>short−circuited|VGE= 0 V, VCE= 650 V<br>VGE= 0 V, VCE= 650 V, TJ= 150°C|ICES|−<br>−|10<br>−|−<br>200|�A|
|Gate leakage current, collector−emitter<br>short−circuited|VGE= 20 V, VCE= 0 V|IGES|−|−|100|nA|
|Forward Transconductance|VCE= 20 V, IC= 15 A|gfs|−|10.1|−|S|
|**DYNAMIC CHARACTERISTIC**|||||||
|Input capacitance|VCE= 20 V, VGE= 0 V, f = 1 MHz|Cies|−|1950|−|pF|
|Output capacitance||Coes|−|70|−||
|Reverse transfer capacitance||Cres|−|42|−||
|Gate charge total|VCE= 480 V, IC= 15 A, VGE= 15 V|Qg|−|88|−|nC|
|Gate to emitter charge||Qge|−|16|−||
|Gate to collector charge||Qgc|−|42|−||
|**SWITCHING CHARACTERISTIC , INDUCTIVE LOAD**|||||||
|Turn−on delay time|TJ= 25°C<br>VCC= 400 V, IC= 15 A<br>Rg= 22�<br>VGE= 0 V / 15 V|td(on)|−|65|−|ns|
|Rise time||tr|−|28|−||
|Turn−off delay time||td(off)|−|170|−||
|Fall time||tf|−|140|−||
|Turn−on switching loss||Eon|−|0.550|−|mJ|
|Turn−off switching loss||Eoff|−|0.350|−||
|Total switching loss||Ets|−|0.900|−||
|Turn−on delay time|TJ=150°C<br>VCC= 400 V, IC = 15 A<br>Rg= 22�<br>VGE= 0 V / 15 V|td(on)|−|65|−|ns|
|Rise time||tr|−|28|−||
|Turn−off delay time||td(off)|−|180|−||
|Fall time||tf|−|260|−||
|Turn−on switching loss||Eon|−|0.650|−|mJ|
|Turn−off switching loss||Eoff|−|0.600|−||
|Total switching loss||Ets|−|1.250|−||
|**DIODE CHARACTERISTIC**|||||||
|Forward voltage|VGE= 0 V, IF= 15 A<br>VGE= 0 V, IF= 15 A, TJ= 150°C|VF|−<br>−|1.65<br>1.75|1.85<br>−|V|



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**2** 

## **NGTB15N60S1EG** 

## **ELECTRICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise specified) 

|**ELECTRICAL CHARACTERISTICS**(TJ=|25°C unless otherwise specified)||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Test Conditions**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|
|**DIODE CHARACTERISTIC**|||||||
|Reverse recovery time|TJ= 25°C<br>IF= 15 A, VR= 200 V<br>diF/dt = 200 A/µs|trr|−|270|−|ns|
|Reverse recovery charge||Qrr|−|350|−|nc|
|Reverse recovery current||Irrm|−|5|−|A|
|Reverse recovery time|TJ=125°C<br>IF= 15 A, VR= 200 V<br>diF/dt = 200 A/µs|trr|−|350|−|ns|
|Reverse recovery charge||Qrr|−|1000|−|nc|
|Reverse recovery current||Irrm|−|7.5|−|A|



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 

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**3** 

**NGTB15N60S1EG** 

## **TYPICAL CHARACTERISTICS** 

**==> picture [491 x 591] intentionally omitted <==**

**----- Start of picture text -----**<br>
60 60<br>TJ = 25 ° C VGE = 17 V to 13 V TJ = 150 ° C VGE = 17 V to 13 V<br>50 VGE = 11 V 50<br>VGE = 11 V<br>40 40<br>30 30<br>20 20 VGE = 9 V<br>VGE = 9 V<br>10 10<br>VGE = 7 V VGE = 7 V<br>0 0<br>0 1 2 3 4 5 6 7 8 0 1 2 3 4 5 6 7 8<br>VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V)<br>Figure 1. Output Characteristics Figure 2. Output Characteristics<br>70 60<br>TJ = −40 ° C TJ = 25 ° C<br>60 VGE = 17 V to 13 V<br>50<br>VGE = 11 V −40 ° C 150 ° C<br>50<br>40<br>40<br>30<br>30<br>20<br>20<br>VGE = 9 V<br>10<br>10<br>0 VGE = 7 V 0<br>0 1 2 3 4 5 6 7 8 0 2 4 6 8 10 12 14<br>VCE, COLLECTOR−EMITTER VOLTAGE (V) VGE, GATE−EMITTER VOLTAGE (V)<br>Figure 3. Output Characteristics Figure 4. Typical Transfer Characteristics<br>3.0 10,000<br>2.5 IC = 30 A Cies<br>2.0 1000<br>IC = 15 A<br>1.5 IC = 10 A<br>IC = 5 A<br>1.0 100<br>Coes<br>0.5<br>Cres<br>0 10<br>−50 −20 10 40 70 100 130 160 0 10 20 30 40 50 60 70 80 90 100<br>TJ, JUNCTION TEMPERATURE ( ° C) VCE, COLLECTOR−EMITTER VOLTAGE (V)<br>, COLLECTOR CURRENT (A) , COLLECTOR CURRENT (A)<br>IC IC<br>, COLLECTOR CURRENT (A) , COLLECTOR CURRENT (A)<br>IC IC<br>CAPACITANCE (pF)<br>, COLLECTOR−EMITTER VOLTAGE (V)<br>CE<br>V<br>**----- End of picture text -----**<br>


**Figure 5. VCE(sat) vs. TJ** 

**Figure 6. Typical Capacitance** 

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**NGTB15N60S1EG** 

## **TYPICAL CHARACTERISTICS** 

**==> picture [237 x 170] intentionally omitted <==**

**----- Start of picture text -----**<br>
35<br>TJ = 25 ° C<br>30<br>25 −40 ° C<br>20 150 ° C<br>15<br>10<br>5<br>0<br>0 0.5 1 1.5 2 2.5<br>VF, FORWARD VOLTAGE (V)<br>, FORWARD CURRENT (A)<br>IF<br>**----- End of picture text -----**<br>


**Figure 7. Diode Forward Characteristics** 

**==> picture [243 x 172] intentionally omitted <==**

**----- Start of picture text -----**<br>
20<br>15 V CES  = 480 V<br>10<br>5<br>0<br>0 10 20 30 40 50 60 70 80 90 100<br>QG, GATE CHARGE (nC)<br>, GATE−EMITTER VOLTAGE (V)<br>GE<br>V<br>**----- End of picture text -----**<br>


**Figure 8. Typical Gate Charge** 

**==> picture [492 x 383] intentionally omitted <==**

**----- Start of picture text -----**<br>
0.7 1000<br>0.6 Eon tf<br>0.5 td(off)<br>100<br>Eoff<br>0.4 td(on)<br>0.3 tr<br>10<br>0.2 V CE  = 400 V VCE = 400 V<br>VGE = 15 V VGE = 15 V<br>0.1 IC = 15 A IC = 15 A<br>Rg = 22  � Rg = 22  �<br>0 1<br>0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160<br>TJ, JUNCTION TEMPERATURE ( ° C) TJ, JUNCTION TEMPERATURE ( ° C)<br>Figure 9. Switching Loss vs. Temperature Figure 10. Switching Time vs. Temperature<br>1.4 1000<br>1.2 VVCEGE = 400 V = 15 V Eon tf<br>TJ = 150 ° C<br>1.0 Rg = 22  � td(off)<br>100<br>Eoff<br>0.8 td(on)<br>0.6 tr<br>10<br>0.4 VCE = 400 V<br>VGE = 15 V<br>0.2 TJ = 150 ° C<br>Rg = 22  �<br>0 1<br>8 12 16 20 24 28 32 8 12 16 20 24 28 32<br>IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)<br>SWITCHING LOSS (mJ) SWITCHING TIME (ns)<br>SWITCHING LOSS (mJ) SWITCHING TIME (ns)<br>**----- End of picture text -----**<br>


**Figure 11. Switching Loss vs. IC** 

**Figure 12. Switching Time vs. IC** 

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**NGTB15N60S1EG** 

## **TYPICAL CHARACTERISTICS** 

**==> picture [243 x 603] intentionally omitted <==**

**----- Start of picture text -----**<br>
1.2<br>Eon<br>VCE = 400 V<br>VGE = 15 V<br>0.9 IC = 15 A<br>TJ = 150 ° C<br>Eoff<br>0.6<br>0.3<br>0<br>5 15 25 35 45 55 65 75 85<br>Rg, GATE RESISTOR ( � )<br>Figure 13. Switching Time vs. Rg<br>1.2<br>V GE = 15 V<br>IC = 15 A Eon<br>0.9 Rg = 22  �<br>TJ = 150 ° C<br>Eoff<br>0.6<br>0.3<br>0<br>175 225 275 325 375 425 475 525 575<br>VCE, COLLECTOR−EMITTER VOLTAGE (V)<br>Figure 15. Switching Loss vs. VCE<br>1000<br>1 ms 100  � s<br>100<br>50  � s<br>10<br>dc operation<br>1<br>Single Nonrepetitive<br>Pulse TC = 25 ° C<br>0.1 Curves must be derated<br>linearly with increase<br>in temperature<br>0.01<br>1 10 100 1000<br>VCE, COLLECTOR−EMITTER VOLTAGE (V)<br>SWITCHING LOSS (mJ)<br>SWITCHING LOSS (mJ)<br>, COLLECTOR CURRENT (A)<br>IC<br>**----- End of picture text -----**<br>


**==> picture [297 x 173] intentionally omitted <==**

**----- Start of picture text -----**<br>
1000<br>Eon<br>tf<br>td(off)<br>100 td(on)<br>Eoff<br>tr<br>10 VCE = 400 V<br>VGE = 15 V<br>IC = 15 A<br>TJ = 150 ° C<br>1<br>75 85 5 15 25 35 45 55 65 75 85<br>Rg, GATE RESISTOR ( � )<br>SWITCHING TIME (ns)<br>**----- End of picture text -----**<br>


**Figure 14. Switching Time vs. Rg** 

**==> picture [240 x 172] intentionally omitted <==**

**----- Start of picture text -----**<br>
1000<br>tf<br>td_off<br>100<br>td_on<br>tr<br>10<br>VGE = 15 V<br>IC = 15 A<br>Rg = 22  �<br>TJ = 150 ° C<br>1<br>175 225 275 325 375 425 475 525 575<br>VCE, COLLECTOR−EMITTER VOLTAGE (V)<br>SWITCHING TIME (ns)<br>**----- End of picture text -----**<br>


**Figure 16. Switching Time vs. VCE** 

**==> picture [241 x 172] intentionally omitted <==**

**----- Start of picture text -----**<br>
1000<br>100<br>10<br>1<br>0.1<br>VGE = 15 V, TC = 125 ° C<br>0.01<br>1 10 100 1000<br>VCE, COLLECTOR−EMITTER VOLTAGE (V)<br>, COLLECTOR CURRENT (A)<br>IC<br>**----- End of picture text -----**<br>


**Figure 17. Safe Operating Area** 

**Figure 18. Reverse Bias Safe Operating Area** 

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**6** 

**NGTB15N60S1EG** 

## **TYPICAL CHARACTERISTICS** 

**==> picture [491 x 378] intentionally omitted <==**

**----- Start of picture text -----**<br>
10<br>Sees eee nse eo 0 ee | | le a |<br>Fee Pi tT R JC = 1.06 ETI TTTh<br>1<br>50% Duty Cycle see anata rr Ri ( ° C/W) i [ (sec)]<br>20% 0.1 7.1E−5<br>SS 10% ene Junction R1 R2 Rn Case -—— 0.05010 1.0E−4 tt<br>0.1 0.15051 0.002<br>5% 0.33992 0.003<br>2% Ci =  i/Ri 0.10550 0.00999<br>ECE th |__| 0.20020 0.03 tHe<br>pA ee ee<br>0.01 1% C1 C2 Cn 0.11423 0.1<br>cee 072 oe |||<br>=>Ee Single Pulse gaan oo22 = 22s == === —— — = -anaes Duty Factor = t1/t2 Ft<br>0.001 Aa| Tit TT ee ee Peak TJ = PDM x Z JC + TC all a<br>0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000<br>PULSE TIME (sec)<br>Figure 19. IGBT Transient Thermal Impedance<br>10<br>A A OO<br>50% Duty Cycle R JC = 3.76<br>1 er 20% EE Ri ( ° C/W) i [ (sec)]<br>10%<br>0.01895 1.0E−7<br>5%<br>pee oe ce as | Duty Factor = t 1 /t 2 —- |__| 0.04097 1.0E−6 tl<br>0.1 S 2% e 1% eea Peak TJ = PDM x Z JC + T LE C -——} 0.12956 0.201990.1 1.0E 1.0E−47.1E − − 5 5 iti<br>Single Pulse Junction R1 R2 Rn Case 1.62730 0.002<br>Lt Tet TT ee 0.57301 0.003 HH<br>0.01 SSE Ci = i/Ri —— 0.45453 0.00498  i<br>0.40199 0.03<br>eco to C 1 C 2 C n a 0.21558 0.1 ii<br>0.001 a Hill<br>0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000<br>PULSE TIME (sec)<br>)JC<br>THERMAL RESPONSE (Z<br>)JC<br>THERMAL RESPONSE (Z<br>**----- End of picture text -----**<br>


**Figure 20. Diode Transient Thermal Impedance** 

**Figure 21.  Test Circuit for Switching Characteristics** 

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**7** 

**NGTB15N60S1EG** 

**Figure 22. Definition of Turn On Waveform** 

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**NGTB15N60S1EG** 

**Figure 23. Definition of Turn Off Waveform** 

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**NGTB15N60S1EG** 

## **PACKAGE DIMENSIONS** 

## **TO−220** CASE 221A−09 ISSUE AH 

NOTES: 

1. DIMENSIONING AND TOLERANCING PER ANSI 

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**----- Start of picture text -----**<br>
SEATING<br>−T− PLANE<br>B F C<br>T S<br>4<br>Q we A oF<br>1 2 3 U<br>H<br>K<br>Z<br>L R<br>V J<br>G<br>D<br>N<br>**----- End of picture text -----**<br>


|**DIM**<br>~~ee~~|**INCHES**<br>~~ee~~|**INCHES**<br>~~ee~~|**MILLIMETERS**<br>~~ee~~|**MILLIMETERS**<br>~~ee~~|
|---|---|---|---|---|
||**MIN**<br>**INCHES**<br>~~ee~~|**MAX**<br>**INCHES**<br>~~ee~~|**MIN**<br>**MILLIMETERS**<br>~~ee~~|**MAX**<br>**MILLIMETERS**<br>~~ee~~|
|**DIM**<br>**A**<br>~~ee~~|**MIN**<br>0.570<br>~~ee~~|**MAX**<br>0.620<br>~~ee~~|**MIN**<br>14.48<br>~~ee~~|**MAX**<br>15.75<br>~~ee~~|
|**B**<br>~~ee~~|0.380<br>~~ee~~|0.415<br>~~ee~~|9.66<br>~~ee~~|10.53<br>~~ee~~|
|**B**<br>**C**|0.380<br>0.160|0.415<br>0.190|9.66<br>4.07|10.53<br>4.83|
|**D**|0.025|0.038|0.64|0.96|
|**F**|0.142|0.161|3.61|4.09|
|**G**|0.095|0.105|2.42|2.66|
|**H**|0.110|0.161|2.80|4.10|
|**J**|0.014|0.024|0.36|0.61|
|**K**|0.500|0.562|12.70|14.27|
|**L**|0.045|0.060|1.15|1.52|
|**N**|0.190|0.210|4.83|5.33|
|**Q**|0.100|0.120|2.54|3.04|
|**Q**<br>**R**|0.100<br>0.080|0.120<br>0.110|2.54<br>2.04|3.04<br>2.79|
|**S**|0.045|0.055|1.15|1.39|
|**S**<br>**T**|0.045<br>0.235|0.055<br>0.255|1.15<br>5.97|1.39<br>6.47|
|**U**|0.000|0.050|0.00|1.27|
|**V**|0.045|---|1.15|---|
|**Z**|---|0.080|---|2.04|



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**Europe, Middle East and Africa Technical Support: Order Literature** : http://www.onsemi.com/orderlit Phone: 421 33 790 2910 **Japan Customer Focus Center** For additional information, please contact your local Phone: 81−3−5817−1050 Sales Representative 

**www.onsemi.com** 

**NGTB15N60S1E/D** 

**10** 



## Links

- [View this product on Novapart](https://novapart.co/products/NGTB15N60S1EG/igbt-30-a-15-v-117-w-600-to-220-3-pins)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/en-ES/onsemi/ngtb15n60s1eg/igbt-600v-15a-w-diode-to-220-3/dp/2216667)
---

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