# IGBT, 20 A, 1.5 V, 40 W, 600 V, SC-67, 3 Pins

![Product image](https://novapart.co/image/farnell:2845348/)

**URL**: https://novapart.co/products/NGTB10N60FG/igbt-20-a-15-v-40-w-600-sc-67-3-pins
**SKU**: NGTB10N60FG
**Manufacturer**: ONSEMI
**Category**: Semiconductors - Discretes || IGBTs || Single IGBTs
**Price**: €0.4760
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 3Pins |
| Power Dissipation | 40W |
| Transistor Mounting | Through Hole |
| Transistor Case Style | SC-67 |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 20A |
| Collector Emitter Voltage Max | 600V |
| Collector Emitter Saturation Voltage | 1.5V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2845348/)

Ordering number : ENA2283A 

## **NGTB10N60FG** 

## **N-Channel IGBT 600V, 10A, VCE(sat);1.5V, TO-220F-3FS** 

http://onsemi.com 

## **Features** 

- IGBT VCE (sat)=1.5V typ. (IC=10A, VGE=15V) 

- IGBT IC=20A (Tc=25°C) 

- Adaption of full isolation type package 

   - Diode VF=1.3V typ.(IF=10A) 

   - Diode trr=70ns typ. 

   - Enhansment type 

- 5μs short circuit capability 

## **Applications** 

- Power factor correction of white goods appliance 

- General purpose inverter 

## **TO-220F-3FS** 

## **Specifications** 

**Absolute Maximum Ratings** at Ta = 25°C, Unless otherwise specified 

|Parameter|Symbol|Conditions|Conditions|Value|Unit|
|---|---|---|---|---|---|
|Collector to Emitter Voltage|VCES|||600|V|
|Gate to Emitter Voltage|VGES|||±20|V|
|Collector Current (DC)|IC*1|Limited by Tjmax|@ Tc=25°C *2|20|A|
||||@ Tc=100°C *2|10|A|
|Collector Current (Pulse)|ICP|Pulse width Limited by Tjmax||72|A|
|Diode Average Output Current|IO|||10|A|
|Allowable Power Dissipation|PD|Tc=25°C (Our ideal heat dissipation condition) *2||40|W|
|Junction Temperature|Tj|||150|°C|
|Storage Temperature|Tstg|||- 55 to +150|°C|



Note : *1 Collector Current is calculated from the following formula. 

Tjmax - Tc 

IC(Tc)= 

Rth(j-c)×VCE(sat) (IC(Tc)) 

- *2 Our condition is radiation from backside. 

The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminium. 

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ~~OO~~ 

**Electrical Characteristics** at Ta = 25°C, Unless otherwise specified 

|Parameter<br>~~re~~|Symbol<br>~~re~~<br>~~a~~|Conditions<br>~~re~~<br>~~er~~<br>~~a~~|Conditions<br>~~re~~<br>~~er~~<br>~~a~~|Value<br>~~re~~<br>~~er~~|Value<br>~~re~~<br>~~er~~|Value<br>~~re~~<br>~~er~~|Unit<br>~~re~~|
|---|---|---|---|---|---|---|---|
|||||min<br>~~re~~<br>~~er~~|typ<br>~~re~~<br>~~er~~|max<br>~~re~~||
|Collector  to Emitter Breakdown Voltage<br>~~re~~|V(BR)CES<br>~~re~~<br>~~a~~|IC=500μA, VGE=0V<br>~~re~~<br>~~er~~<br>~~a~~||600<br>~~re~~<br>~~er~~|~~re~~<br>~~er~~|~~re~~|V<br>~~re~~|
|Collector to Emitter Cut off Current<br>~~es~~|ICES<br>~~es~~<br>~~a~~|VCE=600V, VGE=0V<br>~~es~~<br>~~a~~|Tc=25°C<br>~~er~~<br>~~es~~|~~er~~<br>~~es~~|~~er~~<br>~~es~~|10<br>~~es~~|μA<br>~~es~~|
||||Tc=125°C<br>~~er~~<br>~~es~~|~~er~~<br>~~es~~|~~er~~<br>~~es~~|1<br>~~es~~|mA<br>~~es~~|
|Gate to Emitter Leakage Current<br>~~es~~|IGES<br>~~es~~<br>~~a~~|VGE=±20V, VCE =0V<br>~~es~~<br>~~a~~||~~es~~|~~es~~|±100<br>~~es~~|nA<br>~~es~~|
|Gate to Emitter Threshold Voltage|VGE(off)<br>~~a~~|VCE =20V, IC=250μA<br>~~a~~||4.5||6.5|V|
|Collector to Emitter Saturation Voltage|VCE(sat)|VGE=15V, IC=10A|Tc=25°C||1.5|1.7|V|
||||Tc=125°C||1.7||V|
|Diode Forward Voltage|VF|IF=10A|||1.3||V|
|Input Capacitance<br>~~i~~|Cies|VCE =20V,f=1MHz|||1440||pF|
|Output Capacitance<br>~~i~~|Coes||||60||pF|
|Reverse Transfer Capacitance<br>~~i~~|Cres||||30||pF|



## **ORDERING INFORMATION** 

See detailed ordering and shipping information on page 6 of this data sheet. 

Semiconductor Components Industries, LLC, 2014 **April, 2014** 

41814 TKIM TC-00003096/13014 TKIM  No.A2283-1/6 

**NGTB10N60FG** 

|||**NGTB10N60FG**|||||
|---|---|---|---|---|---|---|
|Continued frompreceding page.|||||||
|Parameter|Symbol|Conditions||Value||Unit|
||||min|typ|max||
|Turn-ON Delay Time|td(on)|VCC=300V,IC=10A<br>RG=30Ω,L=200μH<br>VGE=0V/15V<br>Vclamp=400V<br>See Fig.1, See Fig.2||40||ns|
|Rise Time|tr|||23||ns|
|Turn-ON Time|ton|||110||ns|
|Turn-OFF Delay Time|td(off)|||145||ns|
|Fall Time|tf|||90||ns|
|Turn-OFF Time|toff|||240||ns|
|Total Gate Charge|Qg|VCE =300V, VGE=15V, IC=10A||55||nC|
|Gate to Emitter Charge|Qge|||20||nC|
|Gate to Collector “Miller” Charge|Qgc|||10||nC|
|Diode Reverse Recovery Time|trr|IF=10A, di/dt=100A/μs, VCC=50V, See Fig.3||70||ns|



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 

## **Thermal Characteristics** at Ta = 25°C, Unless otherwise specified 

|Parameter|Symbol|Conditions|Value|Unit|
|---|---|---|---|---|
|Thermal Resistance IGBT (junction- Case)|Rth(j-c) (IGBT)|Tc=25°C (Our ideal heat dissipation condition)*2|3.09|°C /W|
|Thermal Resistance Diode (junction- Case)|Rth(j-c) (Diode)|Tc=25°C (Our ideal heat dissipation condition)*2|4|°C /W|
|Thermal Resistance (junction- ambient)|Rth(j-a)||59.5|°C /W|



## **Fig.1 Switching Time Test Circuit** 

**==> picture [107 x 115] intentionally omitted <==**

## **Fig.2 Timing Chart** 

**==> picture [245 x 149] intentionally omitted <==**

**----- Start of picture text -----**<br>
VGE<br>90%<br>10%<br>0<br>IC<br>90% 90%<br>VCE 10% 10% 10% 10%<br>0<br>tf tr<br>td(off) td(on)<br>toff ton<br>IT16383<br>**----- End of picture text -----**<br>


## **Fig.3 Reverse Recovery Time Test Circuit** 

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No.A2283-2/6 

**NGTB10N60FG** 

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No.A2283-3/6 

**NGTB10N60FG** 

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No.A2283-4/6 

**NGTB10N60FG** 

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No.A2283-5/6 

**NGTB10N60FG** 

## **Package Dimensions** 

## NGTB10N60FG 

**TO-220F-3FS** CASE 221AM ISSUE O 

Unit : mm 

1: Gate 2: Collector 3: Emitter 

**==> picture [87 x 134] intentionally omitted <==**

## **Ordering & Package Information                     Markin** g 

## **Electrical Connection** 

|Device|Package|Shipping<br>no|
|---|---|---|
|NGTB10N60FG|TO-220F-3FS<br>SC-67|50<br>pcs. / tube<br>Pb-|



2 GTB10N 60 LOTNo. 1 3 

ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitabilityof its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 

PS No.A2283-6/6 



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- [Supplier page](https://es.farnell.com/en-ES/on-semiconductor/ngtb10n60fg/igbt-single-600v-40a-sc-67/dp/2845348)
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